JP2014114170A - ダイヤモンド多結晶体およびその製造方法、ならびに工具 - Google Patents
ダイヤモンド多結晶体およびその製造方法、ならびに工具 Download PDFInfo
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- JP2014114170A JP2014114170A JP2012267199A JP2012267199A JP2014114170A JP 2014114170 A JP2014114170 A JP 2014114170A JP 2012267199 A JP2012267199 A JP 2012267199A JP 2012267199 A JP2012267199 A JP 2012267199A JP 2014114170 A JP2014114170 A JP 2014114170A
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- Prior art keywords
- diamond
- ppm
- polycrystalline diamond
- oxide
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 142
- 239000010432 diamond Substances 0.000 title claims abstract description 142
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000002844 melting Methods 0.000 claims abstract description 26
- 230000008018 melting Effects 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 239000011651 chromium Substances 0.000 claims description 51
- 239000002994 raw material Substances 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 239000003575 carbonaceous material Substances 0.000 claims description 22
- 229910002804 graphite Inorganic materials 0.000 claims description 21
- 239000010439 graphite Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 17
- 238000002156 mixing Methods 0.000 claims description 16
- 239000011247 coating layer Substances 0.000 claims description 11
- 239000011572 manganese Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 150000001247 metal acetylides Chemical class 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005299 abrasion Methods 0.000 abstract description 4
- 229910052729 chemical element Inorganic materials 0.000 abstract 1
- 239000000654 additive Substances 0.000 description 11
- 230000000996 additive effect Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
【解決手段】酸化物の融点が1000℃以下である元素が1種以上添加されており、結晶粒の平均粒径が500nm以下である。これにより、ダイヤモンドの摩耗を抑制でき、摺動させたときに長寿命とすることができる。
【選択図】なし
Description
本発明の一の局面におけるダイヤモンド多結晶体の製造方法は、グラファイト原料と、酸化物の融点が1000℃以下である元素を含む混合用材料とを混合して混合物を作製する工程と、混合物を粉砕、混合して炭素材料を作製する工程と、炭素材料をダイヤモンド多結晶体に直接変換する工程とを備える。
上記混合物を作製する工程において、上記混合用原料は、元素の単体、炭化物、および酸化物からなる群から選択される少なくとも1つをグラファイト原料と混合してもよい。
上記被覆層付炭素材料を作製する工程では、スパッタ法によりグラファイト原料の粉末の表面を前記元素で被覆してもよい。上記被覆層付炭素材料を作製する工程では、被覆層は前記元素の単体、炭化物、および酸化物からなる群から選択される少なくとも1つを含んでもよい。上記元素は、ホウ素、ヒ素、クロム、モリブデン、およびマンガンからなる群から少なくとも1つ選択することができる。上記直接変換する工程では、炭素材料を、圧力10GPa以上30GPa以下、温度1500℃以上3000℃以下の条件下で焼結してダイヤモンドに直接的に変換してもよい。
Claims (16)
- 酸化物の融点が1000℃以下である元素が1種以上添加されており、
結晶粒の平均粒径が500nm以下である、ダイヤモンド多結晶体。 - 前記元素の単体、炭化物および酸化物からなる群から選択される少なくとも1つを含み、第1相としての前記結晶粒の粒界に配置された第2相を備える、請求項1に記載のダイヤモンド多結晶体。
- 前記粒界の近傍のヌープ硬度が90GPa以上である、請求項1または2に記載のダイヤモンド多結晶体。
- 前記元素として、クロムが0.05ppm以上50ppm以下添加されている、請求項1〜3のいずれか1項に記載のダイヤモンド多結晶体。
- 前記元素として、モリブデンが20ppm以上60ppm以下添加されている、請求項1〜3のいずれか1項に記載のダイヤモンド多結晶体。
- 前記元素として、マンガンが0.05ppm以上80ppm以下添加されている、請求項1〜3のいずれか1項に記載のダイヤモンド多結晶体。
- 前記元素として、クロムおよびマンガンが合計で0.1ppm以上100ppm以下添加されている、請求項1〜3のいずれか1項に記載のダイヤモンド多結晶体。
- 前記元素として、ホウ素が合計で0.05ppm以上200ppm以下添加されている、請求項1〜3のいずれか1項に記載のダイヤモンド多結晶体。
- 請求項1〜8のいずれか1項に記載のダイヤモンド多結晶体を用いた工具。
- グラファイト原料と、酸化物の融点が1000℃以下である元素を含む混合用原料とを混合して混合物を作製する工程と、
前記混合物を粉砕、混合して炭素材料を作製する工程と、
前記炭素材料を高温高圧条件で、ダイヤモンド多結晶体に直接変換する工程とを備える、ダイヤモンド多結晶体の製造方法。 - 前記混合用原料は、前記元素の単体、炭化物、および酸化物からなる群から選択される少なくとも1つを含む、請求項10に記載のダイヤモンド多結晶体の製造方法。
- グラファイト原料の粉末の表面を、酸化物の融点が1000℃以下である元素を含む被覆層で被覆して、被覆層付炭素材料を作製する工程と、
前記被覆層付炭素材料を、ダイヤモンド多結晶体に直接変換する工程とを備える、ダイヤモンド多結晶体の製造方法。 - 前記被覆層付炭素材料を作製する工程では、スパッタ法により前記グラファイト原料の粉末の表面を前記元素で被覆する、請求項12に記載のダイヤモンド多結晶体の製造方法。
- 前記被覆層付炭素材料を作製する工程では、前記被覆層は前記元素の単体、炭化物、および酸化物からなる群から選択される少なくとも1つを含む、請求項12または13に記載のダイヤモンド多結晶体の製造方法。
- 前記元素は、ホウ素、ヒ素、クロム、モリブデン、およびマンガンからなる群から少なくとも1つ選択される、請求項10〜14のいずれか1項に記載のダイヤモンド多結晶体の製造方法。
- 前記直接変換する工程では、前記炭素材料を、圧力10GPa以上30GPa以下、温度1500℃以上3000℃以下の条件下で焼結してダイヤモンドに直接的に変換する、請求項10〜15のいずれか1項に記載のダイヤモンド多結晶体の製造方法。
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