JP2014154696A - Semiconductor device, and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly productive semiconductor device and a method of manufacturing the semiconductor device.SOLUTION: The method of manufacturing the semiconductor device according to an embodiment comprises the steps of: preparing a lower mold 11 having a recess 11a and a recess 11b for a terminal; disposing a heat sink 12 on the recess 11a of the lower mold 11 and disposing a control terminal 16 in the recess 11b for a terminal; wire-bonding a semiconductor element 13 provided on the heat sink 12 to the control terminal 16 in a state that the heat sink 12 is disposed on the lower mold 11; stacking an upper mold 21 over the lower mold 11 accommodating the heat sink 12; injecting a sealing resin 18 into between the lower mold 11 and the upper mold 21; and removing the upper mold 21 and the lower mold 11 from the sealing resin 18.

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  A method of bonding a semiconductor chip to a heat sink is disclosed (Patent Document 1). In the state where the heat sink and the lead of Patent Document 1 are in close contact with each other, the semiconductor element and the lead are connected by a wire. After the wire bonding is completed, the heat sink and the lead are separated by deformation of the connecting portion.

JP 2006-222259 A

  In the method disclosed in Patent Document 1, the heat sink and the chip are sandwiched between the upper mold and the lower mold after the wire bonding step. Then, a molding resin is poured into a cavity surrounded by the upper mold and the lower mold. Thereafter, the package is taken out from the mold and the leads are cut. The semiconductor device is molded with resin, and leads (outer leads) extend from the resin.

  In such a semiconductor device, it is necessary to perform soldering in order to connect the control terminal to the control board. Cost reduction can be achieved by using a press-fit without soldering. In press-fit, leads (control terminals) are press-fitted and connected to holes in the control board. In press-fit, it is necessary to manufacture the lead (control terminal) with a spring material different from the heat sink or electrode material. For this reason, it is bonded in advance to a lead frame on which a heat sink or the like is formed.

  Therefore, when a press-fit terminal is used, it is necessary to form a lead frame, and it is difficult to suppress material costs. Furthermore, since it is necessary to perform tie bar cutting, it is difficult to suppress the manufacturing cost.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide a semiconductor device with high productivity and a method for manufacturing the same.

  The method for manufacturing a semiconductor device according to one aspect of the present invention includes a step of preparing a first mold having a recess and a terminal recess, a heat sink is disposed in the recess of the first mold, and the terminal A step of disposing a control terminal in the concave portion, a step of wire bonding a semiconductor element provided on the heat sink to the control terminal in a state where the heat sink is disposed in the first mold, and the heat sink. A step of superimposing a second mold on the accommodated first mold, a step of injecting a sealing resin between the first mold and the second mold, and the first mold Opening the mold and the second mold, and taking out the semiconductor device in which the semiconductor element and the bonding wire are sealed with the sealing resin. Thereby, a semiconductor device can be manufactured with high productivity.

  In the above manufacturing method, the control terminal may be provided with a positioning portion, and a positioning recess may be provided at a position corresponding to the positioning portion of the first mold. Thereby, it can position easily and can improve productivity.

  In the manufacturing method described above, the method further includes a step of connecting the control terminal protruding from the sealing resin to a substrate, and in the step of connecting to the substrate, the press-fitting jig applies a load to the positioning portion, and The control terminal may be press-fitted into the hole of the substrate. Thereby, the control terminal can be easily press-fitted into the substrate.

  In the manufacturing method described above, a plurality of the control terminals are provided, a connection portion for connecting the plurality of control terminals is provided, and the connection portion is opened after the first mold and the second mold are opened. The plurality of control terminals may be separated by cutting. Thereby, a control terminal can be easily arrange | positioned to the recessed part for control terminals.

  In the above manufacturing method, the heat sink and the semiconductor element may be joined in a state where the heat sink is disposed in the recess. Within the first mold, the semiconductor element can be bonded to the heat sink.

  In the above manufacturing method, the first mold may be provided with a light transmitting portion, and the semiconductor element may be soldered to the heat sink by irradiating the heat sink with light through the light transmitting portion. . Thereby, it can heat efficiently and can improve productivity.

  In the above manufacturing method, the semiconductor element may be soldered to the heat sink by inductively heating the first mold. Thereby, it can heat efficiently and can improve productivity.

  A semiconductor device according to an aspect of the present invention includes a semiconductor element, a heat sink to which the semiconductor element is bonded, a bonding wire connected to the semiconductor element, and a control connected to the semiconductor element through the bonding wire. A sealing resin for sealing the semiconductor element and the bonding wire, the sealing resin provided so that a part of the control terminal is exposed to the outside, and the sealing resin The sealing resin is provided so that there is no cut portion in the portion extending from the heat sink. Thereby, a semiconductor device can be manufactured with high productivity.

  The semiconductor device may further include a substrate having a hole into which the control terminal is press-fitted. Thereby, productivity can be improved.

  In the semiconductor device described above, the control terminal is provided with a bent portion or a convex portion outside the sealing resin, and a tip portion is press-fitted into the hole of the substrate than the bent portion or the convex portion. May be. Thereby, it can position easily and can improve productivity.

  According to the present invention, a highly productive semiconductor device and a method for manufacturing the same can be provided.

