JP2014053438A5 - - Google Patents
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- JP2014053438A5 JP2014053438A5 JP2012196733A JP2012196733A JP2014053438A5 JP 2014053438 A5 JP2014053438 A5 JP 2014053438A5 JP 2012196733 A JP2012196733 A JP 2012196733A JP 2012196733 A JP2012196733 A JP 2012196733A JP 2014053438 A5 JP2014053438 A5 JP 2014053438A5
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- JP
- Japan
- Prior art keywords
- magnetic film
- manufacturing
- magnetoresistive element
- barrier layer
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 claims description 11
- 210000002381 Plasma Anatomy 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Chemical group [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 2
- 229910019236 CoFeB Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 1
Description
本発明は、磁気抵抗素子の製造方法において、第一の磁性体膜を成膜し、予めパターンニングされたマスクを用いて前記第一の磁性体膜をプラズマエッチングした後、前記プラズマエッチングされた第一の磁性体膜の上方に障壁層を成膜し、前記成膜された障壁層の上方に第二の磁性体膜を成膜することを特徴とする。
According to the present invention, in the method of manufacturing a magnetoresistive element, a first magnetic film is formed, and the first magnetic film is plasma etched using a pre-patterned mask, and then the plasma etching is performed. forming a barrier layer over the first magnetic layer, characterized by depositing a second magnetic film above the film-formed barrier layer.
Claims (5)
第一の磁性体膜を成膜し、
予めパターンニングされたマスクを用いて前記第一の磁性体膜をプラズマエッチングした後、前記プラズマエッチングされた第一の磁性体膜の上方に障壁層を成膜し、
前記成膜された障壁層の上方に第二の磁性体膜を成膜することを特徴とする磁気抵抗素子の製造方法。 In the method of manufacturing a magnetoresistive element,
Forming a first magnetic film;
After plasma etching the first magnetic film using a pre-patterned mask, a barrier layer is formed above the plasma-etched first magnetic film,
Method for manufacturing a magneto-resistance device characterized by forming the second magnetic film above the film-formed barrier layer.
前記障壁層は、前記第二の磁性体膜の成膜後、プラズマエッチングされることを特徴とする磁気抵抗素子の製造方法。 In the manufacturing method of the magnetoresistive element according to claim 1 ,
The barrier layer after the deposition of the second magnetic film, the method for manufacturing a magneto-resistance device characterized Rukoto plasma etched.
前記第二の磁性体膜の寸法は、前記第一の磁性体膜の寸法より大きくなるようにプラズマエッチングされることを特徴とする磁気抵抗素子の製造方法。 In the manufacturing method of the magnetoresistive element according to claim 1 ,
The method of manufacturing a magnetoresistive element, wherein the second magnetic film is plasma-etched so that a dimension of the second magnetic film is larger than a dimension of the first magnetic film.
前記障壁層は、ＭｇＯであり、
前記第一の磁性体膜および前記第二の磁性体膜は、ＣｏＦｅＢであることを特徴とする磁気抵抗素子の製造方法。 In the manufacturing method of the magnetoresistive element according to claim 1 ,
The barrier layer is MgO;
The method of manufacturing a magnetoresistive element, wherein the first magnetic film and the second magnetic film are CoFeB.
前記第一の磁性体膜は、フリー層であり、
前記第二の磁性体膜は、固定層であることを特徴とする磁気抵抗素子の製造方法。 In the manufacturing method of the magnetoresistive element according to claim 4 ,
The first magnetic film is a free layer,
The method of manufacturing a magnetoresistive element, wherein the second magnetic film is a fixed layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012196733A JP6072478B2 (en) | 2012-09-07 | 2012-09-07 | Method for manufacturing magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012196733A JP6072478B2 (en) | 2012-09-07 | 2012-09-07 | Method for manufacturing magnetoresistive element |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014053438A JP2014053438A (en) | 2014-03-20 |
| JP2014053438A5 true JP2014053438A5 (en) | 2015-03-19 |
| JP6072478B2 JP6072478B2 (en) | 2017-02-01 |
Family
ID=50611649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012196733A Expired - Fee Related JP6072478B2 (en) | 2012-09-07 | 2012-09-07 | Method for manufacturing magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6072478B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102557397B1 (en) * | 2015-05-14 | 2023-07-19 | 삼성전자주식회사 | Multi-stage element removal using absorption layers |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6445554B1 (en) * | 2000-03-10 | 2002-09-03 | Read-Rite Corporation | Method and system for providing edge-junction TMR for high areal density magnetic recording |
| US6653154B2 (en) * | 2001-03-15 | 2003-11-25 | Micron Technology, Inc. | Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure |
| WO2008120320A1 (en) * | 2007-03-28 | 2008-10-09 | Fujitsu Limited | Thin film magnetic head, method for fabricating the same and magnetic recorder |
| JP2009224477A (en) * | 2008-03-14 | 2009-10-01 | Fujitsu Ltd | Semiconductor storage device and method of manufacturing the same |
-
2012
- 2012-09-07 JP JP2012196733A patent/JP6072478B2/en not_active Expired - Fee Related
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