JP2014179587A - 多相電力段用のリードフレームアイランドを備えたパワー・カッド・フラット・ノーリード(pqfn)半導体パッケージ - Google Patents
多相電力段用のリードフレームアイランドを備えたパワー・カッド・フラット・ノーリード(pqfn)半導体パッケージ Download PDFInfo
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Abstract
【解決手段】PQFNパッケージ100はリードフレームの第1及び第2のリードフレームアイランドの上に各々置かれたU相出力ノード110a、V相出力ノード110b、及びW相ダイパッドの上に置かれたW相出力ノード110cを含む。前記第1及び第2のリードフレームアイランドは各々第1、第2のリードフレームストリップ上にあり、各々U相ダイパッド、V相ダイパッドに接続されている。第1のW相パワースイッチ108aが前記W相ダイパッドの上に置かれる。更に、少なくとも1つのワイヤボンドが前記W相ダイパッドと第2のW相パワースイッチ108bのソースとに接続される。前記W相ダイパッドをPQFNパッケージ100のW相出力端子112qとすることができる。
【選択図】図1A
Description
本明細書で使用される、用語「III−V族」は少なくとも1つのIII族元素と少なくとも1つのV族元素を含む化合物半導体を意味する。例えば、III−V族半導体は、III族窒化物半導体の形を取り得る。「III族窒化物」又は「III−N」は窒素とアルミニウム(Al)、ガリウム(Ga)、インジウム(In)及びボロン(B)などの少なくとも1つのIII族元素を含む化合物半導体を意味し、例えば窒化アルミニウムガリウム(AlxGa(1-x)N、窒化インジウムガリウムInyGa(1-y)N、窒化アルミニウムインジウムガリウムAlxInyGa(1-x-y)N、砒化リン化窒化ガリウム(GaAsaPbN(1-a-b))、砒化リン化窒化アルミニウムインジウムガリウム(AlxInyGa(1-x-y)AsaPbN(1-a-b))などの合金を含むが、これらに限定されない。また、III族窒化物は一般に、Ga極性、N極性、半極性又は非極性結晶方位などの任意の極性を有するが、これらに限定されない。また、III族窒化物材料は、ウルツ鉱型、閃亜鉛鉱型、あるいは混合ポリタイプ(結晶多形)のいずれかを含むことができ、単結晶又はモノクリスタル、多結晶、または非結晶の結晶構造を含むことができる。本明細書で使用される、「窒化ガリウム」、「GaN」はIII族窒化物化合物半導体を意味し、III族元素は若干量又は相当量のガリウムを含むが、ガリウムに加えて他のIII族元素も含むことができる。また、III−V族又はGaNトランジスタはIII−V族又はGaNトランジスタを低電圧IV族トランジスタとカスコード接続することによって形成される複合高電圧エンハンスメントモードトランジスタも指す。
Claims (20)
- リードフレームの第1のリードフレームアイランドの上に置かれたU相出力ノードと、
前記リードフレームの第2のリードフレームアイランドの上に置かれたV相出力ノードと、
前記リードフレームのW相ダイパッドの上に置かれたW相出力ノードと、
を備える、パワー・カッド・フラット・ノーリード(PQFN)パッケージ。 - 前記W相ダイパッドの上に置かれた第1のW相パワースイッチを備える、請求項1記載のPQFNパッケージ。
- 前記W相ダイパッドに接続された少なくとも1つのワイヤボンドを備える、請求項1記載のPQFNパッケージ。
- 第2のW相パワースイッチのソースを前記W相ダイパッドに接続する少なくとも1つのワイヤボンドを備える、請求項1記載のPQFNパッケージ。
- 前記リードフレームの前記第1のリードフレームアイランドに接続された少なくとも1つのワイヤボンドを備える、請求項1記載のPQFNパッケージ。
- 前記リードフレームの前記第2のリードフレームアイランドに接続された少なくとも1つのワイヤボンドを備える、請求項1記載のPQFNパッケージ。
- 前記第1のリードフレームアイランドが前記PQFNパッケージの背面で露出している、請求項1記載のPQFNパッケージ。
- 前記第2のリードフレームアイランドが前記PQFNパッケージの背面で露出している、請求項1記載のPQFNパッケージ。
- 前記W相ダイパッドは前記PQFNパッケージのW相出力端子である、請求項1記載のPQFNパッケージ。
- 前記第1のリードフレームアイランドは前記リードフレームの第1のリードフレームストリップの上にあり、前記第1のリードフレームストリップは前記リードフレームのU相ダイパッドに接続されている、請求項1記載のPQFNパッケージ。
- 前記第2のリードフレームアイランドは前記リードフレームの第2のリードフレームストリップの上にあり、前記第2のリードフレームストリップは前記リードフレームのV相ダイパッドに接続されている、請求項1記載のPQFNパッケージ。
