JP2014163851A - Semiconductor integrated circuit with open detection terminal - Google Patents

Semiconductor integrated circuit with open detection terminal Download PDF

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JP2014163851A
JP2014163851A JP2013036346A JP2013036346A JP2014163851A JP 2014163851 A JP2014163851 A JP 2014163851A JP 2013036346 A JP2013036346 A JP 2013036346A JP 2013036346 A JP2013036346 A JP 2013036346A JP 2014163851 A JP2014163851 A JP 2014163851A
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power supply
open detection
integrated circuit
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detection terminal
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Shinichiro Yamaguchi
慎一郎 山口
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Hitachi Information and Telecommunication Engineering Ltd
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PROBLEM TO BE SOLVED: To quickly detect an open failure of a power supply terminal with a simple circuit configuration.SOLUTION: A semiconductor integrated circuit, which is provided with a plurality of power supply circuits and power supply terminals that respectively lead the plurality of power supply circuits to the outside, includes: a power supply open detection terminal to which a voltage for testing is applied; and rectifier elements that respectively connect the open detection terminal and the power supply terminals.

Description

本発明は、半導体集積回路を評価する評価装置に接続する電源端子のオープン故障(評価装置と電源端子間の接続不良)を簡易に検出することのできるオープン検出回路付き半導体集積回路および該半導体集積回路を用いたオープン検出方法に関する。   The present invention relates to a semiconductor integrated circuit with an open detection circuit capable of easily detecting an open failure of a power supply terminal connected to an evaluation apparatus for evaluating a semiconductor integrated circuit (connection failure between the evaluation apparatus and the power supply terminal) and the semiconductor integrated circuit. The present invention relates to an open detection method using a circuit.

半導体デバイスのテストに際しては、最初に評価装置と半導体集積回路と接続し、その接続状態をチェックする。この接続チェックは電源接続チェックであり、半導体集積回路の電源端子(電源ピン)と評価装置との接続チェックである。   When testing a semiconductor device, first, the evaluation apparatus and the semiconductor integrated circuit are connected, and the connection state is checked. This connection check is a power supply connection check, which is a connection check between the power supply terminal (power supply pin) of the semiconductor integrated circuit and the evaluation apparatus.

しかし、半導体集積回路は多数の電源ピンを備え、また、基板上でピン間が短絡されている場合もある。このため電源ピンと評価装置間に発生するオープン故障(接続不良)のチェックは容易ではない。   However, the semiconductor integrated circuit includes a large number of power supply pins, and the pins may be short-circuited on the substrate. For this reason, it is not easy to check for an open failure (connection failure) occurring between the power supply pin and the evaluation device.

このような問題に関して、特許文献1には、信号入力端子の電位とグランド端子の電位をもとにグランド端子のオープンを検出するオープン検出回路を、半導体チップの電源端子とグランド端子間に付加した、グランド端子のオープン検出回路が開示されている。   With respect to such a problem, Patent Document 1 adds an open detection circuit that detects the open of the ground terminal based on the potential of the signal input terminal and the potential of the ground terminal between the power supply terminal and the ground terminal of the semiconductor chip. An open detection circuit for a ground terminal is disclosed.

特開2010−256064号公報JP 2010-256064 A

しかしながら、前記従来技術によるオープン検出回路は、コンパレータ(比較器)およびMOSトランジスタを多用し、回路規模が大きく構成も複雑である。このため、この回路を用いて、検査対象である半導体集積回路の全ての回路素子についてその動作検証するには、所要時間がかかりすぎる。また、一つの素子または回路であっても不具合があればオープン故障を検出することはできない。   However, the open detection circuit according to the prior art uses many comparators (comparators) and MOS transistors, and has a large circuit scale and a complicated configuration. Therefore, it takes too much time to verify the operation of all circuit elements of the semiconductor integrated circuit to be inspected using this circuit. Further, even if one element or circuit is defective, an open failure cannot be detected.