It is a top view which shows the manufacturing process of a semiconductor device. It is sectional drawing which shows the manufacturing process of a semiconductor device. It is a top view which shows the manufacturing process of a semiconductor device. It is sectional drawing which shows the manufacturing process of a semiconductor device. It is a top view which shows the manufacturing process of a semiconductor device. It is sectional drawing which shows the manufacturing process of a semiconductor device. It is a top view which shows the manufacturing process of a semiconductor device. It is sectional drawing which shows the manufacturing process of a semiconductor device. It is a top view which shows the manufacturing process of a semiconductor device. It is a top view which shows the connection part of a semiconductor device and a control board. It is a top view which shows the solder connection part of a semiconductor device and a control board. It is a figure which shows typically the state where the relative position of a control terminal and a heat sink is not being fixed. It is a figure which shows typically the semiconductor device using a lead frame. 10 is a diagram schematically showing a manufacturing process of a semiconductor device according to Modification 1. FIG. 10 is a diagram schematically showing a manufacturing process of a semiconductor device according to Modification 2. FIG. FIG. 6 is a plan view schematically showing a semiconductor device according to a second embodiment. It is a top view which shows a lower mold typically FIG. 6 is a plan view illustrating a press-fitting process of a semiconductor device according to a second embodiment; It is a figure which expands and shows the press fit part of FIG. FIG. 6 is a plan view schematically showing a semiconductor device according to a third embodiment. It is a top view which shows a lower mold typically FIG. 9 is a plan view showing a press-fitting process of a semiconductor device according to a third embodiment. FIG. 10 is a plan view schematically showing a configuration before sealing of the semiconductor device of the fourth embodiment. It is a top view which shows the manufacturing process of the semiconductor device concerning the comparative example 1. It is a top view which shows the manufacturing process of the semiconductor device concerning the comparative example 1. It is a top view which shows the manufacturing process of the semiconductor device concerning the comparative example 1. It is a top view which shows the manufacturing process of the semiconductor device concerning the comparative example 1. It is a top view which shows typically the semiconductor device concerning the comparative example 1. It is a top view which shows the manufacturing process of the semiconductor device concerning the comparative example 2. It is a top view which shows the manufacturing process of the semiconductor device concerning the comparative example 2. It is a top view which shows the manufacturing process of the semiconductor device concerning the comparative example 2. It is a top view which shows the manufacturing process of the semiconductor device concerning the comparative example 2. It is a top view which shows typically the semiconductor device concerning the comparative example 2.

  Hereinafter, embodiments of a moving body according to the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. In addition, for clarity of explanation, the following description and drawings are simplified as appropriate.

Embodiment 1 FIG.
A semiconductor and a manufacturing method thereof according to this embodiment will be described with reference to the drawings. 1 to 9 are diagrams showing a manufacturing process of a semiconductor device. 1, FIG. 3, FIG. 5, FIG. 7, and FIG. 9 are plan views of a semiconductor device and a mold in each manufacturing process. 2 is a cross-sectional view taken along the line II-II in FIG. Similarly, FIG. 4, FIG. 6, and FIG. 8 are cross-sectional views at each step in the same position as FIG. In the description of FIGS. 1 to 9, an XYZ orthogonal coordinate system is used. The Z direction is the thickness direction of the semiconductor device, and the X direction and the Y direction are directions orthogonal to the thickness direction of the semiconductor device.

(Preparation of lower mold 11)
First, the manufacturing process of the semiconductor device will be described. As shown in FIGS. 1 and 2, a lower mold (first mold) 11 is prepared. The lower mold 11 has a recess 11a, a terminal recess 11b, and a terminal recess 11c. The recess 11a is connected to the terminal recess 11b and the terminal recess 11c. The recess 11a is formed deeper than the terminal recess 11b and the terminal recess 11c. In the XY plane, the recess 11 a is disposed at the center portion of the lower mold 11. The terminal recess 11b extends in the + X direction of the recess 11a, and the terminal recess 11c extends in the −X direction of the recess 11a. In the XY plane, the terminal recess 11b is formed in a rectangular shape with the X direction as the longitudinal direction. Here, the three terminal recesses 11b extend from the recess 11a, but the number of terminal recesses 11b is not particularly limited, and may be one or more.

(Installation of heat sink 12)
Then, as shown in FIGS. 3 and 4, a heat sink 12 is installed in the lower mold 11. That is, the heat sink 12 is disposed in the recess 11 a of the lower mold 11. The heat sink 12 has a terminal 12a extending to the −X side. The terminal 12 a is thinner than the heat sink 12. The terminal 12a is disposed in the terminal recess 11c. The heat sink 12 also serves as an electrode, and is formed of, for example, a copper material. The terminal 12 a is integrated with the heat sink 12. That is, the terminal 12 a is also formed of the same copper material as the heat sink 12. The heat sink 12 becomes an electrode. The recess 11a is formed with a thickness and a depth substantially equal to that of the heat sink 12.

  A semiconductor element 13 and a semiconductor element 14 are provided on the heat sink 12. That is, the semiconductor elements 13 and 14 are arranged on the surface of the heat sink 12 on the + Z side. The semiconductor elements 13 and 14 are fixed to the heat sink 12 by solder bonding. That is, the heat sink 12 is mechanically integrated with the semiconductor elements 13 and 14. The semiconductor element 13 and the semiconductor element 14 are electrically connected to the heat sink 12. The heat sink 12 is electrically and thermally integrated with the semiconductor elements 13 and 14. The semiconductor element 13 has a bonding pad 13a connected to the control terminal 16 as will be described later.

  The semiconductor element 13 and the semiconductor element 14 are power semiconductors such as IGBTs (Insulated gate bipolar transistors) and diodes, for example. The heat sink 12 is provided to radiate heat from the semiconductor elements 13 and 14. For example, supplying power to the semiconductor elements 13 and 14 causes the semiconductor elements 13 and 14 to generate heat. The heat sink 12 is formed of a material having high thermal conductivity such as copper, and dissipates heat generated in the semiconductor elements 13 and 14 to the outside. Note that the semiconductor element 13 or the semiconductor element 14 may be in a state of being fixed to the heat sink 12 in advance before being installed in the lower mold 11. The element 14 may be fixed to the heat sink 12. Of course, the number and kind of semiconductor elements mounted on the heat sink 12 are not particularly limited.

