JP2014080474A - 架橋ポリマー粒子、導電性粒子、異方性導電材料及び回路部材の接続構造体 - Google Patents
架橋ポリマー粒子、導電性粒子、異方性導電材料及び回路部材の接続構造体 Download PDFInfo
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- JP2014080474A JP2014080474A JP2012228073A JP2012228073A JP2014080474A JP 2014080474 A JP2014080474 A JP 2014080474A JP 2012228073 A JP2012228073 A JP 2012228073A JP 2012228073 A JP2012228073 A JP 2012228073A JP 2014080474 A JP2014080474 A JP 2014080474A
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- Polymerisation Methods In General (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
【解決手段】本発明は、ポリメタクリル酸メチルを含有するシード粒子を、下記式(1)で表されるジ(メタ)アクリレート化合物を含有するモノマーを含む乳化液中で膨潤した後、上記モノマーをシード重合して得られる架橋ポリマー粒子であり、平均粒径Dと180℃における圧縮破壊強度Bとが、B(mN)≧[8.3988×D(μm)−15.17(mN)]で表される関係を満足すし、かつ、平均粒径Dが2〜10μmである、架橋ポリマー粒子に関する。式(1)中、R1及びR2はそれぞれ独立に水素原子又はメチル基を示し、L1は炭素数4〜12のアルキレン基を示す。
【選択図】なし
Description
[式(1)中、R1及びR2はそれぞれ独立に水素原子又はメチル基を示し、L1は炭素数4〜12のアルキレン基を示す。]
B(mN)≧[8.3988×D(μm)−15.17(mN)] (2)
本実施形態の架橋ポリマー粒子は、ポリメタクリル酸メチルを含有するシード粒子を、下記式(1)で表されるジ(メタ)アクリレート化合物を含有するモノマーを含む乳化液中で膨潤した後、上記モノマーをシード重合して得られる粒子であり、該架橋ポリマー粒子の平均粒径Dと180℃における圧縮破壊強度Bとが、下記式(2)で表される関係を満足し、かつ、平均粒径Dが2〜10μmである。
B(mN)≧[8.3988×D(μm)−15.17(mN)] (2)
上記シード粒子は、メタクリル酸メチルの重合により得られる粒子である。シード粒子としては、メタクリル酸メチルのホモポリマーであるポリメタクリル酸メチルからなる粒子を用いることができるが、メタクリル酸メチルと他の(メタ)アクリル酸エステルとの共重合により得られるアクリル系樹脂からなる粒子であってもよい。上記アクリル系樹脂は、メタクリル酸メチルをモノマー単位として90mol%以上含むことができる。
架橋ポリマー粒子は、上記シード粒子を、特定のジ(メタ)アクリレート化合物を含有するモノマーを含む乳化液中で膨潤した後、モノマーをシード重合して得られる。シード重合法は、公知の方法を参考にして行うことができる。以下にシード重合法の一般的な方法を説明するが、この方法に限定されるものではない。
1)粒子を、超音波分散装置を使用して水に分散させ、1質量%の粒子を含む分散液を調製する。
2)粒度分布計(シスメックスフロー、シスメックス製)を用いて、上記分散液中の粒子約10万個の画像を走査型電子顕微鏡(SEM)で観察し、平均粒径及び粒径のCv値を算出する。
圧縮回復増加率(%)=[(180℃での圧縮回復率)−(室温での圧縮回復率)]/(室温での圧縮回復率)×100
F:架橋ポリマー粒子が30%圧縮変形したときの荷重(mN)
S:架橋ポリマー粒子が30%圧縮変形したときの圧縮変位(mm)
R:架橋ポリマー粒子の半径(mm)
B(mN)≧[8.3988×D(μm)−15.17(mN)] (2)
本実施形態の導電性粒子は、上記架橋ポリマー粒子と、該架橋ポリマー粒子の表面に形成された金属被膜とを有する。図1は、本実施形態に係る導電性粒子を示す模式断面図である。図1に示すように、導電性粒子10は、架橋ポリマー粒子1と、架橋ポリマー粒子1の表面を被覆している金属被膜(金属層)2とを有する。
本実施形態の異方性導電材料は、上記導電性粒子と、バインダー樹脂とを含む。図2は、本実施形態に係る異方性導電材料を示す模式断面図である。異方性導電材料40は、絶縁性のバインダー樹脂20と、バインダー樹脂20中に分散された導電性粒子10とを備える。
本実施形態に係る回路部材の接続構造体は、第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、第2の回路基板の主面上に第2の回路電極が形成された第2の回路部材と、第1の回路部材と第2の回路部材との間に介在する接続部と、を備える。第2の回路部材は、第2の回路電極が第1の回路電極と対向するように配置されており、接続部は、上記本実施形態に係る導電性粒子を含む。
合成例1
500mLの三口フラスコに、メタクリル酸メチル(MMA)70g、オクタンチオール(OCT)2.1g、ペルオキソ二硫酸カリウム(KPS)0.7g及び水400gを一括して仕込み、70℃のウォーターバスで加熱しながら、攪拌機を用いて約8時間撹拌をして、シード粒子を形成させた。
スチレン(ST)30g、オクタンチオール(OCT)3g、ペルオキソ二硫酸カリウム(KPS)0.5g及び水400gを使用した以外は、合成例1と同様にしてシード粒子を形成させた。
MMAの代わりにアクリル酸ブチル(BA)を使用した以外は合成例1と同様にしてシード粒子を形成した。
