JP2014509080A - 半導体材料とストレージデバイス - Google Patents
半導体材料とストレージデバイス Download PDFInfo
- Publication number
- JP2014509080A JP2014509080A JP2013554636A JP2013554636A JP2014509080A JP 2014509080 A JP2014509080 A JP 2014509080A JP 2013554636 A JP2013554636 A JP 2013554636A JP 2013554636 A JP2013554636 A JP 2013554636A JP 2014509080 A JP2014509080 A JP 2014509080A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor material
- storage device
- ionic liquid
- insulating layer
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 239000000463 material Substances 0.000 title claims description 48
- 239000002608 ionic liquid Substances 0.000 claims abstract description 51
- 229920000642 polymer Polymers 0.000 claims abstract description 47
- 239000012212 insulator Substances 0.000 claims abstract description 36
- 239000008240 homogeneous mixture Substances 0.000 claims abstract description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 21
- 239000011368 organic material Substances 0.000 claims description 14
- 239000001856 Ethyl cellulose Substances 0.000 claims description 6
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 6
- 229920001249 ethyl cellulose Polymers 0.000 claims description 6
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 229920000098 polyolefin Polymers 0.000 claims description 6
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 4
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 4
- 239000011118 polyvinyl acetate Substances 0.000 claims description 4
- 239000000600 sorbitol Substances 0.000 claims description 4
- 235000010356 sorbitol Nutrition 0.000 claims description 4
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000001763 2-hydroxyethyl(trimethyl)azanium Substances 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 3
- 235000019743 Choline chloride Nutrition 0.000 claims description 3
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Polymers OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 3
- 229920001244 Poly(D,L-lactide) Polymers 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 229920002732 Polyanhydride Polymers 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 229920000954 Polyglycolide Polymers 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229920003086 cellulose ether Polymers 0.000 claims description 3
- SGMZJAMFUVOLNK-UHFFFAOYSA-M choline chloride Chemical compound [Cl-].C[N+](C)(C)CCO SGMZJAMFUVOLNK-UHFFFAOYSA-M 0.000 claims description 3
- 229960003178 choline chloride Drugs 0.000 claims description 3
- 229960005150 glycerol Drugs 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 3
- 239000005014 poly(hydroxyalkanoate) Substances 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920000768 polyamine Polymers 0.000 claims description 3
- 229920001610 polycaprolactone Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920000903 polyhydroxyalkanoate Polymers 0.000 claims description 3
- 229920000193 polymethacrylate Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 229920001289 polyvinyl ether Polymers 0.000 claims description 3
- 108090000765 processed proteins & peptides Proteins 0.000 claims description 3
- 229960002920 sorbitol Drugs 0.000 claims description 3
- -1 tetrafluoroborate Chemical compound 0.000 claims description 3
- 125000000391 vinyl group Polymers [H]C([*])=C([H])[H] 0.000 claims description 3
- 239000000811 xylitol Substances 0.000 claims description 3
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 3
- 229960002675 xylitol Drugs 0.000 claims description 3
- 235000010447 xylitol Nutrition 0.000 claims description 3
- 239000002657 fibrous material Substances 0.000 claims description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 2
- 238000005809 transesterification reaction Methods 0.000 claims description 2
- 241000195493 Cryptophyta Species 0.000 claims 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 229960001078 lithium Drugs 0.000 claims 1
