JP6259675B2 - 共通集積回路(ic)上にブートストラップダイオードを有するパワー・カッド・フラット・ノーリード(pqfn)パッケージ - Google Patents
共通集積回路(ic)上にブートストラップダイオードを有するパワー・カッド・フラット・ノーリード(pqfn)パッケージ Download PDFInfo
- Publication number
- JP6259675B2 JP6259675B2 JP2014024443A JP2014024443A JP6259675B2 JP 6259675 B2 JP6259675 B2 JP 6259675B2 JP 2014024443 A JP2014024443 A JP 2014024443A JP 2014024443 A JP2014024443 A JP 2014024443A JP 6259675 B2 JP6259675 B2 JP 6259675B2
- Authority
- JP
- Japan
- Prior art keywords
- phase
- power switch
- driver
- lead frame
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 13
- 102100027206 CD2 antigen cytoplasmic tail-binding protein 2 Human genes 0.000 description 12
- 101100181929 Caenorhabditis elegans lin-3 gene Proteins 0.000 description 12
- 101000914505 Homo sapiens CD2 antigen cytoplasmic tail-binding protein 2 Proteins 0.000 description 12
- 101000922137 Homo sapiens Peripheral plasma membrane protein CASK Proteins 0.000 description 12
- 101000739160 Homo sapiens Secretoglobin family 3A member 1 Proteins 0.000 description 12
- 102100031166 Peripheral plasma membrane protein CASK Human genes 0.000 description 12
- 102100037268 Secretoglobin family 3A member 1 Human genes 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910021480 group 4 element Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Inverter Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
本明細書で使用される、用語「III−V族」は少なくとも1つのIII族元素と少なくとも1つのV族元素を含む化合物半導体を意味する。例えば、III−V族半導体は、III族窒化物半導体の形を取り得る。「III族窒化物」又は「III−N」は窒素とアルミニウム(Al)、ガリウム(Ga)、インジウム(In)及びボロン(B)などの少なくとも1つのIII族元素を含む化合物半導体を意味し、例えば窒化アルミニウムガリウム(AlxGa(1−x)N、窒化インジウムガリウムInyGa(1−y)N、窒化アルミニウムインジウムガリウムAlxInyGa(1−x−y)N、砒化リン化窒化ガリウム(GaAsaPbN(1−a−b))、砒化リン化窒化アルミニウムインジウムガリウム(AlxInyGa(1−x−y)AsaPbN(1−a−b))などの合金を含むが、これらに限定されない。また、III族窒化物は一般に、Ga極性、N極性、半極性又は非極性結晶方位などの任意の極性を有するが、これらに限定されない。また、III族窒化物材料は、ウルツ鉱型、閃亜鉛鉱型、あるいは混合ポリタイプ(結晶多形)のいずれかを含むことができ、単結晶又はモノクリスタル、多結晶、または非結晶の結晶構造を含むことができる。本明細書で使用される、「窒化ガリウム」、「GaN」はIII族窒化物化合物半導体を意味し、III族元素は若干量又は相当量のガリウムを含むが、ガリウムに加えて他のIII族元素も含むことができる。また、III−V族又はGaNトランジスタはIII−V族又はGaNトランジスタを低電圧IV族トランジスタとカスコード接続することによって形成される複合高電圧エンハンスメントモードトランジスタも意味する。
Claims (11)
- リードフレームの上に置かれた少なくとも第1と第2のインバータを含む多相インバータであって、前記第1と第2のインバータは、共通ダイパッドの上に置かれた第1の高圧側パワースイッチ及び第2の高圧側パワースイッチと、第1のダイパッドの上に置かれた第1の低圧側パワースイッチと、第2のダイパッドの上に置かれた第2の低圧側パワースイッチとを有する、多相インバータと、
前記リードフレームの上に置かれた共通集積回路(IC)であって、前記多相インバータを駆動するように構成されたドライバと、前記ドライバにそれぞれ結合された複数のブートストラップダイオードとを含む、前記共通集積回路(IC)と、
前記第1の高圧側パワースイッチとワイヤボンドで接続され、前記第1のダイパッドと電気的に接続されて、前記第1のインバータの出力ノードとなる第1のリードフレームアイランドと、
前記第2の高圧側パワースイッチとワイヤボンドで接続され、前記第2のダイパッドと電気的に接続されて、前記第2のインバータの出力ノードとなる第2のリードフレームアイランドと、
を備えた、パワー・カッド・フラット・ノーリード(PQFN)パッケージであって、
前記ドライバの第1のドライバは、前記第1のインバータの出力ノードにワイヤボンドで結合され、前記ドライバの第2のドライバは、前記第2のインバータの出力ノードにワイヤボンドで結合され、
少なくとも前記第1のリードフレームアイランドは前記PQFNパッケージ内でモールドコンパウンドによって分離されており、前記PQFNパッケージが装着されるプリント回路板(PCB)上のトラックを経て前記第1のダイパッドに接続されるように構成され、
前記多相インバータはIII−V族パワースイッチを備え、