本発明はこれらの問題点に鑑みてなされたもので、簡易な回路構成で、電源端子のオープン故障を速やかに検出することのできるオープン検出回路付き半導体集積回路および該半導体集積回路を用いたオープン検出方法を提供するものである。   The present invention has been made in view of these problems. A semiconductor integrated circuit with an open detection circuit capable of quickly detecting an open failure of a power supply terminal with a simple circuit configuration, and an open circuit using the semiconductor integrated circuit. A detection method is provided.

本発明は上記課題を解決するため、次のような手段を採用した。   In order to solve the above problems, the present invention employs the following means.

複数の電源回路および該電源回路のそれぞれを外部に導出する電源端子を備えた半導体集積回路において、半導体集積回路は試験用の電圧を印加する電源オープン検出端子、および該オープン検出端子と前記電源端子のそれぞれとを接続する整流素子とを備えた。   A semiconductor integrated circuit having a plurality of power supply circuits and a power supply terminal for leading each of the power supply circuits to the outside, wherein the semiconductor integrated circuit applies a test voltage, a power supply open detection terminal, and the open detection terminal and the power supply terminal And a rectifying element for connecting each of the two.

本発明は、以上の構成を備えるため、簡易な回路構成で、電源端子のオープン故障(評価装置と評価対象である半導体回路の電源端子間の接続不良)を速やかに検出することができる。   Since the present invention has the above configuration, it is possible to quickly detect an open failure of the power supply terminal (connection failure between the evaluation device and the power supply terminal of the semiconductor circuit to be evaluated) with a simple circuit configuration.

オープン検出端子付き半導体集積回路を説明する図である。It is a figure explaining a semiconductor integrated circuit with an open detection terminal. オープン検出端子付き半導体集積回路における電源端子のオープン検出方法を説明する図である。It is a figure explaining the open detection method of the power supply terminal in a semiconductor integrated circuit with an open detection terminal. オープン検出端子付き半導体集積回路における電源端子のオープン故障を検出する手順を説明する図である。It is a figure explaining the procedure which detects the open failure of the power supply terminal in a semiconductor integrated circuit with an open detection terminal. オープン検出端子付き半導体集積回路における電源端子のオープン検出方法の他の例を説明する図である。It is a figure explaining the other example of the open detection method of the power supply terminal in a semiconductor integrated circuit with an open detection terminal. オープン検出端子付き半導体集積回路における電源端子のオープン故障を検出する手順の他の例を説明する図である。It is a figure explaining the other example of the procedure which detects the open failure of the power supply terminal in a semiconductor integrated circuit with an open detection terminal.

以下、本発明の実施形態を添付図面を参照しながら説明する。図1(A)はオープン検出端子付き半導体集積回路を説明する図であり、半導体集積回路は、電源回路2a、2b、2c、ピン状の電源端子Vcc1,Vcc2,Vcc3、および前記電源回路2a、2b、2cと電源端子Vcc1,Vcc2,Vcc3を接続する接続線4a、4b、4cを備える。   Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1A is a diagram illustrating a semiconductor integrated circuit with an open detection terminal. The semiconductor integrated circuit includes power supply circuits 2a, 2b, and 2c, pin-shaped power supply terminals Vcc1, Vcc2, and Vcc3, and the power supply circuit 2a. 2b, 2c and connection lines 4a, 4b, 4c for connecting power supply terminals Vcc1, Vcc2, Vcc3.

また、半導体集積回路100は、ピン状のオープン検出端子3、およびオープン検出端子3と前記接続線4a、4b、4cを接続する整流素子1a、1b、1cを備える。   The semiconductor integrated circuit 100 includes a pin-shaped open detection terminal 3 and rectifier elements 1a, 1b, and 1c that connect the open detection terminal 3 and the connection lines 4a, 4b, and 4c.

電源端子Vcc1,Vcc2,Vcc3と評価装置を構成する基準電圧印加装置22との接続状態を試験する際には、オープン検出端子3に試験電圧Vtを印加する。なお、基準電圧印加装置22は、一端を接地した可変電圧源で構成し、電源端子のオープン故障を検出する際には、前記可変電圧源を零Vに設定し、半導体集積回路100の動作の検証に際しては検証に適した電圧に位設定するとよい。   When testing the connection state between the power supply terminals Vcc1, Vcc2, and Vcc3 and the reference voltage application device 22 constituting the evaluation device, the test voltage Vt is applied to the open detection terminal 3. The reference voltage applying device 22 is composed of a variable voltage source having one end grounded. When detecting an open failure of the power supply terminal, the reference voltage applying device 22 is set to zero V to operate the semiconductor integrated circuit 100. At the time of verification, a voltage suitable for the verification may be set.