  The terminal 12a extending in the −X direction from the heat sink 12 is disposed in the terminal recess 11c. That is, the terminal recess 11c has a size and shape corresponding to the terminal 12a. Therefore, the terminal 12a is accommodated in the terminal recess 11c. Further, the concave portion 11 a is larger than the size of the heat sink 12. Therefore, although the heat sink 12 is accommodated in the recess 11 a, a space is generated in the outer periphery of the heat sink 12. In this process, nothing is arranged in the terminal recess 11b.

(Installation of control terminal 16 and wire bonding)
Next, as shown in FIGS. 5 and 6, after the control terminal 16 is disposed in the terminal recess 11b, the bonding wire 15 is connected. One end of the bonding wire 15 is connected to the bonding pad 13 a and the other end is connected to the control terminal 16. In other words, the control terminal 16 and the semiconductor element 13 are electrically connected via the bonding wire 15.

  The control terminal 16 has a longitudinal direction in the X direction and is arranged on the + X side of the heat sink 12. The terminal recess 11 b has a size and shape corresponding to the control terminal 16. Specifically, the control terminal 16 is a rod-shaped metal member having substantially the same width as the terminal recess 11b. In the X direction, the control terminal 16 is longer than the terminal recess 11b. Therefore, a part of the control terminal 16 protrudes to the recess 11a. Further, the control terminal 16 has substantially the same thickness as the depth of the terminal recess 11b. Therefore, the height of the upper surface of the control terminal 16 in the Z direction is substantially the same as the height of the upper surface of the heat sink 12 and the upper surface of the lower mold 11.

  The portion protruding from the recess 11 a of the control terminal 16 and the bonding pad 13 a of the semiconductor element 13 are wire bonded. In other words, the bonding pad 13 a of the semiconductor element 13 and the control terminal 16 are electrically connected using the bonding wire 15. In a state where the heat sink 12 and the control terminal 16 are arranged in the lower mold 11, the semiconductor element 13 on the heat sink 12 is bonded to the control terminal 16. The bonding wire 15 is arranged so as to protrude from the recess 11a of the lower mold 11 to the + Z side.

  The bonding wire 15 is a thin wire having a thickness of several tens of μm to several hundreds of μm formed of, for example, an aluminum material. The control terminal 16 is a press-fit terminal as will be described later. Therefore, the control terminal 16 is formed of a spring material such as phosphor bronze or beryllium copper, for example. That is, the control terminal 16 is formed of a material different from that of the heat sink 12. The shape and material of the control terminal 16 are not particularly limited, and may be the same material as the heat sink 12 when soldering the connection to the control board instead of press-fit.

  In the above description, the control terminal 16 is installed after the heat sink 12 is installed in the lower mold 11. However, the order in which the heat sink 12 and the control terminal 16 are installed is not particularly limited. For example, after the control terminal 16 is installed in the lower mold 11, the heat sink 12 may be installed, or the heat sink 12 and the control terminal 16 may be installed at substantially the same timing. In the bonding process, the position of the control terminal 16 is regulated by the terminal recess 11b. Therefore, the relative position of the control terminal 16 with respect to the heat sink 12 does not shift. Therefore, it is possible to prevent the bonding wire 15 from generating stress. The stress generated after the bonding can prevent the bonding wire 15 from being disconnected or the strength from being lowered.

(Installation of upper mold 21)
Next, the lower mold 11 is installed in the molding machine, and the upper mold (second mold) 21 is installed on the lower mold 11 as shown in FIGS. 7 and 8. In FIG. 7, since the heat sink 12, the semiconductor element 13, the semiconductor element 14, the bonding wire 15, and the control terminal 16 are covered with the upper mold 21 and cannot be seen, these configurations are indicated by dotted lines. The upper mold 21 is provided with a recess 21a in which the semiconductor element 13, the bonding wire 15 and the like are disposed. Then, the upper mold 21 is overlapped with the lower mold 11 so that the recess 21a of the upper mold 21 and the recess 11a of the lower mold 11 face each other. The lower mold 11 containing the heat sink 12 is superposed on the upper mold 21. As a result, the combined space of the recess 11 a and the recess 21 a becomes the sealed space 19.

  At this time, the heat sink 12, the semiconductor element 13, the semiconductor element 14, and the bonding wire 15 are disposed in the sealing space 19 between the upper mold 21 and the lower mold 11. A part of the control terminal 16 is disposed in the sealing space 19. As described above, the end of the control terminal 16 is disposed in the terminal recess 11b, and the terminal 12a is disposed in the terminal recess 11c.

(Sealing)
Next, the sealing resin 18 is sealed in the sealing space 19. Then, the upper mold 21 and the lower mold 11 are opened, and the semiconductor device 10 in which the semiconductor element 14 and the bonding wire 15 are sealed with the sealing resin 18 is taken out. Thereby, it becomes as shown in FIG. In this way, the semiconductor device 10 is completed. The completed semiconductor device 10 has a configuration in which the heat sink 12, the semiconductor element 13, the semiconductor element 14, the bonding wire 15 and the like are covered with the sealing resin 18. However, in FIG. These configurations are schematically shown.

  The terminal 12 a and the control terminal 16 extend from the inside to the outside of the sealing resin 18. An end portion of the terminal 12a and an end portion of the control terminal 16 are disposed in the sealing resin 18 and are exposed to the outside. That is, in the terminal recess 11b and the terminal recess 11c, since the gap with respect to the terminal 12a and the control terminal 16 is narrow, the sealing resin 18 is not sealed in the terminal recess 11b and the terminal recess 11c. The control terminal 16 is not covered with the sealing resin 18. In this way, the heat sink 12, the semiconductor element 13, the semiconductor element 14, and the control terminal 16 are molded and integrated. The semiconductor elements 13 and 14 and the bonding wire 15 are completely covered and protected by the sealing resin 18.