- 229920001940 conductive polymer Polymers 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 150000001450 anions Chemical group 0.000 description 2
- 150000001768 cations Chemical group 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Semiconductor Memories (AREA)
- Organic Insulating Materials (AREA)
Abstract
【選択図】図1
Description
イオン液体は、水又は有機溶媒に絶縁体ポリマーを溶解し、混合物に1又は複数のイオン液体を添加することにより、絶縁体ポリマーに添加される。混合物は、1〜30分間、撹拌される。他の実施形態において、1又は複数のイオン液体は、1又は複数の溶融した絶縁体ポリマーに混合されてもよい。イオン液体は、溶融したポリマーに添加され、溶融物をフィルムに成形されてもよい。絶縁体ポリマーに添加されるイオン液体の割合は、半導体に要求される伝導率ニーズのレベルによって決まる。例えば、PVA/PAAと0.1グリセロールの混合物は高伝導率をもたらす。
Claims (20)
- 少なくとも1つの絶縁体ポリマーと、少なくとも1つのイオン液体とを含む半導体材料。
- 請求項1記載の半導体材料であって、
前記少なくとも1つのイオン液体は、1,3−ジアルキルイミダゾリウムテトラフルオロボレート、1,3−ジアルキルイミダゾリウムブロミド、1,3−ジアルキルイミダゾリウムビストリフルオロメタンスルホンイミド、1−アルキル−3−アラルキル−イミダゾリウム、グリセロール、キシリトール、ソルビトール、コリンクロリド、及び、藻類油のエステル交換反応中に形成されたグリセロールからなる群から選択されることを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つの絶縁体ポリマーは、ポリビニルアルコール、ポリアクリル酸、ポリエチレングリコール、エチルセルロース、ポリオレフィン、ポリエステル、非ペプチドポリアミン、ポリアミド、ポリカーボネート、ポリアルケン、ポリビニルエーテル、ポリグリコリド、セルロースエーテル、ポリハロゲン化ビニル、ポリヒドロキシアルカノエート、ポリ酸無水物、ポリスチレン、ポリアクリレート、ポリメタクリレート、ポリウレタン、エチルセルロース、ポリ(ε−カプロラクトン)、ポリ(d,l−乳酸)、ポリ(d,l−乳酸−コ−グリコール酸)、及びこれらの共重合体からなる群から選択されることを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つの絶縁体ポリマーと前記少なくとも1つのイオン液体の均質な混合物であることを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つの絶縁体ポリマーは少なくとも2つの絶縁体ポリマーを含むことを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つのイオン液体は少なくとも2つのイオン液体を含むことを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つの絶縁体ポリマー及び前記少なくとも1つのイオン液体はフィルムを形成することを特徴とする半導体材料。 - 請求項7記載の半導体材料であって、
前記フィルムは所定の厚さであることを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つの絶縁体ポリマー及び前記少なくとも1つのイオン液体とから形成された前記半導体材料が、制御された温度で制御可能な厚さに押し出されることを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つの絶縁体ポリマー及び前記少なくとも1つのイオン液体とから形成された前記半導体材料が、少なくとも1つの繊維状のものを形成することを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つのイオン液体は、最高で10重量%のイオン液体を含むことを特徴とする半導体材料。 - 請求項1記載の半導体材料であって、
前記少なくとも1つのイオン液体は、最高で5重量%のイオン液体を含むことを特徴とする半導体材料。 - 第1面上の第1絶縁層と、前記第1面と反対側にある第2面上の第2絶縁層との間に配置された導電層から形成される少なくとも1つのデバイスと、
前記第1絶縁層の外面に結合した半導体フィルム層とを備えるストレージデバイス。 - 請求項13記載のストレージデバイスであって、
前記半導体フィルム層は、ポリ酢酸ビニルで少なくとも部分的に形成されることを特徴とするストレージデバイス。 - 請求項13記載のストレージデバイスであって、
前記第1絶縁層は有機材料から形成されることを特徴とするストレージデバイス。 - 請求項15記載のストレージデバイスであって、
前記第1絶縁層は有機材料のポリメタクリル酸メチルから形成されることを特徴とするストレージデバイス。 - 請求項13記載のストレージデバイスであって、
前記第2絶縁層は有機材料から形成されることを特徴とするストレージデバイス。 - 請求項17記載のストレージデバイスであって、
前記第2絶縁層は有機材料のポリメタクリル酸メチルから形成されることを特徴とするストレージデバイス。 - 請求項13記載のストレージデバイスであって、
前記半導体フィルム層の外面に接続した第1電極と、前記第2絶縁層の外面に接続した第2電極とをさらに備えることを特徴とするストレージデバイス。 - 請求項19記載のストレージデバイスであって、
前記第1電極及び前記第2電極はアルミニウムから形成されることを特徴とするストレージデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161444704P | 2011-02-19 | 2011-02-19 | |
US61/444,704 | 2011-02-19 | ||
PCT/US2012/025654 WO2012112893A1 (en) | 2011-02-19 | 2012-02-17 | Semiconducting polymer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014509080A true JP2014509080A (ja) | 2014-04-10 |
JP6002158B2 JP6002158B2 (ja) | 2016-10-05 |
Family
ID=46652005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013554636A Active JP6002158B2 (ja) | 2011-02-19 | 2012-02-17 | 半導体材料とストレージデバイス |
Country Status (5)
Country | Link |
---|---|
US (2) | US8796673B2 (ja) |
EP (1) | EP2676303A4 (ja) |
JP (1) | JP6002158B2 (ja) |
CN (1) | CN103380503B (ja) |
WO (1) | WO2012112893A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102964524B (zh) * | 2012-11-28 | 2015-05-13 | 东华大学 | 以离子液体为溶剂双螺杆挤出原位接枝改性纤维素的方法 |
WO2017072650A1 (en) * | 2015-10-28 | 2017-05-04 | Sabic Global Technologies B.V. | Ion dipoles containing polymer compositions |
CN105482327B (zh) * | 2015-12-29 | 2018-02-27 | 太原理工大学 | (1‑乙烯基‑3‑乙基咪唑硼酸盐)聚离子液体/聚乙烯醇聚合物复合材料及其制备方法 |
CN105633283A (zh) * | 2016-03-14 | 2016-06-01 | 深圳大学 | 一种透明、柔性的光电传感器及其制备方法 |
US11545614B2 (en) * | 2018-07-03 | 2023-01-03 | Sabic Global Technologies, B.V. | Ionic polymer compositions |
