JP2004342154A - Method for manufacturing magnetic head and magnetic head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To surely remove the resist and the magnetic domain control film deposited thereon in a process of removing them in a process of forming a magnetoresistive effect element. <P>SOLUTION: A planarization process (d) by a chemical and mechanical polishing method or etch back method is introduced before the removal of the resist mask 4 used for processing tracks. After the mask is exposed in the planarization process, the resist removal is performed (e), by which the formation of the fine tracks is performed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method of manufacturing a magnetic head and a magnetic head manufactured by the method, and more particularly, to a magnetic head having a perpendicular conduction type magnetoresistive element and a method of manufacturing the same.
[0002]
[Prior art]
To increase the recording density of a magnetic disk device, it is important to increase the sensitivity of a magnetic head and to reduce the track width. In particular, in the reproducing section, starting from an inductive type head to improve sensor sensitivity, a magnetoresistive head (MR: Magneto-resistance head) using an anisotropic magnetoresistive film, and a giant magnetoresistive head (GMR: In addition to a shift to a Giant Magneto-resistance head, a Tunneling Magneto-resistance head (TMR) and a CPP-GMR (Current Perpendicular to the Gant-Magneto-head) are expected. ing. The structure of the TMR head and the CPP-GMR head is different from that of the conventional GMR head because the signal current flows in the direction perpendicular to the sensor film. Such a sensor film is called a vertical conduction type magnetoresistive film.
[0003]
The reproduction track portions of the TMR head and the CPP-GMR head are formed, for example, as described in JP-A-2-17643. A T-type resist pattern is formed on the vertical conduction type magneto-resistance effect film formed on the lower electrode, and the vertical conduction type magneto-resistance effect film is patterned using the T-type resist pattern as a mask. Is formed, a magnetic domain control film having a three-layer structure including a lower insulating film, a bias film, and an upper insulating film is formed, and the T-type resist pattern is further removed. At this time, the magnetic domain control film formed on the resist pattern together with the resist pattern is removed. Finally, an upper electrode is formed. The magnetic domain control film may be formed by a bias film made of a high electric resistance material instead of using the three-layer structure.
[Patent Document 1]
JP-A-2-17643
[Problems to be solved by the invention]
As described above, the mask used for track formation uses a T-type resist pattern, and the lower insulating film of the magnetic domain control film goes around the undercut portion of the mask and is formed on the magnetoresistive effect film. The contact area between the upper electrode and the magnetoresistive film varies. This causes the resistance of the magnetoresistive element to vary. Therefore, when the amount of undercut is reduced, the magnetic domain control film formed on the lower electrode is formed without interruption at the undercut portion with the magnetic domain control film formed on the mask. This makes it difficult to remove the mask.
[0005]
Also, when the track width is reduced in order to cope with a higher recording density of the magnetic disk device, the undercut amount of the T-type resist is reduced. For example, when a read head having a track width of 120 nm is formed of a two-layer resist having a lower layer of polydimethyl glutarimide (hereinafter referred to as PMGI) and a lower layer of a negative resist, the upper layer resist is formed of a T-type resist. It is formed in a pattern of 120 nm. At this time, if the width of the lower layer PMGI is small, the upper layer resist cannot be supported. In order to support the upper resist, the width of PMGI needs to be 60 nm or more. Therefore, the amount of undercut must be 30 nm or less. However, the manufacturing of the element requires a process allowance, and the undercut amount is set to 20 to 25 nm. Also in this case, the undercut is insufficient, so that the magnetic domain control film formed on the lower electrode is formed without interruption at the undercut portion with the magnetic domain control film formed on the mask, so that it is difficult to remove the mask. .
[0006]
The present invention has been made in view of the above-described problems of the related art, and has a magnetic head capable of reliably removing a resist and a magnetic domain control film deposited thereon (hereinafter referred to as lift-off) in a step of forming a magnetoresistive element. It is an object of the present invention to provide a method for producing the same.
[0007]
[Means for Solving the Problems]
A typical method of manufacturing a magnetic head having a magnetoresistive element according to the present invention includes a step of forming a lower metal layer, a step of forming a magnetoresistive film on the lower metal layer, Forming a resist pattern, patterning the magnetoresistive film using the resist pattern as a mask, laminating a magnetic domain control film while leaving the resist pattern, a magnetic domain control film formed on the resist pattern, a resist pattern A planarization step of removing a part of the magnetic domain control film formed on the lower metal layer and exposing the resist pattern, a step of removing the exposed resist pattern, and a step of removing the exposed resist pattern. Forming an upper metal layer.
