CN103380503A - 半导体聚合物 - Google Patents
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Abstract
公开了一种由绝缘聚合物和离子液体形成的半导体聚合物。在至少一个实施方式中,这种半导体聚合物可以由两种或更多种绝缘聚合物和两种或更多种离子液体的均匀掺合物形成。非导电性聚合物和离子液体的均匀混合物可以形成为具有可控厚度的半导体聚合物薄膜。这种半导体聚合物可以在众多不同的应用中使用,包括但不限于存储装置。
Description
相关申请的交叉引用
本申请要求2011年02月19日提交的美国临时专利申请号61/444,704的优先权,所述文献的全部内容并入本文。
技术领域
本发明总体上涉及导电有机材料,并且更具体地涉及半导体有机材料。
背景技术
半导体长久以来由硅形成。硅基半导体受生产半导体所需要的复杂生产工艺、缺少灵活性和高成本限制。因此,对于改良的半导体存在需要。
发明简述
公开了由一种或多种绝缘聚合物和一种或多种离子液体形成的半导体材料。这种半导体材料可以通过用一种或多种离子液体掺杂一种或多种绝缘聚合物来合成。这种半导体材料可以在众多不同的应用中使用,包括但不限于传感器和存储装置。
这种半导体材料可以由一种或多种绝缘聚合物和一种或多种离子液体形成。所述离子液体可以包含一种或多种阳离子部分和一种或多种阴离子部分。这种离子液体可以是但不限于以下一种或多种:1,3-二烷基咪唑鎓四氟硼酸盐、1,3-二烷基咪唑鎓溴化物、1,3-二烷基咪唑鎓双三氟甲磺酰亚胺、1-烷基-3-芳烷基-咪唑鎓以及源自天然和可再生资源的那些离子液体,例如但不限于甘油、木糖醇、山梨醇和氯化胆碱。这种绝缘聚合物可以是但不限于以下一种或多种:聚乙烯醇、聚丙烯酸、聚乙二醇、乙基纤维素、聚链烯烃(polyolefins)、聚酯、非肽多胺、聚酰胺、聚碳酸酯、聚烯烃(polyalkenes)、聚乙烯醚、聚乙醇酸交酯、纤维素醚、聚卤乙烯(polyvinyl halides)、聚羟基链烷酸酯、聚酐、聚苯乙烯、聚丙烯酸酯、聚甲基丙烯酸酯、聚氨酯、乙基纤维素、聚苯乙烯、聚(ε-己内酯)、聚(d,l-乳酸)和聚(d,l-乳酸-共-乙醇酸)及共聚物,以及它们的掺合物。这种半导体材料可以是该绝缘聚合物和该离子液体的均匀掺合物。在至少一个实施方式中,所述绝缘聚合物可以由两种或更多种绝缘聚合物形成。类似地,这种离子液体可以由两种或更多种离子液体形成。在另一个实施方式中,绝缘聚合物和离子液体可以形成一种薄膜。该薄膜可以具有预定厚度。这种半导体材料可以由受控温度下以可控厚度挤出的绝缘聚合物和离子液体形成。在另一个实施方式中,由绝缘聚合物和离子液体形成的半导体材料可以形成一种或多种纤维。这种半导体材料可以由按重量计至多达10%的离子液体以及剩余的所述聚合物形成,并且更具体地,可以是按重量计0%和5%之间的离子液体以及剩余的所述聚合物。
在一个实施例中,可以使用该半导体材料以形成一种或多种存储装置。这些存储装置可以设置成存储数据并且可以由一个或多个导电层和半导体薄膜层形成,其中所述导电层安置在第一侧面上的第一绝缘层和第二侧面上的第二绝缘层之间,所述第二侧面位于整体上与所述第一侧面相对的侧面上,所述半导体薄膜层与第一绝缘材料的外表面连接。导电层可以是但不限于碳纳米管(CNT)、氧化锌或金。这种半导体薄膜层可以至少部分地由聚乙酸乙烯酯形成。第一绝缘层可以由有机材料形成。具体而言,第一绝缘层可以由聚甲基丙烯酸甲酯有机材料形成。第二绝缘层可以由有机材料形成。具体而言,第二绝缘层可以由聚甲基丙烯酸甲酯有机材料形成。第一电极可以与半导体薄膜层的外表面连接并且第二电极可以与第二绝缘层的外表面连接。第一电极和第二电极可以由任何导电材料例如但不限于铝形成。
本发明的优点是,半导体材料的使用消除了对使用限制性硅半导体的需要,而更多使用有机半导体,所述有机半导体使得生产可负担得起的、挠性的和可扩展的有机装置成为可能。
