JP2014120679A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2014120679A
JP2014120679A JP2012276060A JP2012276060A JP2014120679A JP 2014120679 A JP2014120679 A JP 2014120679A JP 2012276060 A JP2012276060 A JP 2012276060A JP 2012276060 A JP2012276060 A JP 2012276060A JP 2014120679 A JP2014120679 A JP 2014120679A
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lead
wire
semiconductor device
coating resin
disconnection
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Susumu Yamada
晋 山田
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device production process of which is prevented from being complicated.SOLUTION: A semiconductor device having leads (10), wires (20) connected electrically with the leads, and a coating resin (30) for covering and protecting all wires and some leads further includes at least one disconnection preventing wire (40) for suppressing occurrence of poor electrical connection of the wire and lead. The disconnection preventing wire is joined to the lead and covered and protected by a coating resin. The joint (41) of the disconnection preventing wire with the lead is located at least between the corner (11) of the lead covered with the coating resin and the connection (21) of the wire with the lead, or between an end face (12) of the lead covered with the coating resin and located at shortest distance to the connection and the connection.

Description

本発明は、リードと、該リードに電気的に接続されるワイヤーと、該ワイヤーの全てとリードの一部を被覆保護する被覆樹脂と、を有する半導体装置に関するものである。   The present invention relates to a semiconductor device having a lead, a wire electrically connected to the lead, and a coating resin that covers and protects all of the wire and a part of the lead.

従来、例えば特許文献１に示されるように、素子搭載部と、複数のリードと、ボンディングワイヤと、封止樹脂と、を有する樹脂封止型半導体装置が知られている。素子搭載部、リード、及び、ボンディングワイヤそれぞれは、少なくともリードの底面が露出される態様で、封止樹脂によって被覆されている。素子搭載部は、半導体チップを搭載しており、複数のリードは、素子搭載部の周囲に設けられている。ボンディングワイヤは、半導体チップの電極パッドとリードのワイヤボンディング部を電気的に接続する機能を果たし、リードにおけるワイヤボンディング部より後方位置に、封止樹脂に食い込み嵌入する屈曲した突出片が設けられている。   Conventionally, for example, as disclosed in Patent Document 1, a resin-encapsulated semiconductor device having an element mounting portion, a plurality of leads, a bonding wire, and an encapsulating resin is known. Each of the element mounting portion, the lead, and the bonding wire is covered with a sealing resin so that at least the bottom surface of the lead is exposed. The element mounting portion is mounted with a semiconductor chip, and a plurality of leads are provided around the element mounting portion. The bonding wire serves to electrically connect the electrode pad of the semiconductor chip and the wire bonding portion of the lead, and a bent protruding piece that bites into the sealing resin is provided at a position behind the wire bonding portion of the lead. Yes.

特開２００１−１４４２４１号公報JP 2001-144241 A

上記したように、特許文献１に示される樹脂封止型半導体装置では、リードにおけるワイヤボンディング部より後方位置に、封止樹脂に食い込み嵌入する屈曲した突出片が設けられている。したがって、応力集中の生じ易い、リードにおける封止樹脂によって覆われた角部や端面の縁部から封止樹脂の剥離が始まったとしても、その剥離の進行が、突出片によって、ワイヤボンディング部に達することが抑制される。これにより、ボンディングワイヤとリードとに電気的接続不良が生じることが抑制される。   As described above, in the resin-encapsulated semiconductor device disclosed in Patent Document 1, a bent projecting piece that bites into and fits into the encapsulating resin is provided at a position behind the wire bonding portion in the lead. Therefore, even if the peeling of the sealing resin starts from the corners or edge portions of the leads covered with the sealing resin, where stress concentration is likely to occur, the peeling progresses to the wire bonding portion by the protruding piece. Reaching is suppressed. Thereby, it is possible to suppress the occurrence of poor electrical connection between the bonding wire and the lead.

しかしながら、上記効果を奏するために、特許文献１に記載の樹脂封止型半導体装置では、リードに、封止樹脂に食い込み嵌入する屈曲した突出片を形成しなくてはならない。このように、リードを特別に成形するため、樹脂封止型半導体装置の製造工程が煩雑となる虞がある。   However, in order to achieve the above effect, in the resin-encapsulated semiconductor device described in Patent Document 1, it is necessary to form a bent projecting piece that bites and fits into the encapsulating resin in the lead. Thus, since the lead is specially formed, the manufacturing process of the resin-encapsulated semiconductor device may be complicated.

そこで、本発明は上記問題点に鑑み、製造工程が煩雑となることが抑制された半導体装置を提供することを目的とする。   In view of the above problems, an object of the present invention is to provide a semiconductor device in which the manufacturing process is suppressed from becoming complicated.

上記した目的を達成するために、本発明は、リード（１０）と、該リードに電気的に接続されるワイヤー（２０）と、該ワイヤーの全てとリードの一部を被覆保護する被覆樹脂（３０）と、を有する半導体装置であって、リードに接合され、被覆樹脂によって被覆保護されており、リードとの接合部位（４１）が、リードにおける被覆樹脂によって被覆された角部（１１）とワイヤーにおけるリードとの接続部位（２１）との間、及び、リードにおける被覆樹脂によって被覆され、接続部位と最短距離にある端面（１２）と接続部位との間の少なくとも一方に位置する断線防止ワイヤー（４０）を少なくとも１つ有し、断線防止ワイヤーによって、ワイヤーとリードとの電気的な接続不良の発生が抑制されていることを特徴とする。   In order to achieve the above object, the present invention provides a lead (10), a wire (20) electrically connected to the lead, and a coating resin (covering and protecting all of the wire and a part of the lead). 30), which is bonded to the lead and is covered and protected by a coating resin, and a bonding portion (41) with the lead is a corner portion (11) covered with the coating resin in the lead. A wire for preventing disconnection between the connection portion (21) of the wire and the lead, and at least one of the connection portion and the end surface (12) which is covered with the coating resin on the lead and is at the shortest distance from the connection portion. It has at least one (40), and occurrence of electrical connection failure between the wire and the lead is suppressed by the disconnection preventing wire.