図1(B)はオープン検出端子付き半導体集積回路100(変形例)を説明する図であり、半導体集積回路100は電源回路2a、2b、2c、電源端子Vcc1,Vcc2,電源端子(接地電位)Vgnd、および電源回路2a、2b、2cと電源端子Vcc1,Vcc2,Vgndを接続する接続線4a、4b、4cを備える。   FIG. 1B is a diagram for explaining a semiconductor integrated circuit 100 (modified example) with an open detection terminal. The semiconductor integrated circuit 100 includes power supply circuits 2a, 2b, 2c, power supply terminals Vcc1, Vcc2, and power supply terminals (ground potential). Connection lines 4a, 4b, and 4c for connecting Vgnd and power supply circuits 2a, 2b, and 2c and power supply terminals Vcc1, Vcc2, and Vgnd are provided.

また、半導体集積回路100は、オープン検出端子3、およびオープン検出端子3と前記接続線4a、4b、4cを接続する整流素子1a、1b、1cを備える。電源端子Vcc1,Vcc2,Vgndと評価装置を構成する基準電圧印加装置22との接続状態を試験する際には、オープン検出端子3に試験電圧Vtを印加する。このように、電源端子Vcc1,Vcc2,Vcc3は、同種の電圧が印加される電源端子の外、接地電位等の異種の電位が印加される端子を含むことができる。   The semiconductor integrated circuit 100 includes an open detection terminal 3 and rectifying elements 1a, 1b, and 1c that connect the open detection terminal 3 and the connection lines 4a, 4b, and 4c. When testing the connection state between the power supply terminals Vcc1, Vcc2, and Vgnd and the reference voltage application device 22 constituting the evaluation device, the test voltage Vt is applied to the open detection terminal 3. As described above, the power supply terminals Vcc1, Vcc2, and Vcc3 can include terminals to which different potentials such as a ground potential are applied in addition to power supply terminals to which the same kind of voltage is applied.

なお、オープン検出端子付き半導体集積回路100は単結晶シリコンのような半導体基板に形成することができる。また、整流素子1a、1b、1cは、例えばオープン検出端子3から電源端子Vcc1,Vcc2,Vcc3に向けて電流が流れるように接続されている。   Note that the semiconductor integrated circuit 100 with an open detection terminal can be formed on a semiconductor substrate such as single crystal silicon. The rectifying elements 1a, 1b, and 1c are connected such that current flows from the open detection terminal 3 to the power supply terminals Vcc1, Vcc2, and Vcc3, for example.

ここで、整流素子1a、1b、1cとしてはオープン検出端子3にアノードが接続されたダイオードを用いたが、整流素子接続されたバイポーラトランジスタあるいはMOSFET等で構成することができる。また、電源端子Vccの数は限定されるものではない。   Here, as the rectifying elements 1a, 1b and 1c, diodes whose anodes are connected to the open detection terminals 3 are used, but they can be constituted by bipolar transistors or MOSFETs connected to the rectifying elements. Further, the number of power supply terminals Vcc is not limited.

図2は、オープン検出端子付き半導体集積回路100における電源端子のオープン検出方法を説明する図である。   FIG. 2 is a diagram for explaining an open detection method for a power supply terminal in the semiconductor integrated circuit 100 with an open detection terminal.

図2(A)に示すように、オープン検出端子付き半導体集積回路100のオープン検出端子3に電流計23を接続し、試験電圧印加装置21の試験電圧を電流計23を介してオープン検出端子3に印加する。   As shown in FIG. 2A, an ammeter 23 is connected to the open detection terminal 3 of the semiconductor integrated circuit 100 with an open detection terminal, and the test voltage of the test voltage application device 21 is connected to the open detection terminal 3 via the ammeter 23. Apply to.