- 前記リードフレームのU相ダイパッドの上に置かれた第1のU相パワースイッチ及び前記リードフレームのV相ダイパッドの上に置かれた第1のV相パワースイッチを備える、請求項1記載のPQFNパッケージ。
- 前記リードフレームの共通ダイパッドの上に置かれた第2のU相パワースイッチ、第2のV相パワースイッチ及び第2のW相パワースイッチを備える、請求項1記載のPQFNパッケージ。
- 前記U相、V相及びW相パワースイッチはIII−V族トランジスタを備える、請求項1記載のPQFNパッケージ。
- 前記PQFNパッケージは12mm×12mmより大きいフットプリントを有する、請求項1記載のPQFNパッケージ。
- 前記PQFNパッケージは12mm×12mmより小さいフットプリントを有する、請求項1記載のPQFNパッケージ。
- リードフレームのU相ダイパッドに接続された第1のリードフレームストリップの上に置かれたU相出力ノードと、
前記リードフレームのV相ダイパッドに接続された第2のリードフレームストリップの上に置かれたV相出力ノードと、
前記リードフレームのW相ダイパッドの上に置かれたW相出力ノードと、
を備える、パワー・カッド・フラット・ノーリード(PQFN)パッケージ。 - 前記W相ダイパッドの上に置かれた第1のW相パワースイッチを備える、請求項17記載のPQFNパッケージ。
- 前記W相ダイパッドは前記PQFNパッケージのW相出力端子である、請求項17記載のPQFNパッケージ。
- 前記W相ダイパッドに接続された少なくとも1つのワイヤボンドを備える、請求項17記載のPQFNパッケージ。
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US14/102,316 US9362215B2 (en) | 2010-12-13 | 2013-12-10 | Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter |
US14/102,316 | 2013-12-10 |
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JP2001135765A (ja) * | 1999-11-05 | 2001-05-18 | Hitachi Cable Ltd | 複合リードフレームの製造方法および製造装置 |
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JP2012129489A (ja) * | 2010-12-13 | 2012-07-05 | Internatl Rectifier Corp | 電気的相互接続のためにリードフレームを用いるマルチチップモジュール(mcm)パワー・カッド・フラット・ノーリード(pqfn)半導体パッケージ |
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US20120256193A1 (en) * | 2011-04-08 | 2012-10-11 | Intersil Americas Inc. | Monolithic integrated capacitors for high-efficiency power converters |
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JP2001135765A (ja) * | 1999-11-05 | 2001-05-18 | Hitachi Cable Ltd | 複合リードフレームの製造方法および製造装置 |
US20060043545A1 (en) * | 2004-09-02 | 2006-03-02 | International Rectifier Corp. | SMT three phase inverter package and lead frame |
JP2011029262A (ja) * | 2009-07-22 | 2011-02-10 | Daikin Industries Ltd | 電力変換装置 |
JP2012129489A (ja) * | 2010-12-13 | 2012-07-05 | Internatl Rectifier Corp | 電気的相互接続のためにリードフレームを用いるマルチチップモジュール(mcm)パワー・カッド・フラット・ノーリード(pqfn)半導体パッケージ |
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JP6200820B2 (ja) | 2017-09-20 |
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