TWI479615B - Semiconductor package and heat sink thereof - Google Patents

Description

Semiconductor package structure and heat sink

The present invention relates to a semiconductor package structure, and more particularly to a semiconductor package structure having a heat sink and a heat sink thereof.

In the heat dissipation technology of the current semiconductor package structure, a heat dissipating member is often disposed outside the structure to serve as a heat dissipation path by contacting the heat dissipating member with air, such as the semiconductor package structure 1 shown in FIG. 1 having a package substrate. 10. A semiconductor component 11 disposed on the package substrate 10, a heat sink 12 disposed on the package substrate 10 to cover the semiconductor component 11, and an encapsulant 13 covering the semiconductor component 11 and the side of the heat sink 12 . The heat dissipating member 12 has a central through hole 120 for filling the encapsulant 13 through the central through hole 120 to cover the semiconductor element 11 .

However, in the manufacturing method of the conventional semiconductor package structure 1, the encapsulant 13 covers the side of the heat dissipating member 12, so that a part of the area of the heat dissipating member 12 cannot be in contact with air, resulting in poor heat dissipation.

Moreover, by using the central through hole 120 as a glue filling route, the problem of overflowing the glue is likely to occur.

2A to 2B are schematic cross-sectional views showing a manufacturing method of the conventional semiconductor package structure 2. As shown in FIG. 2A, a semiconductor component 21 is disposed on a lead frame 20, and a heat sink 22 is disposed on the lead frame 20 to cover the semiconductor component 21. Next, a mold 24 is disposed to cover the lead frame. 20 and heat sink 22.

The heat dissipating member 22 has a central through hole 220 and a lower peripheral hole 221. The central through hole 220 is combined with the glue channel 243 of the mold 24 to form a funnel shape, so that the encapsulant 23 can pass through the central through line. The hole 220 is filled in the inner side of the heat sink 22 to cover the semiconductor element 21, and the filling can be completed uniformly and quickly, and the lower tip hole 221 can reduce the pressure in the mold during the filling. Furthermore, the mold 24 has three modules 240, 241, 242, and a gap is required between each of the modules 240, 241, 242 to discharge the gas in the encapsulant 23.

As shown in FIG. 2B, after the encapsulant 23 is formed to cover the semiconductor element 21, the mold 24 is removed. Since the encapsulant 23 is completely enclosed in the heat dissipating member 22, the outer side of the heat dissipating member 22 can be completely in contact with the air, thereby effectively dissipating heat.

However, in the manufacturing method of the conventional semiconductor package structure 2, since there is a gap between the respective modules 240, 241, 242, when the glue is applied, a problem of overflowing at the interface between the modules 240, 241, 242 occurs, so After demolding, there is residual glue K at the surface of the semiconductor package structure 2.

3A to 3B are schematic views of a conventional semiconductor package structure 3. The semiconductor package structure 3 includes a package substrate 30, a semiconductor component 31 disposed on the package substrate 30, a heat sink 32 disposed on the package substrate 30 to cover the semiconductor component 31, and a semiconductor component 31 and The encapsulant 33 on the side of the heat sink 32.

The central portion of the heat dissipating member 32 has a bowl-shaped hole 330, so that the encapsulant 33 is filled into the inner side of the heat dissipating member 32 via the bowl-shaped hole 330 to cover the semiconductor element 31, and four of the heat dissipating members 32 Corner with through hole When the package is encapsulated, the gas in the encapsulant 33 can escape from the through holes 331 to avoid a void phenomenon in the encapsulant 33.

However, in the manufacturing method of the conventional semiconductor package structure 3, the outer surface 320a of the hole of the bowl-shaped hole 330 is a flat curved surface, so that the encapsulant 33 will flow toward the through holes 331, so that the through holes are formed. 331 is easy to overflow, thus causing waste of the encapsulant 33.

Moreover, the encapsulant 33 covers the side of the heat sink 32, so that the void phenomenon cannot be completely eliminated, so that heat cannot be effectively dissipated.

4A to 4B are schematic cross-sectional views showing a method of fabricating the conventional semiconductor package structure 4. As shown in FIG. 4A, a semiconductor device 41 is disposed on a package substrate 40, and a heat dissipation member 42 is disposed on the package substrate 40 to cover the semiconductor device 41. The heat dissipation member 42 has a central upper hole 421. . Next, a mold 44 is disposed to cover the package substrate 40 and the heat sink 42 so that the encapsulant 43 is filled into the heat sink 42 from the side.

As shown in FIG. 4B, the encapsulant 43 covers the semiconductor element 41. When the side potting mold is pressed, the air in the encapsulant 43 can be discharged by the central upper sharp hole 421, and the popcorn effect can be prevented and the reliability of the package structure can be improved.

However, in the manufacturing method of the conventional semiconductor package structure 4, the potting efficiency is not good by the side potting method, and the pressure in the mold is uneven due to the design of the central upper sharp hole 421, and is easy to be on the center. A problem of overflowing the glue at the sharp hole 421 occurs.

Therefore, how to overcome the various problems of the above-mentioned prior art has become a problem that is currently being solved.

In view of the above-mentioned various deficiencies of the prior art, the present invention provides a heat dissipating member, comprising: a body having a lead passage, an opposite first surface and a second surface, the lead passage having a perforated and recessed structure, the perforation having a hole wall, a first hole end on the same side as the first surface, and a second hole end on the same side as the second surface, and the perforation causes the first and second surfaces to communicate with each other, and the recess structure A wall surrounding the hole of the perforation; and a support portion is disposed on the body and extends outward.

The present invention further provides a semiconductor package structure, comprising: a carrier; a semiconductor component disposed and electrically connected to the carrier; wherein the heat sink is disposed on the carrier with a support portion thereof An accommodating space is formed between the heat dissipating member and the carrier, so that the semiconductor component is located in the accommodating space, and the through hole and the recessed structure are connected to the accommodating space, and the first surface of the body and the through hole are The first hole end is away from the carrier, and the second surface of the body and the second hole end of the hole are close to the carrier; and the encapsulant is formed in the accommodating space and the recess structure to package The semiconductor component is covered.

In the above heat sink and semiconductor package structure, the support portion has a foot end for being placed on a bearing surface (or a carrier).

In the heat sink and the semiconductor package structure, the aperture of the first hole end is larger than the aperture of the second hole end.

In the above heat sink and the semiconductor package structure, the first hole end of the through hole protrudes from the first surface of the body, and the recess structure has an opening that communicates with the second surface of the body, and the bottom of the opening connects the hole First Around the end of the hole.

In the heat sink and the semiconductor package structure, the recessed structure is integral with the hole wall of the through hole, and the hole structure and the hole wall of the hole are stepped, meandered or curved.

In addition, in the heat dissipating member and the semiconductor package structure, the first hole end and the second hole end of the through hole respectively protrude from the first surface and the second surface, and one part of the recess structure has a second connection An opening of the surface, and the bottom of the opening is connected around the first hole end of the perforation, and the other part is integral with the hole wall of the perforation, and the hole structure and the hole wall of the perforation are stepped, meandered or Curved.

It can be seen from the above that the semiconductor package structure and the heat dissipating member thereof of the present invention are designed by using the guiding channel of the heat dissipating member to make the recessed structure act as a buffer colloid to suppress overflow and avoid the occurrence of the perforation. Overfilling problem.

The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. Technology disclosed by the invention The content can be covered. In the meantime, the terms "upper", "lower", "first", "second" and "one" are used in the description for convenience of description, and are not intended to limit the invention. Changes in the scope of implementation, changes or adjustments in their relative relationship, are considered to be within the scope of the present invention.

5A to 5B are schematic cross-sectional views showing the manufacturing method of the first embodiment of the semiconductor package structure 5 of the present invention.

As shown in FIG. 5A, a semiconductor component 51 is disposed on a carrier 50 and electrically connected to the carrier 50, and a heat sink 52 is coupled to the carrier 50 to cover the semiconductor component 51.

The heat dissipating member 52 has a main body 52a, a plurality of supporting portions 52b disposed at the edge of the main body 52a, and a guiding passage 52c disposed at the center of the main body 52a. The supporting portion 52b is coupled to the supporting member 50. An accommodating space S is formed between the body 52a and the carrier 50 such that the body 52a is located above the semiconductor component 51. The guiding passage 52c has a recessed structure 521 which penetrates the upper and lower through holes 520 and the outer surface of the hole wall 520c of the through hole 520. The through hole 520 and the recessed structure 521 both communicate with the receiving space S.

In this embodiment, the carrier 50 is a package substrate, other semiconductor components or lead frames, but is not limited thereto, and the semiconductor component 51 is electrically connected by a bonding wire 510 or a conductive bump (not shown). The carrier 50 is connected. The heat sink 52 may be made of copper, aluminum, alloy or other high thermal conductive material.

Furthermore, the guiding channel 52c is a convex body, and the through hole 520 has a first hole end 520a away from the carrier 50 and a second hole end 520b adjacent to the carrier 50, and the first hole end 520a The aperture is larger than the second The aperture of the hole end 520b.

Moreover, the first hole end 520a of the through hole 520 protrudes in a direction opposite to the carrier member 50 (ie, upwards), so that the guiding channel 52c protrudes from the surface of the body 52a (ie, protrudes in a direction opposite to the carrier member 50). The recessed structure 521 has an opening 521a in the direction of the carrier 50 so that the recessed structure 521 communicates with the accommodating space S, and the bottom 521b of the opening 521a is coupled around the first hole end 520a of the through hole 520. .

In addition, the support portion 52b has a foot end 523 for the support portion 52b to be placed on the carrier 50 by the foot end 523.

In other embodiments, the heat dissipating member 52 may not have the support portion 52b, that is, the supporting portion 52b may be replaced by other supporting structures, as long as the guiding channel 52c of the heat dissipating member 52 can be disposed above the semiconductor component 51. .

As shown in FIG. 5B, the encapsulant 53 is filled into the accommodating space S through the through hole 520 to cover the semiconductor element 51, and the encapsulant 53 is formed in the recess structure 521.

In the manufacturing method of the present invention, the design of the recessed structure 521 is used to avoid overflow. Specifically, when the encapsulation process is performed, the outer surface of the hole 520c of the through hole 520 (ie, the outer surface of the first hole end 520a) is coupled to the recess structure 521, so that the encapsulant 53 is filled to the lower surface of the body 52a. The encapsulant 53 will flow into the through hole 520 and will also be filled in the recess structure 521 to buffer the amount of overflow of the encapsulant 53. Therefore, although the encapsulant 53 is filled in the through hole 520, it is limited by the filling space of the recess structure 521, so that overflow of the perforation 520 can be avoided.

Furthermore, in the embodiment, the encapsulant 53 is in the through hole 520. The height h2 is lower than the height h1 of the encapsulation 53 at the recessed structure 521, and in other embodiments, the height h2 may be greater than or equal to the height h1. In addition, the material of the encapsulant 53 is epoxy resin.

Moreover, as shown in the fifth embodiment, in another embodiment, the body 52a of the heat dissipating member 52' has a convex portion 522, and the convex portion 522 can be formed at the edge of the body 52a (eg, Ring) or designed according to requirements. The encapsulant 53 is formed on the side of the heat dissipating member 52, that is, the supporting portion 52b is covered to avoid the influence of the encapsulating body 53 on the side of the upper side of the main body 52a. The heat dissipation effect of the body 52a.

Figure 6 is a cross-sectional view showing a second embodiment of the semiconductor package structure 6 of the present invention. The difference between this embodiment and the first embodiment lies only in the structure of the heat dissipating member, and other similar processes and structures will not be described again.

As shown in FIG. 6, the second hole end 620b of the through hole 620 of the lead-in channel 62c protrudes toward the carrier member 50 (ie, downwardly), so that the lead-in channel 62c is located in the accommodating space S, and the guide hole 62c is located in the accommodating space S. The recessed structure 621 is integral with the hole wall 620c of the through hole 620, and the recessed structure 621 and the hole wall 620c of the through hole 620 are stepped.

Moreover, the encapsulant 53 is filled into the accommodating space S and the recess structure 621 via the through hole 620 to cover the semiconductor element 51.

In another aspect, the recessed structure 621 and the hole wall 620c of the through hole 620 may also be curved or meandered, and the curved surface may be a curved surface or a sliding surface (ie, the bottom is a flat surface). .

In the manufacturing method of the present invention, the guiding channel 62c is located in the receiving portion. The design in the space S, and by the stepped structure (ie, the recessed structure 621) to increase the difficulty of overflowing, can effectively suppress the occurrence of overflow.

Moreover, in the embodiment, the height h2 of the encapsulant 53 in the through hole 620 is equal to the height h1 of the encapsulant 53 in the recess structure 621, and in other embodiments, the height h2 may be greater or less than This height is h1.

Figure 7 is a cross-sectional view showing a third embodiment of the semiconductor package structure 7 of the present invention. This embodiment combines the structures of the heat dissipating members of the first and second embodiments, and other similar processes and structures will not be described again.

As shown in FIG. 7, the first hole end 720a and the second hole end 720b of the through hole 720 of the lead passage 72c are respectively directed toward the carrier 50 (ie, facing downward) and opposite to the carrier 50 (ie, toward the direction of the carrier 50). Projecting, the one end of the guiding channel 72c is located in the accommodating space S, and the other end is convex on the surface of the body 72a (ie, protruding toward the bearing member 50), and a part of the recessed structure 721 The lower portion is integral with the hole wall 720c of the through hole 720, and the concave structure 721 and the hole wall 720c of the through hole 720 are stepped 721', zigzag or curved (not shown), and the other portion The upper portion has an opening 721a that communicates with the accommodating space S, and the bottom portion 721b of the opening 721a is connected around the first hole end 720a of the through hole 720.

In the manufacturing method of the present invention, the design of the recessed structure 721 of the lead-through channel 72c (ie, the opening 721a and the stepped shape 721') can effectively suppress the overflow of the glue, so that the filling efficiency is better and the working time is short, and There is no overflow problem.

Furthermore, in the embodiment, the encapsulant 53 is in the through hole 720. The height h2 is higher than the height h1 of the encapsulant 53 at the recessed structure 721, and in other embodiments, the height h2 may be less than or equal to the height h1.

The present invention provides a semiconductor package structure 5, 6, 7 comprising a carrier 50, a semiconductor component 51 disposed on the carrier 50, and a heat sink 52, 62 disposed on the carrier 50. 72. The encapsulant 53 encapsulating the semiconductor component 51.

The semiconductor component 51 is electrically connected to the carrier 50.

The heat dissipating member 52, 62, 72 is formed between the carrier member 50 and the receiving member 50 to form an accommodating space S. The semiconductor device 51 is located in the accommodating space S. The body 52a of the heat dissipating member 52, 62, 72 62a, 72a has a guiding channel 52c, 62c, 72c, and the guiding channel 52c, 62c, 72c has a through hole 520, 620, 720 and a recessed structure 521, 621, 721 connecting the receiving space S, the through hole 520, 620, 720 has a hole wall 520c, 620c , the 720c, away from the first hole end 520a, 620a, 720a of the carrier 50 and the second hole end 520b, 620b, 720b adjacent to the carrier 50, and the recessed structure 521, 621, 721 is connected to the hole wall 520c of the hole 520, 620, 720, The outer surface of the 620c, 720c is connected to the accommodating space S.

Furthermore, the heat dissipating members 52, 62, 72 have support portions 52b, 62b, 72b which are disposed at the edges of the bodies 52a, 62a, 72a and extend outward, and the support portions 52b, 62b, 72b are coupled to the load. The housing 50 is such that the receiving space S is formed between the body 52a, 62a, 72a and the carrier 50.

Moreover, the apertures of the first hole ends 520a, 620a, 720a are larger than the apertures of the second hole ends 520b, 620b, 720b.

The encapsulation 53 is formed in the accommodating space S and the recessed structures 521, 621, 721.

In an embodiment, the first hole end 520a of the through hole 520 protrudes in a direction opposite to the carrier member 50, so that the guiding channel 52c protrudes in a direction opposite to the carrier member 50, and the recessed structure 521 has The opening 521a of the accommodating space S is connected to the bottom 521b of the opening 521a and is connected around the first hole end 520a of the through hole 520.

In one embodiment, the second hole end 620b of the through hole 620 protrudes toward the carrier member 50, so that the guiding channel 62c is located in the accommodating space S, and the recessed structure 621 is connected to the hole wall of the through hole 620. The 620c is integrated, and the recessed structure 621 and the hole wall 620c of the through hole 620 are stepped, meandered, or curved.

In one embodiment, the first hole end 720a and the second hole end 720b of the through hole 720 are respectively protruded toward the carrier 50 and opposite to the bearing member 50, so that one end of the guiding channel 72c is located at the end. The space S is disposed, and the other end is protruded toward the bearing member 50, and a portion of the recessed structure 721 is integral with the hole wall 720c of the through hole 720, and the recessed structure 721 and the hole wall of the through hole 720 The 720c is stepped 721', zigzag or curved, and the other portion has an opening 721a that communicates with the accommodating space S, and the bottom 721b of the opening 721a is connected around the first hole end 720a of the through hole 720.

8A to 8C are schematic cross-sectional views showing different embodiments of the heat dissipating members 8, 8', 8" of the present invention. The heat dissipating members 8, 8', 8" include: a body 80 and at least one support Section 81.

The body 80 has a lead-in passage 82 and an opposite first surface 80a and second surface 80b.

The support portion 81 is disposed on the body 80 and extends outwardly, and has a leg end 813 for placing the support portion 81 on a bearing surface by the leg end 813. In this embodiment, the support portion 81 is protruded from the second surface 80b of the body 80. However, the position of the support portion 81 is not limited, so that the object 80 can be covered under the body 80 (such as a semiconductor component). Just fine.

The lead passages 82, 82', 82" have a through hole 820, 820', 820" and a recessed structure 821, 821', 821" having a hole wall 820c, 820c', 820c", a first hole end 820a, 820a', 820a" on the same side of the first surface 80a, and a second hole end 820b, 820b', 820b" on the same side as the second surface 80b, and the hole 820, 820', 820 The first and second surfaces 80a, 80b are interconnected, and the recessed structures 821, 821', 821" are connected to the perforations 820, 820', 820" around the hole walls 820c, 820c', 820c", and the first hole The aperture d of the end 820a, 820a', 820a" is greater than the aperture t of the second aperture end 820b, 820b', 820b".

In an embodiment, as shown in FIG. 8A, the first hole end 820a of the through hole 820 protrudes from the first surface 80a of the body 80, so that the lead channel 82 is protruded from the first surface 80a, and The recessed structure 821 has an opening 821a that communicates with the second surface 80b. The bottom 821b of the opening 821a is connected around the first hole end 820a of the through hole 820. The depth x of the recessed structure 821 corresponds to the relative height between the hole wall 820c of the through hole 820 and the body 80. For example, the height L1 of the body 80 is larger than the through hole. The height L2 of the second hole end 820b of 820. In other embodiments, the height L1 of the body 80 may also be less than or equal to the height L2 of the bottom end of the hole wall 820c of the through hole 820 (ie, the second hole end 820b).

In an embodiment, as shown in FIG. 8B, the hole wall 820c' of the through hole 820' is protruded from the second surface 80b, so that the guiding channel 82' is protruded from the second surface 80b, and the recess The structure 821' is integral with the hole wall 820c' of the through hole 820', and the hole structure 821' and the hole wall 820c' of the hole 820' are stepped, meandered or curved.

In an embodiment, as shown in FIG. 8C, the first hole end 820a" and the second hole end 820b" of the through hole 820" are respectively protruded from the first surface 80a and the second surface 80b, so that the One end of the guide passage 82" is protruded from the first surface 80a, and the other end is protruded from the second surface 80b, and one portion of the recessed structure 821" has an opening 821a that communicates with the second surface 80b, and the opening The bottom portion 821b of the 821a is joined around the first hole end 820a" of the through hole 820", and the other portion is integral with the hole wall 820c" of the through hole 820", and the recessed structure 821" and the hole wall 820c of the through hole 820"" It is stepped 821c, zigzag or curved.

In summary, the semiconductor package structure and the heat dissipating member thereof of the present invention mainly prevent a problem of overflowing around the perforation by a dish-like guiding channel formed in the center of the heat dissipating fin having a concave structure.

The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as follows. Listed around.

1,2,3,4,5,6,7‧‧‧ semiconductor package structure

10,30,40‧‧‧Package substrate

11,21,31,41,51‧‧‧ semiconductor components

12,22,32,42,52,52’,62,72‧‧‧

120,220‧‧‧Central through hole

13,23,33,43,53‧‧‧Package colloid

20‧‧‧ lead frame

221‧‧‧deep hole

24,44‧‧‧Mold

240,241,242‧‧‧Modular

243‧‧‧Gum filling road

330‧‧‧ Bowl Hole

330a‧‧‧ outer wall surface

331‧‧‧through hole

421‧‧‧ center sharp hole

50‧‧‧ Carrying parts

510‧‧‧welding line

52a, 52a’, 62a, 72a, 80‧‧‧ ontology

52b, 62b, 72b, 81‧‧ ‧ support

52c, 62c, 72c, 82, 82', 82" ‧ ‧ lead channel

520,620,720‧‧‧ perforation

520a, 620a, 720a‧‧‧ first hole end

520b, 620b, 720b‧‧‧ second hole end

520c, 620c, 720c‧‧‧ hole wall

521,621,721‧‧‧ recessed structure

521a, 721a, 821a‧‧‧ openings

521b, 721b, 821b‧‧‧ bottom

522‧‧‧ raised parts

523, 813 ‧ ‧ feet

721’, 821c‧‧‧ stepped

8,8’,8”‧‧‧Solder parts

80a‧‧‧ first surface

80b‧‧‧second surface

820, 820’, 820” ‧ ‧ perforation

820a, 820a’, 820a” ‧‧ first hole

820b, 820b’, 820b” ‧‧ second hole end

820c, 820c’, 820c” ‧‧ ‧ hole wall

821,821’,821”‧‧‧ recessed structure

H1, h2, L1, L2‧‧‧ height

d, t‧‧‧ aperture

K‧‧‧ Residue

S‧‧‧ accommodating space

X‧‧‧depth

1 is a cross-sectional view showing a conventional semiconductor package structure; FIGS. 2A to 2B are cross-sectional views showing a conventional semiconductor package structure; and FIG. 3A is a cross-sectional view showing a conventional semiconductor package structure; 3B is a perspective view of the heat sink of FIG. 3A; FIGS. 4A to 4B are schematic cross-sectional views showing the manufacturing method of the conventional semiconductor package structure; and FIGS. 5A to 5B are the first of the semiconductor package structure of the present invention; FIG. 5C is a schematic top view of a heat dissipating member according to another embodiment of the first embodiment of the semiconductor package structure of the present invention; FIG. 5D is a semiconductor package structure of the present invention FIG. 6 is a cross-sectional view showing a second embodiment of the semiconductor package structure of the present invention; and FIG. 7 is a semiconductor package of the present invention; A schematic cross-sectional view of a third embodiment of the structure; and Figures 8A through 8C are schematic cross-sectional views of different embodiments of the heat sink of the present invention.

8‧‧‧ Heat sink

80‧‧‧ body

80a‧‧‧ first surface

80b‧‧‧second surface

81‧‧‧Support

813‧‧‧ feet

82‧‧‧ lead channel

820‧‧‧Perforation

820a‧‧‧first hole end

820b‧‧‧second hole

820c‧‧‧ hole wall

821‧‧‧ recessed structure

821a‧‧‧ openings

821b‧‧‧ bottom

L1, L2‧‧‧ height

d, t‧‧‧ aperture

X‧‧‧depth

Claims (12)

A heat sink for a semiconductor package structure, comprising: a body having opposite first and second surfaces, and a lead passage having a perforated and recessed structure, the perforation having a hole wall, and the first a first hole end on the same side of the surface, and a second hole end on the same side as the second surface, and the through hole causes the first and second surfaces to communicate with each other, and the recessed structure connects the hole wall of the through hole Surrounding, wherein the first end of the perforation protrudes from the first surface of the body, or the second end of the perforation protrudes from the second surface of the body, or the first end of the perforation The second hole ends respectively protrude from the first surface and the second surface; and the support portion is coupled to the body and extends outward. The heat dissipating member according to claim 1, wherein the support portion has a foot end to be placed on a bearing surface. The heat sink of claim 1, wherein the first hole end has a larger aperture than the second hole end. The heat sink of claim 1, wherein the recessed structure has an opening that communicates with the second surface of the body when the first end of the through hole protrudes from the first surface of the body, and The bottom of the opening is joined around the first hole end of the perforation. The heat dissipating component of claim 1, wherein when the second hole end of the perforation protrudes from the second surface of the body, the recess structure is integral with the perforated hole wall, and the recess The structure and the perforated hole wall are stepped, meandered or curved. The heat dissipating member of claim 1, wherein when the first hole end and the second hole end of the perforation protrude from the first surface and the second surface respectively, one part of the concave structure is An opening that communicates with the second surface, and the bottom of the opening is connected around the first hole end of the through hole, and the other part is integral with the hole wall of the hole, and the hole structure and the hole wall of the hole are stepped , zigzag or curved. A semiconductor package structure comprising: a carrier; a semiconductor component disposed and electrically connected to the carrier; the heat sink according to claim 1 is provided on the carrier by a support portion thereof An accommodating space is formed between the heat dissipating member and the carrier, so that the semiconductor component is located in the accommodating space, and the through hole and the recessed structure are connected to the accommodating space, and the first surface of the body is The first end of the through hole is away from the carrier, and the second surface of the body is adjacent to the carrier with the second end of the through hole; and the encapsulant is formed in the receiving space and the recessed structure To cover the semiconductor component. The semiconductor package structure of claim 7, wherein the support portion has a foot end for being placed on the carrier. The semiconductor package structure of claim 7, wherein the first hole end has a larger aperture than the second hole end. The semiconductor package structure of claim 7, wherein When the first hole end of the through hole protrudes from the first surface of the body, the recess structure has an opening that communicates with the accommodating space, and the bottom of the opening is connected around the first hole end of the through hole. The semiconductor package structure of claim 7, wherein when the second hole end of the through hole protrudes from the second surface of the body, the recess structure is integral with the hole wall of the through hole, and The recessed structure and the perforated hole wall are stepped, meandered or curved. The semiconductor package structure of claim 7, wherein a portion of the recessed structure is formed when the first hole end and the second hole end of the through hole protrude from the first surface and the second surface, respectively The wall of the hole is integral with the hole of the perforation, and the wall of the hole and the hole of the hole is stepped, meandered or curved, and the other part has an opening connecting the receiving space, and the bottom of the opening is connected Around the first hole end of the perforation.