JP2014053438A5 - - Google Patents

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Publication number
JP2014053438A5
JP2014053438A5 JP2012196733A JP2012196733A JP2014053438A5 JP 2014053438 A5 JP2014053438 A5 JP 2014053438A5 JP 2012196733 A JP2012196733 A JP 2012196733A JP 2012196733 A JP2012196733 A JP 2012196733A JP 2014053438 A5 JP2014053438 A5 JP 2014053438A5
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JP
Japan
Prior art keywords
magnetic film
manufacturing
magnetoresistive element
barrier layer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2012196733A
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English (en)
Japanese (ja)
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JP2014053438A (ja
JP6072478B2 (ja
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Priority to JP2012196733A priority Critical patent/JP6072478B2/ja
Priority claimed from JP2012196733A external-priority patent/JP6072478B2/ja
Publication of JP2014053438A publication Critical patent/JP2014053438A/ja
Publication of JP2014053438A5 publication Critical patent/JP2014053438A5/ja
Application granted granted Critical
Publication of JP6072478B2 publication Critical patent/JP6072478B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012196733A 2012-09-07 2012-09-07 磁気抵抗素子の製造方法 Expired - Fee Related JP6072478B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012196733A JP6072478B2 (ja) 2012-09-07 2012-09-07 磁気抵抗素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012196733A JP6072478B2 (ja) 2012-09-07 2012-09-07 磁気抵抗素子の製造方法

Publications (3)

Publication Number Publication Date
JP2014053438A JP2014053438A (ja) 2014-03-20
JP2014053438A5 true JP2014053438A5 (cg-RX-API-DMAC10.html) 2015-03-19
JP6072478B2 JP6072478B2 (ja) 2017-02-01

Family

ID=50611649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012196733A Expired - Fee Related JP6072478B2 (ja) 2012-09-07 2012-09-07 磁気抵抗素子の製造方法

Country Status (1)

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JP (1) JP6072478B2 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102557397B1 (ko) * 2015-05-14 2023-07-19 삼성전자주식회사 흡수 층들을 이용한 다중 단계 원소 제거

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445554B1 (en) * 2000-03-10 2002-09-03 Read-Rite Corporation Method and system for providing edge-junction TMR for high areal density magnetic recording
US6653154B2 (en) * 2001-03-15 2003-11-25 Micron Technology, Inc. Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
WO2008120320A1 (ja) * 2007-03-28 2008-10-09 Fujitsu Limited 薄膜磁気ヘッド及びその製造方法ならびに磁気記録装置
JP2009224477A (ja) * 2008-03-14 2009-10-01 Fujitsu Ltd 半導体記憶装置及びその製造方法

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