[0008]
In forming the magnetoresistive element in this manner, a magnetic domain control film is laminated while leaving the mask used for patterning the magnetoresistive effect element, and then the bias film and the mask surface layer formed on the mask are planarized. To expose the mask, and the exposed mask is removed. Thereby, it is possible to prevent the lift-off caused by the reduction of the amount of undercut that has been effective to reduce the distance of the magnetic domain control film that wraps around the magnetoresistive effect film from becoming difficult. Also, in forming a track using a fine pattern for the purpose of forming a narrow track, it is necessary to reduce the amount of undercut. In this case as well, the lift-off becomes similarly difficult, but the same effect can be obtained in the present invention.
[0009]
According to the present invention, after depositing a magnetic domain control film, a flattening step is performed to prevent a problem that a lift-off for removing the magnetic domain control film from above the magnetoresistance effect element becomes difficult. Accordingly, since it is not necessary to use a T-type structure for the mask, a single-layer resist may be used. In this case, it is not necessary to fall the resist or control the amount of undercut, so that there is an effect that the formation of a fine pattern becomes easy.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[Embodiment 1]
As shown in FIG. 10, a lower electrode was formed on the substrate surface. FIG. 10 shows the reproducing section track in a cross section parallel to the air bearing surface. A permalloy 2 is formed by plating (NiFe: 3.3 μm) on an alumina titanium carbide substrate 1 having an alumina film on the surface, and a resist pattern 101 is further formed (FIG. 10A). Next, the permalloy 2 is patterned by ion milling using argon (Ar) gas (FIG. 10B). The permalloy pattern serves as a lower electrode of the element, and also serves as a lower shield of the element by using a magnetic film. Thereafter, after removing the resist pattern 101, an insulating film 102 (Al ₂ O ₃ : 3.8 μm) is deposited (FIG. 10C), and the surface is formed by a chemical mechanical polishing method using a foamed polyurethane pad and an alumina-based slurry. Is smoothed (FIG. 10D). By this processing, the surface of the substrate 1 is formed as a flat surface by the permalloy 2 and the insulating film 102 around the pattern. Since the surface roughness of the permalloy 2 affects the device characteristics, it is set to 5 nm or less. An element is formed using the permalloy pattern 2 thus formed as a lower electrode.
[0011]
FIG. 1 is a process chart illustrating Embodiment 1 of the present invention. On the lower electrode 2 formed on the surface of the substrate 1 as described above, a perpendicular conduction type magnetoresistive film (for example, a TMR film) 3 is formed (FIG. 1A). The film configuration of the TMR film 3 is, for example, 3 nm thick Ta layer, 5 nm thick NiFe layer, 20 nm thick PtMn layer, 3 nm thick CoFe layer, 1 nm thick Al-0x layer, 1 nm thick CoFe layer, 5 nm thick NiFe layer from the substrate surface. The layer is 7 nm thick and the Ru layer is 5 nm thick.
[0012]
Thereafter, a resist pattern 4 is formed on the TMR film 3, and the TMR film 3 is patterned by Ar ion milling using the resist pattern 4 as a mask (FIG. 1B). For the resist pattern 4, for example, a positive type EB drawing resist having a thickness of 240 nm is used as an upper layer, and a PMGI layer having a thickness of 40 nm is used as a lower layer. The pattern width is, for example, a recess structure in which the upper layer is 120 nm and the lower layer is 60 nm. Next, with the resist pattern 4 remaining, a three-layer structure film (hereinafter, referred to as a magnetic domain control film) of a lower insulating film 5, a magnetic domain control ferromagnetic film 6, and an upper insulating film 7 is formed (FIG. 1 ( c)). The magnetic domain control film has, for example, an Al ₂ O ₃ layer thickness of 20 nm, a CoCrPt layer of 40 nm thickness, and an Al ₂ O ₃ layer thickness of 100 nm from below.
[0013]
Next, chemical mechanical polishing is performed using a foamed polyurethane pad and an alumina-based slurry. By this polishing, the magnetic domain control layer deposited on the resist pattern 4 and the surface layer of the resist pattern 4 are removed, and the thickness of the upper insulating film 7 of the magnetic domain control layer deposited on the lower electrode 2 is about 60 nm. (FIG. 1D).