  By doing so, the heat sink 12, the control terminal 16, and the like are fixed by the sealing resin 18. Further, the lower mold 11 fixes the heat sink 12 and the control terminal 16 before sealing with the sealing resin 18. Therefore, the relative position of the control terminal 16 with respect to the heat sink 12 is not shifted, and the stress generated in the bonding wire 15 can be reduced. As a result, disconnection of the bonding wire 15 due to stress and a decrease in strength can be prevented.

(Connection with control board 23)
When the completed semiconductor device 10 is connected to the control board 23 as described above, it is as shown in FIG. The control terminal 16 is a press-fit terminal. The control terminal 16 is press-fitted into a hole provided in the control board 23. Since the control terminal 16 is formed of a spring material, the control terminal 16 continues to push the hole through which the control terminal 16 penetrates from the inside. Thereby, conduction with the control board 23 and mechanical connection can be maintained.

(Effects of press-fit connection)
In general, electrodes and terminals are required to have high electrical conductivity, and the heat sink 12 is required to have high thermal conductivity. Therefore, the heat sink 12 and the terminal 12a are made of pure copper or a similar copper material. That is, it is desirable that the heat sink 12 and the terminal 12a be formed of a material mainly composed of copper.

  On the other hand, a copper material having a high copper content is plastically deformed by a small amount of deformation, and it is difficult to maintain a sufficient elastic force for a long time. For example, when the control terminal 16 is formed of the same copper material as that of the heat sink 12, a sufficient elastic force cannot be obtained in the long term, so that press-fit connection becomes difficult. That is, conduction failure and fixing failure occur. Therefore, when a copper material is used as the control terminal material, the control terminal 36 and the control board 23 are soldered by the solder material 37 as shown in FIG. By performing the soldering process, the production cost cannot be suppressed.

  When performing press-fit connection, the control terminal 16 is made of an alloy such as phosphor bronze or beryllium copper, which is a spring material. By doing so, it becomes possible to maintain a sufficient elastic force in the long term. For example, the control terminal 16 can be made of a copper alloy having a pure copper ratio of 15 to 30%. In this way, the semiconductor device 10 can be reliably connected and fixed to the control board 23.

  In this embodiment, as shown in FIG. 10, the control terminal 16 is press-fitted into the through hole of the control board 23 as a press-fit terminal. Thereby, the semiconductor device 10 can be connected and fixed to the control board 23 without performing soldering to the control board 23. Therefore, productivity can be improved.

(Comparison with lead frame)
When phosphor bronze or beryllium copper having a pure copper ratio of 15 to 20% is used as the material of the control terminal 16, the electrical conductivity is deteriorated. When phosphor bronze or beryllium copper having a pure copper ratio of 20 to 30% is used as the material of the control terminal 16, the thermal conductivity is deteriorated. The demand for electrical conductivity and thermal conductivity is higher for electrodes and terminals of devices with high current and high heat generation such as power elements. When a spring material having the same content is used as a power supply terminal or a heat sink for heat dissipation, there is a risk that sufficient electrical conductivity and thermal conductivity cannot be obtained.

  The semiconductor device 10 is usually produced in the order of soldering of the heat sink 12 and the semiconductor element 13, wire bonding, and resin sealing. When the product is transported to the next process after wire bonding, the bonding wire 15 may be damaged if it is connected by the thin bonding wire 15. There is a possibility that the bonding wire 15 may be cut due to a relative displacement between the control terminal 16 and the heat sink 12. For example, as shown in FIG. 12, when the control terminal 16 and the heat sink 12 are not fixed by the sealing resin, the relative position of the control terminal 16 with respect to the semiconductor element 13 may change. When the control terminal 16 is displaced with respect to the semiconductor element 13, stress is applied to the bonding wire 15, and the bonding wire 15 may be damaged or deformed.

  In order to fix the relative position of the control terminal 16 and the heat sink 12, it is conceivable to use a lead frame 40 as shown in FIG. The lead frame 40 has a first frame 41 and a second frame 42. The first frame 41 and the second frame 42 are fixed by a fixing portion 43. The fixing portion 43 is formed by a method such as caulking, ultrasonic connection, or welding. The first frame 41 includes a terminal portion 44 and a heat sink portion 45. The terminal portion 44 corresponds to the terminal 12 a in FIG. 9, and the heat sink portion 45 corresponds to the heat sink 12. Semiconductor elements 33 and 34 are provided in the heat sink portion 45. The first frame 41 is formed of the same copper material as the heat sink 12.

  The second frame 42 has a lead portion 47 and a tie bar 46. The lead portion 47 extends in the X direction. The tie bar 46 extends in the Y direction so as to intersect with the plurality of lead portions 47. The lead part 47 is connected by a tie bar 46. By cutting the tie bar 46 in a later tie bar cutting step, the lead portion 47 becomes a control terminal. The second frame 42 is formed of the same spring material as that of the control terminal 16.

  Thus, the terminal portion 44, the heat sink portion 45, the lead portion 47, and the like are formed by the integrated lead frame 40. By doing so, the bonding wire 35 can be protected from the relative displacement between the heat sink portion 45 and the tie bar 46. Then, the bonding wire 35 and the like are sealed with a sealing resin. Thereby, the lead part 47 and the heat sink part 45 are fixed. Then, unnecessary portions such as the fixing portion 43 and the tie bar 46 are cut.

  As described above, when the lead frame 40 is used, a fixing connection process for fixing the first frame 41 and the second frame 42 and a cutting process such as a tie bar cut increase. The material for forming the lead frame 40 increases. Therefore, it becomes difficult to suppress the production cost.