ここで、図2(A)に示すようにオープン検出端子付き半導体集積回路100の電源端子Vcc1がオープン(電源端子Vcc1と基準電圧印加装置22との間が接続されていない)であるとすると、電源端子Vcc1のオープン故障は次のようにして検出できる。   Here, as shown in FIG. 2A, when the power supply terminal Vcc1 of the semiconductor integrated circuit 100 with an open detection terminal is open (the power supply terminal Vcc1 and the reference voltage applying device 22 are not connected), An open failure of the power supply terminal Vcc1 can be detected as follows.

先ず、検査対象となるオープン検出端子付き半導体半導体集積回路100の電源端子Vcc1に基準電圧、例えば接地電圧を与え、他の電源端子Vcc2,vcc3はフローティング状態にする。次いで、試験電圧印加装置を用いてオープン検出端子3に上記接地電位に対して所定の電位差のある電圧(整流素子の順方向電圧、例えば+0.8V以上)を印加する。基準電圧印加装置22と電源端子Vcc1間がオープンであれば、電流計23で電流が検出されないことから、容易にオープン(電源端子Vcc1と基準電圧印加装置22との間の接続不良)の有無を知ることができる。   First, a reference voltage, for example, a ground voltage is applied to the power supply terminal Vcc1 of the semiconductor semiconductor integrated circuit 100 with an open detection terminal to be inspected, and the other power supply terminals Vcc2 and vcc3 are set in a floating state. Next, a voltage having a predetermined potential difference with respect to the ground potential (a forward voltage of the rectifying element, for example, +0.8 V or more) is applied to the open detection terminal 3 using a test voltage application device. If the reference voltage application device 22 and the power supply terminal Vcc1 are open, no current is detected by the ammeter 23. Therefore, it is easy to check whether there is an open (connection failure between the power supply terminal Vcc1 and the reference voltage application device 22). I can know.

図2(B)に示すようにオープン検出端子付き半導体集積回路100の電源端子Vcc1と基準電圧印加装置22とが接続していると電流計23により、整流素子1aの電圧電流特性に従った電流が検出される。   As shown in FIG. 2B, when the power supply terminal Vcc1 of the semiconductor integrated circuit 100 with an open detection terminal and the reference voltage applying device 22 are connected, a current in accordance with the voltage-current characteristic of the rectifying element 1a is obtained by the ammeter 23. Is detected.

なお、基準電圧印加装置22は、電源端子Vcc1,Vcc2,Vcc3で共用することを前提に説明したが、基準電圧印加装置22を電源端子毎に配置しそれらを切り替えて使用することができる。   The reference voltage application device 22 has been described on the premise that it is shared by the power supply terminals Vcc1, Vcc2, and Vcc3. However, the reference voltage application device 22 can be arranged for each power supply terminal and used by switching them.

図3は、オープン検出端子付き半導体集積回路における電源端子のオープン故障を検出する手順を説明する図である。   FIG. 3 is a diagram illustrating a procedure for detecting an open failure of a power supply terminal in a semiconductor integrated circuit with an open detection terminal.

まず、図2(A)に示すような試験回路を構成する。すなわち、オープン検出端子付き半導体集積回路100のオープン検出端子3に電流計23を接続し、該電流計23を介して試験電圧印加装置21を接続する。   First, a test circuit as shown in FIG. That is, an ammeter 23 is connected to the open detection terminal 3 of the semiconductor integrated circuit 100 with an open detection terminal, and the test voltage application device 21 is connected via the ammeter 23.

次に、測定対象である半導体集積回路の電源端子Vcc1に基準電圧、例えば接地電圧を与える。このとき、他の電源端子Vcc2,Vcc3はフローティング状態にする(ステップ31,32)。   Next, a reference voltage, for example, a ground voltage is applied to the power supply terminal Vcc1 of the semiconductor integrated circuit to be measured. At this time, the other power supply terminals Vcc2 and Vcc3 are set in a floating state (steps 31 and 32).

