JP2014229649A - Semiconductor module and manufacturing method thereof - Google Patents

Semiconductor module and manufacturing method thereof Download PDF

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JP2014229649A
JP2014229649A JP2013105915A JP2013105915A JP2014229649A JP 2014229649 A JP2014229649 A JP 2014229649A JP 2013105915 A JP2013105915 A JP 2013105915A JP 2013105915 A JP2013105915 A JP 2013105915A JP 2014229649 A JP2014229649 A JP 2014229649A
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case
semiconductor module
peripheral wall
resin
communication
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JP6208980B2 (en
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佐藤　豊
Yutaka Sato
豊 佐藤
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Marelli Corp
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Calsonic Kansei Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To restrain air bubbles when a semiconductor element is potted by resin.SOLUTION: A case 7 comprises a heat-radiating base plate 3, and a peripheral wall 5 standing at a peripheral edge of the base plate 3. A pedestal 17 having a ceramic substrate 11 and metal layers 13, 15 is arranged on the base plate 3 inside the peripheral wall 5, and a power semiconductor element 23 is mounted and arranged on the pedestal 17. A ventilation hole 39 extending in a vertical direction is provided on the peripheral wall 5, and a lower part of the ventilation hole 39 is communicated with a bottom part of the case 7 via a communication part 39b. The communication part 39b is opened in the case 7 across an entire circumference of the peripheral wall 5.

Description

本発明は、ケース内に配置した半導体素子を樹脂でポッティングして封止した半導体モジュール及びその製造方法に関する。   The present invention relates to a semiconductor module in which a semiconductor element placed in a case is potted with a resin and sealed, and a method for manufacturing the same.

従来、放熱用のベース基板上に、半導体素子を搭載した金属層を有するセラミックス基板を配置し、ケース側壁で囲んだ内側のセラミックス基板及び半導体素子をエポキシ樹脂でポッティングして封止した半導体モジュールが知られている（下記特許文献１参照）。   Conventionally, there has been a semiconductor module in which a ceramic substrate having a metal layer on which a semiconductor element is mounted is disposed on a base board for heat dissipation, and the inner ceramic substrate and the semiconductor element surrounded by a case side wall are potted and sealed with epoxy resin. It is known (see Patent Document 1 below).

特開２００６−１７９７３２号公報JP 2006-179732 A

ところで、上記ポッティング用の樹脂は粘度が比較的高く、このためケース内の下部に、樹脂によって空気が閉じ込められた状態となる気泡が発生しやすく、改善が望まれている。   By the way, the above-mentioned potting resin has a relatively high viscosity. Therefore, bubbles are easily generated in the lower part of the case in a state where air is trapped by the resin, and improvement is desired.

そこで、本発明は、半導体素子を樹脂でポッティングする際に気泡の発生を抑制することを目的としている。   Accordingly, an object of the present invention is to suppress the generation of bubbles when potting a semiconductor element with a resin.

本発明は、ケース内に配置した半導体素子を樹脂でポッティングして封止する構造の半導体モジュールであって、前記ケースの側壁は、上下方向に延びる通気孔を備え、この通気孔の下部は、前記ケース内の底部に連通していることを特徴とする。   The present invention is a semiconductor module having a structure in which a semiconductor element disposed in a case is potted and sealed with a resin, and the side wall of the case includes a vent hole extending in a vertical direction. It communicates with the bottom of the case.

本発明によれば、半導体素子を樹脂でポッティングする際に、注入する樹脂によって下部に押し込められる空気は、通気孔を通して外部に放出されるので、樹脂で閉じ込められた状態の気泡の発生を抑制することができる。   According to the present invention, when the semiconductor element is potted with resin, the air pushed into the lower part by the injected resin is released to the outside through the vent hole, so that the generation of bubbles confined by the resin is suppressed. be able to.