  On the other hand, by using the manufacturing method according to the present embodiment, a fixed connection process for fixing two frames, a tie bar cutting process such as cutting a tie bar connecting the lead portions 47, and the like are unnecessary. Furthermore, consumption of the material that becomes the heat sink 12 and the control terminal 16 can be suppressed. Thereby, productivity can be improved. The semiconductor device 10 according to the present embodiment can be manufactured without performing tie bar cutting on the control terminal 16. Specifically, wire bonding is performed in a state where a plurality of control terminals 16 are arranged in the terminal recess 11b. Therefore, it is not necessary to cut unnecessary portions after sealing. The end surfaces of the heat sink 12 and the control terminal 16 are configured so that there are no cut portions (cut marks) formed by cutting tie bars and unnecessary portions. Thus, productivity can be improved in the semiconductor device 10 and the manufacturing method thereof according to the present embodiment.

(Modification 1)
Modification 1 of the semiconductor device manufacturing method according to the present embodiment will be described with reference to FIG. FIG. 14 is a cross-sectional view showing the steps of the semiconductor device manufacturing method according to Modification 1. In the present embodiment, a process of fixing the semiconductor element 13 and the semiconductor element 14 to the heat sink 12 is shown. In the first modification, the semiconductor elements 13 and 14 are joined to the heat sink 12 with the heat sink 12 installed in the lower mold 11. In the first modification, the semiconductor elements 13 and 14 are soldered to the heat sink 12 by light heating. The bonding process of the semiconductor elements 13 and 14 is performed before the wire bonding process.

  Therefore, the translucent part 111 is provided on the bottom of the lower mold 11, that is, on the −Z side surface. The translucent part 111 transmits the light for heating. For example, the translucent part 111 can be formed by a through hole. That is, by providing a through hole on the bottom surface of the lower mold 11, it is possible to form the light transmitting portion 111. Or you may form the translucent part 111 with the material which permeate | transmits the laser beam L1. The light transmitting part 111 may be formed by providing a window part that transmits the laser light L <b> 1 on the bottom surface of the lower mold 11. The whole or a part of the lower mold 11 may be a material that transmits light.

  A heat sink 12 is installed on the lower mold 11 having the light transmitting portion 111. Further, the semiconductor elements 13 and 14 are disposed on the heat sink 12. Solder material (not shown) is disposed at the junction between the semiconductor elements 13 and 14 and the heat sink 12, and the laser beam L <b> 1 for heating is irradiated from the translucent part 111. By doing so, the solder material is melted and the semiconductor elements 13 and 14 can be fixed to the heat sink 12.

  The semiconductor elements 13 and 14 can be easily connected and fixed to the heat sink 12. Further, since the heat sink 12 can be directly light-heated, the heating efficiency can be improved. Note that light used for heating is not limited to laser light, and infrared light or the like can be used. The translucent part 111 is covered with the heat sink 12. For this reason, it can prevent that sealing resin comes out of the through-hole used as the translucent part 111 at a sealing process.

(Modification 2)
Modification 2 of the method for manufacturing the semiconductor device according to the present embodiment will be described with reference to FIG. FIG. 15 is a cross-sectional view illustrating the steps of a method for manufacturing a semiconductor device according to Modification 2. In the present embodiment, a process of bonding the semiconductor element 13 and the semiconductor element 14 to the heat sink 12 is shown. In the second modification, as in the first modification, the semiconductor elements 13 and 14 are fixed to the heat sink 12 with the heat sink 12 installed in the lower mold 11. In the second modification, the semiconductor elements 13 and 14 are soldered to the heat sink 12 by induction heating.

  Therefore, the lower mold 11 is formed of a metal material that can be induction-heated. For example, an iron-based material can be used as the lower mold 11. A heat sink 12 is installed in a lower mold 11 made of an iron-based material. The semiconductor elements 13 and 14 are disposed on the heat sink 12. An induction heating coil 112 is installed on the −Z side of the lower mold 11. Solder material is disposed at the joint between the semiconductor elements 13 and 14 and the heat sink 12, and an alternating current is supplied to the induction heating coil 112.

  The induction heating coil 112 generates a high frequency induction magnetic field. Thereby, an eddy current flows through the lower mold 11 and Joule heat is effectively generated. The heat generated in the lower mold 11 raises the temperature of the heat sink 12. As a result, the solder material is melted and the semiconductor elements 13 and 14 can be fixed to the heat sink 12. Thus, the semiconductor elements 13 and 14 can be easily connected and fixed to the heat sink 12.

  In addition, since processes other than the soldering in the modified examples 1 and 2 are the same as those in the first embodiment, description thereof is omitted. Of course, the semiconductor elements 13 and 14 may be bonded to the heat sink 12 by a method other than the first and second embodiments.

Embodiment 2. FIG.
A semiconductor device according to the present embodiment and a manufacturing method thereof will be described with reference to FIGS. FIG. 16 is a plan view schematically showing the configuration of the semiconductor device 10, and FIG. 17 is a plan view showing the configuration of the lower mold 11. The semiconductor device 10 shown in FIG. 16 has a configuration before the sealing step, and is arranged in the lower mold 11 shown in FIG. That is, in FIG. 16, illustration of the sealing resin 18 is omitted.

  In the present embodiment, as shown in FIG. 16, the control terminal 16 is provided with a positioning portion 16a. Further, as shown in FIG. 17, the lower mold 11 is provided with a positioning recess 11d. Since the configuration other than the positioning portion 16a and the positioning recess 11d is the same as that of the first embodiment, the description thereof is omitted.