次に、上記試験電圧印加装置21によりでオープン検出端子3に接地電位に対して電位差のある電位、例えば+0.8Vを印加する(ステップ33)。次に、電流計23で電流値を測定する(ステップ34)。   Next, a potential having a potential difference with respect to the ground potential, for example, +0.8 V, is applied to the open detection terminal 3 by the test voltage application device 21 (step 33). Next, the current value is measured by the ammeter 23 (step 34).

電流計で測定される電流が零であれば、測定対象の電源端子Vcc1はオープン故障であり、電流計で測定される電流があれば(電流計7で整流素子1の電流電圧特性に従った電流が検出される場合)オープン故障が存在しないことが分かる(ステップ36,37)。次に,残りの電源端子Vcc2、Vcc3に対しても同様な手順で試験を実行する。   If the current measured by the ammeter is zero, the power supply terminal Vcc1 to be measured is an open failure, and if there is a current measured by the ammeter (in accordance with the current-voltage characteristics of the rectifier element 1 by the ammeter 7). It can be seen that there is no open fault (if current is detected) (steps 36, 37). Next, the test is performed on the remaining power supply terminals Vcc2 and Vcc3 in the same procedure.

図4は、オープン検出端子付き半導体集積回路100における電源端子のオープン検出方法の他の例を説明する図である。   FIG. 4 is a diagram for explaining another example of a method for detecting an open of a power supply terminal in the semiconductor integrated circuit 100 with an open detection terminal.

図2の例に対して、この図の例は、電流計23の代わりに電圧計44を設け、試験電圧印加装置の代わりに試験電流供給装置41を設けたものである。   In contrast to the example of FIG. 2, in the example of this figure, a voltmeter 44 is provided instead of the ammeter 23, and a test current supply device 41 is provided instead of the test voltage application device.

図4(A)に示されるようにオープン検出端子付き半導体集積回路100の電源端子Vcc1がオープンしている場合の検出方法は、次の通りである。   As shown in FIG. 4A, the detection method when the power supply terminal Vcc1 of the semiconductor integrated circuit 100 with the open detection terminal is open is as follows.

先ず、オープン検出端子付き半導体集積回路100の電源端子Vcc1に基準電圧、例えば接地電圧を与え、他の電源端子Vcc2,Vcc3をフローティング状態にする。   First, a reference voltage, for example, a ground voltage is applied to the power supply terminal Vcc1 of the semiconductor integrated circuit 100 with an open detection terminal, and the other power supply terminals Vcc2 and Vcc3 are brought into a floating state.

次いで、上記試験電流供給装置41からオープン検出端子3に向けて整流素子の電流電圧特性が顕著に変化する電流値、例えば+0.5mAを供給する。このとき、電源端子Vcc1がオープンであれば、電圧計44で所定のレベルを超えた電圧が検出される。   Next, a current value at which the current-voltage characteristic of the rectifying element changes significantly, for example +0.5 mA, is supplied from the test current supply device 41 toward the open detection terminal 3. At this time, if the power supply terminal Vcc1 is open, the voltmeter 44 detects a voltage exceeding a predetermined level.

このため、電流供給装置の出力端と基準電圧印加装置出力端間の電位差を監視することにより容易にオープン故障の有無を知ることができる。   Therefore, the presence or absence of an open failure can be easily known by monitoring the potential difference between the output terminal of the current supply device and the output terminal of the reference voltage application device.

ここで、図4(B)に示すように測定対象の電源端子Vccにオープン故障がなければ、電圧計43により整流素子1の電流電圧特性に従った電圧、例えば+0.8Vが検出される。   Here, as shown in FIG. 4B, if there is no open failure in the power supply terminal Vcc to be measured, the voltmeter 43 detects a voltage according to the current-voltage characteristics of the rectifying element 1, for example, + 0.8V.

