JP2014195040A - Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置 - Google Patents

Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置 Download PDF

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Publication number
JP2014195040A
JP2014195040A JP2013213701A JP2013213701A JP2014195040A JP 2014195040 A JP2014195040 A JP 2014195040A JP 2013213701 A JP2013213701 A JP 2013213701A JP 2013213701 A JP2013213701 A JP 2013213701A JP 2014195040 A JP2014195040 A JP 2014195040A
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Japan
Prior art keywords
led element
led
manufacturing
wafer
scribe
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Pending
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JP2013213701A
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English (en)
Japanese (ja)
Inventor
Fumiyoshi Nakatani
郁祥 中谷
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Mitsuboshi Diamond Industrial Co Ltd
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Mitsuboshi Diamond Industrial Co Ltd
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Priority to JP2013213701A priority Critical patent/JP2014195040A/ja
Publication of JP2014195040A publication Critical patent/JP2014195040A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2013213701A 2013-02-27 2013-10-11 Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置 Pending JP2014195040A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013213701A JP2014195040A (ja) 2013-02-27 2013-10-11 Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2013037367 2013-02-27
JP2013037368 2013-02-27
JP2013037369 2013-02-27
JP2013037370 2013-02-27
JP2013037368 2013-02-27
JP2013037369 2013-02-27
JP2013037367 2013-02-27
JP2013037370 2013-02-27
JP2013213701A JP2014195040A (ja) 2013-02-27 2013-10-11 Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置

Publications (1)

Publication Number Publication Date
JP2014195040A true JP2014195040A (ja) 2014-10-09

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Family Applications (1)

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JP2013213701A Pending JP2014195040A (ja) 2013-02-27 2013-10-11 Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置

Country Status (4)

Country Link
JP (1) JP2014195040A (zh)
KR (1) KR20140107121A (zh)
CN (1) CN104009129A (zh)
TW (1) TW201436017A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160051552A (ko) 2014-10-31 2016-05-11 미쓰보시 다이야몬도 고교 가부시키가이샤 브레이크 장치, 브레이크 장치로의 브레이크날의 부착 방법 및, 브레이크날용 카트리지
KR20160051554A (ko) 2014-10-31 2016-05-11 미쓰보시 다이야몬도 고교 가부시키가이샤 브레이크 장치

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109148559A (zh) * 2017-06-28 2019-01-04 矽创电子股份有限公司 晶圆结构
CN107946284B (zh) * 2017-11-03 2021-11-02 马鞍山太时芯光科技有限公司 一种led芯片切割道标识及其制作方法
CN111384200A (zh) * 2018-12-28 2020-07-07 北京铂阳顶荣光伏科技有限公司 一种太阳能电池的制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169715A (ja) * 1993-10-21 1995-07-04 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体チップの製造方法
JP2002192368A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工装置
JP2004259846A (ja) * 2003-02-25 2004-09-16 Ogura Jewel Ind Co Ltd 基板上形成素子の分離方法
JP2005166728A (ja) * 2003-11-28 2005-06-23 Mitsubishi Cable Ind Ltd 窒化物系半導体素子の製造方法
JP2010225787A (ja) * 2009-03-23 2010-10-07 Yamaguchi Univ サファイア基板の製造方法、および半導体装置
CN101908505A (zh) * 2010-06-24 2010-12-08 上海蓝光科技有限公司 一种发光二极管芯片的制造方法
WO2011090024A1 (ja) * 2010-01-19 2011-07-28 シャープ株式会社 機能素子およびその製造方法
US20120175652A1 (en) * 2011-01-06 2012-07-12 Electro Scientific Industries, Inc. Method and apparatus for improved singulation of light emitting devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1756857B1 (en) * 2004-06-11 2013-08-14 Showa Denko K.K. Production method of compound semiconductor device wafer
US9138913B2 (en) * 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
JP5060880B2 (ja) * 2007-09-11 2012-10-31 三星ダイヤモンド工業株式会社 脆性材料基板の分断装置および分断方法
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
CN102569543B (zh) * 2010-12-30 2015-09-02 比亚迪股份有限公司 一种发光二极管芯片的制作方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169715A (ja) * 1993-10-21 1995-07-04 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体チップの製造方法
JP2002192368A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工装置
JP2004259846A (ja) * 2003-02-25 2004-09-16 Ogura Jewel Ind Co Ltd 基板上形成素子の分離方法
JP2005166728A (ja) * 2003-11-28 2005-06-23 Mitsubishi Cable Ind Ltd 窒化物系半導体素子の製造方法
JP2010225787A (ja) * 2009-03-23 2010-10-07 Yamaguchi Univ サファイア基板の製造方法、および半導体装置
WO2011090024A1 (ja) * 2010-01-19 2011-07-28 シャープ株式会社 機能素子およびその製造方法
CN101908505A (zh) * 2010-06-24 2010-12-08 上海蓝光科技有限公司 一种发光二极管芯片的制造方法
US20120175652A1 (en) * 2011-01-06 2012-07-12 Electro Scientific Industries, Inc. Method and apparatus for improved singulation of light emitting devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160051552A (ko) 2014-10-31 2016-05-11 미쓰보시 다이야몬도 고교 가부시키가이샤 브레이크 장치, 브레이크 장치로의 브레이크날의 부착 방법 및, 브레이크날용 카트리지
KR20160051554A (ko) 2014-10-31 2016-05-11 미쓰보시 다이야몬도 고교 가부시키가이샤 브레이크 장치

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KR20140107121A (ko) 2014-09-04
TW201436017A (zh) 2014-09-16
CN104009129A (zh) 2014-08-27

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