図１は、本発明の一実施形態に係わるパワー半導体モジュールの断面図である。FIG. 1 is a cross-sectional view of a power semiconductor module according to an embodiment of the present invention. 図２は、図１のパワー半導体モジュールにおけるケースの側壁の一部を示す平面図である。FIG. 2 is a plan view showing a part of the side wall of the case in the power semiconductor module of FIG. 図３は図２のＣ−Ｃ断面図である。3 is a cross-sectional view taken along the line CC of FIG. 図４は、より具体化したケースの形状を示す、図２に対応する平面図である。FIG. 4 is a plan view corresponding to FIG. 2, showing a more specific shape of the case. 図５は図４のＤ−Ｄ断面図である。5 is a cross-sectional view taken along the line DD of FIG. 図６は図４のＥ−Ｅ断面図である。6 is a cross-sectional view taken along line EE in FIG. 図７（ａ）は図４のＦ−Ｆ断面図、図７（ｂ）は図７（ａ）の変形例を示す断面図である。7A is a cross-sectional view taken along line FF in FIG. 4, and FIG. 7B is a cross-sectional view illustrating a modification of FIG. 7A. 図８は、図１のパワー半導体モジュールにおけるケース内の領域にエポキシ樹脂をポッティングした状態を示す断面図である。FIG. 8 is a cross-sectional view showing a state where an epoxy resin is potted in a region in the case of the power semiconductor module of FIG. 図９は図１に対する比較例を示す断面図である。FIG. 9 is a cross-sectional view showing a comparative example with respect to FIG.

以下、本発明の実施の形態を図面に基づき説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は、本発明の一実施形態に係わる半導体モジュールとしてのパワー半導体モジュール１の断面図で、このパワー半導体モジュール１は、アルミニウム合金などの金属で構成される放熱用のベース板３を備え、ベース板３内には冷却水が流れる冷却水通路３ａを設けている。ベース板３は、平面視で矩形状であり、そのベース板３の外周側上面には、周壁５が設けられ、これらベース板３及び周壁５はケース７を構成している。   FIG. 1 is a cross-sectional view of a power semiconductor module 1 as a semiconductor module according to an embodiment of the present invention. The power semiconductor module 1 includes a base plate 3 for heat dissipation composed of a metal such as an aluminum alloy. A cooling water passage 3 a through which cooling water flows is provided in the base plate 3. The base plate 3 has a rectangular shape in plan view, and a peripheral wall 5 is provided on the outer peripheral side upper surface of the base plate 3, and the base plate 3 and the peripheral wall 5 constitute a case 7.

ベース板３上の周壁５で囲まれた内側の領域９には、セラミックス基板１１の上下両側に、銅などからなる金属層１３，１５を設けた複合基板である台座１７を、絶縁層１９を介して配置している。そして、上部の金属層１３上にはハンダ２１を介してパワー半導体素子２３を実装している。上記した台座１７やその上部のパワー半導体素子２３を含めて半導体モジュール本体２５を構成している。   In the inner region 9 surrounded by the peripheral wall 5 on the base plate 3, a base 17, which is a composite substrate provided with metal layers 13 and 15 made of copper or the like on both upper and lower sides of the ceramic substrate 11, an insulating layer 19 is provided. Is arranged through. A power semiconductor element 23 is mounted on the upper metal layer 13 via solder 21. A semiconductor module main body 25 is configured including the pedestal 17 and the power semiconductor element 23 above the pedestal 17.

図２は、ケース７の周壁５の一部を示す平面図で、ケース７の全体の形状は図２中で上下方向に長い長方形状であり、その長手方向（図２中で上下方向）に沿って３相（Ｕ相、Ｖ相、Ｗ相）分の前記した領域９が形成される。なお、図２では、該領域９内に配置する半導体モジュール本体２５を省略している。   FIG. 2 is a plan view showing a part of the peripheral wall 5 of the case 7, and the entire shape of the case 7 is a rectangular shape that is long in the vertical direction in FIG. 2, and in its longitudinal direction (vertical direction in FIG. 2). The above-described region 9 corresponding to three phases (U phase, V phase, and W phase) is formed along. In FIG. 2, the semiconductor module main body 25 disposed in the region 9 is omitted.

