JP2014198861A - Vacuum evaporation system and vacuum deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum evaporation system and a vacuum deposition method, capable of reducing a useless vapor deposition material unused for vapor deposition on a substrate, or capable of controlling a film thickness by a simple mechanism.SOLUTION: In a vacuum evaporation system or a vacuum deposition method, a vapor distribution changing corresponding to the amount of a vapor deposition material in a crucible is blown out from a nozzle of an evaporation source 1, and the vapor deposition material is deposited onto a rotating substrate 2. The deposition amount of the vapor deposition material is detected by a film thickness sensor, and a distance L between a rotation center axis 2c of the substrate and a normal 10h of the nozzle parallel to the rotation center axis is changed based on the detection result.

Description

  The present invention relates to a vacuum vapor deposition apparatus and a vacuum vapor deposition method for emitting a material vapor to a large substrate when forming a thin film device such as an organic electroluminescence display (organic EL display) on a large substrate. Further, the present invention is not limited to the organic EL, and can be applied to other fields such as FPD, semiconductor, and solar cell.

  Among display devices, organic EL display devices are attracting attention as next-generation displays because they have not only a wide viewing angle but also good responsiveness. A light emitting element constituting an organic EL display is composed of a light emitting layer of an organic film sandwiched between both an anode and a cathode. In order to increase luminous efficiency, intermediate layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer are selectively inserted. These electrodes, light emitting layer and intermediate layer are thin films of several nm to several hundred nm. One technique for forming this thin film is vacuum vapor deposition (hereinafter referred to as vapor deposition).

  The vacuum deposition apparatus includes a crucible that encloses a deposition material, a heater that heats the crucible through a non-contact or partial member, a heat insulating material that is provided around the heater so as not to leak heat around the evaporation source, and the above elements It is comprised from the housing which accommodates. As this evaporation source, a Knudsen cell (hereinafter referred to as K cell) is often used. The K cell is generally cylindrical and often has one cylindrical crucible and one nozzle. When the K cell is arranged so that the nozzle is directly above, the substrate is arranged to face the nozzle.

  When depositing an organic layer or a metal layer serving as an electrode on a substrate, it is an important issue to make the thickness of the deposited film uniform. When vapor deposition is performed using one K cell, it is a common practice to obtain film thickness uniformity by rotating a substrate disposed on the upper surface. At that time, the rotation speed of the substrate is made as fast as possible so that there is no unevenness in the rotation direction. In order to ensure film thickness uniformity, the rotation axis of the substrate and the nozzle normal of the K cell are shifted from each other. The distance between the rotation axis of the substrate and the nozzle normal of the K cell is adjusted to ensure the film thickness uniformity of several percent required for each layer. However, in the K cell, the distribution of the material vapor radiated from the nozzle changes due to material consumption, so the optimum distance between the substrate rotation axis and the K cell nozzle normal changes with time, and the film thickness uniformity deteriorates. .

In Patent Document 1, a correction plate is placed between the K cell and the substrate to cut a part of the vapor distribution, thereby improving the film thickness uniformity.
In Patent Document 2, the distribution of material vapor is monitored by two film thickness sensors, and the film thickness uniformity is improved by adjusting the position of the evaporation source in accordance with the vapor distribution.

JP-A-5-339707 JP 2011-137187 A

Conventionally, a method of adjusting the film thickness distribution using a correction plate, which is described in Patent Document 1, has been taken. However, in the method of Patent Document 1, material utilization efficiency is deteriorated, and an expensive vapor deposition material is wasted.
In Patent Document 2, a material vapor distribution is acquired during vapor deposition, and the distance between the center of the substrate rotation axis and the nozzle normal is adjusted to prevent deterioration of film thickness uniformity due to a change in vapor distribution. However, there are two film thickness sensors for one evaporation source, the substrate to be deposited by a plurality of film thickness sensors must be controlled in a complicated manner, the apparatus configuration becomes large, and the film thickness can be controlled. It gets complicated.

  Accordingly, an object of the present invention is to provide a vacuum vapor deposition apparatus and a vacuum vapor deposition method that can reduce useless vapor deposition materials that are not used for vapor deposition of a substrate or that can control the film thickness with a simple mechanism.