前記III−V族パワースイッチは、III−V族トランジスタをIV族トランジスタとカスコード接続することによって構成された複合トランジスタを備える、
パワー・カッド・フラット・ノーリード(PQFN)パッケージ。 - 前記III−V族パワースイッチは、前記多相インバータの高圧側パワースイッチを備え、
前記ドライバは高圧側ドライバであって、前記多相インバータの前記高圧側パワースイッチに結合されている、請求項1記載のPQFNパッケージ。 - 前記ブートストラップダイオードは前記PQFNパッケージの供給電圧端子に結合されている、請求項1記載のPQFNパッケージ。
- 前記共通ICを前記PQFNパッケージのブートストラップ供給電圧端子に結合するワイヤボンドを備える、請求項1記載のPQFNパッケージ。
- 前記PQFNパッケージは12mm×12mmより大きいフットプリントを有する、請求項1記載のPQFNパッケージ。
- 前記PQFNパッケージは12mm×12mmより小さいフットプリントを有する、請求項1記載のPQFNパッケージ。
- リードフレームの上に置かれた少なくとも第1と第2のインバータを含む多相インバータであって、前記第1と第2のインバータは、共通ダイパッドの上に置かれた第1の高圧側パワースイッチ及び第2の高圧側パワースイッチと、第1のダイパッドの上に置かれた第1の低圧側パワースイッチと、第2のダイパッドの上に置かれた第2の低圧側パワースイッチとを有する、多相インバータと、
前記リードフレームの上に置かれ且つ前記多相インバータを駆動するように構成されたドライバ集積回路(IC)と、
前記ドライバ集積回路(IC)に含まれ、それぞれのブートストラップキャパシタに接続するよう構成された複数のブートストラップダイオードと、
前記第1の高圧側パワースイッチとワイヤボンドで接続され、前記第1のダイパッドと電気的に接続されて、前記第1のインバータの出力ノードとなる第1のリードフレームアイランドと、
前記第2の高圧側パワースイッチとワイヤボンドで接続され、前記第2のダイパッドと電気的に接続されて、前記第2のインバータの出力ノードとなる第2のリードフレームアイランドと、
を備えた、パワー・カッド・フラット・ノーリード(PQFN)パッケージであって、
前記ブートストラップキャパシタの第1のブートストラップキャパシタは、前記第1のインバータの出力ノードに結合され、前記ブートストラップキャパシタの第2のブートストラップキャパシタは、前記第2のインバータの出力ノードに結合され、
少なくとも前記第1のリードフレームアイランドは前記PQFNパッケージ内でモールドコンパウンドによって分離されており、前記PQFNパッケージが装着されるプリント回路板(PCB)上のトラックを経て前記第1のダイパッドに接続されるように構成され、
前記多相インバータはIII−V族パワースイッチを備え、
前記III−V族パワースイッチは、III−V族トランジスタをIV族トランジスタとカスコード接続することによって構成された複合トランジスタを備える、
パワー・カッド・フラット・ノーリード(PQFN)パッケージ。 - 前記III−V族パワースイッチは、前記多相インバータの高圧側パワースイッチを備え、
前記ドライバICは前記多相インバータの前記高圧側パワースイッチを駆動するように構成されている、請求項7記載のPQFNパッケージ。 - 前記ブートストラップダイオードは前記PQFNパッケージの供給電圧端子に結合されている、請求項7記載のPQFNパッケージ。
- 前記ドライバICを前記PQFNパッケージのブートストラップ供給電圧端子に結合するワイヤボンドを備える、請求項7記載のPQFNパッケージ。
- リードフレームの共通ダイパッドの上に置かれた第1のU相パワースイッチ、第1のV相パワースイッチ及び第1のW相パワースイッチと、
前記リードフレームのU相ダイパッドの上に置かれた第2のU相パワースイッチと、
前記リードフレームのV相ダイパッドの上に置かれた第2のV相パワースイッチと、
前記リードフレームのW相ダイパッドの上に置かれた第2のW相パワースイッチと、
前記リードフレームの上に置かれた共通集積回路(IC)であって、前記第1のU相、V相及びW相パワースイッチの各ゲートにそれぞれ結合されたU相、V相及びW相ドライバと、前記U相、V相及びW相ドライバにそれぞれ結合されたU相,V相及びW相ブートストラップダイオードと、を含む共通集積回路(IC)と、
前記第1のU相パワースイッチとワイヤボンドで接続され、前記U相ダイパッドと電気的に接続されて、U相出力ノードとなる第1のリードフレームアイランドと、
前記第1のV相パワースイッチとワイヤボンドで接続され、前記V相ダイパッドと電気的に接続されて、V相出力ノードとなる第2のリードフレームアイランドと、
前記第1のW相パワースイッチと前記W相ダイパッドとを直接接続し、前記第1のW相パワースイッチの電極及び前記W相ダイパッドをW相出力ノードとするワイヤボンドと、
を備えた、パワー・カッド・フラット・ノーリード(PQFN)パッケージであって、
前記U相ドライバは前記U相出力ノードにワイヤボンドで結合され、前記V相ドライバは前記V相出力ノードにワイヤボンドで結合され、前記W相ドライバは前記W相出力ノードにワイヤボンドで結合され、
少なくとも前記第2のリードフレームアイランドは前記PQFNパッケージ内でモールドコンパウンドによって分離されており、前記PQFNパッケージが装着されるプリント回路板(PCB)上のトラックを経て前記V相ダイパッドに接続されるように構成され、
前記第1のU相、V相及びW相パワースイッチはIII−V族パワースイッチを備え、
前記III−V族パワースイッチは、III−V族トランジスタをIV族トランジスタとカスコード接続することによって構成された複合トランジスタを備える、
パワー・カッド・フラット・ノーリード(PQFN)パッケージ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361774541P | 2013-03-07 | 2013-03-07 | |
US61/774,541 | 2013-03-07 | ||
US14/140,285 | 2013-12-24 | ||
US14/140,285 US9443795B2 (en) | 2010-12-13 | 2013-12-24 | Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC) |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014175654A JP2014175654A (ja) | 2014-09-22 |