ケース７の周壁５は、図２中で上下方向に長い長方形状における左右一対の長辺部２７と、図２中で上下両側に位置する一対の短辺部２９（図２中で下部側は省略されている）と、を備えている。また、３相（Ｕ相、Ｖ相、Ｗ相）分の各領域９は、短辺部２９と平行な隔壁部３１によって仕切られている。上記した周壁５（長辺部２７、短辺部２９）及び隔壁部３１は、ケース７の側壁を構成している。   The peripheral wall 5 of the case 7 includes a pair of left and right long side portions 27 in a rectangular shape that is long in the vertical direction in FIG. 2 and a pair of short side portions 29 located on both the upper and lower sides in FIG. Are omitted). Further, each region 9 for three phases (U phase, V phase, W phase) is partitioned by a partition wall portion 31 parallel to the short side portion 29. The peripheral wall 5 (long side portion 27, short side portion 29) and partition wall portion 31 described above constitute the side wall of the case 7.

図２中で右側の一方の長辺部２７の上面には、図示しない外部バスバーと接続する電源用端子３３，３５がＵ、Ｖ、Ｗの各相毎に設けられている。図２中で左側の他方の長辺部２７の上面には、図示しない他の外部バスバーと接続するＵ、Ｖ、Ｗ端子３７が各相毎にそれぞれ設けられている。これらの各端子３３，３５，３７に電気的に接続する図示しないインサートナットが長辺部２７内に埋設されている。このインサートナットと台座１７側との電気的な接続構造は省略している。   On the upper surface of one long side 27 on the right side in FIG. 2, power supply terminals 33 and 35 connected to an external bus bar (not shown) are provided for each of U, V, and W phases. 2, U, V, and W terminals 37 connected to other external bus bars (not shown) are provided for the respective phases on the upper surface of the other long side portion 27 on the left side. An insert nut (not shown) that is electrically connected to each of the terminals 33, 35, and 37 is embedded in the long side portion 27. The electrical connection structure between the insert nut and the base 17 side is omitted.

そして、本実施形態では、周壁５内に上下方向に貫通するようにして延びる通気孔３９を形成している。ここでの通気孔３９は、図２に示すように、Ｕ、Ｖ、Ｗの各１相分に対応する周壁５の一対の長辺部２７にそれぞれ２箇所、周壁５の短辺部２９には３箇所設けている。図２では、通気孔３９を隔壁部３１に設けていないが、隔壁部３１に設けることもできる。なお、図１の周壁５の左右の長辺部２７の断面構造は、図１中で左側が図２のＡ−Ａ断面図に対応し、図１中で右側が図２のＢ−Ｂ断面図に対応している。   And in this embodiment, the vent hole 39 extended so that it may penetrate in the up-down direction in the surrounding wall 5 is formed. As shown in FIG. 2, the ventilation holes 39 here are provided at two locations on the pair of long side portions 27 of the peripheral wall 5 corresponding to each phase of U, V, and W, respectively, and on the short side portion 29 of the peripheral wall 5. Are provided in three places. In FIG. 2, the vent holes 39 are not provided in the partition wall 31, but can be provided in the partition wall 31. The cross-sectional structure of the left and right long side portions 27 of the peripheral wall 5 in FIG. 1 corresponds to the AA cross section in FIG. 2 on the left side in FIG. 1, and the BB cross section in FIG. Corresponds to the figure.

通気孔３９は、図１に示すように、周壁５の上面に空気放出口となる開口３９ａを備え、下部はケース７内の領域９の底部に、連通部３９ｂを介して連通している。連通部３９ｂは、複数の通気孔３９の下部相互を連通し、周壁５（長辺部２７、短辺部２９）及び隔壁部３１の内周側の全周にわたり連続して形成されている。   As shown in FIG. 1, the vent hole 39 includes an opening 39 a serving as an air discharge port on the upper surface of the peripheral wall 5, and a lower portion communicates with a bottom portion of the region 9 in the case 7 via a communication portion 39 b. The communication portion 39 b communicates with the lower portions of the plurality of vent holes 39 and is continuously formed over the entire circumference on the inner peripheral side of the peripheral wall 5 (long side portion 27, short side portion 29) and the partition wall portion 31.