  The positioning part 16a is formed by a convex part provided in the middle of the control terminal 16 in the X direction. That is, the positioning part 16a protrudes in the Y direction. The positioning part 16a is formed by the width of the control terminal 16 extending in the Y direction. The positioning recess 11d is formed at a position corresponding to the positioning portion 16a. The positioning portion 16a is disposed in the positioning recess 11d. In other words, if the position in the XY direction is deviated from the design position, the control terminal 16a cannot be installed in the positioning recess 11d. Therefore, the position of the control terminal 16 in the X direction with respect to the terminal recess 11b is restricted. By doing in this way, the position of the control terminal 16 with respect to the heat sink 12 can be positioned correctly.

  It is also possible to use the convex portion that becomes the positioning portion 16a for press-fitting. In this case, the positioning portion 16a is disposed so as to be exposed to the outside of the sealing resin 18. This method will be described with reference to FIGS. FIG. 18 is a diagram schematically illustrating the semiconductor device 10 in the press-fitting process. FIG. 19 is an enlarged view of the press-fitted portion of FIG.

  The control terminal 16 is press-fitted into the through hole 23 a of the control board 23, and the control terminal 16 is pushed in the direction of the arrow by the press-fitting jig 29. Thereby, the control terminal 16 is press-fitted into the through hole 23a. At this time, the press-fitting jig 29 is brought into contact with the positioning portion 16a, and a load is applied to the positioning portion 16a. Thereby, the load from the press-fitting jig 29 is applied to the positioning portion 16a. A load can be easily applied to the control terminal 16, and the productivity of the press-fitting process can be improved. Thereby, the semiconductor device 10 can be easily connected and fixed to the control board 23. Furthermore, electrical connection can be reliably performed, and the occurrence of poor connection or the like can be prevented. Productivity can be improved.

  Furthermore, in the Y direction, the through hole 23a is smaller than the width of the positioning portion 16a. Therefore, the + X side surface of the positioning portion 16a abuts on the surface of the control board 23, and the press-fitting position is restricted. In this way, the semiconductor device 10 can be positioned with respect to the control board 23. Here, the distal end portion 16 b of the control terminal 16 penetrates the control board 23.

Embodiment 3 FIG.
The semiconductor device according to the present embodiment and the manufacturing method thereof will be described with reference to FIGS. FIG. 20 is a plan view schematically showing the configuration of the semiconductor device 10, and FIG. 21 is a plan view showing the configuration of the lower mold 11. FIG. 22 is a diagram schematically showing a process of press-fitting the control terminal 16. Note that the semiconductor device 10 shown in FIG. 20 has a configuration before the sealing step, and is actually disposed in the lower mold 11 shown in FIG.

  In the present embodiment, the shapes of the positioning portion 16a and the positioning recess 11d are different from those of the second embodiment. In the present embodiment, as shown in FIG. 22, the positioning portion 16a is formed by bending the control terminal 16 into an L shape. That is, the control terminal 16 extending in the X direction is bent in the Z direction. The distal end portion 16b on the distal end side of the positioning portion 16a of the control terminal 16 extends in the Z direction. The lower mold 11 is provided with a positioning recess 11d deeper than the terminal recess 11b. The positioning recess 11 d may be formed so as to penetrate the lower mold 11. The positioning recess 11d is located at the + X side end of the terminal recess 11b. Also in this configuration, positioning can be easily performed as in the second embodiment.

  Further, as in the second embodiment, the positioning portion 16a can be used for press-fitting. For example, when the control terminal 16 is press-fitted into the control board 23, the control terminal 16 is pushed in the direction of the arrow using a press-fitting jig 29 as shown in FIG. For example, the press-fitting jig 29 applies a load to the bent portion serving as the positioning portion 16a. As a result, the distal end portion 16 b is inserted into the through hole of the control board 23. Then, the control terminal 16 is pressed into the hole of the control board by pressing the control terminal 16 into the hole of the control board 23 with the press-fitting jig 29. The semiconductor device 10 is fixed and connected to the control board 23. By doing in this way, the control terminal 16 can be simply press-fitted and fixed to the control board 23. Furthermore, electrical connection can be reliably performed, and the occurrence of poor connection or the like can be prevented. Therefore, the same effect as in the second embodiment can be obtained.

  In addition, the structure of the positioning part 16a and the positioning recessed part 11d is not restricted to the structure of Embodiment 2, 3. FIG. That is, the positioning portion 16a can be formed by providing the control terminal 16 with various shapes of irregularities and bends. The positioning recess 11d has a shape and size corresponding to the positioning portion 16a. A terminal recess 11b and a positioning recess 11d that can accommodate the control terminal 16 having the positioning portion 16a are formed in the lower mold 11. By doing so, it is possible to easily position the control terminal 16 in the lower mold 11. Furthermore, the convex portion and the bent portion can be used as a load application portion that applies the load of the press-fitting jig 29. Therefore, press-fitting can be easily performed.

Embodiment 4 FIG.
A semiconductor device and a manufacturing method thereof according to the fourth embodiment will be described. FIG. 23 is a plan view showing the configuration of the semiconductor device before sealing. In FIG. 23, the semiconductor device in a state of being disposed in the lower mold 11 is shown. In FIG. 23, the lower mold 11 is omitted.

  In the present embodiment, in addition to the configuration of the second embodiment, a connecting portion 16 c is provided on the control terminal 16. The connecting portion 16c is formed along the Y direction and connects adjacent control terminals 16. The connecting portion 16 c serves as a tie bar that connects the plurality of control terminals 16. The control terminal 16 having the connecting portion 16 c is installed in the terminal recess 11 b of the lower mold 11. At this time, the terminal recess 11b of the lower mold 11 has a shape corresponding to the connecting portion 16c so as to accommodate the connecting portion 16c.