MMAの代わりにアクリル酸ヘキシル(HA)を使用した以外は合成例1と同様にしてシード粒子を形成した。
OCTの量を1.4gに変更した以外は合成例1と同様にしてシード粒子を形成した。
OCTの量を0.7gに変更した以外は合成例1と同様にしてシード粒子を形成した。
各合成例で得られたシード粒子の水溶液の遠心分離を行い、上澄みを除去し、除去した上澄み分のイオン交換水を添加した後、再分散させた。上記操作を2回行った後、マイクロトラック法にて遠心分離後のシード粒子の粒径を測定した。また、粒子の分散性は、遠心分離前後の粒径変化が20nm未満の場合を「A」、20〜50nmの場合を「B」、50nmを超える場合を「C」と評価した。
(実施例1)
過酸化ベンゾイル4gをブタンジオールジアクリレート(BDDA)400gに溶解したモノマーを、ドデシル硫酸トリエタノール20.4gが溶解したイオン交換水6800gと混合し、超音波ホモジナイザーで10分間処理して乳化液を調製した。
BDDAの代わりにヘキサンジオールジアクリレート(HDDA)を用いた以外は実施例1と同様にして、架橋ポリマー粒子を合成した。
BDDAの代わりにメチルペンタンジオールジアクリレート(MPDA)を用いた以外は実施例1と同様にして、架橋ポリマー粒子を合成した。
BDDAの代わりにノナンジオールジアクリレート(NDDA)を用いた以外は実施例1と同様にして、架橋ポリマー粒子を合成した。
BDDAの代わりにデカンジオールジアクリレート(DDA)を用いた以外は実施例1と同様にして、架橋ポリマー粒子を合成した。
BDDAの代わりにドデカンジオールジアクリレート(DDDA)を用いた以外は実施例1と同様にして、架橋ポリマー粒子を合成した。
合成例1のシード粒子の分散液の代わりに、合成例5のシード粒子の分散液300g(固形分量1.69g)を用いた以外は実施例1と同様にして、架橋ポリマー粒子を合成した。
合成例1のシード粒子の分散液の代わりに、合成例6のシード粒子の分散液300g(固形分量1.78g)を用いた以外は実施例1と同様にして、架橋ポリマー粒子を合成した。
合成例1のシード粒子の分散液の代わりに、合成例6のシード粒子の分散液300g(固形分量1.34g)を用いた以外は、実施例1と同様にして架橋ポリマー粒子を合成した。
合成例1のシード粒子の分散液300g(固形分4g)に変更した以外は、実施例1と同様にして架橋ポリマー粒子を合成した。
(実施例11)
BDDAの代わりにBDDA82mol%及びMMA18mol%を含むモノマー400gを用いた以外は実施例1と同様にして、架橋ポリマー粒子を合成した。
合成例1のシード粒子の分散液の代わりに、合成例2のシード粒子の分散液300g(固形分量2.46g)を用いた以外は、実施例1と同様にして架橋ポリマー粒子を合成した。
BDDAの代わりにポリテトラメチレングリコールジアクリレート(日立化成社製、商品名「FA−PTG9A」)200g及びジビニルベンゼン(DBV、純度96%)200gを用いた以外は、比較例1と同様にして架橋ポリマー粒子を合成した。
BDDAの代わりにグリセリンプロポキシトリアクリレート(ダイセルサイテック社製、商品名「OTA480」)400gを用いた以外は、実施例1と同様にして架橋ポリマー粒子を合成した。
実施例1〜6及び比較例1〜3で得られた架橋ポリマー粒子表面に、それぞれ厚み0.2μmのニッケル層を無電界めっき法で形成し、さらにそのニッケル層の外側に厚み0.04μmのパラジウム層を形成して、導電性粒子1〜9をそれぞれ作製した。
上記導電性粒子を用いて、異方性導電材料の作製を行った。
作製したフィルム状の異方性導電材料を用いて、金バンプ(面積:30μm×90μm、スペース10μm、高さ:15μm、バンプ数:362)付きチップ(1.7mm×17mm、厚み:0.5mm)と、ITO回路付きガラス基板(ジオマテック製、厚み:0.7mm)との接続を、以下のとおり行い、接続構造体を作製した。
作製した実装サンプル(接続構造体)の導通抵抗試験を以下のようにして行った。評価結果を表4にまとめて示す。
オリンパス社製BH3−MJL液晶パネル検査用顕微鏡を用いて、ノマルスキー微分干渉観察によりガラス基板側から圧痕の状態を観察した。はっきり輪郭を確認できる場合を良好、それ以外を不明瞭とした。
Claims (9)
- 前記式(1)で表されるジ(メタ)アクリレート化合物の含有量が、前記モノマー全量を基準として80mol%以上である、請求項1記載の架橋ポリマー粒子。
- 前記シード粒子の重量平均分子量が3000〜50000である、請求項1又は2に記載の架橋ポリマー粒子。
- 前記シード粒子の質量に対する前記式(1)で表されるジ(メタ)アクリレート化合物の質量比が、20〜300倍である、請求項1〜3のいずれか一項に記載の架橋ポリマー粒子。
- 180℃における圧縮回復率が40%以上である、請求項1〜4のいずれか一項に記載の架橋ポリマー粒子。
- 前記平均粒径Dが2〜10μmであり、粒径のCv値が15%以下である、請求項1〜5のいずれか一項に記載の架橋ポリマー粒子。
- 請求項1〜6のいずれか一項に記載の架橋ポリマー粒子と、該架橋ポリマー粒子の表面に形成された金属被膜と、を有する、導電性粒子。
- 請求項7に記載の導電性粒子と、バインダー樹脂とを含む、異方性導電材料。
- 第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、
第2の回路基板の主面上に第2の回路電極が形成され、前記第2の回路電極が前記第1の回路電極と対向するように配置された第2の回路部材と、
前記第1の回路部材と前記第2の回路部材との間に介在する接続部と、
を備え、
前記接続部が、請求項7に記載の導電性粒子を含む、回路部材の接続構造体。
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