JP2014078708A5 - - Google Patents
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- Publication number
- JP2014078708A5 JP2014078708A5 JP2013206863A JP2013206863A JP2014078708A5 JP 2014078708 A5 JP2014078708 A5 JP 2014078708A5 JP 2013206863 A JP2013206863 A JP 2013206863A JP 2013206863 A JP2013206863 A JP 2013206863A JP 2014078708 A5 JP2014078708 A5 JP 2014078708A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- stack
- metal layer
- work function
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims 27
- 239000002184 metal Substances 0.000 claims 27
- 238000000034 method Methods 0.000 claims 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 17
- 229910052718 tin Inorganic materials 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 5
- 238000000137 annealing Methods 0.000 claims 4
- 239000011159 matrix material Substances 0.000 claims 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 2
- 230000009977 dual effect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910052706 scandium Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- -1 HfSiN Inorganic materials 0.000 claims 1
- 229910004129 HfSiO Inorganic materials 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 1
- 150000001342 alkaline earth metals Chemical group 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical group 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12187571.0A EP2717308A1 (en) | 2012-10-08 | 2012-10-08 | A method for manufacturing a dual work function semiconductor device |
| EP12187571.0 | 2012-10-08 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014078708A JP2014078708A (ja) | 2014-05-01 |
| JP2014078708A5 true JP2014078708A5 (enrdf_load_stackoverflow) | 2016-11-17 |
| JP6274805B2 JP6274805B2 (ja) | 2018-02-07 |
Family
ID=47010347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013206863A Active JP6274805B2 (ja) | 2012-10-08 | 2013-10-02 | 二重仕事関数半導体デバイスの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9245759B2 (enrdf_load_stackoverflow) |
| EP (1) | EP2717308A1 (enrdf_load_stackoverflow) |
| JP (1) | JP6274805B2 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9484427B2 (en) | 2014-07-01 | 2016-11-01 | Globalfoundries Inc. | Field effect transistors having multiple effective work functions |
| JP2016054250A (ja) * | 2014-09-04 | 2016-04-14 | 豊田合成株式会社 | 半導体装置、製造方法、方法 |
| US9859392B2 (en) | 2015-09-21 | 2018-01-02 | Samsung Electronics Co., Ltd. | Integrated circuit device and method of manufacturing the same |
| KR102664033B1 (ko) | 2017-02-06 | 2024-05-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| EP4053891A4 (en) | 2021-01-11 | 2023-01-04 | Changxin Memory Technologies, Inc. | Method for manufacturing semiconductor structure, and semiconductor structure |
| EP4276894A4 (en) * | 2021-01-11 | 2024-07-10 | Changxin Memory Technologies, Inc. | METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE |
| CN114765132A (zh) * | 2021-01-11 | 2022-07-19 | 长鑫存储技术有限公司 | 半导体结构制作方法及半导体结构 |
| US12009400B2 (en) | 2021-02-14 | 2024-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device providing multiple threshold voltages and methods of making the same |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6794234B2 (en) * | 2002-01-30 | 2004-09-21 | The Regents Of The University Of California | Dual work function CMOS gate technology based on metal interdiffusion |
| US7291527B2 (en) * | 2005-09-07 | 2007-11-06 | Texas Instruments Incorporated | Work function control of metals |
| JP2009194352A (ja) * | 2008-01-17 | 2009-08-27 | Toshiba Corp | 半導体装置の製造方法 |
| US20090286387A1 (en) * | 2008-05-16 | 2009-11-19 | Gilmer David C | Modulation of Tantalum-Based Electrode Workfunction |
| JP4602440B2 (ja) * | 2008-06-12 | 2010-12-22 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US7994036B2 (en) * | 2008-07-01 | 2011-08-09 | Panasonic Corporation | Semiconductor device and fabrication method for the same |
| JP5314964B2 (ja) * | 2008-08-13 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2010177265A (ja) * | 2009-01-27 | 2010-08-12 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| US8309419B2 (en) * | 2009-02-04 | 2012-11-13 | Freescale Semiconductor, Inc. | CMOS integration with metal gate and doped high-K oxides |
| JP5329294B2 (ja) * | 2009-04-30 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2010272596A (ja) * | 2009-05-19 | 2010-12-02 | Renesas Electronics Corp | 半導体装置の製造方法 |
| JP5372617B2 (ja) * | 2009-06-24 | 2013-12-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5432621B2 (ja) * | 2009-07-23 | 2014-03-05 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| DE102009047310B4 (de) * | 2009-11-30 | 2013-06-06 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Austrittsarbeitseinstellung in Gate-Stapeln mit großem ε für Bauelemente mit unterschiedlichen Schwellwertspannungen |
| US8343865B2 (en) * | 2010-01-21 | 2013-01-01 | Renesas Electronics Corporation | Semiconductor device having dual work function metal |
| US8643115B2 (en) * | 2011-01-14 | 2014-02-04 | International Business Machines Corporation | Structure and method of Tinv scaling for high κ metal gate technology |
| JP2012186259A (ja) * | 2011-03-04 | 2012-09-27 | Renesas Electronics Corp | 半導体装置の製造方法および半導体装置 |
| JP5824661B2 (ja) * | 2011-03-25 | 2015-11-25 | パナソニックＩｐマネジメント株式会社 | 半導体装置及びその製造方法 |
| US8729637B2 (en) * | 2011-10-05 | 2014-05-20 | International Business Machines Corporation | Work function adjustment by carbon implant in semiconductor devices including gate structure |
-
2012
- 2012-10-08 EP EP12187571.0A patent/EP2717308A1/en not_active Withdrawn
-
2013
- 2013-10-02 JP JP2013206863A patent/JP6274805B2/ja active Active
- 2013-10-07 US US14/047,849 patent/US9245759B2/en active Active
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