  And in the state which the connection part 16c has connected the some control terminal 16, as shown in Embodiment 1, resin sealing is performed. The connecting portion 16 c is exposed outside the sealing resin 18. After resin sealing, the connecting portion 16c is cut by tie bar cutting. That is, the upper mold 21 and the lower mold 11 are opened, and the semiconductor device in which the semiconductor element and the bonding wire are sealed with the sealing resin 18 is taken out. After opening the lower mold 11 and the upper mold 21, the plurality of control terminals 16 are separated by cutting the connecting portion 16c. Thereby, each control terminal 16 becomes an independent terminal. By doing in this way, the process of installing the some control terminal 16 in the recessed part 11b for terminals can each be simplified. Since the control terminal 16 connected in the connecting portion 16c may be disposed in the terminal recess 11b, it is not necessary to install the control terminal 16 for each of the plurality of terminal recesses 11b.

  Although the cutting process of the connection part 16c is needed, the frequency | count of installing the control terminal 16 can be reduced and productivity can be improved. Further, the connecting portion 16c functions as the positioning portion 16a shown in the second and third embodiments. Thereby, it can position easily.

  Moreover, the connection part 16c is cut | disconnected so that a convex part may be left. Thereby, similarly to Embodiment 2, 3, the weight application part which applies the weight of the jig | tool 29 for press fit can be formed. That is, a load can be applied to the positioning portion 16a. Therefore, as shown in the second and third embodiments, the control terminal 16 can be easily press-fitted into the hole of the control board 23. In this case, for example, the connecting portion 16c may be cut so that the control terminal 16 has the shape shown in the second embodiment.

Comparative Example 1
Next, Comparative Example 1 for the semiconductor device manufacturing method according to the present embodiment will be described. In Comparative Example 1, a manufacturing method using the lead frame 40 shown in FIG. 13 will be described. Hereinafter, the manufacturing method according to Comparative Example 1 will be described with reference to FIGS. In Comparative Example 1, since a press-fit terminal is used, the semiconductor device 30 is press-fit connected to the control board.

  First, as shown in FIG. 24, a lead frame 40 having a first frame 41 and a second frame 42 is prepared. The lead portion 47 corresponds to the control terminal 16, and the terminal portion 44 corresponds to the terminal 12a. A plurality of lead portions 47 extending in the X direction are connected by a tie bar 46. When the press-fit connection is performed, the second frame 42 is formed of a spring material. On the other hand, the first frame 41 having the heat sink portion 45 is formed of a copper material having high thermal conductivity. The first frame 41 and the second frame 42 are fixed by a fixing portion 43. For fixing in the fixing portion 43, caulking, ultrasonic bonding, or the like is used.

  Then, as shown in FIG. 25, the semiconductor elements 33 and 34 are bonded to the heat sink portion 45. For example, the semiconductor elements 33 and 34 are fixed to the heat sink portion 45 by soldering. Next, as shown in FIG. 26, the semiconductor element 33 is connected to the lead portion 47 by the bonding wire 35. In this state, since the first frame 41 and the second frame 42 are fixed, the relative position of the lead portion 47 with respect to the semiconductor element 13 does not change. Therefore, generation of stress on the bonding wire 35 can be suppressed, and damage to the bonding wire 35 can be prevented.

  After wire bonding, the resin is put into a molding machine and the sealing resin 38 is injected into a mold (not shown), as shown in FIG. The heat sink 45, the semiconductor element 33, the semiconductor element 34, and the bonding wire 35 are covered with a sealing resin 38. The outer peripheral portion of the lead frame 40 is exposed from the sealing resin 38. When the resin is sealed and removed from the mold and tie bar cutting is performed, the result is as shown in FIG. In FIG. 28, unnecessary portions of the lead frame 40 are removed. In FIG. 28, the configuration covered with the sealing resin 38 is also illustrated for clarity of explanation.

  When the lead portion 47 is cut from the tie bar 46 and the second frame 42, the portion that was the lead portion 47 becomes the control terminal 36. Further, the terminal portion 44 is cut from the first frame 41 to become the terminal 32a. Thus, the control terminal 36 and the terminal 32a are exposed to the outside of the sealing resin 38.

  Further, the semiconductor device 30 has a cutting part 39. The cutting part 39 will be described. In order to separate the heat sink portion 45 from the lead frame 40, it becomes necessary to perform tie bar cutting after resin sealing. That is, if the heat sink portion 45 is connected to the lead frame 40, the lead portion 47 is short-circuited, and therefore, it is necessary to cut and remove unnecessary portions of the lead frame 40. For example, it is necessary to cut the heat sink portion 45 from the outer peripheral portion of the lead frame 40 in the vicinity of the fixing portion 43 shown in FIG. It is necessary to separate the heat sink part 45 from the lead frame 40 except for the terminal part 44. Further, it is necessary to separate the lead portion 47 from the tie bar 46 and the second frame 42.

  For this reason, as shown in FIG. 28, the cutting part 39 exists outside the sealing resin 38 except for the control terminal 36 and the terminal 32a. Since a cutting process is performed after resin sealing, the cutting part 39 is exposed to the outside of the sealing resin 38. In FIG. 28, the portion extending in the Y direction from the heat sink portion 45 is a cut portion 39. Thus, the cutting part 39 exists in places other than the control terminal 36 and the terminal part 32a. Since the cut portion 39 has a configuration in which a copper material or the like protrudes from the sealing resin 38, some kind of insulation treatment is required. On the other hand, in the semiconductor device 10 according to the present embodiment, as shown in FIG.

Comparative Example 2
In Comparative Example 2, a manufacturing method using the lead frame 40 will be described with reference to FIGS. In addition, description is abbreviate | omitted about the process similar to Embodiment or the comparative example 1. FIG.

  First, a lead frame 40 is prepared as shown in FIG. In Comparative Example 2, a semiconductor device 10 that is connected to a control board by soldering without using a press-fit terminal will be described. Therefore, the lead frame 40 does not have two frames made of different materials. In other words, the lead frame 40 can be formed by press molding a pure copper material. The lead frame 40 includes a terminal portion 44, a heat sink portion 45, a tie bar 46, and a lead portion 47, and is integrally formed.

  When the semiconductor elements 33 and 34 are soldered to the heat sink portion 45, the result is as shown in FIG. Next, when the semiconductor element 33 is connected to the lead portion 47 by the bonding wire 35, it becomes as shown in FIG. In this state, since the lead frame 40 is not cut, the relative position between the semiconductor element 13 and the lead portion 47 does not shift. Therefore, the stress which damages the bonding wire 35 can be suppressed.

  After wire bonding, it is put into a molding machine and the sealing resin 38 is injected into a mold (not shown), as shown in FIG. The heat sink 45, the semiconductor element 33, the semiconductor element 34, and the bonding wire 35 are covered with a sealing resin 38. After the resin is sealed, it is removed from the mold and cut with a tie bar, as shown in FIG. In FIG. 33, the configuration covered with the sealing resin 38 is also illustrated for clarity of explanation. Thereby, the semiconductor device 30 is completed as in the first comparative example. In Comparative Example 2, since the press-fit terminal is not used, the control terminal 16 is soldered to the control board.

  In Comparative Example 2, similarly to Comparative Example 1, the cut portion 39 protrudes from the sealing resin 38. When the semiconductor device 10 according to the present embodiment is compared with the semiconductor device 30 according to Comparative Examples 1 and 2, the semiconductor device 10 does not have the cutting portion 39. In other words, the heat sink 12 of the semiconductor device 10 has a configuration in which the cut portion 39 is not provided in a portion extending from the sealing resin 18. That is, the terminal 12a protrudes from the sealing resin 18 from the heat sink 12, but the terminal 12a does not have a cut mark due to cutting. As shown in FIG. 9 and the like, in the present embodiment, the sealing resin 18 is provided outside the sealing resin 18 so that there is no cut portion in the portion extending from the heat sink 12. As described above, the sealing resin 18 is configured to seal the semiconductor elements 13 and 14, the bonding wire 15, and the like without a cut portion. Thereby, the semiconductor device 10 with high productivity can be realized. Moreover, since the semiconductor device 10 according to the present embodiment does not need to form a lead frame, the amount of material used can be reduced as compared with the comparative example 2.

  In addition, said Embodiment 1-4 and the modifications 1 and 2 can be combined by arbitrary structures. For example, you may use the joining process concerning the modifications 1 and 2 for Embodiment 2-4.

  As described above, the present invention is not limited to the configurations of the above-described embodiments or examples, and various modifications, corrections, and combinations that can be made by those skilled in the art within the scope of the invention of the claims of the claims of the present application. Of course.

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Lower metal mold | die 11a Concave part 11b Concave part for terminal 11c Concave part for terminal 11d Positioning recessed part 12 Heat sink 12a Terminal 13 Semiconductor element 13a Bonding pad 14 Semiconductor element 15 Bonding wire 16 Control terminal 16a Positioning part 16b Tip part 16c Connection part 18 Sealing Stopping resin 21 Upper mold 22 Sealing resin 23 Control board 29 Press fitting jig 35 Bonding wire 36 Control terminal 41 First frame 42 Second frame 43 Fixing portion 44 Terminal portion 45 Heat sink portion 46 Tie bar 47 Lead portion

Claims (10)

Providing a first mold having a recess and a terminal recess;
Disposing a heat sink in the recess of the first mold, and disposing a control terminal in the terminal recess;
A step of wire bonding a semiconductor element provided on the heat sink to the control terminal in a state where the heat sink is disposed in the first mold;
Superimposing a second mold on the first mold containing the heat sink;
Injecting a sealing resin between the first mold and the second mold;
A step of opening the first mold and the second mold, and taking out the semiconductor element and the bonding wire sealed with the sealing resin. . The control terminal is provided with a positioning part,
The method for manufacturing a semiconductor device according to claim 1, wherein a positioning recess is provided at a position corresponding to the positioning portion of the first mold. A step of connecting the control terminal protruding from the sealing resin to a substrate;
The method of manufacturing a semiconductor device according to claim 2, wherein in the step of connecting to the substrate, the press-fitting jig applies a load to the positioning portion and press-fits the control terminal into the hole of the substrate. A plurality of the control terminals are provided,
A connecting portion for connecting a plurality of the control terminals;
4. The method of manufacturing a semiconductor device according to claim 2, wherein after the first mold and the second mold are opened, the connecting portion is cut to separate the plurality of control terminals. 5.   5. The method of manufacturing a semiconductor device according to claim 1, wherein the heat sink and the semiconductor element are joined in a state where the heat sink is disposed in the recess. A translucent part is provided in the first mold,
The method of manufacturing a semiconductor device according to claim 5, wherein the semiconductor element is soldered to the heat sink by irradiating the heat sink with light through the light transmitting portion.   The method of manufacturing a semiconductor device according to claim 5, wherein the semiconductor element is soldered to the heat sink by induction heating the first mold. A semiconductor element;
A heat sink to which the semiconductor element is bonded;
A bonding wire connected to the semiconductor element;
A control terminal connected to the semiconductor element via the bonding wire;
A sealing resin for sealing the semiconductor element and the bonding wire, and a sealing resin provided so that a part of the control terminal is exposed to the outside,
A semiconductor device in which the sealing resin is provided on the outside of the sealing resin so that there is no cut portion in a portion extending from the heat sink.   The semiconductor device according to claim 8, further comprising a substrate having a hole into which the control terminal is press-fitted. Outside the sealing resin, the control terminal is provided with a bent portion or a convex portion,
The semiconductor device according to claim 9, wherein a tip portion of the bent portion or the convex portion is press-fitted into the hole of the substrate.

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