連通部３９ｂは、図２のＢ−Ｂ線に対応する断面構造（図１の右側の長辺部２７）で示すように、ケース７内の領域９に直接連通して開口する開口部３９ｂ１と、開口部３９ｂ１の領域９と反対側位置にて開口部３９ｂ１よりも上方に位置する連通路３９ｂ２とを備えている。連通路３９ｂ２は、互いに隣接する通気孔３９の下部相互を連通している。このような開口部３９ｂ１及び連通路３９ｂ２は、周壁５の領域９側の部分を下方に突出させる突起３９ｃを設けることで形成することができる。突起３９ｃは、周壁５（長辺部２７、短辺部２９）及び隔壁部３１の内周側の全周にわたり連続して設けてある。すなわち、突起３９ｃをこのようにして全周にわたり設けることで、開口部３９ｂ１が全周にわたり形成される。   As shown in the cross-sectional structure corresponding to the line BB in FIG. 2 (the long side portion 27 on the right side in FIG. 1), the communication portion 39 b is directly connected to the region 9 in the case 7 and opens to the opening 39 b 1. And a communication passage 39b2 positioned above the opening 39b1 at a position opposite to the region 9 of the opening 39b1. The communication path 39b2 communicates the lower portions of the adjacent vent holes 39 with each other. Such an opening 39b1 and the communication path 39b2 can be formed by providing a projection 39c that projects a portion of the peripheral wall 5 on the region 9 side downward. The protrusion 39 c is provided continuously over the entire circumference on the inner peripheral side of the peripheral wall 5 (long side portion 27, short side portion 29) and the partition wall portion 31. That is, by providing the protrusion 39c over the entire circumference in this way, the opening 39b1 is formed over the entire circumference.

図３は、図２のＣ−Ｃ断面図であり、連通路３９ｂ２は、互いに隣接する通気孔３９同士を直接連通している。また、図３に示すように、通気孔３９は、開口３９ａ側が狭く、連通部３９ｂ側が広くなるようなテーパ形状としている。   3 is a cross-sectional view taken along the line C-C in FIG. 2, and the communication path 39 b 2 directly communicates the adjacent vent holes 39 with each other. Further, as shown in FIG. 3, the vent hole 39 has a tapered shape such that the opening 39a side is narrow and the communicating portion 39b side is wide.

図４〜図７は、より具体化したケース７の形状を示すもので、図１、図２と同一構成部分には同一符号を付して説明する。図４は、図２に対応しているが、図２に対し紙面上で時計回り方向に９０度回転した図となっている。ただし、図４と図２とでは、電源用端子３３，３５とＵ、Ｖ、Ｗ端子３７とが、互いに反対側の長辺部２７に設けられている点で異なる。また、図４では、隔壁部３１にも通気孔３９を設けている。   4 to 7 show a more specific shape of the case 7, and the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals. FIG. 4 corresponds to FIG. 2, but is a view rotated 90 degrees in the clockwise direction on the paper with respect to FIG. 2. However, FIG. 4 and FIG. 2 differ in that the power supply terminals 33 and 35 and the U, V, and W terminals 37 are provided on the long side portions 27 on the opposite sides. In FIG. 4, a vent hole 39 is also provided in the partition wall 31.

図５は図４のＤ−Ｄ断面図、図６は図４のＥ−Ｅ断面図であり、周壁５（長辺部２７、短辺部２９）の下部には、図５、図６中で左右方向に延びる開口部３９ｂ１が形成されているのがわかる。また、図５に示すように、短辺部２９及び隔壁部３１の下部には、開口部３９ｂ１に連通して開口部３９ｂ１より上方に位置する連通路３９ｂ２が形成されているのがわかる。   5 is a sectional view taken along the line DD of FIG. 4, and FIG. 6 is a sectional view taken along the line EE of FIG. 4. The lower part of the peripheral wall 5 (long side portion 27, short side portion 29) is shown in FIGS. It can be seen that an opening 39b1 extending in the left-right direction is formed. Further, as shown in FIG. 5, it can be seen that a communication path 39b2 is formed below the short side portion 29 and the partition wall portion 31 so as to communicate with the opening 39b1 and to be positioned above the opening 39b1.

図７（ａ）は図４のＦ−Ｆ断面図であり、周壁５における長辺部２７の下部には、上記図６の開口部３９ｂ１の奥側に図７（ａ）中で左右方向に延びる連通路３９ｂ２が形成されているのがわかる。この連通路３９ｂ２は、互いに隣接する通気孔３９の下部同士を直接連通している。   7A is a cross-sectional view taken along the line F-F in FIG. 4. In the lower part of the long side portion 27 in the peripheral wall 5, the back side of the opening 39 b 1 in FIG. It can be seen that an extended communication path 39b2 is formed. The communication passage 39b2 directly communicates the lower portions of the adjacent vent holes 39 with each other.