下文更详细地描述这些和其他实施方式。
附图简述
并入本说明书中并且形成其部分的附图图解说明现在公开的本发明的几个实施方式,并且与说明书一起,公开了本发明的原理。
图1是本发明的两种不同绝缘聚合物实施例的图表,所述绝缘聚合物用两个离子液体(甘油和山梨醇)掺杂并且显示基于绝缘材料和离子液体之间混合作用的受调节的电阻率水平。
图2是由该半导体材料形成的存储装置的示意图的透视图。
图3是来自该存储装置的磁滞曲线(hysteresis curve)。
发明详述
如图1-3中所示,公开了由一种或多种绝缘聚合物和一种或多种离子液体形成的半导体材料10。这种半导体材料10可以通过用一种或多种离子液体掺杂一种或多种绝缘聚合物来合成。半导体材料10可以在众多不同的应用中使用,包括但不限于传感器和存储装置。
在至少一个实施方式中,离子液体可以是但不限于一种或多种离子液体,所述离子液体可以包含一种或多种阳离子部分和一种或多种阴离子部分。这种离子液体可以是但不限于一种或多种具有以下核心结构的离子材料:和1,3-二烷基咪唑鎓四氟硼酸盐、1,3-二烷基咪唑鎓溴化物、1,3-二烷基咪唑鎓双三氟甲磺酰亚胺、1-烷基-3-芳烷基-咪唑鎓、源自天然和可再生资源的那些离子液体例如但不限于甘油、木糖醇、山梨醇、氯化胆碱,以及具有以下核心结构的材料:
在另一个实施方式中,离子液体可以是在藻油(algae oil)的酯交换期间形成的甘油。这种绝缘聚合物可以是但不限于以下一种或多种:聚乙烯醇、聚丙烯酸、聚乙二醇、乙基纤维素(ethyl cellulose)、聚链烯烃(polyolefins)、聚酯、非肽多胺、聚酰胺、聚碳酸酯、聚烯烃(polyalkenes)、聚乙烯醚、聚乙醇酸交酯、纤维素醚、聚乙烯基卤化物(polyvinyl halides)、聚羟基链烷酸酯、聚酐、聚苯乙烯、聚丙烯酸酯、聚甲基丙烯酸酯、聚氨基甲酸酯、乙基纤维素(ethylcelluloses)、聚苯乙烯、聚(ε-己内酯)、聚(d,l-乳酸)和聚(d,l-乳酸-共-乙醇酸)及共聚物,以及它们的掺合物。在一个实施方式中,这种半导体材料可以是该绝缘聚合物和该离子液体的均匀掺合物。在一个实施方式中,所述绝缘聚合物可以由两种或更多种绝缘聚合物形成。类似地,所述离子液体可以由两种或更多种离子液体形成。
合并的绝缘聚合物和离子液体可以形成薄膜12。薄膜12可以具有预定厚度。半导体材料10可以由受控温度下以可控厚度挤出的一种或多种绝缘聚合物和一种或多种离子液体形成。半导体材料10可以从一种或多种绝缘聚合物和一种或多种离子液体形式形成一种或多种纤维。可以通过用一种或多种离子液体掺杂一种或多种绝缘聚合物来合成半导体材料10,其功能在图1和图3中显示。
半导体材料10可以由按重量计至多达10%的离子液体以及剩余的所述聚合物形成,并且更具体地,可以是按重量计0%和5%之间的离子液体以及剩余的所述聚合物。将离子液体通过以下方式添加至绝缘聚合物:在水或有机溶剂中溶解绝缘聚合物并且向这种混合物添加一种或多种离子液体。可以将所得混合物搅拌1-30分钟。在另一个实施方式中,一种或多种离子液体可以与一种或多种熔融的绝缘聚合物混合。可以将离子液体添加至聚合物熔体并且随后可以将熔体流延成薄膜。相对于绝缘材料而言添加的离子液体的百分比取决于需要在半导体中获得的电导率水平。例如,PVA/PAA和0.1甘油的混合物提供高电导率。
在至少一个实施例中,如图2中所显示,可以使用半导体材料10以形成能够存储数据的存储装置14。存储装置14可以由安置在第一侧面20上的第一绝缘层18和第二侧面24上的第二绝缘层22之间的导电层16形成,所述第二侧面24位于整体上与所述第一侧面20相对的侧面上。导电层16可以是但不限于碳纳米管(CNT)、氧化锌或金。存储装置14也可以包括与第一绝缘材料18的外表面30连接的半导体薄膜层28。半导体薄膜层28可以是挠性的并且可以至少部分地由聚乙酸乙烯酯(PVA)组成。可以将半导体薄膜层28沉积在该装置上以充当半导体层。第一绝缘层18可以由有机材料形成。在至少一个实施方式中,第一绝缘层18可以由聚甲基丙烯酸甲酯有机材料形成。第二绝缘层22可以由有机材料形成。在至少一个实施方式中,第二绝缘层22可以由聚甲基丙烯酸甲酯有机材料形成。
