JP2014236514A - 圧電素子パッケージ及びその製造方法 - Google Patents
圧電素子パッケージ及びその製造方法 Download PDFInfo
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- JP2014236514A JP2014236514A JP2014113779A JP2014113779A JP2014236514A JP 2014236514 A JP2014236514 A JP 2014236514A JP 2014113779 A JP2014113779 A JP 2014113779A JP 2014113779 A JP2014113779 A JP 2014113779A JP 2014236514 A JP2014236514 A JP 2014236514A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 11
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- 230000005284 excitation Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
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- 230000001070 adhesive effect Effects 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Abstract
【解決手段】本発明は、下部に複数の端子が形成されたケースと、上記ケースの内部に形成される圧電素子と、上記ケースの下部に形成される薄膜の温度測定素子と、上記ケースを密閉させるカバー部材と、を含む圧電素子パッケージ及びその製造方法を提供することができる。
【選択図】図1
Description
11a、11b 第1の圧電素子連結電極
12 ケースダミー電極
13、14 端子
20 温度測定素子
21a、21b 第2の圧電素子連結電極
22a、22b 温度測定素子入出力電極
30 圧電素子
31a 第1の励振電極
31b 第2の励振電極
32 ダミー電極
40 カバー部材
C 連結部
H 導電性ビア
T 貫通部
100 圧電素子パッケージ
Claims (8)
- 下部に複数の端子が形成されたケースと、
前記ケースの内部に形成される圧電素子と、
前記ケースの下部に形成される薄膜の温度測定素子と、
前記ケースの上部を密閉させるカバー部材と、
を含む、圧電素子パッケージ。 - 前記圧電素子は、上部に第1の励振電極が形成され、下部に第2の励振電極が形成され、
前記第1及び第2の励振電極は、それぞれ前記圧電素子の下部のコーナー部分に伸びて形成される、請求項1に記載の圧電素子パッケージ。 - 前記圧電素子の第1及び第2の励振電極が形成されたコーナーに対応するように、前記ケースの内部の底面のコーナーの一部に第1の圧電素子連結電極が形成される、請求項2に記載の圧電素子パッケージ。
- 前記圧電素子の下部にダミー電極が形成される、請求項1に記載の圧電素子パッケージ。
- 前記端子は、前記ケースの下面のコーナーにそれぞれ時計回り又は反時計回りに温度測定入力端子、温度測定出力端子、圧電素子入力端子、圧電素子出力端子が配置される、請求項1に記載の圧電素子パッケージ。
- 前記カバー部材は、金属で形成される、請求項1に記載の圧電素子パッケージ。
- 前記端子の一つと前記カバー部材が電気的に連結される、請求項6に記載の圧電素子パッケージ。
- 前記ケースの内部に圧電素子を搭載する段階と、
前記ケースの上部にカバー部材を結合する段階と、
前記ケースの下部に薄膜の温度測定素子を結合する段階と、
を含む、圧電素子パッケージの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0063533 | 2013-06-03 | ||
KR1020130063533A KR101532134B1 (ko) | 2013-06-03 | 2013-06-03 | 압전 소자 패키지 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014236514A true JP2014236514A (ja) | 2014-12-15 |
JP5863881B2 JP5863881B2 (ja) | 2016-02-17 |
Family
ID=51985074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014113779A Active JP5863881B2 (ja) | 2013-06-03 | 2014-06-02 | 圧電素子パッケージ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9929337B2 (ja) |
JP (1) | JP5863881B2 (ja) |
KR (1) | KR101532134B1 (ja) |
CN (1) | CN104218144B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6644457B2 (ja) * | 2014-03-26 | 2020-02-12 | Tdk株式会社 | 圧電デバイス |
WO2016182396A1 (ko) * | 2015-05-13 | 2016-11-17 | 한양대학교 산학협력단 | 압전 소자를 이용한 전력 소자의 온도 계측 장치, 열응력 저감 장치 및 그 제조 방법 |
US10347816B2 (en) | 2016-02-05 | 2019-07-09 | Tdk Corporation | Piezoelectric driving device |
US10718672B2 (en) * | 2017-01-20 | 2020-07-21 | Samsung Electro-Mechanics Co., Ltd. | Piezoelectric device package |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11265955A (ja) * | 1998-03-17 | 1999-09-28 | Sumitomo Metal Electronics Devices Inc | 圧電デバイス用パッケージおよびその製造方法 |
JP2005244925A (ja) * | 2004-01-29 | 2005-09-08 | Kyocera Corp | 圧電発振器 |
JP2012249265A (ja) * | 2011-05-31 | 2012-12-13 | Kyocera Crystal Device Corp | 圧電デバイス |
JP2013055572A (ja) * | 2011-09-06 | 2013-03-21 | Seiko Epson Corp | 圧電デバイス、及び電子機器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050030814A (ko) | 2003-09-26 | 2005-03-31 | (주) 래트론 | 온도보상형 압전 세라믹 레조네이터 |
US20050225406A1 (en) * | 2004-01-29 | 2005-10-13 | Kyocera Corporation | Temperature-compensated quartz-crystal oscillator |
JP2006191327A (ja) * | 2005-01-05 | 2006-07-20 | Epson Toyocom Corp | 薄型高安定圧電発振器 |
CN101771428A (zh) * | 2010-01-19 | 2010-07-07 | 青岛海信移动通信技术股份有限公司 | 一种温度检测电路及移动通信设备 |
KR20120052821A (ko) * | 2010-11-16 | 2012-05-24 | 삼성전기주식회사 | 복합 수정 진동자 및 그 제조방법 |
JP5747574B2 (ja) | 2011-03-11 | 2015-07-15 | セイコーエプソン株式会社 | 圧電デバイス及び電子機器 |
JP2013058864A (ja) * | 2011-09-07 | 2013-03-28 | Daishinku Corp | 圧電デバイス |
CN202814620U (zh) * | 2012-07-10 | 2013-03-20 | 中国电子科技集团公司第四十八研究所 | 一种分体式压力传感器 |
-
2013
- 2013-06-03 KR KR1020130063533A patent/KR101532134B1/ko active IP Right Grant
-
2014
- 2014-05-30 CN CN201410239007.9A patent/CN104218144B/zh not_active Withdrawn - After Issue
- 2014-06-02 JP JP2014113779A patent/JP5863881B2/ja active Active
- 2014-06-03 US US14/294,910 patent/US9929337B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11265955A (ja) * | 1998-03-17 | 1999-09-28 | Sumitomo Metal Electronics Devices Inc | 圧電デバイス用パッケージおよびその製造方法 |
JP2005244925A (ja) * | 2004-01-29 | 2005-09-08 | Kyocera Corp | 圧電発振器 |
JP2012249265A (ja) * | 2011-05-31 | 2012-12-13 | Kyocera Crystal Device Corp | 圧電デバイス |
JP2013055572A (ja) * | 2011-09-06 | 2013-03-21 | Seiko Epson Corp | 圧電デバイス、及び電子機器 |
Also Published As
Publication number | Publication date |
---|---|
JP5863881B2 (ja) | 2016-02-17 |
KR101532134B1 (ko) | 2015-06-26 |
KR20140142016A (ko) | 2014-12-11 |
US9929337B2 (en) | 2018-03-27 |
CN104218144B (zh) | 2017-07-04 |
US20140355647A1 (en) | 2014-12-04 |
CN104218144A (zh) | 2014-12-17 |
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