JP2014151609A - Method for manufacturing an imprint mold and fine uneven pattern formation method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an imprint mold furnished, on one side of a substrate possessing in-plane segments having mutually different thicknesses, with a fine uneven pattern of a high precision based on a dry etching scheme using a plasma and a method for forming, in a high precision on one side of a substrate possessing segments having mutually different thicknesses, a fine uneven pattern based on a dry etching scheme using a plasma.SOLUTION: The provided method for manufacturing an imprint mold 1 by using a substrate 10 including a first dielectric and possessing a first side 10a and a second side 10b opposing the first side 10a in a state where a recessed portion 13 is formed on the second side 10b comprises: a permittivity adjustment member arrangement step of arranging, within the recessed portion 13, a permittivity adjustment member 30 including a second dielectric; and a pattern formation step of forming, on the first side 10a of the substrate 10 where the permittivity adjustment member 30 is arranged within the recessed portion 13, a fine uneven pattern 2 based on a dry etching scheme using a plasma.

Description

  The present invention relates to a method for manufacturing an imprint mold and a method for forming a fine uneven pattern.

  The nanoimprint technology as a microfabrication technology uses a mold member (imprint mold) in which a fine concavo-convex pattern is formed on the surface of a substrate, and transfers the fine concavo-convex pattern to a workpiece such as an imprint resin at the same magnification. This is a pattern formation technique (see Patent Document 1). In particular, with the progress of further miniaturization of wiring patterns and the like in semiconductor devices, nanoimprint technology is gaining more and more attention in semiconductor device manufacturing processes and the like.

  As this nanoimprint technique, an optical imprint technique and a thermal imprint technique are known, and an optical imprint technique is generally used. In optical imprinting, fine uneven patterns can be transferred at low applied pressure at room temperature, and there is no need for heating / cooling cycles like thermal imprinting, so there is no dimensional change due to the heat of the master mold or resin. Compared to thermal imprinting, it is said to be superior in terms of resolution, alignment accuracy, productivity, and the like. For this reason, a quartz substrate that can transmit exposure light in optical imprinting is mainly used as a base material constituting the imprint mold.

  As shown in FIG. 8C, the imprint mold used in the nanoimprint technique has a first side 100a and a second side 100b opposite to the first side 100a. There is known an imprint mold 100 in which a fine uneven pattern 200 is formed on a second side 100b and a depression 130 is formed on a second side 100b (see Patent Document 2). In the imprint mold 100, the first side 100a is constituted by a thin region 140 located substantially at the center of the substrate and a thick region 150 located around the first region 100a. And the pattern area | region 120 in which the fine uneven | corrugated pattern 200 of the 1st side 100a is formed is included in the hollow part 130 in planar view.

  According to the imprint mold 100, the pattern region 120 in which the fine uneven pattern 200 is formed is positioned in the thin region 140, so that when the fine uneven pattern 200 is pressed against the imprint resin as the workpiece, Since the convex shape can be curved toward the first side 100a, the fine uneven pattern 200 can be transferred without trapping bubbles when the imprint resin spreads wet. Further, since the imprint mold 100 can be similarly bent when the imprint mold 100 is pulled away from the imprint resin to which the fine concavo-convex pattern 200 has been transferred, the ease of peeling of the imprint mold 100 from the imprint resin can be improved. it can. Therefore, the fine concavo-convex pattern 200 can be transferred with high accuracy without causing damage or the like of the transfer pattern formed on the imprint resin.

Such an imprint mold 100 can be manufactured as follows.
First, a base material 10 ′ having a recess 130 formed on the second side 100b is prepared. Note that an etching mask 160 having a predetermined opening corresponding to the fine concavo-convex pattern 200 is provided on the first side 100a. And the fine uneven | corrugated pattern 200 is formed in the pattern area | region 120 in the 1st side 100a of the said base material 10 'by dry etching using plasma, and the etching mask 160 is removed (refer FIG. 8).