JP6259675B2 true JP6259675B2 (ja) | 2018-01-10 |
Family
ID=50030205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014024443A Active JP6259675B2 (ja) | 2013-03-07 | 2014-02-12 | 共通集積回路(ic)上にブートストラップダイオードを有するパワー・カッド・フラット・ノーリード(pqfn)パッケージ |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2775521A3 (ja) |
JP (1) | JP6259675B2 (ja) |
TW (1) | TWI570878B (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4645313B2 (ja) * | 2005-06-14 | 2011-03-09 | 富士電機システムズ株式会社 | 半導体装置 |
US8587101B2 (en) * | 2010-12-13 | 2013-11-19 | International Rectifier Corporation | Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections |
US9859882B2 (en) * | 2011-03-21 | 2018-01-02 | Infineon Technologies Americas Corp. | High voltage composite semiconductor device with protection for a low voltage device |
JP5757145B2 (ja) * | 2011-04-19 | 2015-07-29 | 富士電機株式会社 | 半導体装置 |
-
2014
- 2014-02-04 EP EP14153858.7A patent/EP2775521A3/en not_active Withdrawn
- 2014-02-12 JP JP2014024443A patent/JP6259675B2/ja active Active
- 2014-02-13 TW TW103104737A patent/TWI570878B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201501266A (zh) | 2015-01-01 |
JP2014175654A (ja) | 2014-09-22 |
TWI570878B (zh) | 2017-02-11 |
EP2775521A2 (en) | 2014-09-10 |
EP2775521A3 (en) | 2017-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10438876B2 (en) | Power quad flat no-lead (PQFN) package in a single shunt inverter circuit | |
US9583477B2 (en) | Stacked half-bridge package | |
EP2477222B1 (en) | Stacked half-bridge package with a current carrying layer | |
US9443795B2 (en) | Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC) | |
US9362215B2 (en) | Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter | |
US9324646B2 (en) | Open source power quad flat no-lead (PQFN) package | |
EP2775520B1 (en) | Open source Power Quad Flat No-Lead (PQFN) leadframe | |
JP6200820B2 (ja) | 多相電力段用のリードフレームアイランドを備えたパワー・カッド・フラット・ノーリード(pqfn)半導体パッケージ | |
JP6235918B2 (ja) | シングルシャントインバータ回路に含まれるパワー・カッド・フラット・ノーリード(pqfn)パッケージ | |
JP6259675B2 (ja) | 共通集積回路(ic)上にブートストラップダイオードを有するパワー・カッド・フラット・ノーリード(pqfn)パッケージ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150526 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150821 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150908 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151016 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151124 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160223 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160614 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160622 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20160729 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170619 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170927 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171211 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6259675 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |