WO2008120320A1 - Thin film magnetic head, method for fabricating the same and magnetic recorder - Google Patents

Thin film magnetic head, method for fabricating the same and magnetic recorder Download PDF

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Publication number
WO2008120320A1
WO2008120320A1 PCT/JP2007/056681 JP2007056681W WO2008120320A1 WO 2008120320 A1 WO2008120320 A1 WO 2008120320A1 JP 2007056681 W JP2007056681 W JP 2007056681W WO 2008120320 A1 WO2008120320 A1 WO 2008120320A1
Authority
WO
WIPO (PCT)
Prior art keywords
fabricating
thin film
magnetic
magnetic shield
magnetic head
Prior art date
Application number
PCT/JP2007/056681
Other languages
French (fr)
Japanese (ja)
Inventor
Masanori Akie
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to PCT/JP2007/056681 priority Critical patent/WO2008120320A1/en
Publication of WO2008120320A1 publication Critical patent/WO2008120320A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)

Abstract

A method for fabricating a thin film magnetic head having a CPP structure comprising a magnetoresistive element, hard magnetic layers formed to laterally sandwich the magnetoresistive element, and upper and lower magnetic shield layers formed to vertically sandwich the magnetoresistive effect element and the hard magnetic layers. The method for fabricating a thin film magnetic head is characterized in that immediately after a multilayer structure film for forming a magnetoresistive element is deposited, a first upper magnetic shield region is deposited on top of the CPP structure film and a second upper magnetic shield region of a magnetic shield material identical to or different from that of the first upper magnetic shield region is deposited after a magnetoresistive element is formed from the multilayer structure film.
PCT/JP2007/056681 2007-03-28 2007-03-28 Thin film magnetic head, method for fabricating the same and magnetic recorder WO2008120320A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056681 WO2008120320A1 (en) 2007-03-28 2007-03-28 Thin film magnetic head, method for fabricating the same and magnetic recorder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056681 WO2008120320A1 (en) 2007-03-28 2007-03-28 Thin film magnetic head, method for fabricating the same and magnetic recorder

Publications (1)

Publication Number Publication Date
WO2008120320A1 true WO2008120320A1 (en) 2008-10-09

Family

ID=39807913

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056681 WO2008120320A1 (en) 2007-03-28 2007-03-28 Thin film magnetic head, method for fabricating the same and magnetic recorder

Country Status (1)

Country Link
WO (1) WO2008120320A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014053438A (en) * 2012-09-07 2014-03-20 Hitachi High-Technologies Corp Process of manufacturing magnetoresistive element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000339637A (en) * 1999-06-01 2000-12-08 Hitachi Metals Ltd Production of magnetoresistance effect head/giant magnetoresistance effect head
JP2004342154A (en) * 2003-05-13 2004-12-02 Hitachi Ltd Method for manufacturing magnetic head and magnetic head

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000339637A (en) * 1999-06-01 2000-12-08 Hitachi Metals Ltd Production of magnetoresistance effect head/giant magnetoresistance effect head
JP2004342154A (en) * 2003-05-13 2004-12-02 Hitachi Ltd Method for manufacturing magnetic head and magnetic head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014053438A (en) * 2012-09-07 2014-03-20 Hitachi High-Technologies Corp Process of manufacturing magnetoresistive element

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