被覆樹脂（３０）の剥離は、応力集中が生じ易い、リード（１０）における被覆樹脂（３０）によって被覆されたリード（１０）の角部（１１）、及び、リード（１０）における被覆樹脂（３０）によって被覆されたリード（１０）の端面（１２）の縁部それぞれから始まる。この剥離が進行すると、被覆樹脂（３０）の一部が揺れ動き、この動きに起因する応力がワイヤー（２０）に印加される。この結果、ワイヤー（２０）とリード（１０）との間で電気的な接続不良が生じる虞がある。   The peeling of the coating resin (30) is likely to cause stress concentration. The corner (11) of the lead (10) covered with the coating resin (30) in the lead (10) and the coating resin ( 30) starting from each edge of the end face (12) of the lead (10) covered by. When this peeling progresses, a part of the coating resin (30) is swayed, and stress resulting from this movement is applied to the wire (20). As a result, there is a possibility that an electrical connection failure may occur between the wire (20) and the lead (10).

これに対して、本発明では、リード（１０）における被覆樹脂（３０）によって被覆された角部（１１）とワイヤー（２０）におけるリード（１０）との接続部位（２１）との間、及び、リード（１０）における被覆樹脂（３０）によって被覆され、接続部位（２１）と最短距離にある端面（１２）と接続部位（２１）との間の少なくとも一方に断線防止ワイヤー（４０）が接合されている。これによれば、リード（１０）の角部（１１）や縁部それぞれから被覆樹脂（３０）の剥離が始まったとしても、その剥離が、被覆樹脂（３０）におけるワイヤー（２０）を被覆した部位に及ぶことが抑制される。そのため、剥離の進行に起因する応力がワイヤー（２０）に印加されることが抑制され、ワイヤー（２０）がリード（１０）から外れることが抑制される。この結果、ワイヤー（２０）とリード（１０）との間で電気的な接続不良が生じることが抑制される。   On the other hand, in this invention, between the corner | angular part (11) coat | covered with the coating resin (30) in a lead (10), and the connection part (21) of the lead (10) in a wire (20), and The lead wire (10) is covered with the covering resin (30), and the disconnection preventing wire (40) is bonded to at least one of the connection part (21) between the end surface (12) and the connection part (21) at the shortest distance. Has been. According to this, even if peeling of the coating resin (30) started from each of the corner (11) and the edge of the lead (10), the peeling covered the wire (20) in the coating resin (30). It is suppressed from reaching the site. Therefore, it is suppressed that the stress resulting from progress of peeling is applied to a wire (20), and it is suppressed that a wire (20) remove | deviates from a lead (10). As a result, the occurrence of poor electrical connection between the wire (20) and the lead (10) is suppressed.

また、上記したように、被覆樹脂（３０）の剥離を抑制する部材として、断線防止ワイヤー（４０）を採用している。これによれば、ワイヤー（２０）とともに断線防止ワイヤー（４０）を形成することができる。そのため、リード（１０）を特別に成形することで、被覆樹脂（３０）の剥離を抑制する部材がリード（１０）に形成された構成とは異なり、製造工程が簡素化される。更に言えば、被覆樹脂（３０）の剥離を抑制する部材として、接着剤などを採用した構成とは異なり、接着剤を塗布して硬化する工程が不要なので、製造工程が簡略化される。このように、上記したいずれの比較構成と比べても、本発明に記載の半導体装置は、製造工程が煩雑となることが抑制される。   Moreover, as above-mentioned, the disconnection prevention wire (40) is employ | adopted as a member which suppresses peeling of coating resin (30). According to this, a disconnection prevention wire (40) can be formed with a wire (20). Therefore, by forming the lead (10) specially, the manufacturing process is simplified, unlike the configuration in which the member that suppresses the peeling of the coating resin (30) is formed on the lead (10). Furthermore, unlike the configuration in which an adhesive or the like is used as a member that suppresses peeling of the coating resin (30), a manufacturing process is simplified because a process of applying and curing the adhesive is unnecessary. As described above, even when compared with any of the above-described comparative configurations, the semiconductor device according to the present invention is suppressed from being complicated in manufacturing process.

本発明においては、断線防止ワイヤーにおけるリードとの接合部位は、リードにおける被覆樹脂によって被覆された内面（１０ａ）と被覆樹脂から露出された外面（１０ｂ）との境界（１３）と接続部位との間に位置する構成が好適である。   In the present invention, the connection portion of the wire for preventing disconnection with the lead is the boundary (13) between the inner surface (10a) covered with the coating resin and the outer surface (10b) exposed from the coating resin and the connection portion. A configuration located in between is preferred.

被覆樹脂（３０）の剥離は、外部環境に晒される、リード（１０）における被覆樹脂（３０）によって被覆された内面と被覆樹脂（３０）から露出された外面との境界（１３）から始まる。これに対して、上記構成では、境界（１３）と接続部位（２１）との間に、断線防止ワイヤー（４０）が接合されている。これによれば、境界（１３）から被覆樹脂（３０）の剥離が始まったとしても、その剥離が、被覆樹脂（３０）におけるワイヤー（２０）を被覆した部位に及ぶことが抑制される。そのため、剥離の進行に起因する応力がワイヤー（２０）に印加されることが抑制され、ワイヤー（２０）がリード（１０）から外れることが抑制される。この結果、ワイヤー（２０）とリード（１０）との間で電気的な接続不良が生じることが抑制される。   The peeling of the coating resin (30) starts from the boundary (13) between the inner surface of the lead (10) covered with the coating resin (30) and the outer surface exposed from the coating resin (30), which is exposed to the external environment. On the other hand, in the said structure, the disconnection prevention wire (40) is joined between the boundary (13) and the connection site | part (21). According to this, even if peeling of the coating resin (30) starts from the boundary (13), the peeling is suppressed from reaching the portion of the coating resin (30) that covers the wire (20). Therefore, it is suppressed that the stress resulting from progress of peeling is applied to a wire (20), and it is suppressed that a wire (20) remove | deviates from a lead (10). As a result, the occurrence of poor electrical connection between the wire (20) and the lead (10) is suppressed.