図７（ｂ）は図７（ａ）の変形例であり、連通路３９ｂ２内の上壁の下面に左右一対の傾斜面３９ｂ３を形成している。この一対の傾斜面３９ｂ３は、ケース７の周壁５の周方向に沿って互いに隣接する通気孔３９相互間のほぼ中心位置Ｓに対し、通気孔３９側が上方となるよう傾斜している。すなわち、通気孔３９の下端開口部は、中心位置Ｓよりも上方に位置している。   FIG. 7B is a modification of FIG. 7A, and a pair of left and right inclined surfaces 39b3 are formed on the lower surface of the upper wall in the communication passage 39b2. The pair of inclined surfaces 39b3 are inclined so that the air hole 39 side is upward with respect to the substantially central position S between the air holes 39 adjacent to each other along the circumferential direction of the peripheral wall 5 of the case 7. That is, the lower end opening of the vent hole 39 is located above the center position S.

次に、作用を説明する。図１、図２のように、周壁５及び隔壁部３１で囲まれた領域９内の半導体モジュール本体２５に対し、図８のようにエポキシ樹脂４１でポッティングにより封止する。このようなポッティングに使用するエポキシ樹脂４１は粘土が比較的高いことから、領域９に樹脂を充填する過程で、該樹脂によって空気が内部に閉じ込められてしまい、図９のように通気孔３９を設けていない比較例で示すように、ケース７の下部（底部）に大きな気泡４３が発生してしまう。   Next, the operation will be described. As shown in FIGS. 1 and 2, the semiconductor module body 25 in the region 9 surrounded by the peripheral wall 5 and the partition wall 31 is sealed by potting with an epoxy resin 41 as shown in FIG. Since the epoxy resin 41 used for such potting is relatively high in clay, air is trapped inside by the resin in the process of filling the region 9 with the resin, and the vent holes 39 are formed as shown in FIG. As shown in the comparative example which is not provided, a large bubble 43 is generated in the lower part (bottom part) of the case 7.

このような大きな気泡４３の発生は、特にセラミックス基板１１の両面に金属層１３，１５を設けた台座１７を備える実装構造で顕著となる。この場合、台座１７を製造する際にセラミックス基板１１を保持した状態で金属層１３，１５を形成する必要があることから、セラミックス基板１１の周縁を金属層１３，１５から突出させた保持部１１ａを備えている。このため、該保持部１１ａが庇となってその下部に気泡４３が発生しやすい。   The generation of such large bubbles 43 is particularly noticeable in a mounting structure including the base 17 provided with the metal layers 13 and 15 on both surfaces of the ceramic substrate 11. In this case, since it is necessary to form the metal layers 13 and 15 while holding the ceramic substrate 11 when the pedestal 17 is manufactured, the holding portion 11a in which the periphery of the ceramic substrate 11 protrudes from the metal layers 13 and 15 is required. It has. For this reason, the holding part 11a becomes a ridge and bubbles 43 are easily generated in the lower part thereof.

これに対して本実施形態では、周壁５や隔壁部３１に通気孔３９及び、通気孔３９の下部に連通する連通部３９ｂを設けている。このため、エポキシ樹脂４１を充填する過程で、該充填するエポキシ樹脂４１により下部に空気が閉じ込められても、該空気は連通部３９ｂ及び通気孔３９を経て通気孔３９の上部の開口３９ａから外部に放出される。このため、図８に示すように、セラミックス基板１１に上記した保持部１１ａを備える実装構造であっても、エポキシ樹脂４１をより確実にケース７の底部に導くことができ、発生する気泡４３を、より小さく抑えることができる。   On the other hand, in the present embodiment, the peripheral wall 5 and the partition wall 31 are provided with a vent hole 39 and a communication portion 39 b that communicates with the lower portion of the vent hole 39. Therefore, even when air is trapped in the lower part by the filled epoxy resin 41 in the process of filling the epoxy resin 41, the air passes through the communication part 39 b and the vent hole 39 to the outside from the opening 39 a at the upper part of the vent hole 39. To be released. For this reason, as shown in FIG. 8, even in the mounting structure including the holding portion 11 a described above on the ceramic substrate 11, the epoxy resin 41 can be more reliably guided to the bottom portion of the case 7, and the generated bubbles 43 are generated. , Can be kept smaller.