US Pat. No. 5,772,905 Special table 2009-53651 gazette

  As described above, in the imprint mold 100, the dry side using the reactive plasma is formed on the first side 100a (pattern region 120) of the base material 10 ′ in which the recess 130 is formed on the second side 100b. It is manufactured by forming a fine uneven pattern 200 by etching.

  When the fine concavo-convex pattern 200 is formed by dry etching, the base material 10 ′ is placed between a pair of electrodes (anode and cathode) in the dry etching apparatus. At this time, since the depression 130 is formed on the second side 100b of the base material 10 ′, the thin region 140 portion of the base material 10 ′ is viewed in the thickness direction of the base material 10 ′. It can be regarded as a laminate of the substrate 10 ′ and the gas phase (air). Therefore, the dielectric constant in the thin region 140 portion of the base material 10 ′ is an average dielectric constant of the material (dielectric) constituting the base material 10 ′ and the gas phase (air). On the other hand, the dielectric constant of the thick region 150 portion of the base material 10 ′ is the dielectric constant of the material (dielectric) constituting the base material. Therefore, the dielectric constants of the thin region 140 and the thick region 150 are different. As a result, the etching selectivity in the thin region 140 (particularly, the pattern region 120) of the substrate 10 ′ is deteriorated, the distribution of ions and radicals on the first side 100a (particularly, the pattern region 120) of the substrate 10 ′, Deterioration of uniformity of directivity, deterioration of cross-sectional shape of fine concavo-convex pattern 200 (rise of side wall of fine concavo-convex pattern 200 (deterioration of angle of convex side wall with respect to concave upper surface of fine concavo-convex pattern 200), etc.) There is a problem that accuracy decreases.

  As described above, when a fine uneven pattern is formed by dry etching using plasma on one side of a substrate made of a dielectric material whose thickness is not uniform in the plane, the thickness of the substrate Due to the difference, there is a problem that a gas phase partially exists between the base material and the lower electrode of the dry etching apparatus, and the etching accuracy may be lowered due to a difference in dielectric constant caused by the gas phase.

  In view of such circumstances, the present invention provides a method for producing an imprint mold having a high-precision fine concavo-convex pattern on one side of a substrate having portions with different thicknesses in a plane by dry etching using plasma, and It is an object of the present invention to provide a method for forming a fine concavo-convex pattern with high accuracy on one side of a substrate having portions with different thicknesses by dry etching using plasma.

  In order to solve the above-mentioned problem, the present invention has a first side and a second side facing the first side, and a recess is formed on the second side. A method of manufacturing an imprint mold using a base material including a dielectric material, wherein a dielectric constant adjustment member including a second dielectric material is disposed in the recess, and the dielectric And a pattern forming step of forming a fine concavo-convex pattern by dry etching using plasma on the first side of the base material in which the rate adjusting member is disposed in the recess. A method is provided (Invention 1).

  In the said invention (invention 1), in the planar view of the said base material in which the said 2nd side was located upwards, the area | region where the said fine unevenness | corrugation pattern in the said 1st side is formed of the said hollow part It is preferable to form the fine concavo-convex pattern so as to have a relationship encompassed by the bottom (Invention 2).

  In the above inventions (Inventions 1 and 2), it is preferable that the second dielectric has a dielectric constant substantially equal to that of the first dielectric (Invention 3).

In the present invention, “the dielectric constant is substantially equal” means that the dielectric constant ε1 of one dielectric (first dielectric) and the dielectric constant ε2 of another dielectric (second dielectric) , And having the relationship of the following formula.
0.8 ≦ ε1 / ε2 ≦ 1.2

  In the said invention (invention 1-3), the said dielectric constant adjustment member is smaller than the external shape of the said hollow part in planar view of the said base material which made the said 2nd side located upwards, and the said hollow It is preferable to have a shape similar to the outer shape of the part (Invention 4).

  In the said invention (invention 1-4), the said dielectric constant adjustment member is arrange | positioned so that it may contact | abut to the bottom part of the said hollow part in planar view of the said base material which made the said 2nd side located upwards. (Invention 5)

  In the said invention (invention 1-5), the thickness of the said dielectric constant adjustment member is below the height of the said hollow part in planar view of the said base material which made the said 2nd side located upwards. Is preferable (Invention 6).

  In the said invention (invention 1-6), in the said dielectric constant adjustment member arrangement | positioning process, it is preferable to fix the said dielectric constant adjustment member in the said hollow part using the fixing member which can be fixed in the said hollow part (invention). 7).

  In the said invention (invention 1-7), the said dielectric constant adjustment member may be arrange | positioned in the said hollow part before the said base material is conveyed in the dry etching apparatus which performs the dry etching using plasma. (Invention 8) In a dry etching apparatus that performs dry etching using plasma, the dielectric constant adjusting member may be disposed in the recess (Invention 9).

  Further, the present invention has a first side and a second side opposite to the first side, and plasma is used for the first side in the base material including the first dielectric. A method of forming a fine concavo-convex pattern using a dry etching apparatus that performs dry etching, wherein the dry etching apparatus includes at least an upper electrode and a lower electrode facing the upper electrode, and the base material is Since at least the second side is configured as a non-planar surface, the lower electrode is placed in a direction in which the upper electrode and the lower electrode face each other when placed on the lower electrode in the dry etching apparatus. A dielectric constant adjusting member having a shape in which a gas phase region can exist between the electrodes and including a second dielectric in the gas phase region existing between the base material and the lower electrode And adjust the dielectric constant The first side of the substrate timber is arranged to provide a fine concavo-convex pattern forming method comprising forming said fine concavo-convex pattern by dry etching using plasma (invention 10).

  According to the present invention, by dry etching using plasma, a method for manufacturing an imprint mold having a high-precision fine concavo-convex pattern on one side of a substrate having portions having different thicknesses in the plane, and a thickness of It is possible to provide a method for forming a fine concavo-convex pattern with high accuracy on one side of a substrate having different portions by dry etching using plasma.

FIG. 1 is a process flow diagram schematically showing a method for producing an imprint mold according to an embodiment of the present invention. FIG. 2A is a cut end view showing a schematic configuration of a base material used in one embodiment of the present invention, and FIG. 2B is a bottom view of the base material. FIG. 3 is a cross-sectional view schematically showing the relationship between the recess of the substrate and the dielectric constant adjusting member in one embodiment of the present invention. FIG. 4A is a plan view showing a schematic configuration of a dielectric constant adjusting member in one embodiment of the present invention, and FIG. 4B is a cross-sectional view taken along line AA in FIG. Fig.5 (a) is a top view which shows schematic structure of the shaft body which comprises the fixing jig in one Embodiment of this invention, FIG.5 (b) is sectional drawing of the said shaft body. FIG. 6 is a perspective view showing a schematic configuration of a fixing member constituting the fixing jig in one embodiment of the present invention. FIG. 7 is a partial cross-sectional view schematically showing an operation of fixing the dielectric constant adjusting member in the recessed portion by the fixing jig in the embodiment of the present invention. FIG. 8 is a process flow diagram schematically showing a conventional method for producing an imprint mold.

  An imprint mold manufacturing method according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a process flow diagram schematically showing a method for producing an imprint mold according to the present embodiment, and FIG. 2 is a cut end view showing a substrate used in the present embodiment (FIG. 2A). FIG. 2 is a bottom view (FIG. 2B).

[Base material preparation process]
In the imprint mold manufacturing method according to the present embodiment, as shown in FIG. 1A, first, the imprint mold has a first side 10a and a second side 10b opposite to the first side 10a. A base material 10 having a substantially square shape in plan view, which is made of a first dielectric such as titanium oxide, calcium fluoride, silicon, or resin, is prepared.

  A convex structure (mesa structure) 11 having a substantially square shape in plan view is provided at a substantially center of the first side 10a of the base material 10, and the substantially entire surface (upper surface) of the convex structure 11 in plan view has fine irregularities. This is a pattern region 12 where the pattern 2 is formed. In addition, a substantially circular recess 13 in plan view is formed in the approximate center of the second side 10b. That is, the depression 13 is formed at the approximate center of the second side 10b of the base material 10 so that the approximate center in plan view of the base material 10 is configured as the thin region 14, and the periphery thereof is the thick region 15. Composed.

  As shown in FIG. 2, the convex structure 11 (pattern region 12) and the depression 13 in the base material 10 are in a plan view in which the second side 10 b where the depression 13 is formed is positioned upward. Thus, the convex structure 11 (pattern region 12) is included in the bottom surface portion 13a of the recessed portion 13. That is, the recess 13 is formed on the second side 10b so that the area of the bottom surface 13a is larger than the area defined by the outer shape of the convex structure 11 (pattern region 12).

  In a side view of the base material 10 (see FIG. 2A), the length L (length in the in-plane direction) from the end portion 11e of the convex structure 11 (pattern region 12) to the side wall 13b of the recessed portion 13 is It can be appropriately set within a range of about 5 to 40% of the diameter of the recess 13 in plan view.

The depth D of the dent 13 is such a thickness T _{14 that} the thin region 14 of the substrate 10 can be bent convexly toward the first side 10a during imprinting (transfer, peeling, etc.). Can be set to have For example, the depth D of the recessed portion 13 can be set to about 70 to 90% of the thickness T ₁₅ of the thick region 15 portion of the base material 10.

  In addition, in the 1st side 10a of the base material 10, chromium which has a predetermined opening part (opening part corresponding to the recessed part 21 of the fine uneven | corrugated pattern 2 formed) on the convex structure 11 (pattern area | region 12), An etching mask 16 made of chromium oxide, chromium nitride, silicon oxide, silicon nitride, resist material or the like is formed.

[Dielectric constant adjustment member placement process]
Next, as shown in FIG. 1B, a dielectric constant adjusting member 30 made of a second dielectric material that can reduce the dielectric constant difference in the thickness direction of the entire base material 10 is 13 is arranged. By disposing the dielectric constant adjusting member 30 in the recess 13, the dielectric constant difference between the thin region 14 portion and the thick region 15 portion of the base material 10 can be reduced, resulting from the dielectric constant difference. It is possible to suppress a decrease in etching accuracy.

The dielectric constant ε2 of the second dielectric constituting the dielectric constant adjusting member 30 is substantially equal to the dielectric constant ε1 of the first dielectric contained in the substrate 10. Specifically, it is desirable that the dielectric constant ε1 of the first dielectric and the dielectric constant ε2 of the second dielectric have a relationship represented by the following formula.
0.8 ≦ ε1 / ε2 ≦ 1.2

  In this embodiment, the dielectric constants ε1 and ε2 of the first dielectric and the second dielectric included in the base material 10 and the dielectric constant adjusting member 30 are, for example, a dielectric measurement system (126096 type, Toyo Technica). It is a value measured using a

  The first dielectric and the second dielectric may be the same material or different materials. As the second dielectric, for example, quartz, silicon, anodized, PEEK (polyethyl ether ketone), polyimide, Teflon (registered trademark), vinyl chloride, or the like can be used. In dry etching using plasma, a material (such as quartz, PEEK, or polyimide) that has less plasma generation and less gas generation and gas generation is preferable.

  As shown in FIG. 3, the dielectric constant adjusting member 30 has a plan view outer shape slightly smaller than the plan view outer shape of the recessed portion 13, and is configured to be insertable / removable so as to be disposed in the recessed portion 13. . Further, the dielectric constant adjusting member 30 has a shape substantially similar to the outer shape of the hollow portion 13 in plan view. The plan view outer shape of the dielectric constant adjusting member 30 is substantially similar to the plan view outer shape of the hollow portion 13, so that when the dielectric constant adjusting member 30 is disposed in the hollow portion 13, the hollow portion 13 and the dielectric constant adjusting member are arranged. The volume of the gap with respect to 30 can be further reduced, and the difference in dielectric constant between the thin region 14 and the thick region 15 can be further reduced. In this embodiment, the recess 13 and the dielectric constant adjustment member 30 have a substantially circular shape in plan view, and the planar view diameter of the dielectric constant adjustment member 30 is slightly smaller than the plan view diameter of the recess 13. It is comprised so that it may become.

  As shown in FIG. 4, at least one fixing jig mounting hole 31 is formed on one surface 30a of the dielectric constant adjusting member 30 (in this embodiment, two fixing jig mounting holes 31 are formed. Formed).

  The fixing jig mounting hole 31 includes a bottomed shaft body insertion hole 32 having a substantially circular shape in plan view, and a fixing member insertion hole 33 penetrating from the side wall 32a of the shaft body insertion hole 32 toward the side wall 301 of the dielectric constant adjusting member 30. It consists of.

  The shaft body insertion hole 31 is capable of inserting a shaft body 41 in a fixing jig 40 described later (see FIG. 5), and has a hole diameter that allows the shaft body 41 to rotate (the same as the longest diameter of the shaft body 41). Or a slightly larger diameter). Further, the fixing member insertion hole 32 has a hole diameter (the diameter of the fixing member 42 and the diameter of the fixing member 42) so that the fixing member 42 in the fixing jig 40 described later (see FIG. 6) can move in the fixing member insertion hole 32 in the axial direction. Have the same or slightly larger diameter).

  The fixing jig 40 has a columnar shape having a first surface 41a having a shape in which two arcs 411 and 412 having different curvature radii are connected to each other in plan view, and a second surface 41b facing the first surface 41a. The shaft body 41 and a substantially cylindrical fixing member 42 (see FIGS. 5 to 7). A fitting groove 413 for facilitating the rotation of the shaft body 41 is formed on the first surface 41 a of the shaft body 41.

  As shown in FIG. 7, the fixing member 42 is inserted into the fixing member insertion hole 32, and the dielectric constant adjusting member 30 in which the shaft body 41 is inserted into the shaft body insertion hole 31 is disposed in the recessed portion 13. At this time, the shaft body 41 is inserted into the shaft body insertion hole 31 such that the side wall on the side of the arc 411 having a large curvature radius faces the fixing member insertion hole 32 side. Then, when a screwdriver or the like is fitted in the fitting groove 413 and the shaft body 41 is rotated about 90 degrees, the fixing member 42 that contacts the side wall of the shaft body 41 moves toward the side wall 13b of the recessed portion 13, It abuts on the side wall 13b of the recess 13. Thereby, the dielectric constant adjusting member 30 can be fixed in the hollow portion 13, and the dielectric constant adjusting member 30 can be prevented from falling off the hollow portion 13 when the base material 10 is conveyed.

  The fixing jig 40 (the shaft body 41 and the fixing member 42) is exposed to a dry etching environment using plasma in a state where the dielectric constant adjusting member 30 is fixed to the hollow portion 13 of the base material 10, as will be described later. Become. Therefore, it is preferable that the fixing jig 40 is made of a material having plasma resistance and low outgassing properties. Examples of such a material include polyimide (product name: Vespel (registered trademark), manufactured by DuPont), PEEK, and the like.

  As shown in FIG. 1B, the dielectric constant adjusting member 30 is disposed so that the other surface 30 b facing the one surface 30 a of the dielectric constant adjusting member 30 is in contact with the bottom surface portion 13 a of the recessed portion 13. It is preferable. The strength of the base material 10 is reduced by forming the recess 13 on the second side 10b, and the thin region 14 is particularly easily deformed, but the other surface 30b of the dielectric constant adjusting member 30 is the recess. The thin region 14 can be supported by the dielectric constant adjusting member 30 when the base material 10 is transported.

The thickness T ₃₀ (see FIG. 3) of the dielectric constant adjusting member 30 is set so that the gas phase does not exist as much as possible in the recess 13 when the substrate 10 is placed in the etching apparatus. However, it may be thicker or thinner than the depth D of the dent 13. Preferably, the thickness T ₃₀ of the dielectric constant adjusting member 30 is equal to or less than the depth D of the recessed portion 13, and more preferably slightly thinner than the depth D of the recessed portion 13. When thicker than the depth D of the thickness T ₃₀ is recessed portion 13 of the dielectric constant adjusting member 30, a portion of the disposed in the recess portion 13 permittivity adjusting member 30, the second side 10b of the base 10 When it is placed on the electrode of the dry etching apparatus, it may be difficult to ensure the flatness (parallelism) of the base material 10. Moreover, it is preferable that the planar view outer shape and the thickness T ₃₀ of the dielectric constant adjusting member ₃₀ are set so that the dielectric constant adjusting member 30 occupies 80% or more of the volume of the hollow portion 13.

[Pattern formation process]
Subsequently, as shown in FIG. 1C, the base material 10 in which the dielectric constant adjusting member 30 is disposed and fixed in the recess 13 is conveyed into a dry etching apparatus using plasma, and plasma is used. The fine uneven pattern 2 is formed in the pattern region 12 by dry etching. Thereafter, the etching mask 16 is removed, and the dielectric constant adjusting member 30 is removed from the inside of the recessed portion 13, whereby the imprint mold 1 in which the fine concavo-convex pattern 2 is formed in the pattern region 12 can be manufactured (FIG. 1 (d)).

The dry etching apparatus used in the present embodiment includes a chamber, and an upper electrode and a lower electrode disposed in the chamber. In this dry etching apparatus, an etching gas such as CF ₄ introduced into the chamber is ionized by reactive plasma generated in the chamber. Then, reactive species such as ions and radicals are attracted to the lower electrode side, and the fine concavo-convex pattern 2 can be formed by a reaction between the reactive species and the substrate 10 placed on the lower electrode.

  In the present embodiment, since the dielectric constant adjusting member 30 is arranged in the recess 13 of the base material 10, the difference in dielectric constant between the thin region 14 portion and the thick region 15 portion of the base material 10 is reduced. ing. Therefore, it is possible to improve the directivity in the thin region 14 portion of ions or the like generated by plasma in the dry etching apparatus, and it is possible to form the fine concavo-convex pattern 2 having a favorable side wall rising angle. Therefore, according to the present embodiment, when the fine uneven pattern is formed by dry etching using plasma, the etching selectivity in the thin region 14 (particularly, the pattern region 12) of the substrate 10 is deteriorated. Deterioration of ion and radical distribution and directivity uniformity on the first side 10a (particularly, the pattern region 12), deterioration of the cross-sectional shape of the fine concavo-convex pattern 2 (deterioration of the rising angle of the side wall of the fine concavo-convex pattern 2) Etc. can be prevented and the etching accuracy can be improved. Therefore, the imprint mold 1 having the fine concavo-convex pattern 2 can be manufactured with high accuracy.

  The embodiment described above is described for facilitating understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

  In the above embodiment, the base material 10 in which the dielectric constant adjusting member 30 is disposed and fixed in the hollow portion 13 is transported into the dry etching apparatus and the pattern forming process is performed. The dielectric constant adjusting member 30 may be disposed in the recess 13 in the dry etching apparatus. For example, the dielectric constant adjusting member 30 is previously placed at a predetermined position on the lower electrode of the dry etching apparatus, the base material 10 is conveyed into the dry etching apparatus, and the dielectric constant adjusting member 30 on the lower electrode is recessed. The base material 10 can be placed on the lower electrode so as to be inserted into the portion 13. In such an embodiment, the dielectric constant adjusting member 30 may not be fixed in the recess 13 by the fixing jig 40, and the fixing jig mounting hole 31 may not be formed in the dielectric constant adjusting member 30.

  In the said embodiment, although the base material 10 which has the convex structure 11 was mentioned as an example, this invention is not limited to such an aspect, and does not have the convex structure 10 (1st side 10a is substantially substantially The present invention can also be applied to a method of manufacturing an imprint mold using the substrate 10 (which is configured on a flat surface).

  In the said embodiment, although the method of manufacturing an imprint mold using the base material 10 in which the hollow part 13 was formed was mentioned as an example, this invention is not limited to such an aspect, For example, the substrate 10 is placed on the lower electrode of the dry etching apparatus using plasma by configuring at least the second side 10b of the substrate 10 to be a non-flat surface (curved shape, corrugated shape, etc.). Sometimes, one surface of the base material 10 (first surface) having such a shape that a gas phase region (space) may exist between the lower electrode and the base material 10 in the direction in which the upper electrode and the lower electrode face each other. The method can be applied to a method of forming a fine uneven pattern on the side 10a). Specifically, a fine uneven pattern is formed on the first side of a substrate having a substantially arcuate or oval cross section, and an optical element (eg, Fresnel lens) having a substantially arcuate or oval cross section. It can also be applied to a fine pattern forming process in the manufacture of In this case, when a substrate having a substantially arcuate or substantially oval cross section is placed on the lower electrode, it exists between the substrate and the lower electrode in the direction in which the upper electrode and the lower electrode face each other. A dielectric constant adjusting member is disposed in the gas phase region (space) and dry etching is performed. Thereby, the fall of the etching precision resulting from the partial dielectric constant difference by presence of the said gaseous-phase area | region (space) can be suppressed.

  EXAMPLES Hereinafter, although an Example etc. are shown and this invention is demonstrated further in detail, this invention is not limited to the following Example etc. at all.

[Example 1]
A base material 10 made of quartz was prepared, in which a convex structure 11 was formed in the approximate center of the first side 10a, and a recess 13 was formed in the approximate center of the second side 10b. In addition, the convex structure 11 is comprised by planar view substantially square shape of 20 mm of sides, and the hollow part 13 is comprised by planar view substantially circular shape of diameter 50mm and depth 4mm. On the first side 10a, an etching mask 16 made of chromium having a thickness of 10 nm and having a predetermined opening formed on the convex structure 11 is formed.

  Next, the dielectric adjustment member 30 made of quartz was disposed and fixed in the recess 13 of the base material 10. The dielectric constant adjusting member 30 has a substantially circular shape in a plan view having a diameter of 49 mm and a thickness of 3.8 mm. The dielectric constant adjusting member 30 has two fixing jig mounting holes 31, and the dielectric constant adjusting member 30 is fixed in the recess 13 by mounting the fixing jig 40 in the fixing jig mounting hole 31. (See FIG. 7).

Then, the base material 10 on which the dielectric constant adjusting member 30 is disposed and fixed in the recess 13 is conveyed to a dry etching apparatus using plasma (product name: MEPS6025), and CF ₄ is used as an etching gas. The imprint mold 1 in which the fine concavo-convex pattern 2 having an aspect ratio = 2 was formed was manufactured by performing dry etching.

  The rising angle of the side wall of the fine concavo-convex pattern 2 of the imprint mold 1 manufactured as described above (the angle of the convex side wall with respect to the top surface of the concave portion of the fine concavo-convex pattern 2) was determined using a field emission transmission electron microscope (HF-3300, Hitachi High-Tech). The angle was 82 degrees.

[Comparative Example 1]
An imprint mold was produced in the same manner as in Example 1 except that the dielectric constant adjusting member 30 was not disposed in the recess 13, and the rising angle of the side wall of the fine uneven pattern of the imprint mold was measured. The angle was 70 degrees.

[Reference example]
An imprint mold was produced in the same manner as in Example 1 except that a quartz substrate having no depression 13 was used as a substrate, and the rising angle of the side wall of the fine uneven pattern of the imprint mold was measured. The angle was 83 degrees.

  In the imprint mold manufactured by Example 1 mentioned above, compared with the imprint mold manufactured by Comparative Example 1, the rising angle of the side wall of the fine uneven pattern was a good result. Further, comparing Example 1 with the reference example, it was confirmed that according to the method of Example 1, it is possible to form a fine concavo-convex pattern that is not inferior at the rising angle of the side wall.

  In the reference example, since the base material in which the hollow portion is not formed is used, it is considered that the dielectric constant is substantially uniform in the plane of the base material. Therefore, according to the method of Example 1, by arranging the dielectric constant adjusting member 30 in the recess 13, the dielectric constant in the surface of the substrate 10 can be made substantially uniform, and the fine uneven pattern is high. It was confirmed that an imprint mold formed with precision can be manufactured.

  The present invention is useful in technical fields that require various fine processing.

DESCRIPTION OF SYMBOLS 1 ... Imprint mold 2 ... Fine uneven | corrugated pattern 10, 10 '... Base material 10a ... 1st side 10b ... 2nd side 13 ... Depression part 30 ... Dielectric constant adjustment member 40 ... Fixing jig (fixing member)

Claims (10)

It has a first side and a second side opposite to the first side, a recess is formed on the second side, and is formed using a base material including a first dielectric. A method for producing a print mold comprising:
A dielectric constant adjusting member disposing step of disposing a dielectric constant adjusting member including a second dielectric in the hollow portion;
An imprint mold comprising: a pattern forming step of forming a fine concavo-convex pattern by dry etching using plasma on a first side of the base material on which the dielectric constant adjusting member is disposed in the recess. Manufacturing method.   In a plan view of the base material in which the second side is positioned above, a region where the fine unevenness pattern is formed on the first side is included in the bottom of the recess. The method for producing an imprint mold according to claim 1, wherein the fine uneven pattern is formed.   The method of manufacturing an imprint mold according to claim 1, wherein the second dielectric has a dielectric constant substantially equal to that of the first dielectric.   In a plan view of the base material in which the second side is positioned above, the dielectric constant adjusting member has a shape smaller than the outer shape of the hollow portion and similar to the outer shape of the hollow portion. The manufacturing method of the imprint mold in any one of Claims 1-3 characterized by the above-mentioned.   The said dielectric constant adjustment member is arrange | positioned so that it may contact | abut to the bottom part of the said hollow part in planar view of the said base material which made the said 2nd side located upwards. The manufacturing method of the imprint mold in any one of.   The thickness of the said dielectric constant adjustment member is below the height of the said hollow part in planar view of the said base material which made the said 2nd side located upwards, The any one of Claims 1-5 characterized by the above-mentioned. A method for producing an imprint mold according to claim 1.   7. The dielectric constant adjusting member disposing step of fixing the dielectric constant adjusting member in the hollow portion using a fixing member that can be fixed in the hollow portion in the step of arranging the dielectric constant adjusting member. Manufacturing method of imprint mold.   The dielectric constant adjusting member is disposed in the recess before the substrate is transported into a dry etching apparatus that performs dry etching using plasma. The manufacturing method of the imprint mold of description.   The method for manufacturing an imprint mold according to claim 1, wherein the dielectric constant adjusting member is disposed in the recess in a dry etching apparatus that performs dry etching using plasma. Dry etching having a first side and a second side facing the first side, and performing dry etching using plasma on the first side of the base material including the first dielectric A method for forming a fine uneven pattern using an apparatus,
The dry etching apparatus has at least an upper electrode and a lower electrode facing the upper electrode,
The base material is configured such that at least the second side is a non-flat surface, so that the upper electrode and the lower electrode face each other when placed on the lower electrode in the dry etching apparatus. In the direction, a gas phase region may exist between the lower electrode and the shape,
In the gas phase region existing between the base material and the lower electrode, a dielectric constant adjusting member including a second dielectric is disposed,
A fine concavo-convex pattern forming method, wherein the fine concavo-convex pattern is formed by dry etching using plasma on a first side of the base material on which the dielectric constant adjusting member is disposed.

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