储装置14可以包括与半导体薄膜层28的外表面34连接的第一电极32和与第二绝缘层22的外表面38连接的第二电极36。第一和第二电极32、36由任何导电材料形成,例如但不限于铝。第一和第二电极32、36可以是这样的,从而存储装置14可以由第一电极32、第一绝缘层18、导电层16、第二绝缘层22、半导体薄膜层28和第二电极36形成。
由半导体材料10形成的存储装置14可以在小于2伏特时运行以读取或写入数据,或者读取并写入数据,因而使装置14与逻辑操作电压完全兼容。存储装置14也可以是。
提供前述内容旨在说明、解释和描述本发明的实施方式。对这些实施方式的修改和改编将对本领域技术人员是显而易见的并且可以进行而不脱离本发明的范围或精神。
Claims (20)
1.一种半导体材料,其包含:
至少一种绝缘聚合物;和
至少一种离子液体。
2.根据权利要求1所述的半导体材料,其中所述至少一种离子液体选自1,3-二烷基咪唑鎓四氟硼酸盐、1,3-二烷基咪唑鎓溴化物、1,3-二烷基咪唑鎓双三氟甲磺酰亚胺、1-烷基-3-芳烷基-咪唑鎓、甘油、木糖醇、山梨醇、氯化胆碱和在藻油的酯交换期间形成的甘油所组成的组中。
3.根据权利要求1所述的半导体材料、其中所述至少一种绝缘聚合物选自聚乙烯醇、聚丙烯酸、聚乙二醇、乙基纤维素、聚链烯烃、聚酯、非肽多胺、聚酰胺、聚碳酸酯、聚烯烃、聚乙烯醚、聚乙醇酸交酯、纤维素醚、聚乙烯基卤化物、聚羟基链烷酸酯、聚酐、聚苯乙烯、聚丙烯酸酯、聚甲基丙烯酸酯、聚氨酯、乙基纤维素、聚苯乙烯、聚(ε-己内酯)、聚(d,l-乳酸)和聚(d,l-乳酸-共-乙醇酸)及共聚物所组成的组中。
4.根据权利要求1所述的半导体材料,其中所述半导体材料是所述至少一种绝缘聚合物和所述至少一种离子液体的均匀掺合物。
5.根据权利要求1所述的半导体材料,其中至少一种绝缘聚合物包含至少两种绝缘聚合物。
6.根据权利要求1所述的半导体材料,其中至少一种离子液体包含至少两种离子液体。
7.根据权利要求1所述的半导体材料,其中所述至少一种绝缘聚合物和至少一种离子液体形成薄膜。
8.根据权利要求7所述的半导体材料,其中所述薄膜具有预定厚度。
9.根据权利要求1所述的半导体材料,其中由所述至少一种绝缘聚合物和至少一种离子液体形成的半导体材料在受控温度下以可控的厚度挤出。
10.根据权利要求1所述的半导体材料,其中由所述至少一种绝缘聚合物和至少一种离子液体形成的半导体材料形成至少一种纤维。
11.根据权利要求1所述的半导体材料,其中所述至少一种离子液体包含按重量计至多达10%的离子液体。
12.根据权利要求1所述的半导体材料,其中所述至少一种离子液体包含按重量计至多达5%的离子液体。
13.一种存储装置,其包括:
至少一种装置,其由安置在第一侧面上的第一绝缘层和第二侧面上的第二绝缘层之间的导电层形成,所述第二侧面位于整体上与所述第一侧面相对的侧面上;和
与第一绝缘材料的外表面连接的半导体薄膜层。
14.根据权利要求13所述的存储装置,其中所述半导体薄膜层至少部分地由聚乙酸乙烯酯组成。
15.根据权利要求13所述的存储装置,其中所述第一绝缘层由有机材料形成。
16.根根据权利要求15所述的存储装置,其中所述第一绝缘层由聚甲基丙烯酸甲酯有机材料形成。
17.根据权利要求13所述的存储装置,其中所述第二绝缘层由有机材料形成。
18.根根据权利要求17所述的存储装置,其中所述第二绝缘层由聚甲基丙烯酸甲酯有机材料形成。
19.根据权利要求13所述的存储装置,还包含与半导体薄膜层的外表面连接的第一电极和与第二绝缘层的外表面连接的第二电极。
20.根据权利要求19所述的存储装置,其中所述第一和第二电极由铝形成。
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