CN109513039B (zh) * | 2019-01-08 | 2021-05-14 | 大连工业大学 | 一种含咪唑溴盐的抗菌水凝胶敷料及其制备方法和应用 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004098199A (ja) * | 2002-09-06 | 2004-04-02 | Chemiprokasei Kaisha Ltd | 固体電解質、それを含む可撓性積層体およびそれよりなる全固体アクチュエータ |
JP2005209736A (ja) * | 2004-01-20 | 2005-08-04 | Japan Science & Technology Agency | 半導体素子とその製造方法 |
JP2005223967A (ja) * | 2004-02-03 | 2005-08-18 | Matsushita Electric Ind Co Ltd | 柔軟アクチュエータ |
JP2007329334A (ja) * | 2006-06-08 | 2007-12-20 | Univ Of Fukui | 高分子アクチュエータおよびその製造方法 |
JP2008251697A (ja) * | 2007-03-29 | 2008-10-16 | Tdk Corp | 高分子アクチュエータ |
JP2009049397A (ja) * | 2007-07-24 | 2009-03-05 | Sumitomo Chemical Co Ltd | 有機トランジスタ絶縁膜用組成物 |
JP2009049396A (ja) * | 2007-07-24 | 2009-03-05 | Sumitomo Chemical Co Ltd | 有機トランジスタ絶縁膜用組成物 |
JP2009205970A (ja) * | 2008-02-28 | 2009-09-10 | Japan Aviation Electronics Industry Ltd | 導電性組成物ならびにこれを用いて得られる導電膜および半導体 |
JP2010233429A (ja) * | 2009-03-30 | 2010-10-14 | Institute Of National Colleges Of Technology Japan | ポリウレタンエラストマー・アクチュエータ |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1007349B1 (en) * | 1995-11-22 | 2004-09-29 | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY | Patterned conducting polymer surfaces and process for preparing the same and devices containing the same |
US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
JP4289852B2 (ja) * | 2002-09-18 | 2009-07-01 | 大日本印刷株式会社 | エレクトロルミネッセント素子の製造方法 |
US7075105B2 (en) * | 2003-03-19 | 2006-07-11 | Masataka Kano | Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device |
JP4685631B2 (ja) * | 2003-07-31 | 2011-05-18 | 株式会社カネカ | コンデンサとその製造方法 |
NO321555B1 (no) * | 2004-03-26 | 2006-05-29 | Thin Film Electronics Asa | Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning |
US7554111B2 (en) * | 2004-05-20 | 2009-06-30 | The Regents Of The University Of California | Nanoparticle-polymer bistable devices |
US20060021647A1 (en) * | 2004-07-28 | 2006-02-02 | Gui John Y | Molecular photovoltaics, method of manufacture and articles derived therefrom |
US20060083694A1 (en) * | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
WO2006083326A2 (en) * | 2004-08-07 | 2006-08-10 | Cabot Corporation | Gas dispersion manufacture of nanoparticulates and nanoparticulate-containing products and processing thereof |
US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
EP1814713A4 (en) * | 2004-11-09 | 2017-07-26 | Board of Regents, The University of Texas System | The fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns |
US7438832B2 (en) * | 2005-03-29 | 2008-10-21 | Eastman Kodak Company | Ionic liquid and electronically conductive polymer mixtures |
FR2889620B1 (fr) * | 2005-08-02 | 2007-11-30 | Commissariat Energie Atomique | Polyoxometallates dans des dispositifs de memoire |
KR101224768B1 (ko) * | 2006-02-02 | 2013-01-21 | 삼성전자주식회사 | 유기 메모리 소자 및 그의 제조방법 |
GB2453907B (en) * | 2006-08-02 | 2011-11-02 | Ada Technologies Inc | High performance ultracapacitors with carbon nanomaterials and ionic liquids |
WO2008097300A2 (en) * | 2007-02-08 | 2008-08-14 | Regents Of The University Of Minnesota | Ion gels and electronic devices utilizing ion gels |
GB2449928A (en) | 2007-06-08 | 2008-12-10 | Seiko Epson Corp | Electrochemical thin-film transistor |
JP2011524908A (ja) * | 2008-06-19 | 2011-09-08 | スリーエム イノベイティブ プロパティズ カンパニー | 溶液処理可能な有機半導体 |
KR101295888B1 (ko) * | 2010-05-10 | 2013-08-12 | 한국전자통신연구원 | 저항형 메모리 장치 및 그 제조 방법 |
-
2012
- 2012-02-17 US US13/399,460 patent/US8796673B2/en active Active
- 2012-02-17 JP JP2013554636A patent/JP6002158B2/ja active Active
- 2012-02-17 WO PCT/US2012/025654 patent/WO2012112893A1/en active Application Filing
- 2012-02-17 CN CN201280009379.1A patent/CN103380503B/zh active Active
- 2012-02-17 EP EP12747815.4A patent/EP2676303A4/en not_active Withdrawn
-
2014
- 2014-07-11 US US14/328,942 patent/US20140319503A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004098199A (ja) * | 2002-09-06 | 2004-04-02 | Chemiprokasei Kaisha Ltd | 固体電解質、それを含む可撓性積層体およびそれよりなる全固体アクチュエータ |