また、本発明においては、リードを複数有し、複数のリードの内の少なくとも１つに、リードよりも被覆樹脂との接着強度が低い導電性部材（６０）を介して半導体チップ（５０）が搭載され、半導体チップの搭載されたリードに複数の断線防止ワイヤーが接合されており、半導体チップの搭載されたリードに接合された複数の断線防止ワイヤーにおけるリードとの接合部位の少なくとも１つは、リードにおける導電性部材が設けられた設置面（１０ｃ）と被覆樹脂によって被覆された内面との境界（１４）と接続部位との間に位置する構成も好適である。   Further, in the present invention, the semiconductor chip (50) has a plurality of leads, and the semiconductor chip (50) is disposed on at least one of the plurality of leads via a conductive member (60) having a lower adhesive strength with the coating resin than the leads. A plurality of disconnection prevention wires are bonded to the leads on which the semiconductor chip is mounted, and at least one of the bonding sites with the leads in the plurality of disconnection prevention wires bonded to the leads on which the semiconductor chip is mounted is: A configuration located between the connection portion and the boundary (14) between the installation surface (10c) where the conductive member of the lead is provided and the inner surface coated with the coating resin is also suitable.

被覆樹脂（３０）の剥離は、被覆樹脂（３０）との接着強度がリード（１０）よりも低い、導電性部材（６０）と被覆樹脂（３０）との界面から始まる。これに対して、上記構成では、リード（１０）における導電性部材（６０）が設けられた設置面（１０ｃ）と被覆樹脂（３０）によって被覆された内面（１０ａ）との境界（１４）と接続部位（２１）との間に、断線防止ワイヤー（４０）が接合されている。これによれば、導電性部材（６０）と被覆樹脂（３０）との界面から被覆樹脂（３０）の剥離が始まったとしても、その剥離が、被覆樹脂（３０）におけるワイヤー（２０）を被覆した部位に及ぶことが抑制される。そのため、剥離の進行に起因する応力がワイヤー（２０）に印加されることが抑制され、ワイヤー（２０）がリード（１０）から外れることが抑制される。この結果、ワイヤー（２０）とリード（１０）との間で電気的な接続不良が生じることが抑制される。   The peeling of the coating resin (30) starts from the interface between the conductive member (60) and the coating resin (30), whose adhesive strength with the coating resin (30) is lower than that of the lead (10). On the other hand, in the above configuration, the boundary (14) between the installation surface (10c) provided with the conductive member (60) in the lead (10) and the inner surface (10a) covered with the coating resin (30). The disconnection prevention wire (40) is joined between the connection part (21). According to this, even if the peeling of the coating resin (30) starts from the interface between the conductive member (60) and the coating resin (30), the peeling covers the wire (20) in the coating resin (30). It is suppressed that it extends to the site. Therefore, it is suppressed that the stress resulting from progress of peeling is applied to a wire (20), and it is suppressed that a wire (20) remove | deviates from a lead (10). As a result, the occurrence of poor electrical connection between the wire (20) and the lead (10) is suppressed.

第１実施形態に係る半導体装置の概略構成を示す上面図である。1 is a top view illustrating a schematic configuration of a semiconductor device according to a first embodiment. 図１のＩＩ−ＩＩ線に沿う断面図である。It is sectional drawing which follows the II-II line | wire of FIG. 図１に示す領域Ａの拡大上面図である。It is an enlarged top view of the area | region A shown in FIG. 半導体装置の変形例を拡大上面図である。It is an enlarged top view of the modification of a semiconductor device. 半導体装置の変形例を拡大上面図である。It is an enlarged top view of the modification of a semiconductor device. 半導体装置の変形例を拡大上面図である。It is an enlarged top view of the modification of a semiconductor device. 半導体装置の変形例を拡大上面図である。It is an enlarged top view of the modification of a semiconductor device. 半導体装置の変形例を拡大上面図である。It is an enlarged top view of the modification of a semiconductor device.

以下、本発明の実施の形態を図に基づいて説明する。
（第１実施形態）
図１〜図３に基づいて、本実施形態に係る半導体装置を説明する。なお、図１〜図３では、断線防止ワイヤー４０におけるリード１０との接合部位４１を黒点によって示す。図３は、図１にて破線で示す領域Ａに相当する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(First embodiment)
The semiconductor device according to the present embodiment will be described with reference to FIGS. In FIG. 1 to FIG. 3, the joint portion 41 with the lead 10 in the disconnection preventing wire 40 is indicated by a black dot. FIG. 3 corresponds to a region A indicated by a broken line in FIG.

図１に示すように、半導体装置１００は、要部として、リード１０と、ワイヤー２０と、被覆樹脂３０と、断線防止ワイヤー４０と、を有する。複数のリード１０それぞれにワイヤー２０が電気的に接続され、ワイヤー２０とリード１０が被覆樹脂３０によって被覆保護されている。半導体装置１００は、上記した要部１０〜４０の他に、半導体チップ５０と導電性部材６０を有しており、半導体チップ５０は、導電性部材６０を介して、リード１０に搭載されている。半導体チップ５０と導電性部材６０それぞれも、被覆樹脂３０によって被覆保護されている。   As shown in FIG. 1, the semiconductor device 100 includes a lead 10, a wire 20, a coating resin 30, and a disconnection prevention wire 40 as main parts. A wire 20 is electrically connected to each of the plurality of leads 10, and the wire 20 and the lead 10 are covered and protected by a coating resin 30. The semiconductor device 100 includes a semiconductor chip 50 and a conductive member 60 in addition to the main parts 10 to 40 described above. The semiconductor chip 50 is mounted on the lead 10 via the conductive member 60. . The semiconductor chip 50 and the conductive member 60 are also covered and protected by the coating resin 30.

複数のリード１０は、リードフレームの一部を被覆樹脂３０によって被覆した後、その連結部位を除去することで、電気的に独立とされたものである。図１に示すように、リード１０は、平面形状が多角形状を成し、複数の角部１１と端面１２を有する。これら複数の角部１１と端面１２それぞれは、被覆樹脂３０によって被覆されている。図２に示すように、リード１０の一部が被覆樹脂３０によって被覆されている。これにより、リード１０における被覆樹脂３０によって被覆された内面１０ａと被覆樹脂３０から露出された外面１０ｂとによって、第１境界１３が形成されている。この第１境界１３は、外部環境に晒されている。   The plurality of leads 10 are made electrically independent by covering a part of the lead frame with the coating resin 30 and then removing the connecting portion. As shown in FIG. 1, the lead 10 has a polygonal shape in plan and has a plurality of corners 11 and end faces 12. Each of the plurality of corner portions 11 and the end surface 12 is covered with a coating resin 30. As shown in FIG. 2, a part of the lead 10 is covered with a coating resin 30. Thereby, the first boundary 13 is formed by the inner surface 10 a covered with the coating resin 30 in the lead 10 and the outer surface 10 b exposed from the coating resin 30. The first boundary 13 is exposed to the external environment.

ワイヤー２０は、複数のリード１０間を電気的に接続するものである。図１に示すように、ワイヤー２０は、半導体チップ５０を介してリード１０間を電気的に接続する。ワイヤー２０が有する２つの端部の内の一方が、リード１０に接合され、残りの端部が、半導体チップ５０に接合されている。以下においては、ワイヤー２０におけるリード１０との接合部位を、接続部位２１と示す。   The wire 20 electrically connects the plurality of leads 10. As shown in FIG. 1, the wire 20 electrically connects the leads 10 via the semiconductor chip 50. One of the two end portions of the wire 20 is bonded to the lead 10, and the remaining end portion is bonded to the semiconductor chip 50. In the following, a joint part of the wire 20 with the lead 10 is referred to as a connection part 21.

被覆樹脂３０は、リード１０、ワイヤー２０、断線防止ワイヤー４０、半導体チップ５０、及び、導電性部材６０それぞれを被覆保護するものである。図２に示すように、被覆樹脂３０は、リード１０の一部、ワイヤー２０の全て、断線防止ワイヤー４０の全て、半導体チップ５０の全て、及び、導電性部材６０の全てを被覆保護する。   The coating resin 30 covers and protects the lead 10, the wire 20, the disconnection prevention wire 40, the semiconductor chip 50, and the conductive member 60. As shown in FIG. 2, the coating resin 30 covers and protects part of the leads 10, all of the wires 20, all of the disconnection prevention wires 40, all of the semiconductor chips 50, and all of the conductive members 60.

断線防止ワイヤー４０は、ワイヤー２０とリード１０との電気的な接続不良の発生を抑制するものである。断線防止ワイヤー４０は、半導体装置１００の特徴点なので、半導体チップ５０と導電性部材６０それぞれを簡単に説明した後に、詳説する。   The disconnection prevention wire 40 suppresses the occurrence of poor electrical connection between the wire 20 and the lead 10. Since the disconnection preventing wire 40 is a characteristic feature of the semiconductor device 100, the semiconductor chip 50 and the conductive member 60 will be described in detail after briefly describing them.

半導体チップ５０は、リード１０とワイヤー２０を介して、外部装置と電気的に信号を送受信するものである。導電性部材６０は、半導体チップ５０とリード１０とを電気的及び機械的に接続するものである。導電性部材６０は、被覆樹脂３０との接着強度が、リード１０よりも低いものであり、具体的に言えば、半田である。   The semiconductor chip 50 electrically transmits and receives signals to and from an external device via the lead 10 and the wire 20. The conductive member 60 connects the semiconductor chip 50 and the lead 10 electrically and mechanically. The conductive member 60 has an adhesive strength with the coating resin 30 that is lower than that of the lead 10. Specifically, the conductive member 60 is solder.

次に、本発明の特徴点である断線防止ワイヤー４０について詳説する。上記したように、断線防止ワイヤー４０は、ワイヤー２０とリード１０との電気的な接続不良の発生を抑制するものである。断線防止ワイヤー４０は、ワイヤー２０とは別部材であり、ワイヤー２０よりも軟らかい材料から成る。そして、断線防止ワイヤー４０は、ワイヤー２０よりも、リード１０との接合強度が高くなっている。ワイヤー２０，４０は、具体的には、ＡｕやＡｌから成り、その接合強度は、接続面積に比例して大きくなる。この接続面積は、ボンディング時の時間に依存する。   Next, the disconnection preventing wire 40 that is a feature of the present invention will be described in detail. As described above, the disconnection preventing wire 40 suppresses the occurrence of poor electrical connection between the wire 20 and the lead 10. The disconnection prevention wire 40 is a separate member from the wire 20 and is made of a material softer than the wire 20. The disconnection preventing wire 40 has a higher bonding strength with the lead 10 than the wire 20. Specifically, the wires 20 and 40 are made of Au or Al, and the bonding strength increases in proportion to the connection area. This connection area depends on the bonding time.

図１〜図３に示すように、本実施形態では、１つのリード１０に対して、複数の断線防止ワイヤー４０が接合されている。断線防止ワイヤー４０は、外部環境に端部が露出され、外部装置と電気的に接続されるリード１０、及び、外部環境に底面が露出され、半導体チップ５０の搭載されたリード１０それぞれに接合されている。   As shown in FIGS. 1 to 3, in the present embodiment, a plurality of disconnection prevention wires 40 are bonded to one lead 10. The disconnection prevention wire 40 has an end exposed to the external environment and is electrically connected to the external device, and a bottom surface exposed to the external environment and joined to the lead 10 on which the semiconductor chip 50 is mounted. ing.

図２に示すように、断線防止ワイヤー４０におけるリード１０との接合部位４１は、第１境界１３と接続部位２１との間に位置する。より詳しく言えば、図３に示すように、接合部位４１は、被覆樹脂３０によって被覆された角部１１と接続部位２１との間、被覆樹脂３０によって被覆され、接続部位２１と最短距離にある端面１２と接続部位２１との間、及び、リード１０における導電性部材６０が設けられた設置面１０ｃと内面１０ａとの第２境界１４と接続部位２１との間、それぞれに位置する。   As shown in FIG. 2, the joint part 41 with the lead 10 in the disconnection preventing wire 40 is located between the first boundary 13 and the connection part 21. More specifically, as shown in FIG. 3, the bonding portion 41 is covered with the coating resin 30 between the corner portion 11 covered with the coating resin 30 and the connection portion 21, and is at the shortest distance from the connection portion 21. It is located between the end surface 12 and the connection site 21, and between the connection surface 21 and the second boundary 14 between the installation surface 10c and the inner surface 10a of the lead 10 where the conductive member 60 is provided.

図３に示すように、１つのリード１０に２つのワイヤー２０が接続され、２つの接続部位２１が設けられている。そして、これら２つの接続部位２１に対して、４つの接合部位４１が対応しており、これら４つの接合部位４１は、１つの断線防止ワイヤー４０によって電気的に接続されている。また、２つの接続部位２１は、断線防止ワイヤー４０とその接合部位４１によって一重に囲まれている。   As shown in FIG. 3, two wires 20 are connected to one lead 10, and two connection portions 21 are provided. Then, four joint parts 41 correspond to these two connection parts 21, and these four joint parts 41 are electrically connected by one disconnection prevention wire 40. Moreover, the two connection parts 21 are surrounded by the disconnection prevention wire 40 and the joining part 41 in a single layer.

図３に示す４つの接合部位４１それぞれを区別するために、時計周りに、４１ａ、４１ｂ、４１ｃ、４１ｄと各接合部位４１に符号を付け、２つの接続部位２１それぞれを区別するために、上から順に２１ａ、２１ｂと各接続部位２１に符号を付けて、以下、接続部位２１ａ，２１ｂと接合部位４１ａ〜４１ｄとの対応関係を説明する。   In order to distinguish each of the four joint parts 41 shown in FIG. 3, the joints 41a, 41b, 41c, 41d and the respective joint parts 41 are labeled clockwise, and the two joint parts 21 are distinguished from each other. 21a and 21b and each connection part 21 are numbered in order, and the correspondence between the connection parts 21a and 21b and the joint parts 41a to 41d will be described below.

図３に示す構成では、紙面上方に位置する接続部位２１ａに対して、紙面左上に位置する接合部位４１ａと紙面右上に位置する接合部位４１ｂとが対応している。すなわち、接合部位４１ａは、第２境界１４と接続部位２１ａとの間、接合部位４１ｂは、一点鎖線で示すように、被覆樹脂３０によって被覆された角部１１と接続部位２１ａとの間に位置している。   In the configuration shown in FIG. 3, the joint part 41 a located on the upper left side of the paper and the joint part 41 b located on the upper right side of the paper correspond to the connection part 21 a located on the upper side of the paper. That is, the joint part 41a is located between the second boundary 14 and the connection part 21a, and the joint part 41b is located between the corner part 11 covered with the coating resin 30 and the connection part 21a, as shown by a one-dot chain line. doing.

そして、紙面下方に位置する接続部位２１ｂに対して、紙面右下に位置する接合部位４１ｃと紙面左下に位置する接合部位４１ｄとが対応している。すなわち、接合部位４１ｃは、二点鎖線の三角形で囲って示すように、被覆樹脂３０によって被覆され、接続部位２１ｂと最短距離にある端面１２と接続部位２１ｂとの間に位置し、接合部位４１ｄは、第２境界１４と接続部位２１ｂとの間に位置している。   Then, with respect to the connection part 21b located on the lower side of the paper surface, the joint part 41c located on the lower right side of the paper surface corresponds to the joint part 41d located on the lower left side of the paper surface. That is, the joint part 41c is covered with the coating resin 30 as shown by being surrounded by a two-dot chain line triangle, and is located between the end face 12 and the connection part 21b at the shortest distance from the connection part 21b. Is located between the second boundary 14 and the connection site 21b.

次に、本実施形態に係る半導体装置１００の作用効果を説明する。被覆樹脂３０の剥離は、応力集中が生じ易い、リード１０の角部１１と端面１２の縁部、外部環境に晒される第１境界１３、被覆樹脂３０との接着強度がリード１０よりも低い、導電性部材６０と被覆樹脂３０との界面（以下、単に界面と示す）から始まる。この剥離が進行すると、被覆樹脂３０の一部が揺れ動き、この動きに起因する応力がワイヤー２０に印加される。この結果、ワイヤー２０とリード１０との間で電気的な接続不良が生じる虞がある。   Next, functions and effects of the semiconductor device 100 according to this embodiment will be described. The peeling of the coating resin 30 is likely to cause stress concentration, and the adhesion strength between the corner portion 11 of the lead 10 and the edge of the end surface 12, the first boundary 13 exposed to the external environment, and the coating resin 30 is lower than that of the lead 10. It starts from the interface between the conductive member 60 and the coating resin 30 (hereinafter simply referred to as the interface). As the peeling progresses, a part of the coating resin 30 swings, and stress resulting from this movement is applied to the wire 20. As a result, there is a possibility that an electrical connection failure may occur between the wire 20 and the lead 10.

これに対して、本実施形態では、断線防止ワイヤー４０におけるリード１０との接合部位４１は、第１境界１３と接続部位２１との間に位置する。より詳しく言えば、接合部位４１は、角部１１と接続部位２１との間、端面１２と接続部位２１との間、及び、界面と内面１０ａとの間である第２境界１４と接続部位２１との間、それぞれに位置する。これによれば、リード１０の角部１１や縁部、第１境界１３、及び、界面それぞれから被覆樹脂３０の剥離が始まったとしても、その剥離が、被覆樹脂３０におけるワイヤー２０を被覆した部位に及ぶことが抑制される。そのため、剥離の進行に起因する応力がワイヤー２０に印加されることが抑制され、ワイヤー２０がリード１０から外れることが抑制される。この結果、ワイヤー２０とリード１０との間で電気的な接続不良が生じることが抑制される。   On the other hand, in this embodiment, the joint part 41 with the lead 10 in the disconnection preventing wire 40 is located between the first boundary 13 and the connection part 21. More specifically, the joint part 41 is between the corner part 11 and the connection part 21, between the end face 12 and the connection part 21, and between the interface and the inner face 10 a and the connection part 21. Between the two. According to this, even if the peeling of the coating resin 30 starts from each of the corner 11 and the edge of the lead 10, the first boundary 13, and the interface, the peeling covers the wire 20 in the coating resin 30. Is suppressed. Therefore, it is suppressed that the stress resulting from progress of peeling is applied to the wire 20, and the wire 20 is prevented from being detached from the lead 10. As a result, an electrical connection failure between the wire 20 and the lead 10 is suppressed.

また、上記したように、被覆樹脂３０の剥離を抑制する部材として、断線防止ワイヤー４０を採用している。これによれば、ワイヤー２０とともに断線防止ワイヤー４０を形成することができる。そのため、リードを特別に成形することで、被覆樹脂の剥離を抑制する部材がリードに形成された構成とは異なり、製造工程が簡素化される。更に言えば、被覆樹脂の剥離を抑制する部材として、接着剤などを採用した構成とは異なり、接着剤を塗布して硬化する工程が不要なので、製造工程が簡略化される。このように、上記したいずれの比較構成と比べても、半導体装置１００は、製造工程が煩雑となることが抑制される。   Further, as described above, the disconnection preventing wire 40 is employed as a member for suppressing the peeling of the coating resin 30. According to this, the disconnection preventing wire 40 can be formed together with the wire 20. Therefore, the manufacturing process is simplified by forming the lead specially, unlike the structure in which the member for suppressing the peeling of the coating resin is formed on the lead. Furthermore, unlike the configuration in which an adhesive or the like is employed as a member that suppresses the peeling of the coating resin, a manufacturing process is simplified because a process of applying and curing the adhesive is unnecessary. Thus, even if it compares with any above-mentioned comparison structure, as for the semiconductor device 100, it is suppressed that a manufacturing process becomes complicated.

接続部位２１は、接合部位４１によって一重に囲まれている。これによれば、特定方向からの被覆樹脂３０の剥離によって、ワイヤー２０がリード１０から外れることが抑制され、ワイヤー２０とリード１０との間で電気的な接続不良が生じることが抑制される。   The connection part 21 is surrounded by the joint part 41 in a single layer. According to this, the peeling of the coating resin 30 from the specific direction suppresses the wire 20 from being detached from the lead 10 and suppresses an electrical connection failure between the wire 20 and the lead 10.

断線防止ワイヤー４０とワイヤー２０とは、別部材である。これによれば、断線防止ワイヤー４０と、ワイヤー２０それぞれの形成材料を適宜採用することができる。   The disconnection preventing wire 40 and the wire 20 are separate members. According to this, the disconnection prevention wire 40 and the formation material of each of the wire 20 can be employ | adopted suitably.

断線防止ワイヤー４０は、ワイヤー２０よりも、リード１０との接合強度が高い。これによれば、断線防止ワイヤーが、ワイヤーよりも、リードとの接合強度が低い構成と比べて、被覆樹脂３０の剥離によって、断線防止ワイヤー４０がリード１０から外れることが抑制される。そのため、被覆樹脂３０の剥離によって、ワイヤー２０がリード１０から外れることが抑制され、ワイヤー２０とリード１０との間で電気的な接続不良が生じることが抑制される。   The disconnection preventing wire 40 has a higher bonding strength with the lead 10 than the wire 20. According to this, it is suppressed that the disconnection prevention wire 40 remove | deviates from the lead 10 by peeling of the coating resin 30 compared with the structure whose joining strength with a lead is lower than a wire. For this reason, the peeling of the coating resin 30 suppresses the wire 20 from being detached from the lead 10, thereby suppressing an electrical connection failure between the wire 20 and the lead 10.

断線防止ワイヤー４０は、ワイヤー２０よりも軟らかい材料から成る。これによれば、断線防止ワイヤーが、ワイヤーよりも硬い材料から成る構成と比べて、被覆樹脂３０の剥離に起因する応力が断線防止ワイヤー４０によって吸収される。そのため、断線防止ワイヤー４０がリード１０から外れることが抑制される。この結果、ワイヤー２０とリード１０との間で電気的な接続不良が生じることが抑制される。   The disconnection prevention wire 40 is made of a softer material than the wire 20. According to this, compared with the structure which a disconnection prevention wire consists of a material harder than a wire, the stress resulting from peeling of the coating resin 30 is absorbed by the disconnection prevention wire 40. Therefore, disconnection prevention wire 40 is prevented from coming off from lead 10. As a result, an electrical connection failure between the wire 20 and the lead 10 is suppressed.

以上、本発明の好ましい実施形態について説明したが、本発明は上記した実施形態になんら制限されることなく、本発明の主旨を逸脱しない範囲において、種々変形して実施することが可能である。   The preferred embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

本実施形態では、接合部位４１が、第１境界１３と接続部位２１との間、角部１１と接続部位２１との間、端面１２と接続部位２１との間、及び、第２境界１４と接続部位２１との間、それぞれに位置する例を示した。しかしながら、接合部位４１は、角部１１と接続部位２１との間、端面１２と接続部位２１との間の少なくとも一方に位置していればよい。   In the present embodiment, the joint part 41 is between the first boundary 13 and the connection part 21, between the corner 11 and the connection part 21, between the end face 12 and the connection part 21, and with the second boundary 14. The example located in each between connection parts 21 was shown. However, the junction part 41 should just be located in at least one between the corner | angular part 11 and the connection part 21, and between the end surface 12 and the connection part 21. FIG.

本実施形態では、接続部位２１が、接合部位４１によって一重に囲まれた例を示した。しかしながら、図４に示すように、接続部位２１は、接合部位４１によって多重（二重）に囲まれた構成を採用することもできる。これによれば、第１実施形態で示した構成と比べて、ワイヤー２０がリード１０から外れることが抑制され、ワイヤー２０とリード１０との間で電気的な接続不良が生じることが抑制される。   In this embodiment, the connection site | part 21 showed the example enclosed by the joining site | part 41 in single. However, as shown in FIG. 4, the connection part 21 may adopt a configuration surrounded by multiple (double) connection parts 41. According to this, compared with the configuration shown in the first embodiment, the wire 20 is suppressed from coming off the lead 10, and an electrical connection failure between the wire 20 and the lead 10 is suppressed. .

本実施形態では、図３に示すように、接続部位２１ａ，２１ｂそれぞれに、専用の接合部位４１ａ〜４１ｄがリード１０に設けられた構成を示した。しかしながら、図４に示すように、接続部位２１ａ，２１ｂそれぞれに対して、少なくとも１つの接合部位４１が対応するように、接合部位４１がリード１０に設けられた構成を採用することもできる。図４に示す例の場合、図４に示す接合部位４１ｅが、接続部位２１ａ，２１ｂそれぞれに対応するものであり、接合部位４１ｅは、第１境界１３と接続部位２１ａ，２１ｂとの間に位置している。また、接合部位４１ｅは、被覆樹脂３０によって被覆され、接続部位２１ａ，２１ｂそれぞれと最短距離にある端面１２と接続部位２１ａ，２１ｂとの間に位置している。これによれば、複数の接続部位２１ａ，２１ｂそれぞれに、専用の断線防止ワイヤー４０だけがリード１０に接合される構成と比べて、接合部位４１の数が低減される。   In the present embodiment, as shown in FIG. 3, a configuration in which dedicated joint portions 41 a to 41 d are provided in the lead 10 in each of the connection portions 21 a and 21 b is shown. However, as shown in FIG. 4, a configuration in which the joint portion 41 is provided in the lead 10 so that at least one joint portion 41 corresponds to each of the connection portions 21 a and 21 b can be adopted. In the case of the example shown in FIG. 4, the joining part 41e shown in FIG. 4 corresponds to each of the connection parts 21a and 21b, and the joining part 41e is located between the first boundary 13 and the connection parts 21a and 21b. doing. Moreover, the joining site | part 41e is coat | covered with the coating resin 30, and is located between the connection part 21a, 21b and the end surface 12 and the connection site | part 21a, 21b in the shortest distance respectively. According to this, compared with the structure in which only the dedicated disconnection prevention wire 40 is joined to the lead 10 in each of the plurality of connection parts 21a and 21b, the number of joint parts 41 is reduced.

本実施形態では、断線防止ワイヤー４０が、ワイヤー２０よりも軟らかい材料から成る例を示した。しかしながら、断線防止ワイヤー４０の材料としては、上記例に限定されず、ワイヤー２０と同一の材料を採用することもできる。   In this embodiment, the example which the wire breakage prevention wire 40 consists of a material softer than the wire 20 was shown. However, the material of the disconnection prevention wire 40 is not limited to the above example, and the same material as that of the wire 20 can also be adopted.

本実施形態では、断線防止ワイヤー４０が、ワイヤー２０よりも、リード１０との接合強度が高い例を示した。しかしながら、断線防止ワイヤー４０とリード１０との接合強度としては、上記例に限定されず、断線防止ワイヤー４０とワイヤー２０それぞれにおけるリード１０との接合強度が互いに等しい構成を採用することもできる。   In the present embodiment, the example in which the disconnection preventing wire 40 has higher bonding strength with the lead 10 than the wire 20 has been shown. However, the bonding strength between the disconnection preventing wire 40 and the lead 10 is not limited to the above example, and a configuration in which the bonding strength between the disconnection preventing wire 40 and the lead 10 in each of the wires 20 is equal to each other may be employed.

本実施形態では、複数の断線防止ワイヤー４０の接合部位４１が電気的に連結されている例を示した。しかしながら、図５に示すように、複数の接合部位４１は電気的に連結されていなくとも良い。   In this embodiment, the example in which the joining site | part 41 of the some disconnection prevention wire 40 was electrically connected was shown. However, as shown in FIG. 5, the plurality of joint portions 41 may not be electrically connected.

本実施形態では、断線防止ワイヤー４０とワイヤー２０とが別部材である例を示した。しかしながら、図６〜図８に示すように、断線防止ワイヤー４０が、ワイヤー２０の一部であっても良い。この場合、ワイヤー２０は、１つの第１接合部位と、少なくとも１つの第２接合部位それぞれとで１つのリードに接合されており、第１接合部位が、ワイヤー２０におけるリード１０との接続部位２１であり、第２接合部位が、断線防止ワイヤー４０（接合部位４１）である。これによれば、第１実施形態で示した構成と比べて、半導体装置１００の製造が簡素化される。また、部品点数の増大が抑制される。   In this embodiment, the example in which the disconnection prevention wire 40 and the wire 20 are separate members has been shown. However, as shown in FIGS. 6 to 8, the disconnection preventing wire 40 may be a part of the wire 20. In this case, the wire 20 is bonded to one lead at one first bonding portion and at least one second bonding portion, and the first bonding portion is a connection portion 21 to the lead 10 in the wire 20. And the 2nd joined part is disconnection prevention wire 40 (joined part 41). This simplifies the manufacture of the semiconductor device 100 as compared to the configuration shown in the first embodiment. In addition, an increase in the number of parts is suppressed.

図６〜図８に示す変形例において、接合部位４１は、接続部位２１よりもリード１０との接合強度が低い構成が良い。これによれば、接続部位が、接合部位よりもリードとの接合強度が高い構成と比べて、被覆樹脂３０の剥離によって、接合部位４１がリード１０から外れた際に、ワイヤー２０に損傷が生じることが抑制される。そのため、ワイヤー２０とリード１０との間で電気的な接続不良が生じることが抑制される。   In the modification shown in FIGS. 6 to 8, the bonding portion 41 preferably has a lower bonding strength with the lead 10 than the connection portion 21. According to this, compared to the configuration in which the connecting portion has a higher bonding strength with the lead than the bonding portion, the wire 20 is damaged when the bonding portion 41 is detached from the lead 10 due to the peeling of the coating resin 30. It is suppressed. Therefore, it is possible to suppress the occurrence of an electrical connection failure between the wire 20 and the lead 10.

１０・・・リード
１１・・・角部
１２・・・端面
２０・・・ワイヤー
２１・・・接続部位
３０・・・被覆樹脂
４０・・・断線防止ワイヤー
４１・・・接合部位
１００・・・半導体装置 DESCRIPTION OF SYMBOLS 10 ... Lead 11 ... Corner | angular part 12 ... End surface 20 ... Wire 21 ... Connection part 30 ... Covering resin 40 ... Disconnection prevention wire 41 ... Joining part 100 ... Semiconductor device

Claims (11)

リード（１０）と、
該リードに電気的に接続されるワイヤー（２０）と、
該ワイヤーの全てと前記リードの一部を被覆保護する被覆樹脂（３０）と、を有する半導体装置であって、
前記リードに接合され、前記被覆樹脂によって被覆保護されており、前記リードとの接合部位（４１）が、前記リードにおける前記被覆樹脂によって被覆された角部（１１）と前記ワイヤーにおける前記リードとの接続部位（２１）との間、及び、前記リードにおける前記被覆樹脂によって被覆され、前記接続部位と最短距離にある端面（１２）と前記接続部位との間の少なくとも一方に位置する断線防止ワイヤー（４０）を少なくとも１つ有し、
前記断線防止ワイヤーによって、前記ワイヤーと前記リードとの電気的な接続不良の発生が抑制されていることを特徴とする半導体装置。 Lead (10);
A wire (20) electrically connected to the lead;
A semiconductor device having a coating resin (30) for covering and protecting all of the wires and a part of the leads,
Bonded to the lead and covered and protected by the coating resin, a joint portion (41) with the lead is formed between the corner portion (11) of the lead covered with the coating resin and the lead of the wire. A wire for preventing disconnection between the connection part (21) and at least one of the connection part and the end face (12) which is covered with the coating resin in the lead and is at the shortest distance from the connection part ( 40) at least one
Occurrence of poor electrical connection between the wire and the lead is suppressed by the disconnection preventing wire. 前記断線防止ワイヤーにおける前記リードとの接合部位は、前記リードにおける前記被覆樹脂によって被覆された内面（１０ａ）と前記被覆樹脂から露出された外面（１０ｂ）との境界（１３）と前記接続部位との間に位置することを特徴とする請求項１に記載の半導体装置。   The connection part with the said lead in the said disconnection prevention wire is the boundary (13) of the inner surface (10a) coat | covered with the said coating resin in the said lead, and the outer surface (10b) exposed from the said coating resin, and the said connection part. The semiconductor device according to claim 1, wherein the semiconductor device is located between the two. 前記リードを複数有し、
複数の前記リードの内の少なくとも１つに、前記リードよりも前記被覆樹脂との接着強度が低い導電性部材（６０）を介して半導体チップ（５０）が搭載され、
前記半導体チップの搭載されたリードに複数の前記断線防止ワイヤーが接合されており、
前記半導体チップの搭載されたリードに接合された複数の前記断線防止ワイヤーにおける前記リードとの接合部位の少なくとも１つは、前記リードにおける前記導電性部材が設けられた設置面（１０ｃ）と前記被覆樹脂によって被覆された内面との境界（１４）と前記接続部位との間に位置することを特徴とする請求項１又は請求項２に記載の半導体装置。 A plurality of the leads;
A semiconductor chip (50) is mounted on at least one of the plurality of leads via a conductive member (60) having a lower adhesive strength with the coating resin than the lead,
A plurality of the disconnection prevention wires are joined to the lead on which the semiconductor chip is mounted,
At least one of the joint portions of the plurality of disconnection prevention wires joined to the lead on which the semiconductor chip is mounted is connected to the installation surface (10c) on the lead where the conductive member is provided and the coating The semiconductor device according to claim 1, wherein the semiconductor device is located between a boundary (14) with an inner surface covered with a resin and the connection portion. １つの前記リードに複数の前記ワイヤーが接続され、複数の前記接続部位が設けられており、
複数の前記接続部位の内の少なくとも２つに対して、少なくとも１つの前記断線防止ワイヤーにおける前記リードとの接合部位が対応するように、複数の前記接合部位が前記リードに設けられていることを特徴とする請求項１〜３いずれか１項に記載の半導体装置。 A plurality of the wires are connected to one lead, and a plurality of the connection portions are provided,
A plurality of joint portions are provided on the lead so that a joint portion with the lead in at least one of the disconnection preventing wires corresponds to at least two of the plurality of connection portions. The semiconductor device according to claim 1, wherein the semiconductor device is characterized in that: １つの前記リードに前記断線防止ワイヤーが複数接合されており、
前記接続部位は、前記断線防止ワイヤーにおける前記リードとの接合部位によって囲まれていることを特徴とする請求項１〜４いずれか１項に記載の半導体装置。 A plurality of the disconnection prevention wires are joined to one lead,
5. The semiconductor device according to claim 1, wherein the connection part is surrounded by a joint part with the lead in the wire for preventing disconnection. 前記接続部位は、前記断線防止ワイヤーにおける前記リードとの接合部位によって多重に囲まれていることを特徴とする請求項５に記載の半導体装置。   The semiconductor device according to claim 5, wherein the connection part is surrounded in multiples by a joint part with the lead in the wire for preventing disconnection. 前記断線防止ワイヤーと前記ワイヤーとは、別部材であることを特徴とする請求項１〜６いずれか１項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the wire for preventing disconnection and the wire are separate members. 前記断線防止ワイヤーは、前記ワイヤーよりも、前記リードとの接合強度が高いことを特徴とする請求項７に記載の半導体装置。   The semiconductor device according to claim 7, wherein the disconnection prevention wire has higher bonding strength with the lead than the wire. 前記断線防止ワイヤーは、前記ワイヤーよりも軟らかい材料から成ることを特徴とする請求項７又は請求項８に記載の半導体装置。   The semiconductor device according to claim 7, wherein the disconnection prevention wire is made of a material softer than the wire. 前記断線防止ワイヤーは、前記ワイヤーの一部であり、
前記ワイヤーは、第１接合部位と、第２接合部位それぞれとで１つの前記リードに接続されており、
前記第１接合部位が、前記ワイヤーにおける前記リードとの接続部位であり、
前記第２接合部位が、前記断線防止ワイヤーであることを特徴とする請求項１〜６いずれか１項に記載の半導体装置。 The disconnection prevention wire is a part of the wire,
The wire is connected to one lead at each of the first joint portion and the second joint portion,
The first bonding site is a connection site with the lead in the wire,
The semiconductor device according to claim 1, wherein the second bonding portion is the wire for preventing disconnection. 前記第２接合部位は、前記第１接合部位よりも前記リードとの接合強度が低いことを特徴とする請求項１０に記載の半導体装置。   The semiconductor device according to claim 10, wherein the second bonding portion has a bonding strength with the lead lower than that of the first bonding portion.
JP2012276060A 2012-12-18 2012-12-18 Semiconductor device Pending JP2014120679A (en)

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DE102022129559A1 (en) 2021-11-25 2023-05-25 Mitsubishi Electric Corporation semiconductor device

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JP2002076228A (en) * 2000-09-04 2002-03-15 Dainippon Printing Co Ltd Resin-sealed semiconductor device
JP2005183417A (en) * 2003-12-16 2005-07-07 Mitsubishi Electric Corp Power semiconductor device
JP2011086943A (en) * 2009-10-15 2011-04-28 Samsung Electronics Co Ltd Semiconductor package, and electronic device and memory storage apparatus using the semiconductor package

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JP2002076228A (en) * 2000-09-04 2002-03-15 Dainippon Printing Co Ltd Resin-sealed semiconductor device
JP2005183417A (en) * 2003-12-16 2005-07-07 Mitsubishi Electric Corp Power semiconductor device
JP2011086943A (en) * 2009-10-15 2011-04-28 Samsung Electronics Co Ltd Semiconductor package, and electronic device and memory storage apparatus using the semiconductor package

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DE102022129559A1 (en) 2021-11-25 2023-05-25 Mitsubishi Electric Corporation semiconductor device

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