その際、上記通気孔３９の下部は、連通部３９ｂを通してケース７の底部に連通しているので、ケース７の底部（底面）に押し込められる空気を、連通部３９ｂ及び通気孔３９を通してより確実に外部に放出することができる。気泡４３をより小さくすることで、充填後のエポキシ樹脂４１が剥がれにくくなり、ポッティングして封止することによる、防湿や絶縁効果及び、半田寿命の向上など、信頼性の高い製品が得られる。   At that time, since the lower part of the vent hole 39 communicates with the bottom part of the case 7 through the communication part 39 b, the air pushed into the bottom part (bottom face) of the case 7 can be more reliably transmitted through the communication part 39 b and the vent hole 39. Can be released to the outside. By making the bubbles 43 smaller, the filled epoxy resin 41 is less likely to be peeled off, and a highly reliable product such as moisture-proofing, insulating effect, and improvement in solder life can be obtained by potting and sealing.

また、本実施形態では、複数の通気孔３９の下部相互を連通する連通部３９ｂが周壁５や隔壁部３１の下部に設けられ、連通部３９ｂの開口部３９ｂ１は、ケース７内の底部に開口して側壁である周壁５及び隔壁部３１の全周にわたり連続して形成されている。このため、ケース７の底部に押し込められた空気は、周壁５（長辺部２７、短辺部２９）及び隔壁部３１で囲まれた領域９内の周囲全周の広い範囲にわたり外部に放出でき、気泡４３の発生をより低減することができる。   Further, in the present embodiment, a communication portion 39b that communicates with the lower portions of the plurality of vent holes 39 is provided in the lower portion of the peripheral wall 5 and the partition wall portion 31, and the opening 39b1 of the communication portion 39b opens at the bottom of the case 7. Thus, it is continuously formed over the entire circumference of the peripheral wall 5 and the partition wall 31 which are side walls. For this reason, the air pushed into the bottom of the case 7 can be discharged to the outside over a wide range of the entire circumference in the region 9 surrounded by the peripheral wall 5 (long side portion 27, short side portion 29) and the partition wall portion 31. The generation of bubbles 43 can be further reduced.

また、本実施形態では、連通部３９ｂは、複数の通気孔３９の下部相互を直接連通する連通路３９ｂ２と、この連通路３９ｂ２より下方に位置してケース７内の底部に開口する開口部３９ｂ１と、を有している。この場合、ケース７内の底部から開口部３９ｂ１に取り込んだ空気は、その一部が通気孔３９に対応する位置付近から通気孔３９に直接流れ、他の一部が図３、図７に示す連通路３９ｂ２に一旦取り込まれる。   In the present embodiment, the communication portion 39b includes a communication passage 39b2 that directly communicates with the lower portions of the plurality of vent holes 39, and an opening 39b1 that is located below the communication passage 39b2 and opens at the bottom in the case 7. And have. In this case, part of the air taken into the opening 39b1 from the bottom in the case 7 flows directly from the vicinity of the position corresponding to the vent 39 to the vent 39, and the other part is shown in FIGS. Once taken into the communication path 39b2.

上記連通路３９ｂ２に一旦取り込まれた空気は、連通路３９ｂ２を周方向に流れて通気孔３９に達し、通気孔３９の上部の開口３９ａから外部に放出される。この場合、開口部３９ｂ１から、開口部３９ｂ１より上方位置にある連通路３９ｂ２に取り込んだ空気を、図１、図５に示す突起３９ｃによって、連通路３９ｂ２から開口部３９ｂ１へ逆流するのを抑えることになり、通気孔３９に効率よく導くことができる。   The air once taken into the communication path 39b2 flows in the circumferential direction through the communication path 39b2, reaches the vent hole 39, and is discharged to the outside from the opening 39a at the upper part of the vent hole 39. In this case, the air taken into the communication path 39b2 located above the opening 39b1 from the opening 39b1 is prevented from flowing back from the communication path 39b2 to the opening 39b1 by the projection 39c shown in FIGS. Thus, the air can be efficiently guided to the vent hole 39.