試験電流供給装置41は電源端子Vcc1、またはオープン検出端子3がオープンした場合にオープン検出端子3に異常電圧を印加しないように出力電圧を制限する機能を持たせておくのが望ましい。出力電圧の制限値としては整流素子の特性を考慮して、例えば1.5Vに設定しオープン検出端子3に1.5V以上の電圧が印加されないようにするとよい。   It is desirable that the test current supply device 41 has a function of limiting the output voltage so that an abnormal voltage is not applied to the open detection terminal 3 when the power supply terminal Vcc1 or the open detection terminal 3 is opened. In consideration of the characteristics of the rectifying element, the output voltage limit value may be set to 1.5 V, for example, so that a voltage of 1.5 V or more is not applied to the open detection terminal 3.

図5は、オープン検出端子付き半導体集積回路100を構成する電源端子におけるオープン故障を検出する手順を説明する図である。   FIG. 5 is a diagram for explaining a procedure for detecting an open failure in a power supply terminal constituting the semiconductor integrated circuit 100 with an open detection terminal.

まず、図4(A)に示す回路を構成する。すなわち、オープン検出端子付き半導体集積回路100のオープン検出端子3に試験電流供給装置41を接続する。また、電源端子Vcc1に基準電圧、例えば接地電圧を印加することのできる基準電圧印加装置を用意する。また試験電流供給装置41と基準電圧印加装置の出力端子間に電圧計44を挿入する
次に、電源端子Vcc1に基準電圧、例えば接地電圧を与える。このとき、他の電源端子Vcc2,Vcc3はフローティング状態にする(ステップ51,52)
次に、試験電流供給装置41から試験電流を供給する。この試験電流は、オープン検出端子3に上記接地電位に対して所定の電位差を検出できる電流値(例えば+0.5mA)とする(ステップ53)。次に、次に前記電圧計で前記電位差を測定する(ステップ54)。
First, the circuit shown in FIG. That is, the test current supply device 41 is connected to the open detection terminal 3 of the semiconductor integrated circuit 100 with an open detection terminal. In addition, a reference voltage application device capable of applying a reference voltage, for example, a ground voltage, to the power supply terminal Vcc1 is prepared. Further, the voltmeter 44 is inserted between the test current supply device 41 and the output terminal of the reference voltage application device. Next, a reference voltage, for example, a ground voltage is applied to the power supply terminal Vcc1. At this time, the other power supply terminals Vcc2 and Vcc3 are set in a floating state (steps 51 and 52).
Next, a test current is supplied from the test current supply device 41. The test current is set to a current value (for example, +0.5 mA) at which the open detection terminal 3 can detect a predetermined potential difference with respect to the ground potential (step 53). Next, the potential difference is measured with the voltmeter (step 54).

電源端子Vcc1がオープンであれば電圧計44で所定値以上の電圧が検出されることから、オープン故障であることを知ることができる(ステップ56)。また、測定対象の電源端子Vcc1にオープン故障が発生していなければ、電圧計43で、整流素子1の電流電圧特性に従った電圧が検出される(ステップ57)。次に,残りの測定対象である電源端子Vcc2、Vcc3に対しても同様な手順で試験を実行する(ステップ58)。   If the power supply terminal Vcc1 is open, a voltage of a predetermined value or more is detected by the voltmeter 44, so that an open failure can be known (step 56). If no open failure has occurred in the power supply terminal Vcc1 to be measured, the voltmeter 43 detects a voltage according to the current-voltage characteristics of the rectifying element 1 (step 57). Next, the test is performed on the remaining power supply terminals Vcc2 and Vcc3 in the same procedure (step 58).

なお、半導体集積回路100の通常の動作試験を行うときは、オープン検出端子3はフローティング、もしくは半導体集積回路100の最低電圧と同じ電位に固定する。これにより、オープン検出端子3と電源端子Vcc間には逆バイアスされた整流素子1が介在することになるので、オープン検出端子3が半導体集積回路100の動作に支障を来すことはない。   When a normal operation test of the semiconductor integrated circuit 100 is performed, the open detection terminal 3 is floated or fixed to the same potential as the lowest voltage of the semiconductor integrated circuit 100. As a result, the reverse-biased rectifier element 1 is interposed between the open detection terminal 3 and the power supply terminal Vcc, so that the open detection terminal 3 does not hinder the operation of the semiconductor integrated circuit 100.