In order to achieve the above object, the present invention has at least the following features.
The vacuum vapor deposition apparatus or the vacuum vapor deposition method of the present invention ejects a vapor distribution that changes according to the amount of the vapor deposition material in the crucible from the nozzle of the evaporation source, vapor deposits the vapor deposition material on the rotating substrate, The deposition amount of the deposition material is detected by a film thickness sensor, and the distance between the rotation center axis of the substrate and the normal line of the nozzle parallel to the rotation center axis is changed based on the detected result. And

In addition, one film thickness sensor may be provided, and the variation in the distance may be performed in a plane parallel to the substrate.
Further, the distance may be changed by rotating a rotary base on which the evaporation source is placed.

Further, the distance may be changed by rotating the rotating base at a constant rotational speed obtained from the relationship between the n value representing the vapor distribution and the distance.
Further, the distance may be changed by moving a pedestal on which the evaporation source is placed in two dimensions or one dimension.

Further, the one-dimensional or two-dimensional movement may be performed by moving the evaporation source in a direction toward the rotation center axis of the substrate.
Further, a plurality of the evaporation sources are provided concentrically around the rotation center of the rotation base or on the pedestals on both sides of the rotation center axis of the substrate, and the evaporation material of the evaporation source during the evaporation is less than a specified amount. In this case, it may be switched to another evaporation source.

  According to the present invention, it is possible to provide a vacuum vapor deposition apparatus and a vacuum vapor deposition method that can reduce useless vapor deposition materials that are not used for vapor deposition of a substrate or can control the film thickness with a simple mechanism.

It is a figure explaining the fundamental view of the present invention in the vapor deposition apparatus which is an embodiment. It is the relationship between the substrate center-nozzle normal distance, the vapor distribution of the evaporation source, and the film thickness distribution in the vapor deposition apparatus configuration in the present invention. It is a figure which shows the film thickness adjustment mechanism in a prior art example. It is a vapor deposition apparatus block diagram in this invention. It is a vapor deposition apparatus block diagram in case the moving means in this invention is a turntable. It is a top view of the structure of FIG. 3 in this invention. It is an apparatus block diagram explaining the film thickness uniformity improvement by a linear moving mechanism by the vapor deposition apparatus structure in this invention. It is an apparatus block diagram explaining the Example of evaporation source replacement | exchange by a turntable with the vapor deposition apparatus structure in this invention. It is an apparatus block diagram explaining the Example of material supply by the vapor deposition apparatus structure in this invention. It is an apparatus block diagram explaining the film thickness uniformity improvement and film thickness control method by a linear movement mechanism by the vapor deposition apparatus structure in this invention. It is an apparatus block diagram explaining the film thickness uniformity improvement and film thickness control method by a linear movement mechanism by the vapor deposition apparatus structure in this invention. FIG. 3 is a diagram in which a quasi-optimal value line indicated by a one-dot chain line for linearly moving the evaporation source 1 with respect to a change in n value is added to the graph shown in FIG. 2 along an optimal value curve indicated by a broken line.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a diagram illustrating a basic concept of the present invention in a vacuum vapor deposition apparatus (hereinafter simply referred to as a vapor deposition apparatus) 100 according to an embodiment.
The evaporation source 1 includes a crucible (not shown), a heater, a heat insulating material, and a housing. The evaporation source 1 includes a nozzle 10 that is an opening for discharging vapor. The material vapor 20 is discharged from the nozzle 10 with a vapor distribution. The material vapor 20 discharged from the nozzle is detected by one film thickness sensor 50, and the power supplied to the evaporation source 1 is controlled by the film thickness controller 70.

  The substrate 2 is placed so as to be deposited on the lower surface facing the nozzle 10. Since the distribution of the material vapor 20 spreads radially from the nozzle 10, the substrate rotation center axis 2c is shifted from the nozzle normal line 10h, and rotating the substrate 2 improves the film thickness distribution attached to the substrate. Yes.

  The substrate rotation drive system 80 is often installed above the substrate 2 as shown in FIG. The rotation speed of the substrate is accelerated to a sufficiently high speed so that the film thickness deposited on the substrate 2 does not become uneven. The distance between the substrate 2 and the nozzle 10 is determined in view of the size of the substrate 2 and the distribution of the material vapor 20 and the amount of heat given from the nozzle 10 to the substrate 2.

  Further, the evaporation source 1, the substrate 2, and the film thickness sensor 50 are housed in a vacuum chamber 60. For vapor deposition, the vacuum valve 61 is opened and the vacuum chamber 60 is placed in a vacuum environment by a vacuum exhaust system 62. Done on.

  The distribution of the material vapor 20 can be approximated by a function proportional to the nth power of cos θ, where θ is the angle in the scattering direction from the direction of the nozzle normal 10h. At this time, the vapor distribution is described with a constant value of n. The larger the n value, the sharper the vapor distribution, and the smaller the n value, the broader the vapor distribution. When vapor deposition is performed using a K cell, the n value generally decreases as the material decreases with time. As the n value decreases, the film thickness uniformity deteriorates.

  FIG. 2 is a diagram showing an example of the relationship between the n value on the substrate, the distance L between the substrate rotation center axis 2c and the nozzle normal 10h, and the film thickness distribution. FIG. 2 shows the n value on the substrate on the horizontal axis, the distance L between the substrate rotation center axis 2c and the nozzle normal 10h (hereinafter referred to as the distance between the substrate and the nozzle center) on the vertical axis, and the deviation of the film thickness distribution. A curve or a range formed by a curve is shown using a value (dispersion value) as a parameter. In FIG. 2, the broken line indicates the optimum value curve, the white background portion within the optimum value curve is within a deviation value (dispersion value) ± 5%, the dot portion is ± 5 to 10%, and the outer portion of the dot is ± 10 to 15%. Indicates within.

As shown in FIG. 2, in order to maintain the film thickness distribution deviation value (dispersion value) within a predetermined range as the n value on the substrate deteriorates (changes), that is, the vapor distribution becomes broader, the evaporation source 1 It turns out that it is impossible only by fixing the position of. Therefore, the substrate-nozzle center distance L shown on the vertical axis needs to be changed as the n value on the substrate deteriorates (changes).
Therefore, in the present invention, the evaporation source moving mechanism 30 that can change the distance L between the substrate and the nozzle center is provided. The control device 90 controls the evaporation source moving mechanism 30, the substrate rotation drive system 80, the vacuum exhaust system 62, and the like based on information from the film thickness controller 70.

The present invention has at least the following effects in the vapor deposition apparatus 100 according to the embodiment.
First, in Cited Document 1, in an evaporation source whose vapor distribution changes according to the amount of vapor deposition material in the crucible, the material vapor 20 is blocked by the film thickness correcting plate 9 as shown in FIG. I was trying to improve. On the other hand, in the present invention, the film thickness uniformity can be improved without deteriorating the material utilization efficiency by shortening the distance L between the substrate and the nozzle center as the n value on the substrate deteriorates (changes).

  Secondly, in Cited Document 2, in an evaporation source whose vapor distribution changes according to the amount of vapor deposition material in the crucible, a complicated calculation is performed using a complicated mechanism based on the results of the two film thickness sensors 50. The film thickness uniformity was improved. On the other hand, the present invention can improve the film thickness uniformity without complicated calculations using a simple mechanism that shortens the distance L between the substrate and the nozzle center as the n value on the substrate deteriorates (changes). .

  In the above description, the film thickness sensor 50 is assumed to be one. That is, in the present invention, the control amount is one of the distance L between the substrate and the nozzle center, and one observation amount is sufficient. However, it is not uncommon to provide a plurality of film thickness sensors 50 for checking the data of the film thickness sensors 50, controlling by taking an average value, or the like.

(Example 1)
FIG. 4 is a diagram showing a first embodiment 30A of the evaporation source moving mechanism 30. As shown in FIG. The evaporation source moving mechanism 30 </ b> A includes a pedestal 31 on which the evaporation source 1 is placed, and a two-dimensional moving mechanism 32 that moves the pedestal 31 in a plane parallel to the substrate 2. The two-dimensional moving mechanism 32 includes, for example, rails 32a and 32b that move the pedestal 31 parallel to two sides of the substrate that form a right angle, and a nut (not shown) fixed to the pedestal 31 and the rail 32a is rotated. It consists of a two-way moving mechanism that moves with a ball screw that does not.

  In order to improve the film thickness distribution as the n value decreases, the evaporation source 1 maintains the posture of the nozzle 10 toward the substrate 2 and freely moves to a predetermined position by the evaporation source moving mechanism 30A. I can do it. The movement is performed in such a direction that the distance L between the substrate and the nozzle center improves the film thickness distribution. The distance L between the substrate and the nozzle center for improving the film thickness distribution may be calculated by acquiring information on the film thickness sensor 50 or the like during the vapor deposition. The N value and the characteristics of the evaporation source may be evaluated in advance and input as data. Parameters that determine the evaporation characteristics of a certain evaporation source include the amount of remaining material in the crucible and the input power to the heater. When the configuration of the evaporation source is known, the N value and the deposition rate are determined in accordance with the amount of remaining material and the heater input power. Therefore, when the input power and the deposition rate are known, the N value, that is, the optimum substrate-nozzle center distance L can be obtained from the input power and the deposition rate. In this embodiment, since the data and the substrate / nozzle center distance L are in a one-to-one relationship, the N value and the characteristics of the evaporation source 1 can be evaluated in advance, and the above relationship can be input as data. In this case, the substrate / nozzle center distance L, which is a control amount, can be easily obtained without calculating. This is the same in other embodiments.

(Example 2)
FIG. 5 is a diagram showing a second embodiment 30B of the evaporation source moving mechanism 30. As shown in FIG. The evaporation source moving mechanism 30 </ b> B includes a disk-shaped rotatable rotating pedestal 31 </ b> B on which the evaporation source 1 is placed, and a rotation driving mechanism 33 that rotates the rotating pedestal 31 </ b> B in a plane parallel to the substrate 2. The rotation drive mechanism 33 has, for example, a drive source that rotates the rotation shaft 33c of the rotation base 31B directly or indirectly.

  In the second embodiment, the distance L between the substrate and the center of the nozzle is optimized by the rotational movement of the rotary base 31B.

FIG. 6 is a top view of FIG. 4 viewed from above the substrate 2. The substrate-nozzle center distance L is the distance La from the substrate rotation center axis 2c to the turntable rotation center 33c, the distance Lb from the turntable rotation center 33c to the nozzle normal line 10h, the substrate rotation center axis 2c, and the turntable. The angle φ formed by the rotation center 33c and the nozzle normal line 10h is determined by the equation (1).
L = 2La × Lb × Cosφ (1)
Therefore, La and Lb are fixed at the time of designing the apparatus, and if the substrate-nozzle center distance L is given, the angle of φ is also determined. It becomes a simple structure which can move the evaporation source 1 to a predetermined position by simple calculation.

Example 3
FIG. 7 is a diagram showing a third embodiment 30C of the evaporation source moving mechanism 30. As shown in FIG. The evaporation source moving mechanism 30 </ b> C includes a pedestal 31 on which the evaporation source 1 is placed and, for example, a rail 34 a that linearly moves the pedestal 31 so as to pass through the substrate rotation center axis 2 c in a plane parallel to the substrate 2. It is composed of a one-dimensional mobile mechanism 34. The rail 34a has the same mechanism as the rail 32a of the first embodiment, and the driving method is the same.

  If the rail 34a or an extension line of the rail 34a is installed so as to pass through the substrate rotation center axis 2c, the distance L between the substrate and the center of the nozzle can be adjusted with the minimum movement, the speed of the movement time etc. is improved, and the controllability of the movement You can improve.

  Of course, the moving direction of the one-way moving mechanism 34 may be parallel to the side of the substrate 2 as in the first embodiment, or may not be parallel to the side of the substrate 2, and the distance L between the substrate and the nozzle center is changed. Any direction is possible as long as it is possible. The same applies to Example 1 in that any direction is acceptable.

  With this configuration, the substrate-nozzle center distance L can be adjusted by linearly moving the evaporation source 1 mounted on the base 31 by the evaporation source moving mechanism 30C.

Example 4
FIG. 8 is a diagram illustrating a fourth embodiment that is a derivative example of the second embodiment. The fourth embodiment is different from the second embodiment in that a plurality of (two in FIG. 8) evaporation sources 1 are installed on the rotary base 31B, and the evaporation source moving mechanism 30B is the same mechanism. In Example 4, when the vapor deposition material of one evaporation source 1 runs out, it can use for vapor deposition for a long time by switching to another evaporation source 1 and using it.

  In the fourth embodiment, the rotating base 31B is used not only for improving the film thickness uniformity but also as a mechanism for operating for a long time. During vapor deposition, for example, the rotation base 31B is rotated at a low speed of several degrees or less per hour, and the evaporation source 1 is moved to a position where the film thickness distribution is improved. And when the vapor deposition material in the evaporation source 1 decreases, the rotation base 31B is rotated several tens of degrees to switch to another evaporation source. As a method for measuring the timing of switching to another evaporation source, the deposition rate detected by the film thickness sensor 50, the weight sensor for detecting the deposition material in the crucible, the amount of electric power supplied to the evaporation source 1 and the evaporation source 1 A value such as temperature may be monitored by selecting one item, for example.

This embodiment can be applied by providing a plurality of evaporation sources 1 on the pedestal of the first and third embodiments.
In that case, for example, a plurality of evaporation source moving mechanisms 30A or 30C may be provided on a concentric circle with the substrate rotation center axis 2c as the center. In the first embodiment, the pedestal 31 may be provided on the lower surface of the substrate 2, and the plurality of evaporation sources 1 may be provided on the pedestal.

(Example 5)
FIG. 9 is a diagram illustrating a fifth embodiment which is a derivative example of the fourth embodiment. In the fifth embodiment, a material input mechanism 40 for adding a vapor deposition material is added to the structure of the fourth embodiment shown in FIG. The material charging mechanism 40 is preferably installed so as to be charged into a crucible of the evaporation source 1 different from the evaporation source 1 during vapor deposition. This is because when a material is charged into the crucible during vapor deposition, it can be charged only in small amounts so that the rate of fluctuation in the temperature inside the crucible due to the material charging or a problem such as nozzle clogging does not occur. It is. By introducing the material into the evaporation source 1 that does not contribute to the vapor deposition, the vapor deposition material can be charged at a time without causing a rate fluctuation. The evaporation source into which the vapor deposition material is charged may be switched and used when the vapor deposition material of the evaporation source used is low. By adopting this method, even if the number of evaporation sources is two, vapor deposition can be performed without performing maintenance for a long time as long as the materials are charged.

Example 6
The sixth embodiment is a derivative example of the fourth embodiment. The difference of the sixth embodiment from the fourth embodiment is a method of measuring the timing for switching the evaporation source 1.

  In the fourth embodiment, the evaporation rate at which the evaporation source is switched is detected by the film thickness sensor 50, the weight sensor for detecting the evaporation material in the crucible, the amount of power supplied to the evaporation source 1, the temperature in the evaporation source 1, and the like. It was calculated from the data of one item.

  On the other hand, in Example 6, the amount of the remaining vapor deposition material in the crucible is calculated from both the vapor deposition rate detected by the film thickness sensor 50 and the electric energy supplied to the evaporation source 1. By calculating and setting the optimum rotation speed of the rotating base 31B that determines the distance L between the substrate and the nozzle center from the remaining material amount by converting the relationship between the remaining material amount in the crucible and the n value into data, By operating the vapor deposition apparatus for a long time, the film thickness uniformity can be improved.

(Example 7)
FIG. 10 is a diagram illustrating a seventh embodiment which is a derivative example of the third embodiment. 10, the film thickness sensor 50 is fixed to the pedestal 31 so that the positional relationship between the film thickness sensor 50 and the nozzle 10 does not change even when the evaporation source 1 moves from the configuration of the third embodiment shown in FIG. doing. Unlike the third embodiment, the evaporation source moving mechanism 30 </ b> C is provided in parallel with the side of the substrate 2.

  In Example 7, by fixing the positional relationship between the film thickness sensor 50 and the nozzle 10, it is not necessary to change the n-value conversion value of the deposition rate detected by the film thickness sensor 50 due to the position movement of the evaporation source 1. Calculation is simple and easy to control.

  This method can also be applied to Example 1, Example 2, and Example 4. In Example 4 shown in FIG. 8, it is preferable to provide a film thickness sensor 50 in each evaporation source 1.

(Example 8)
FIG. 11 is a diagram illustrating an eighth embodiment that is a derivative example of the third embodiment. In Example 7 shown in FIG. 10, the film thickness sensor 50 was fixed on the pedestal 31. In Example 8, it fixes to the structure in vacuum apparatuses other than the base 31, and if the evaporation source 1 moves, the positional relationship of the nozzle 10 and the film thickness sensor 50 will change. With such a configuration, when the amount of vapor deposition material in the crucible changes, the n value also changes, and when the input power to the crucible is controlled under the condition of a constant vapor deposition rate detected by the film thickness sensor 50, The input power to will change. However, under the condition that the deposition rate detected by the film thickness sensor 50 is constant, not the input power to the crucible but the distance L between the substrate rotation center and the nozzle normal is controlled so that the position of the film thickness sensor 50 is optimal. By installing at the position, the position of the evaporation source can be controlled to the optimum position by only one film thickness sensor 50. In the configuration of the eighth embodiment, the position of the film thickness sensor 50 is optimal for the n value change or when the evaporation source 1 is moved to a predetermined position, the deposition rate detected by the film thickness sensor 50 is always constant. A place that is desirable.

  The present embodiment can be applied to the first, second, and fourth embodiments as in the seventh embodiment.

Example 9
Finally, the movement control method of the evaporation source 1 in each embodiment will be described.
FIG. 12 is a diagram in which a quasi-optimum straight line indicated by a one-dot chain line for linearly moving the evaporation source 1 with respect to a change in n value is added to the graph shown in FIG. 2 along an optimal value curve indicated by a broken line. The relationship between the n value and the substrate / nozzle center distance L is a curve as can be seen from the optimum value curve and the boundary line with a film thickness uniformity of ± 5%. If the evaporation source 1 is to be moved linearly along this curve, the moving speed of the evaporation source 1 must be sequentially changed.

In Example 2, the evaporation source 1 shown in FIG. 5 is rotated from the position indicated by the broken line to the position indicated by the solid line counterclockwise at a constant speed. In this case, the center position of the rotary seat 31B and the rotation range of the evaporation source 1 are set so that the trajectory of the evaporation source 1 cancels the instability of the optimum value curve shown in FIG.
As a result, in Example 2, the evaporation source 1 can be moved along the optimum value curve or the approximate optimum value curve simply by moving the rotary seat 31B at a constant speed, and the film thickness uniformity can be ensured.

  On the other hand, in the case of Examples 1 and 3, when the evaporation source 1 is moved linearly, the movement along the optimum value curve cannot be realized, but the movement along the quasi-optimum value line can be realized by constant velocity motion. . In the case of the first embodiment, it is not possible to perform a constant velocity motion, but the position can be controlled so as to follow the optimum value curve.

  Although the embodiments of the present invention have been described above, various alternatives, modifications, and variations can be made by those skilled in the art based on the above description, and the present invention is not limited to the various embodiments described above without departing from the spirit of the present invention. It encompasses alternatives, modifications or variations.

1: evaporation source 2: substrate 2c: substrate rotation center axis 10: nozzle 10h: nozzle normal 20: material vapor 30, 30A, 30B, 30C: evaporation source moving mechanism 31: pedestal 31B: rotating pedestal 32: two-dimensional movement mechanism 32a, 32b, 32c: Rail 33: Rotation drive mechanism 34: One-dimensional movement mechanism 40: Material input mechanism 50: Film thickness sensor 60: Vacuum chamber 61: Vacuum valve 62: Vacuum exhaust system 70: Film thickness controller 80: Substrate Rotation drive system 90: Control device 100: Vacuum vapor deposition device (vapor deposition device)
L: Distance between substrate rotation center axis and nozzle normal (distance between substrate and nozzle center)

Claims (20)

An evaporation source for ejecting a vapor distribution varying according to the amount of the vapor deposition material in the crucible from the nozzle, and depositing the vapor deposition material on a rotating substrate;
A film thickness sensor for detecting a deposition amount of the deposition material;
An evaporation source moving mechanism that varies a distance between a rotation center axis of the substrate and a normal line of the nozzle parallel to the rotation center axis based on a detection result of the film thickness sensor;
A control device for controlling the evaporation source moving mechanism based on information from the film thickness sensor;
A vacuum evaporation apparatus characterized by comprising: The vacuum evaporation apparatus according to claim 1,
Having one film thickness sensor;
The vacuum evaporation apparatus characterized in that the evaporation source moving mechanism changes the distance in a plane parallel to the substrate. The vacuum evaporation apparatus according to claim 1 or 2,
The evaporation source moving mechanism includes a rotary pedestal on which the evaporation source can be placed and rotated, and a rotation driving unit that rotates the rotary pedestal. The vacuum evaporation apparatus according to claim 3, wherein
The vacuum deposition apparatus characterized in that the control device rotates the rotating pedestal at a rotation speed of the rotating pedestal determined so as to be constant from a relationship between a vapor distribution n value representing the vapor distribution and the distance. The vacuum evaporation apparatus according to claim 3 or 4,
The vacuum deposition apparatus, wherein the rotary base has a plurality of the evaporation sources concentrically around the rotation center of the rotary base. The vacuum evaporation apparatus according to claim 5,
The vacuum deposition apparatus, wherein the film thickness sensor is provided for a plurality of the evaporation sources. The vacuum evaporation apparatus according to claim 1 or 2,
The vacuum evaporation apparatus characterized in that the evaporation source moving mechanism has a pedestal on which the evaporation source is placed, and a one-dimensional driving means or a two-dimensional driving means for moving the pedestal two-dimensionally or one-dimensionally. The vacuum evaporation apparatus according to claim 7,
The one-dimensional moving unit or the two-dimensional driving unit is a driving unit that moves the evaporation source toward a rotation center axis of the substrate. The vacuum evaporation apparatus according to claim 7 or 8,
A vacuum evaporation system characterized in that pedestals are provided on both sides of the rotation center axis of the substrate, and each has the evaporation source and the thick film monitor. The vacuum evaporation apparatus according to claim 5 or 9,
A vacuum deposition apparatus, wherein the evaporation source is switched to another evaporation source when the evaporation material of the evaporation source during vapor deposition becomes a specified amount or less. The vacuum evaporation apparatus according to claim 10, wherein
At least one supply means for supplying the vapor deposition material to each of the evaporation sources;
The vacuum vapor deposition apparatus, wherein the supply means throws the vapor deposition material into another evaporation source. The vacuum evaporation apparatus according to claim 5 or 9,
The control device includes a vapor deposition rate of the vapor deposition material obtained from a detection result of the film thickness sensor, an electric energy supplied to the evaporation source, a weight sensor for detecting the vapor deposition material in the crucible, and a temperature in the evaporation source. The vacuum evaporation apparatus is characterized by switching to the other evaporation source based on at least one of them. The vacuum evaporation apparatus according to claim 3 or 7,
The film thickness sensor is provided in a structure of the vacuum evaporation apparatus other than the rotating pedestal or the pedestal. A vapor deposition step of ejecting a vapor distribution varying according to the amount of the vapor deposition material in the crucible from a nozzle of the evaporation source, and depositing the vapor deposition material on a rotating substrate;
A detection step of detecting a deposition amount of the deposition material with a film thickness sensor;
Based on the detection result of the detection step, a fluctuation step for changing the distance between the rotation center axis of the substrate and the normal line of the nozzle parallel to the rotation center axis;
A vacuum deposition method characterized by comprising: The vacuum deposition method according to claim 14,
The fluctuating step performs the fluctuating distance in a plane parallel to the substrate. The vacuum deposition method according to claim 14 or 15,
The variable evaporation step is performed by rotating a rotary base on which the evaporation source is placed. The vacuum deposition method according to claim 16,
The fluctuating step is performed by rotating the rotating pedestal at a constant rotational speed obtained from the relationship between the n value representing the vapor distribution and the distance. The vacuum deposition method according to claim 14 or 15,
A vacuum deposition method, wherein the fluctuating step is performed by moving a pedestal on which the evaporation source is placed two-dimensionally or one-dimensionally. The vacuum deposition method according to claim 18,
The one-dimensional or two-dimensional movement is performed by moving the evaporation source in a direction toward the rotation center axis of the substrate. The vacuum deposition method according to claim 16 or 17,
A plurality of the evaporation sources are provided concentrically around the rotation center of the rotation base or on the base on both sides of the rotation center axis of the substrate,
A vacuum deposition method, wherein the evaporation source is switched to another evaporation source when the vapor deposition material of the evaporation source during vapor deposition falls below a specified amount.

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