また、本実施形態では、連通路３９ｂ２内の上壁の下面は、図７（ｂ）に示すように、周壁５や隔壁部３１の周方向に沿って互いに隣接する通気孔３９相互間の中心位置Ｓに対し、通気孔３９側が上方となるよう傾斜している傾斜面３９ｂ３を備える構成とすることもできる。この場合、開口部３９ｂ１から連通路３９ｂ２に取り込んだ空気が、傾斜面３９ｂ３に沿って通気孔３９までより効率よく円滑に流れ、空気の放出効率がより向上し、気泡４３の発生をより一層低減することができる。   In the present embodiment, the lower surface of the upper wall in the communication passage 39b2 is the center between the adjacent vent holes 39 along the circumferential direction of the peripheral wall 5 and the partition wall 31 as shown in FIG. 7B. It can also be set as the structure provided with the inclined surface 39b3 inclined so that the ventilation hole 39 side may become the upper side with respect to the position S. In this case, the air taken into the communication path 39b2 from the opening 39b1 flows more efficiently and smoothly along the inclined surface 39b3 to the vent hole 39, the air discharge efficiency is further improved, and the generation of bubbles 43 is further reduced. can do.

また、本実施形態では、ケース７の内側の領域９内の空気を、通気孔３９を通して外部に逃がす際に、通気孔３９の外部から空気を吸引するようにすることもできる。これにより、領域９内に注入する樹脂が、例えば自重によりケース７の底部まで到達しにくい程粘度が高い場合であっても、空気を通気孔３９から強制的に吸引することにより、樹脂をケース７の底部まで行き渡らせ、これによって気泡４３の発生を抑えることができる。   Further, in the present embodiment, when the air in the region 9 inside the case 7 is allowed to escape to the outside through the vent hole 39, the air can be sucked from the outside of the vent hole 39. Thus, even if the resin injected into the region 9 is so viscous that it is difficult to reach the bottom of the case 7 due to its own weight, for example, the resin is forced to be sucked from the vent hole 39 to remove the resin from the case 9. 7, the generation of the bubbles 43 can be suppressed.

以上、本発明の実施形態について説明したが、これらの実施形態は本発明の理解を容易にするために記載された単なる例示に過ぎず、本発明は当該実施形態に限定されるものではない。本発明の技術的範囲は、上記実施形態で開示した具体的な技術事項に限らず、そこから容易に導きうる様々な変形、変更、代替技術なども含むものである。   As mentioned above, although embodiment of this invention was described, these embodiment is only the illustration described in order to make an understanding of this invention easy, and this invention is not limited to the said embodiment. The technical scope of the present invention is not limited to the specific technical matters disclosed in the above embodiment, but includes various modifications, changes, alternative techniques, and the like that can be easily derived therefrom.

例えば、上記した実施形態では、ポッティングで使用する樹脂をエポキシ樹脂４１としているが、これに限るものではない。また、セラミックス基板１１の周縁を金属層１３，１５から突出させた保持部１１ａを備えていない実装構造にも、本発明を適用できる。   For example, in the above-described embodiment, the resin used for potting is the epoxy resin 41, but is not limited thereto. Further, the present invention can also be applied to a mounting structure that does not include the holding portion 11 a in which the peripheral edge of the ceramic substrate 11 is protruded from the metal layers 13 and 15.

１ パワー半導体モジュール（半導体モジュール）
５ ケースの周壁（ケースの側壁）
７ ケース
９ ケースの側壁の内側の領域
２３ パワー半導体素子
３１ 隔壁部（ケースの側壁）
３９ 通気孔
３９ｂ 連通部
３９ｂ１ 連通部の開口部
３９ｂ２ 連通部の連通路
３９ｂ３ 連通路の傾斜面（上壁の下面）
４１ エポキシ樹脂（樹脂） 1 Power semiconductor module (semiconductor module)
5 Case peripheral wall (case side wall)
7 Case 9 Region inside the side wall of the case 23 Power semiconductor element 31 Partition (side wall of the case)
39 Ventilation hole 39b Communication portion 39b1 Opening portion of communication portion 39b2 Communication passage of communication portion 39b3 Inclined surface of communication passage (lower surface of upper wall)
41 Epoxy resin (resin)

Claims (6)

ケース（７）内に配置した半導体素子（２３）を樹脂（４１）でポッティングして封止する構造の半導体モジュール（１）であって、前記ケース（７）の側壁（５，３１）は、上下方向に延びる通気孔（３９）を備え、この通気孔（３９）の下部は、前記ケース（７）内の底部に連通していることを特徴とする半導体モジュール。   A semiconductor module (1) having a structure in which a semiconductor element (23) disposed in a case (7) is potted and sealed with a resin (41), and the side walls (5, 31) of the case (7) A semiconductor module comprising a vent hole (39) extending in the vertical direction, and a lower portion of the vent hole (39) communicating with a bottom portion in the case (7). 前記通気孔（３９）は前記ケース（７）の側壁（５，３１）に複数設けられ、この複数の通気孔（３９）の下部相互を連通する連通部（３９ｂ）が前記ケース（７）の側壁（５，３１）の下部に設けられ、前記連通部（３９ｂ）は、前記ケース（７）内の底部に開口して前記側壁（５，３１）の全周にわたり連続して形成されていることを特徴とする請求項１に記載の半導体モジュール。   A plurality of the vent holes (39) are provided on the side walls (5, 31) of the case (7), and a communication portion (39b) that communicates the lower portions of the plurality of vent holes (39) is provided on the case (7). Provided in the lower part of the side wall (5, 31), the communication part (39b) is continuously formed over the entire circumference of the side wall (5, 31) by opening at the bottom of the case (7). The semiconductor module according to claim 1. 前記連通部（３９ｂ）は、複数の通気孔（３９）の下部相互を連通する連通路（３９ｂ２）と、この連通路（３９ｂ２）より下方に位置して前記ケース（７）内の底部に開口する開口部（３９ｂ１）と、を有することを特徴とする請求項２に記載の半導体モジュール。   The communication part (39b) is located below the communication path (39b2) and communicates with the lower part of the plurality of vent holes (39), and is open at the bottom of the case (7). The semiconductor module according to claim 2, further comprising: an opening portion (39 b 1) to be formed. 前記連通路（３９ｂ２）内の上壁の下面（３９ｂ３）は、前記側壁（５，３１）の周方向に沿って互いに隣接する前記通気孔（３９）相互間の位置（Ｓ）に対し、前記通気孔（３９）側が上方となるよう傾斜していることを特徴とする請求項３に記載の半導体モジュール。   The lower surface (39b3) of the upper wall in the communication passage (39b2) is located at a position (S) between the vent holes (39) adjacent to each other along the circumferential direction of the side wall (5, 31). The semiconductor module according to claim 3, wherein the semiconductor module is inclined so that the air hole (39) side is upward. ケース（７）内に配置した半導体素子（２３）を樹脂（４１）でポッティングして封止する半導体モジュール（１）の製造方法であって、前記ケース（７）の側壁（５，３１）の内側の前記半導体素子（２３）が配置されている領域（９）に前記樹脂（４１）を注入する際に、前記ケース（７）の側壁（５，３１）に設けた通気孔（３９）を通して前記ケース（７）の側壁（５，３１）の内側の領域（９）内の空気を外部に逃がすことを特徴とする半導体モジュールの製造方法。   A method of manufacturing a semiconductor module (1) in which a semiconductor element (23) disposed in a case (7) is potted with a resin (41) and sealed, and the side walls (5, 31) of the case (7) are sealed. When the resin (41) is injected into the region (9) in which the semiconductor element (23) is disposed on the inner side, the air hole (39) provided in the side wall (5, 31) of the case (7) is passed through. A method of manufacturing a semiconductor module, characterized in that air in a region (9) inside a side wall (5, 31) of the case (7) is released to the outside. 前記ケース（７）の側壁（５，３１）に設けた前記通気孔（３９）の外部から空気を吸引することを特徴とする請求項５に記載の半導体モジュールの製造方法。   6. The method of manufacturing a semiconductor module according to claim 5, wherein air is sucked from the outside of the vent hole (39) provided in the side wall (5, 31) of the case (7).
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