以上説明したように、半導体集積回路に、オープン検出端子、および該オープン検出端子から例えば半導体集積回路の外部端子のそれぞれに向けて導通する整流素子を設け、前記オープン検出端子オープン検出端子に試験電圧を印加し、あるいは試験電流(定電流)を供給するとともに、前記試験電圧に基づく電流あるいは試験電流に基づく電圧を測定する。   As described above, a semiconductor integrated circuit is provided with an open detection terminal and a rectifying element that conducts from the open detection terminal to each of the external terminals of the semiconductor integrated circuit, for example, and a test voltage is applied to the open detection terminal open detection terminal. Or a test current (constant current) is supplied and a current based on the test voltage or a voltage based on the test current is measured.

このように、本実施形態では、電流あるいは電圧を測定(比較)するという単純な手法により短時間に電源端子のオープン故障の有無を検知することができる。よって、不良検出に要する時間を短縮し、不良半導体集積回路の選別時間を短くすることができる。不良確認操作が容易なことから、正常な半導体集積回路の動作テストの時間を短くすることができる。また、オープン故障の検出不良に伴う2次的な不良判定を抑止することができる。   Thus, in the present embodiment, it is possible to detect the presence or absence of an open failure of the power supply terminal in a short time by a simple method of measuring (comparing) current or voltage. Therefore, it is possible to shorten the time required for defect detection and shorten the sorting time for defective semiconductor integrated circuits. Since the defect confirmation operation is easy, it is possible to shorten the time for the normal operation test of the semiconductor integrated circuit. In addition, it is possible to suppress secondary failure determination associated with open failure detection failure.

なお、実施例ではオープン検出端子3を半導体集積回路の外部端子の1つとして説明したが、オープン検出端子3は1つに限定されることはなく、オープン検出操作を迅速に行うために共通に接続させた複数のオープン検出端子3を設けることもできる。   In the embodiment, the open detection terminal 3 is described as one of the external terminals of the semiconductor integrated circuit. However, the number of the open detection terminals 3 is not limited to one, and is commonly used to quickly perform the open detection operation. It is also possible to provide a plurality of connected open detection terminals 3.

なお、本発明は上記実施形態に限定されるものではなく、様々な変形例が含まれる。例えば、半導体集積回路における電源端子のオープン検出を例に説明したが,本願発明の適用分野は半導体集積回路に限定されるものではない。また、前記実施形態は本発明を分かりやすく説明するために詳細に説明したものであり、必ずしも説明した全ての構成を備えるものに限定されるものではない。   In addition, this invention is not limited to the said embodiment, Various modifications are included. For example, the open detection of the power supply terminal in the semiconductor integrated circuit has been described as an example, but the application field of the present invention is not limited to the semiconductor integrated circuit. Moreover, the said embodiment was described in detail in order to demonstrate this invention clearly, and is not necessarily limited to what is provided with all the structures demonstrated.

また、ある実施形態の構成の一部を他の実施形態の構成に置き換えることが可能であり、また、ある実施形態の構成に他の実施形態の構成を加えることも可能である。また、各実施形態の構成の一部について、他の構成の追加・削除・置換をすることが可能である。   Further, a part of the configuration of an embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of an embodiment. In addition, it is possible to add, delete, and replace other configurations for a part of the configuration of each embodiment.

また、上記の各構成、機能、処理部、処理手段等は、それらの一部又は全部を、例えば集積回路で設計する等によりハードウエアで実現してもよい。また、上記の各構成、機能等は、プロセッサがそれぞれの機能を実現するプログラムを解釈し、実行することによりソフトウエアで実現してもよい。   Each of the above-described configurations, functions, processing units, processing means, and the like may be realized by hardware by designing a part or all of them with, for example, an integrated circuit. Further, each of the above-described configurations, functions, and the like may be realized by software by interpreting and executing a program that realizes each function by the processor.

1 整流素子
2 電源回路
3 オープン検出端子
21 試験電圧印加装置
22 基準電圧印加装置
23 電流計
24 電流計
41 試験電流供給装置
42 基準電圧印加装置
43 電圧計
44 電圧計
100 オープン検出端子付き半導体集積回路
DESCRIPTION OF SYMBOLS 1 Rectification element 2 Power supply circuit 3 Open detection terminal 21 Test voltage application device 22 Reference voltage application device 23 Ammeter 24 Ammeter 41 Test current supply device 42 Reference voltage application device 43 Voltmeter 44 Voltmeter 100 Semiconductor integrated circuit with open detection terminal

Claims (3)

複数の電源回路および該電源回路のそれぞれを外部に導出する電源端子を備えた半導体集積回路において、
半導体集積回路は試験用の電圧を印加する電源オープン検出端子、および該オープン検出端子と前記電源端子のそれぞれとを接続する整流素子とを備えたことを特徴とする半導体集積回路。
In a semiconductor integrated circuit having a plurality of power supply circuits and a power supply terminal for leading each of the power supply circuits to the outside,
A semiconductor integrated circuit comprising: a power supply open detection terminal for applying a test voltage; and a rectifier element for connecting the open detection terminal and each of the power supply terminals.
複数の電源回路、該電源回路のそれぞれを外部に導出する電源端子、オープン検出端子、および該オープン検出端子と前記電源端子のそれぞれとを接続する整流素子とを備えた集積回路を試験する方法において、
試験対象である電源端子の一つを基準電圧源に接続した状態で、前記オープン検出端子にオープン試験電圧を印加し、このときに流れる給電電流をもとに前記電源端子のオープン故障を検出することを特徴とする集積回路の試験方法。
In a method for testing an integrated circuit comprising a plurality of power supply circuits, a power supply terminal for leading each of the power supply circuits to the outside, an open detection terminal, and a rectifier element connecting the open detection terminal and each of the power supply terminals ,
With one of the power supply terminals to be tested connected to a reference voltage source, an open test voltage is applied to the open detection terminal, and an open failure of the power supply terminal is detected based on the feeding current flowing at this time A method for testing an integrated circuit.
複数の電源回路、該電源回路のそれぞれを外部に導出する電源端子、オープン検出端子、および該オープン検出端子と前記電源端子のそれぞれとを接続する整流素子とを備えた集積回路を試験する方法において、
試験対象である電源端子の一つを基準電圧を基準電圧源に接続した状態で、前記オープン検出端子にオープン試験電流を印加し、このときに得られるオープン検出端子と前記基準電圧出力端子間の電圧をもとに前記電源端子のオープン故障を検出することを特徴とする集積回路の試験方法。
In a method for testing an integrated circuit comprising a plurality of power supply circuits, a power supply terminal for leading each of the power supply circuits to the outside, an open detection terminal, and a rectifier element connecting the open detection terminal and each of the power supply terminals ,
With one of the power supply terminals to be tested connected to a reference voltage source with a reference voltage, an open test current is applied to the open detection terminal, and the open detection terminal obtained at this time is connected to the reference voltage output terminal. An integrated circuit test method, wherein an open failure of the power supply terminal is detected based on a voltage.
JP2013036346A 2013-02-26 2013-02-26 Semiconductor integrated circuit with open detection terminal Pending JP2014163851A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017183406A1 (en) * 2016-04-20 2017-10-26 住友電装株式会社 Disconnection sensing circuit and electrical connection box
KR20220117995A (en) * 2021-02-18 2022-08-25 주식회사 현대케피코 Apparatus for diagnosing external disconnection of integrated circuit chip and method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017183406A1 (en) * 2016-04-20 2017-10-26 住友電装株式会社 Disconnection sensing circuit and electrical connection box
JP2017195489A (en) * 2016-04-20 2017-10-26 住友電装株式会社 Disconnection detection circuit and electric connection box
US10921384B2 (en) 2016-04-20 2021-02-16 Sumitomo Wiring Systems, Ltd. Disconnection sensing circuit and electrical connection box
KR20220117995A (en) * 2021-02-18 2022-08-25 주식회사 현대케피코 Apparatus for diagnosing external disconnection of integrated circuit chip and method thereof
KR102512726B1 (en) 2021-02-18 2023-03-22 주식회사 현대케피코 Apparatus for diagnosing external disconnection of integrated circuit chip and method thereof

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