JP2005209736A (ja) * | 2004-01-20 | 2005-08-04 | Japan Science & Technology Agency | 半導体素子とその製造方法 |
JP2005223967A (ja) * | 2004-02-03 | 2005-08-18 | Matsushita Electric Ind Co Ltd | 柔軟アクチュエータ |
JP2007329334A (ja) * | 2006-06-08 | 2007-12-20 | Univ Of Fukui | 高分子アクチュエータおよびその製造方法 |
JP2008251697A (ja) * | 2007-03-29 | 2008-10-16 | Tdk Corp | 高分子アクチュエータ |
JP2009049397A (ja) * | 2007-07-24 | 2009-03-05 | Sumitomo Chemical Co Ltd | 有機トランジスタ絶縁膜用組成物 |
JP2009049396A (ja) * | 2007-07-24 | 2009-03-05 | Sumitomo Chemical Co Ltd | 有機トランジスタ絶縁膜用組成物 |
JP2009205970A (ja) * | 2008-02-28 | 2009-09-10 | Japan Aviation Electronics Industry Ltd | 導電性組成物ならびにこれを用いて得られる導電膜および半導体 |
JP2010233429A (ja) * | 2009-03-30 | 2010-10-14 | Institute Of National Colleges Of Technology Japan | ポリウレタンエラストマー・アクチュエータ |
Also Published As
Publication number | Publication date |
---|---|
US20120211732A1 (en) | 2012-08-23 |
EP2676303A1 (en) | 2013-12-25 |
EP2676303A4 (en) | 2017-04-19 |
WO2012112893A1 (en) | 2012-08-23 |
US8796673B2 (en) | 2014-08-05 |
US20140319503A1 (en) | 2014-10-30 |
CN103380503B (zh) | 2017-07-28 |
CN103380503A (zh) | 2013-10-30 |
JP6002158B2 (ja) | 2016-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6002158B2 (ja) | 半導体材料とストレージデバイス | |
Gao et al. | Organic and hybrid resistive switching materials and devices | |
Li et al. | Research progress on applications of polyaniline (PANI) for electrochemical energy storage and conversion | |
Luo et al. | Healable transparent electronic devices | |
Tan et al. | Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials | |
Mohaisen et al. | Fabrication and characterization of polymer blend doped with metal carbide nanoparticles for humidity sensors | |
Liu et al. | MnO2/poly (3, 4-ethylenedioxythiophene) coaxial nanowires by one-step coelectrodeposition for electrochemical energy storage | |
Lee et al. | Direct observation of a carbon filament in water-resistant organic memory | |
Younis et al. | High-performance nanocomposite based memristor with controlled quantum dots as charge traps | |
Nagashima et al. | Intrinsic mechanisms of memristive switching | |
JP2013521595A5 (ja) | ||
JP2007531802A5 (ja) | ||
JP2011522725A5 (ja) | ||
US11944023B2 (en) | Non-volatile resistive random access memory and a manufacturing method | |
Shi et al. | Fully Solution‐Processed Transparent Nonvolatile and Volatile Multifunctional Memory Devices from Conductive Polymer and Graphene Oxide | |
JP2016540249A (ja) | 透過率可変フィルムおよびその製造方法 | |
Wang et al. | Emerging nonvolatile memories to go beyond scaling limits of conventional CMOS nanodevices | |
JP2013149973A (ja) | ポリマー/電解質の接点でスイッチングするコンダクタンスに基づくメモリデバイス | |
Zhou et al. | Embedding azobenzol-decorated tetraphenylethylene into the polymer matrix to implement a ternary memory device with high working temperature/humidity | |
Dennis et al. | A review of current trends on polyvinyl alcohol (PVA)-based solid polymer electrolytes | |
Wang et al. | Graphene resistive random memory—the promising memory device in next generation | |
Silori et al. | Morphological features of SiO2 nanofillers address poor stability issue in gel polymer electrolyte-based electrochromic devices | |
Thien et al. | The role of polymers in halide perovskite resistive switching devices | |
Alarifi et al. | Conducting polymer membranes and their applications | |
Lee et al. | Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140108 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140512 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150901 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151126 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160301 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160809 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160902 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6002158 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |