JP2014096550A - Manufacturing method of frame structure of light-emitting diode (4) - Google Patents

Manufacturing method of frame structure of light-emitting diode (4) Download PDF

Info

Publication number
JP2014096550A
JP2014096550A JP2012267706A JP2012267706A JP2014096550A JP 2014096550 A JP2014096550 A JP 2014096550A JP 2012267706 A JP2012267706 A JP 2012267706A JP 2012267706 A JP2012267706 A JP 2012267706A JP 2014096550 A JP2014096550 A JP 2014096550A
Authority
JP
Japan
Prior art keywords
electrode plate
frame structure
emitting diode
light emitting
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012267706A
Other languages
Japanese (ja)
Other versions
JP5585638B2 (en
Inventor
Yuan Fu Chen
陳原富
jin-feng Zhu
朱振豐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUSHENG IND CO Ltd
FUSHENG INDUSTRIAL CO Ltd
Original Assignee
FUSHENG IND CO Ltd
FUSHENG INDUSTRIAL CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUSHENG IND CO Ltd, FUSHENG INDUSTRIAL CO Ltd filed Critical FUSHENG IND CO Ltd
Publication of JP2014096550A publication Critical patent/JP2014096550A/en
Application granted granted Critical
Publication of JP5585638B2 publication Critical patent/JP5585638B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To significantly reduce manufacture cost by testing a light-emitting diode immediately after resin molding.SOLUTION: A manufacturing method of a frame structure of a light-emitting diode includes: preparing a metal plate material (100); forming a frame structure of a metal runner and a plurality of metal frames in the metal plate material; applying electric plating to the frame structure (104); continuously affixing a sticking tape onto one surface of the frame structure after electric plating (106) for dicing a connection part of the metal frames (108); forming a resin base in the metal frames but releasing the sticking tape after resin base molding (112); and further performing die bonding (114), wire bonding (116), and resin mold production within the resin base. Finally, before hardening the resin, a power supply is applied to the cut connection part of the metal frames, the LED is turned on, and it is inspected whether luminance and chromaticity contrast are correct or not, thereby improving yield of the light-emitting diode.

Description

本発明は発光ダイオードに関し、とりわけ発光ダイオードのフレーム構造の製造方法に関する。 The present invention relates to a light emitting diode, and more particularly to a method for manufacturing a frame structure of a light emitting diode.

発光ダイオードはすでに各種電子装置、家電製品または照明器具などの製品に広く運用されるとともに、発光ダイオードは製作上において高輝度、多色発光および放熱効果に優れた技術で研究開発および改善する方向にあることから、発光ダイオードの製作コストを押し上げている。上記した要因により発光ダイオードの製作コストが嵩む以外に、発光ダイオードの製造における歩留りもまた製造コストに直接影響する。 Light-emitting diodes are already widely used in products such as various electronic devices, home appliances, and lighting equipment, and light-emitting diodes are in the direction of research and development and improvement with technology that is excellent in high luminance, multicolor light emission and heat dissipation effect. This increases the manufacturing cost of light emitting diodes. In addition to increasing the manufacturing cost of the light emitting diode due to the above factors, the yield in manufacturing the light emitting diode also directly affects the manufacturing cost.

従来の発光ダイオードでは製造時において、まず金属製板材を準備し、金属製板材を打ち抜きまたはエッチング工程でフレーム構造を製作した後、当該フレーム構造上にはアノード電極板とカソード電極板とを備えている複数の金属フレームが連結部を介して接続されている金属ランナーを有することになり、さらに熱可塑性樹脂で複数の当該金属フレーム上に樹脂ベースを成型して、当該樹脂ベースの製作が完了した後、当該樹脂ベースの中空機能領域内で露出しているアノード、カソード電極板上にLEDチップのダイボンディングおよびワイヤのボンディング工程を行い、ダイボンディングおよびワイヤボンディング工程の後に、蛍光粉末を混入したシリコーンを当該中空機能領域中に注入し、樹脂モールド工程の後、さらに金属フレームにダイシングおよび検品を行う。 In manufacturing a conventional light emitting diode, a metal plate material is first prepared, a metal plate material is punched out or a frame structure is manufactured by an etching process, and then an anode electrode plate and a cathode electrode plate are provided on the frame structure. A plurality of metal frames having metal runners connected through connecting portions, and further, the resin base is molded on the plurality of metal frames with a thermoplastic resin, and the production of the resin base is completed. Thereafter, the LED chip die bonding and wire bonding steps are performed on the anode and cathode electrode plates exposed in the hollow functional region of the resin base, and the silicone into which the fluorescent powder is mixed after the die bonding and wire bonding steps. Is injected into the hollow functional area, and after the resin molding process, the metal Dicing and inspection-free.

従来の発光ダイオードでは製造が完了しなければ輝度および色度のコントラストの検査はできないことから、発光ダイオードの輝度および色度のコントラストが要求を満たさなくなると、発光ダイオードの歩留りはわずかに50%前後に止まる。それは主に、当該金属フレーム上に樹脂ベースを成型した後、金属フレームのアノード電極板およびカソード電極板の連結部にダイシングを行っていないことから、当該金属フレームのアノード電極板およびカソード電極板はまだ繋がっており、樹脂ベースの中空機能領域は樹脂モールド後に直ちに発光ダイオードの輝度および色度のコントラストの正否を試験できず、全工程完了後でなければ品質を確認できないため、不良品の発光ダイオードをその場で検査できないというところに原因がある。 Since conventional light emitting diodes cannot be inspected for luminance and chromaticity contrast unless they are manufactured, if the luminance and chromaticity contrast of the light emitting diodes do not meet the requirements, the yield of the light emitting diodes is only about 50%. Stop on. The main reason is that after the resin base is molded on the metal frame, the connecting portion between the anode electrode plate and the cathode electrode plate of the metal frame is not diced, so the anode electrode plate and the cathode electrode plate of the metal frame are It is still connected, and the resin-based hollow functional area cannot be tested for correctness of the brightness and chromaticity contrast of the light-emitting diode immediately after resin molding, and the quality cannot be confirmed only after all the processes are completed. The cause is that it cannot be inspected on the spot.

よって、本発明も主な目的は従来の欠点を解決するところにあり、本発明では発光ダイオードのフレーム構造における金属フレーム形成後、まず金属フレームの連結部をダイシングしてフレーム構造の裏面に貼付けテープを貼付け、さらに熱硬化、ダイボンディング、ワイヤボンディングおよび樹脂モールド工程において、樹脂が硬化する前に、前検査作業を行って、発光ダイオードの輝度および色度のコントラストの正否を検査することで、発光ダイオードの製造後の歩留りを90%以上にまで改善して、ひいては製造コストを大幅に削減することができる。 Therefore, the main object of the present invention is to solve the conventional drawbacks. In the present invention, after forming the metal frame in the frame structure of the light emitting diode, first, the connecting portion of the metal frame is diced and attached to the back surface of the frame structure. In addition, in the thermosetting, die bonding, wire bonding, and resin molding process, before the resin is cured, a pre-inspection operation is performed to check whether the luminance and chromaticity contrast of the light emitting diode is correct or not. The yield after manufacturing the diode can be improved to 90% or more, and the manufacturing cost can be greatly reduced.

上記目的を達成するために、本発明では発光ダイオードのフレーム構造の製造方法(四)を提供するものであって、
金属板材を準備し、
前記金属板材には金属ランナーと、複数の金属フレームとを有するフレーム構造が成型されており、前記金属フレーム上には第1の電極板と、第2の電極板とを有しており、前記第1の電極板および前記第2の電極板は前記金属フレームおよび前記金属ランナーを連結する連結部を有しており、
フレーム構造の片面上には貼付けテープが貼付けられており、
前記第1の電極板および前記第2の電極板を連結する連結部をカッティングしつつも、前記貼付けテープは切断せず、
前記金属フレーム上には樹脂ベースが成形されており、成形後の前記樹脂ベースは正面に前記第1の電極板および前記第2の電極板を露出させる中空機能領域を備えており、
前記樹脂ベースの中空機能領域内の第2の電極板上にはLEDチップが実装されており、
ワイヤで前記LEDチップと前記第1の電極板とを電気的に接続し、
樹脂を前記中空機能領域に注入し、
切断された連結部に電源を印加して、前記第1の電極板および前記第2の電極板に通電して前記LEDチップを点灯することで、輝度および色度のコントラスト検査を行う、ことを含む。
In order to achieve the above object, the present invention provides a manufacturing method (4) of a light emitting diode frame structure,
Prepare a metal plate,
The metal plate material has a metal runner and a frame structure having a plurality of metal frames, and has a first electrode plate and a second electrode plate on the metal frame, The first electrode plate and the second electrode plate have a connecting portion for connecting the metal frame and the metal runner,
Adhesive tape is affixed on one side of the frame structure,
While cutting the connecting portion that connects the first electrode plate and the second electrode plate, the adhesive tape is not cut,
A resin base is molded on the metal frame, and the molded resin base includes a hollow functional region that exposes the first electrode plate and the second electrode plate on the front surface.
An LED chip is mounted on the second electrode plate in the resin-based hollow functional region,
Electrically connecting the LED chip and the first electrode plate with a wire;
Injecting resin into the hollow functional area,
Applying power to the cut connection part, energizing the first electrode plate and the second electrode plate to turn on the LED chip, thereby performing a brightness and chromaticity contrast test. Including.

このうち、前記金属ランナー上には間隔を空けて配列された複数の長穴と短穴とを有しており、二つの前記短穴の間には貫通穴を有している。 Among these, the metal runner has a plurality of long holes and short holes arranged at intervals, and has a through hole between the two short holes.

このうち、前記第1の電極板 における前記第2の電極板の末端に隣接または対応する側辺上にはいずれも前記連結部を有している。 Of these, the first electrode plate has the connecting portion on the side adjacent to or corresponding to the end of the second electrode plate.

このうち、前記第1の電極板は長方形であるとともに、前記第2の電極板に隣接または対向する側辺上には対応する二つの切り欠きを有している。 Of these, the first electrode plate is rectangular, and has two corresponding cutouts on the side adjacent to or opposite to the second electrode plate.

このうち、前記第2の電極板の二つの側辺上には対応する二つのトレンチを有しており、前記第2の電極板の他方の側辺には窪みを有している。 Of these, two corresponding trenches are provided on two sides of the second electrode plate, and a depression is provided on the other side of the second electrode plate.

このうち、フレーム構造を打ち抜きまたはエッチングした後、前記フレーム構造の金属フレームに電気メッキを施して金属膜を成膜する。 Among these, after punching or etching the frame structure, the metal frame of the frame structure is electroplated to form a metal film.

このうち、前記貼付けテープが粘着性を有する粘着テープである。 Among these, the adhesive tape is an adhesive tape having adhesiveness.

このうち、前記樹脂ベースの裏面には、前記第1の電極板および前記第2の電極板を露出させるための二つの開口を有している。 Among these, the back surface of the resin base has two openings for exposing the first electrode plate and the second electrode plate.

このうち、前記樹脂ベースの製作が完了した後、前記貼付けテープを剥がす。 Among these, after the production of the resin base is completed, the sticking tape is peeled off.

このうち、前記LEDチップが単色または多色のチップである。 Among these, the LED chip is a monochromatic or multicolor chip.

このうち、前記ワイヤが金線である。 Of these, the wire is a gold wire.

このうち、前記樹脂がシリコーンである。 Of these, the resin is silicone.

このうち、前記樹脂には蛍光粉末が添加されている。 Among these, fluorescent powder is added to the resin.

上記した金属フレームは樹脂ベースの製作が完了した後に前記金属フレームの連結部のダイシングを行って、発光ダイオードは樹脂モールド後に前検査作業が行えるようになることで、発光ダイオードの歩留りを90%以上にまで改善することができ、不良率の発生を低減することができる。 The above metal frame is diced at the connecting portion of the metal frame after the production of the resin base is completed, and the light emitting diode can be pre-inspected after the resin molding, thereby increasing the yield of the light emitting diode by 90% or more. Thus, the occurrence of a defect rate can be reduced.

本発明の製造手順の概略図。Schematic of the manufacturing procedure of the present invention. 本発明の発光ダイオードのフレーム構造の概略図。The schematic of the frame structure of the light emitting diode of this invention. 図1の一部拡大概略図。FIG. 2 is a partially enlarged schematic view of FIG. 1. 本発明のフレーム構造の側面概略図。The side schematic diagram of the frame structure of the present invention. 本発明のフレーム構造のダイシングの正面概略図。The front schematic of the dicing of the frame structure of this invention. 図5の側面概略図。FIG. 6 is a schematic side view of FIG. 5. 本発明の発光ダイオードのフレーム構造上に樹脂ベースが成型された正面概略図。The front schematic diagram by which the resin base was shape | molded on the frame structure of the light emitting diode of this invention. 本発明の発光ダイオードのフレーム構造上に樹脂ベースが成型された裏面概略図。The back surface schematic diagram by which the resin base was shape | molded on the frame structure of the light emitting diode of this invention. 本発明の発光ダイオードのフレーム構造の樹脂ベース上でダイボンディング、ワイヤボンディングを行う製作概略図。The manufacturing schematic which performs die bonding and wire bonding on the resin base of the frame structure of the light emitting diode of this invention. 本発明の発光ダイオードのフレーム構造の側面概略図。The side schematic diagram of the frame structure of the light emitting diode of the present invention.

ここに本発明の技術内容および詳細な説明に関して、図面を合せて以下のとおり説明する。 Here, the technical contents and detailed description of the present invention will be described as follows with reference to the drawings.

本発明の製造手順、発光ダイオードのフレーム構造および図2の一部拡大概略図である図1、2、3を参照されたい。図示するように、本発明の発光ダイオードのフレーム構造の製造方法(四)は、まず、ステップ100のように金属板材を準備する。 Please refer to FIGS. 1, 2 and 3 which are the manufacturing procedure of the present invention, the frame structure of the light emitting diode, and a partially enlarged schematic view of FIG. As shown in the drawing, in the manufacturing method (4) of the light emitting diode frame structure of the present invention, first, a metal plate material is prepared as in step 100.

ステップ102にて、前記金属板材を打ち抜きまたはエッチングにてフレーム構造10を製作する。前記フレーム構造10は、金属ランナー1と、複数の金属フレーム2とを含む。前記金属ランナー1は、その上に間隔を空けて配列された複数の長穴11と短穴12とを有しており、二つの前記短穴12の間には貫通穴13を有している。前記金属フレーム2上には第1の電極板21と、第2の電極板22と、前記第1の電極板21とを備えており、前記第1の電極板21は長方形であるとともに、前記第2の電極板22に隣接または対向する側辺上に対応する二つの切り欠き211を有しており、前記第2の電極板22の二つの側辺上には対応する二つのトレンチ221を有しており、前記第2の電極板22の他方の側辺は窪み222を有しており、前記側辺のトレンチ221および前記窪み222により前記第2の電極板22を衣服のような形状としている。また、前記第1の電極板21の前記第2の電極板22に隣接または対向する側辺上には連結部23(bar)を有しておらず、残りの三つの側辺はいずれも、前記複数の長手方向および幅方向の金属フレーム2および前記金属ランナー1を連結する連結部23を有している。 In step 102, the frame structure 10 is manufactured by punching or etching the metal plate material. The frame structure 10 includes a metal runner 1 and a plurality of metal frames 2. The metal runner 1 has a plurality of long holes 11 and short holes 12 arranged at intervals on the metal runner 1, and a through hole 13 between the two short holes 12. . A first electrode plate 21, a second electrode plate 22, and the first electrode plate 21 are provided on the metal frame 2, and the first electrode plate 21 is rectangular, Two notches 211 corresponding to the side edges adjacent to or facing the second electrode plate 22 are provided, and two corresponding trenches 221 are formed on the two side edges of the second electrode plate 22. And the other side of the second electrode plate 22 has a recess 222, and the second electrode plate 22 is shaped like clothing by the trench 221 and the recess 222 on the side. It is said. Further, the first electrode plate 21 does not have a connecting portion 23 (bar) on the side adjacent to or opposite to the second electrode plate 22, and the remaining three sides are all It has the connection part 23 which connects the metal frame 2 of the said several longitudinal direction and the width direction, and the said metal runner 1. FIG.

ステップ104にて、フレーム構造10を打ち抜きまたはエッチングした後、前記フレーム構造10の金属フレーム2に電気メッキを施して、前記金属フレーム2上に金属膜を成膜する。 In step 104, the frame structure 10 is punched or etched, and then the metal frame 2 of the frame structure 10 is electroplated to form a metal film on the metal frame 2.

ステップ106にて、フレーム構造10の電気メッキが完了した後、前記フレーム構造10の裏面に貼付けテープ20を貼付ける(図4)。本図面において、前記貼付けテープ20は粘着性を有する粘着テープである。 In step 106, after the electroplating of the frame structure 10 is completed, the affixing tape 20 is affixed to the back surface of the frame structure 10 (FIG. 4). In this drawing, the affixing tape 20 is an adhesive tape having adhesiveness.

ステップ108にて、前記金属フレーム2の長手方向および幅方向の第1の電極板21と第2の電極板22とを連結する連結部23をカッティングしてカッティング溝231を形成しつつも、前記貼付けテープ20は切断しない(図5、6)。 In step 108, while cutting the connecting portion 23 that connects the first electrode plate 21 and the second electrode plate 22 in the longitudinal direction and the width direction of the metal frame 2 to form the cutting groove 231, The adhesive tape 20 is not cut (FIGS. 5 and 6).

ステップ110にて、前記フレーム構造10のダイシングが完了した後、熱硬化性樹脂で熱硬化成型技術を経て、前記金属フレーム2上に樹脂ベース3を成型するが、前記樹脂ベース3の成型後には前記第1の電極板21、第2の電極板22および前記切断されたまたは切断されていない連結部23上を被覆することになる。前記樹脂ベース3の正面は中空機能領域31を備えており、前記中空機能領域31は前記第1の電極板21および前記第2の電極板22を露出させる(図4)。同様に、前記樹脂ベース3の裏面は第1の電極板21および第2の電極板22を露出させるための二つの開口32、33を有しており、前記第1の電極板21および前記第2の電極板22が導通してLEDチップ(図示しない)が点灯したとき、前記開口32、33は前記第1の電極板21および第2の電極板22に放熱作用をもたらす(図8)。 In step 110, after the dicing of the frame structure 10 is completed, the resin base 3 is molded on the metal frame 2 through a thermosetting molding technique using a thermosetting resin. The first electrode plate 21, the second electrode plate 22, and the cut or uncut connection portion 23 are covered. The front surface of the resin base 3 is provided with a hollow functional region 31, and the hollow functional region 31 exposes the first electrode plate 21 and the second electrode plate 22 (FIG. 4). Similarly, the back surface of the resin base 3 has two openings 32 and 33 for exposing the first electrode plate 21 and the second electrode plate 22, and the first electrode plate 21 and the second electrode plate 22 are exposed. When the second electrode plate 22 is conducted and the LED chip (not shown) is lit, the openings 32 and 33 provide a heat radiation action to the first electrode plate 21 and the second electrode plate 22 (FIG. 8).

ステップ112にて、熱硬化の後、貼付けテープ20を剥がす。 In step 112, the adhesive tape 20 is peeled off after thermosetting.

ステップ114にて、貼付けテープ20を剥がした後、前記樹脂ベース3の中空機能領域31にて露出している第2の電極板22上にはLEDチップ4が実装されている(図9)。本図面において、前記LEDチップ4は単色または多色のチップである。 In step 114, after the adhesive tape 20 is peeled off, the LED chip 4 is mounted on the second electrode plate 22 exposed in the hollow functional region 31 of the resin base 3 (FIG. 9). In the drawing, the LED chip 4 is a single-color or multicolor chip.

ステップ116にて、前記LEDチップ4にてワイヤ5を前記中空機能領域31にて露出している第1の電極板21上に接続する。本図面において、前記ワイヤ5は金線である(図9)。 In Step 116, the wire 5 is connected to the LED chip 4 on the first electrode plate 21 exposed in the hollow functional region 31. In the drawing, the wire 5 is a gold wire (FIG. 9).

ステップ118にて、ダイボンディングおよびワイヤボンディング製作が完了した後、樹脂ベース3の中空機能領域31内に樹脂モールド製作を行って、樹脂6を前記中空機能領域31に注入する(図10)。本図面において、前記樹脂はシリコーンである。 In step 118, after die bonding and wire bonding are completed, a resin mold is manufactured in the hollow functional region 31 of the resin base 3, and the resin 6 is injected into the hollow functional region 31 (FIG. 10). In the drawing, the resin is silicone.

ステップ120にて、樹脂モールドの後、発光ダイオードに前検査作業を行うことができるが、いわゆる前検査作業とは樹脂モールドの後、前記樹脂6が硬化する前に、検査者が、切断された連結部23に電圧を印加して、電圧を前記第1の電極板21および前記第2の電極板22上に伝達することで、前記LEDチップ4を点灯して生じた光と前記樹脂6に混入されている蛍光粉末とで混色した後に、形成される色度および輝度が予め設計されている色度および輝度のコントラストの要求に達しているかを検査するというものである。 In step 120, the pre-inspection work can be performed on the light-emitting diode after the resin mold, but the so-called pre-inspection work is that the inspector is cut after the resin mold and before the resin 6 is cured. By applying a voltage to the connecting portion 23 and transmitting the voltage onto the first electrode plate 21 and the second electrode plate 22, the light generated by lighting the LED chip 4 and the resin 6 After color mixing with the mixed fluorescent powder, it is inspected whether the chromaticity and luminance to be formed meet the requirements of the chromaticity and luminance contrast designed in advance.

もし、白色光の発光ダイオードを製造したい場合には、前記LEDチップは青色光とし、さらに中空機能領域31に注入される樹脂6は黄色が混合された蛍光粉末とするものであり、そして樹脂6注入後でまだ硬化していないときに、検査者は連結部23が切断された金属フレーム2の前記第1の電極板21および第2の電極板22上に電源を印加することで、LEDチップ4と黄色の蛍光粉末が混入された樹脂6の輝度および色度のコントラストが正確であるかの検査を行う。 If it is desired to manufacture a white light emitting diode, the LED chip is blue light, and the resin 6 injected into the hollow functional region 31 is a fluorescent powder mixed with yellow, and the resin 6 When the inspector is not yet cured after the injection, the inspector applies power to the first electrode plate 21 and the second electrode plate 22 of the metal frame 2 from which the connecting portion 23 has been cut, so that an LED chip is obtained. The resin 6 mixed with 4 and yellow fluorescent powder is inspected for accuracy in brightness and chromaticity contrast.

上記した金属フレーム2は樹脂ベース3の製作が完了した後に前記金属フレーム2の連結部23のダイシングを行って、発光ダイオードは樹脂モールド後に前検査作業が行えるようになることで、発光ダイオードの歩留りを90%以上にまで改善することができ、不良率の発生を低減することができる。 In the metal frame 2 described above, after the resin base 3 is manufactured, the connecting portion 23 of the metal frame 2 is diced so that the light emitting diode can be pre-inspected after the resin molding. Can be improved to 90% or more, and the occurrence of a defect rate can be reduced.

以上は、本発明の好ましい実施例に過ぎず、本発明の実施範囲を限定するためのものではない。およそ本発明の特許請求の範囲によりなされた均等変化および付加は、いずれも本発明の範囲に含まれる。 The above are only preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Any equivalent changes and additions made approximately in accordance with the claims of the present invention are included in the scope of the present invention.

100〜120 ステップ
10 フレーム構造
1 金属ランナー
11 長穴
12 短穴
13 貫通穴
2 金属フレーム
21 第1の電極板
211 切り欠き
22 第2の電極板
221 トレンチ
222 窪み
23 連結部
231 カッティング溝231
3 樹脂ベース
31 中空機能領域
32、33 開口
4 LEDチップ
5 ワイヤ
6 樹脂
20 貼付けテープ
100 to 120 Step 10 Frame structure 1 Metal runner 11 Long hole 12 Short hole 13 Through hole 2 Metal frame 21 First electrode plate 211 Notch 22 Second electrode plate 221 Trench 222 Recess 23 Connecting portion 231 Cutting groove 231
3 Resin base 31 Hollow functional areas 32 and 33 Opening 4 LED chip 5 Wire 6 Resin 20 Adhesive tape

Claims (13)

発光ダイオードのフレーム構造の製造方法(四)であって、
a)、金属板材を準備し、
b)、前記金属板材には金属ランナーと、複数の金属フレームとを有するフレーム構造が成型されており、前記金属フレーム上には第1の電極板と、第2の電極板とを有しており、前記第1の電極板および前記第2の電極板は前記金属フレームおよび前記金属ランナーを連結する連結部を有しており、
c)、フレーム構造の片面上には貼付けテープが貼付けられており、
d)、前記第1の電極板および前記第2の電極板を連結する連結部をカッティングしつつも、前記貼付けテープは切断せず、
e)、前記金属フレーム上には樹脂ベースが成形されており、成形後の前記樹脂ベースは正面に前記第1の電極板および前記第2の電極板を露出させる中空機能領域を備えており、
f)、前記樹脂ベースの中空機能領域内の第2の電極板上にはLEDチップが実装されており、
g)、ワイヤで前記LEDチップと前記第1の電極板とを電気的に接続し、
h)、樹脂を前記中空機能領域に注入し、
i)切断された連結部に電源を印加して、前記第1の電極板および前記第2の電極板に通電して前記LEDチップを点灯することで、輝度および色度のコントラスト検査を行う、ことを含む、ことを特徴とする発光ダイオードのフレーム構造の製造方法(四)。
A method for manufacturing a light emitting diode frame structure (4),
a) preparing a metal plate,
b) A frame structure having a metal runner and a plurality of metal frames is molded on the metal plate material, and a first electrode plate and a second electrode plate are provided on the metal frame. The first electrode plate and the second electrode plate have a connecting portion for connecting the metal frame and the metal runner,
c) An adhesive tape is affixed on one side of the frame structure,
d), while cutting the connecting portion connecting the first electrode plate and the second electrode plate, the adhesive tape is not cut,
e), a resin base is molded on the metal frame, and the molded resin base has a hollow functional region that exposes the first electrode plate and the second electrode plate on the front surface;
f) an LED chip is mounted on the second electrode plate in the resin-based hollow functional region;
g) electrically connecting the LED chip and the first electrode plate with a wire;
h) injecting resin into the hollow functional area;
i) Applying power to the cut connection part, energizing the first electrode plate and the second electrode plate to turn on the LED chip, thereby performing a brightness and chromaticity contrast test; (4) A method for manufacturing a frame structure of a light emitting diode.
ステップbの前記金属ランナー上には間隔を空けて配列された複数の長穴と短穴とを有しており、二つの前記短穴の間には貫通穴を有している、ことを特徴とする請求項1に記載の発光ダイオードのフレーム構造の製造方法(四)。 The metal runner of step b has a plurality of long holes and short holes arranged at intervals, and has a through hole between the two short holes. The manufacturing method (4) of the flame | frame structure of the light emitting diode of Claim 1 characterized by these. ステップbの前記第1の電極板 における前記第2の電極板の末端に隣接または対応する側辺上にはいずれも前記連結部を有している、ことを特徴とする請求項2に記載の発光ダイオードのフレーム構造の製造方法(四)。 3. The connection portion according to claim 2, wherein each of the first electrode plates in step b has a connecting portion on a side adjacent to or corresponding to an end of the second electrode plate. Manufacturing method of light emitting diode frame structure (four). 前記第1の電極板は長方形であるとともに、前記第2の電極板に隣接または対向する側辺上には対応する二つの切り欠きを有している、ことを特徴とする請求項3に記載の発光ダイオードのフレーム構造の製造方法(四)。 The said 1st electrode plate is a rectangle, and has two corresponding notches on the side which adjoins or opposes the said 2nd electrode plate, The Claim 3 characterized by the above-mentioned. (4) manufacturing method of the light emitting diode frame structure. 前記第2の電極板の二つの側辺上には対応する二つのトレンチを有しており、前記第2の電極板の他方の側辺には窪みを有している、ことを特徴とする請求項4に記載の発光ダイオードのフレーム構造の製造方法(四)。 The second electrode plate has two corresponding trenches on two sides, and the other side of the second electrode plate has a depression. The manufacturing method (4) of the frame structure of the light emitting diode of Claim 4. ステップcの前に、フレーム構造を打ち抜きまたはエッチングした後、前記フレーム構造の金属フレームに電気メッキを施して金属膜を成膜する電気メッキのステップをさらに含む、ことを特徴とする請求項5に記載の発光ダイオードのフレーム構造の製造方法(四)。 6. The method according to claim 5, further comprising an electroplating step of forming a metal film by performing electroplating on the metal frame of the frame structure after punching or etching the frame structure before the step c. A manufacturing method (4) of the light emitting diode frame structure described. ステップcにおける貼付けテープが粘着性を有する粘着テープである、ことを特徴とする請求項6に記載の発光ダイオードのフレーム構造の製造方法(四)。 The method (4) for producing a frame structure of a light emitting diode according to claim 6, wherein the adhesive tape in step c is an adhesive tape having adhesiveness. 前記樹脂ベースの裏面には、前記第1の電極板および前記第2の電極板を露出させるための二つの開口を有している、ことを特徴とする請求項7に記載の発光ダイオードのフレーム構造の製造方法(四)。 8. The light emitting diode frame according to claim 7, wherein the back surface of the resin base has two openings for exposing the first electrode plate and the second electrode plate. Structure manufacturing method (4). ステップcとステップfとの間に、樹脂ベースの製作が完了した後、ステップcの前記貼付けテープを剥がすことを更に含む、ことを特徴とする請求項8に記載の発光ダイオードのフレーム構造の製造方法(四)。 9. The method of manufacturing a light emitting diode frame structure according to claim 8, further comprising removing the adhesive tape in step c after completing the production of the resin base between step c and step f. Method (four). ステップfのLEDチップが単色または多色のチップである、ことを特徴とする請求項9に記載の発光ダイオードのフレーム構造の製造方法(四)。 10. The method of manufacturing a light emitting diode frame structure according to claim 9, wherein the LED chip of step f is a monochromatic or multicolor chip. ステップgのワイヤが金線である、ことを特徴とする請求項10に記載の発光ダイオードのフレーム構造の製造方法(四)。 The method of manufacturing a light emitting diode frame structure according to claim 10, wherein the wire of step g is a gold wire. ステップhの樹脂がシリコーンである、ことを特徴とする請求項11に記載の発光ダイオードのフレーム構造の製造方法(四)。 12. The method (4) for manufacturing a light emitting diode frame structure according to claim 11, wherein the resin in step h is silicone. 前記樹脂には蛍光粉末が添加されている、ことを特徴とする請求項12に記載の発光ダイオードのフレーム構造の製造方法(四)。 The method for manufacturing a frame structure of a light emitting diode according to claim 12, wherein fluorescent powder is added to the resin.
JP2012267706A 2012-11-09 2012-12-06 Manufacturing method of light emitting diode frame structure Active JP5585638B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW101141695A TWI484670B (en) 2012-11-09 2012-11-09 Method for manufacturing led leadframe
TW101141695 2012-11-09

Publications (2)

Publication Number Publication Date
JP2014096550A true JP2014096550A (en) 2014-05-22
JP5585638B2 JP5585638B2 (en) 2014-09-10

Family

ID=50939387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012267706A Active JP5585638B2 (en) 2012-11-09 2012-12-06 Manufacturing method of light emitting diode frame structure

Country Status (2)

Country Link
JP (1) JP5585638B2 (en)
TW (1) TWI484670B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017005247A (en) * 2015-06-09 2017-01-05 日亜化学工業株式会社 Method for manufacturing light-emitting device, and light-emitting device
CN107154453A (en) * 2016-03-04 2017-09-12 日东电工(上海松江)有限公司 Elements assembly temporary fixing sheet and its manufacture method
US10777719B2 (en) 2018-04-10 2020-09-15 Nichia Corporation Base member, and method of manufacturing light emitting device using same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134376A (en) * 2005-11-08 2007-05-31 Akita Denshi Systems:Kk Light emitting diode, and method of manufacturing same
JP2009283653A (en) * 2008-05-22 2009-12-03 Sanyo Electric Co Ltd Light-emitting device and production method therefor
JP2011222868A (en) * 2010-04-13 2011-11-04 Alpha- Design Kk Led element inspection and taping apparatus
WO2012102266A1 (en) * 2011-01-27 2012-08-02 大日本印刷株式会社 Resin-attached lead frame, method for manufacturing same, and lead frame
JP2012146816A (en) * 2011-01-12 2012-08-02 Dainippon Printing Co Ltd Semiconductor device, method for manufacturing the same and lighting apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI237357B (en) * 2003-06-17 2005-08-01 Advanced Semiconductor Eng Singulation method used in leadless packaging process
TWI317999B (en) * 2004-08-10 2009-12-01 Advanced Semiconductor Eng Process and lead frame for making leadless semiconductor packages
WO2006065007A1 (en) * 2004-12-16 2006-06-22 Seoul Semiconductor Co., Ltd. Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method
KR100765241B1 (en) * 2006-12-13 2007-10-09 서울반도체 주식회사 Light emitting diode package with odds of lead fram removed from its surface and method for fabricating the same
TWM366177U (en) * 2009-03-17 2009-10-01 Silitek Electronic Guangzhou Lead frame, package structure and LED package structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134376A (en) * 2005-11-08 2007-05-31 Akita Denshi Systems:Kk Light emitting diode, and method of manufacturing same
JP2009283653A (en) * 2008-05-22 2009-12-03 Sanyo Electric Co Ltd Light-emitting device and production method therefor
JP2011222868A (en) * 2010-04-13 2011-11-04 Alpha- Design Kk Led element inspection and taping apparatus
JP2012146816A (en) * 2011-01-12 2012-08-02 Dainippon Printing Co Ltd Semiconductor device, method for manufacturing the same and lighting apparatus
WO2012102266A1 (en) * 2011-01-27 2012-08-02 大日本印刷株式会社 Resin-attached lead frame, method for manufacturing same, and lead frame

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017005247A (en) * 2015-06-09 2017-01-05 日亜化学工業株式会社 Method for manufacturing light-emitting device, and light-emitting device
CN107154453A (en) * 2016-03-04 2017-09-12 日东电工(上海松江)有限公司 Elements assembly temporary fixing sheet and its manufacture method
US10777719B2 (en) 2018-04-10 2020-09-15 Nichia Corporation Base member, and method of manufacturing light emitting device using same

Also Published As

Publication number Publication date
TWI484670B (en) 2015-05-11
JP5585638B2 (en) 2014-09-10
TW201419586A (en) 2014-05-16

Similar Documents

Publication Publication Date Title
JP2014017460A (en) Method for manufacturing lead frame assembly of light-emitting diode
CN103840071B (en) A kind of LED lamp bar manufacture method and LED lamp bar
US20080151557A1 (en) Light emission diode
JPWO2012011363A1 (en) Light emitting device and manufacturing method thereof
US20100171144A1 (en) Light emitting device package and manufacturing method thereof
JP5585638B2 (en) Manufacturing method of light emitting diode frame structure
JP2009283883A (en) Lead frame assembly for mounting light emitting diode chip, and method of manufacturing the same
KR20100108969A (en) Method for fabricating light emitting diode packang and light emitting diode package
TWI593144B (en) Heterogeneous LED light-emitting components manufacturing process
JP5720957B2 (en) Method for manufacturing light-emitting diode support structure (2)
KR101168854B1 (en) Manufacture method of light emmitting diode package
JP5686262B2 (en) Manufacturing method of light emitting diode lead frame assembly
JP5505735B2 (en) Light-emitting diode support frame structure and manufacturing method thereof (2)
KR20070032426A (en) Light-emitting device and Method of manufacturing the same
US20170077363A1 (en) Method for manufacturing light-emitting diode package
JP5660506B2 (en) Method for manufacturing frame structure of light-emitting diode having thermosetting property
JP2000124507A (en) Surface-mounted light-emitting diode
JP5841325B2 (en) Bare chip mounting surface light emitter
JP2009099590A (en) Method of manufacturing led display
JP2012009530A (en) Surface luminous body with bare chip mounted thereon and method for manufacturing the same
WO2014038169A1 (en) Light-emitting element substrate and method for producing same
JP5931330B2 (en) Bare chip mounting surface light emitter manufacturing method and bare chip mounting surface light emitter
TW201403890A (en) Method for manufacturing LED leadframe
TW201403894A (en) Method for manufacturing LED leadframe
JP2012209417A (en) Processing method and manufacturing method of wiring board, light emitting device and manufacturing method of the light emitting device, and electric apparatus

Legal Events

Date Code Title Description
A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140407

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140423

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140502

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140530

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140617

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140707

R150 Certificate of patent or registration of utility model

Ref document number: 5585638

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250