[0014]
Then, the resist pattern 4 exposed by performing the resist stripping process is removed (FIG. 1E). As described above, by performing the flattening step using chemical mechanical polishing before removing the resist, the resist can be surely removed. Note that the resist pattern 4 could not be removed unless a flattening step by chemical mechanical polishing was performed as in the prior art.
[0015]
FIG. 2 shows a bird's-eye view at this time. The TMR film 3 remains except for the magnetic domain control film portion formed on the track side surface of the element (FIG. 2). Therefore, in the same manner as the formation of the track as described above, the formation of a two-layer resist of resist / PMGI and the patterning using Ar ion milling, the insulating film deposition, and the resist removal process are used to set the vertical direction of the track portion in the device. Perform processing. Further, by forming a permalloy 8 on the TMR film 3, a perpendicular conduction type magnetoresistive element is formed (FIG. 1F). The permalloy 8 uses not only an upper electrode but also a shield by using a magnetic film in the same manner as the permalloy 2.
[0016]
Finally, a reproducing head is formed by forming a current lead line and a pad from the lower electrode 2 and the upper electrode 8. In the TMR head, a signal current flows from one electrode pad to the opposite electrode pad through the upper electrode 8, the TMR film 3, and the lower electrode 2.
[0017]
Thus, according to the first embodiment, the magnetoresistance effect element formed on the lower metal layer (lower electrode) and the magnetic domain control film formed on the lower metal layer in contact with the side surface of the magnetoresistance effect element And an upper metal layer (upper electrode) formed on the magnetoresistive element and the magnetic domain control film. The upper metal layer is joined to the magnetoresistive film by a protrusion extending from the lower surface toward the magnetoresistive element. A magnetic head is manufactured. The feature of this magnetic head is that the upper surface of the magnetic domain control film in contact with the upper metal layer is a surface planarized by a chemical mechanical polishing method or an etch-back method described later.
[0018]
[Embodiment 2]
FIG. 3 is a process chart illustrating Embodiment 2 of the present invention. The second embodiment is a manufacturing method in which the recess structure resist of the first embodiment is changed to a single-layer resist.
As in the first embodiment, a perpendicular conduction type magnetoresistive film 3 (for example, a TMR film) is formed on the lower electrode 2 (FIG. 3A). The film configuration of the TMR film was the same as in the first embodiment. Thereafter, a single-layer resist pattern 34 is formed on the TMR film 3, and the TMR film 3 is patterned by Ar ion milling using the resist pattern 34 as a mask (FIG. 3B). The resist pattern 34 has, for example, a thickness of 300 nm and a width of 120 nm.
[0019]
Next, a magnetic domain control film having a three-layer structure of the lower insulating film 5, the magnetic domain controlling ferromagnetic film 6, and the upper insulating film 7 is formed with the resist pattern 34 left (FIG. 3C). The magnetic domain control film has, for example, an Al ₂ O ₃ layer thickness of 20 nm, a CoCrPt layer of 40 nm thickness, and an Al ₂ O ₃ layer of 100 nm thickness from below. Next, chemical mechanical polishing is performed using a foamed polyurethane pad and an alumina-based slurry. By this polishing, the magnetic domain control layer and the surface layer of the resist pattern 34 deposited on the resist pattern 34 are removed, and the thickness of the upper insulating film 7 of the magnetic domain control layer deposited on the lower electrode 2 is reduced to about 50 nm. The processing is performed until the processing is completed (FIG. 3D).
[0020]
Then, the resist pattern 34 exposed by performing the resist stripping process is removed (FIG. 3E). As described above, by performing the flattening step using chemical mechanical polishing before removing the resist, the resist can be surely removed. Note that the resist pattern 34 could not be removed unless a flattening step by chemical mechanical polishing was performed as in the prior art. FIG. 4 shows a bird's-eye view at this time. The TMR film 3 remains except for the magnetic domain control film portion formed on the side surface of the track of the element (FIG. 4). In the second embodiment, since the single-layer resist is used, the exposed area of the TMR film 3 in the track portion is larger than in the first embodiment, so that the contact area can be increased, and it is possible to prevent an increase in contact resistance. Subsequent steps are performed in the same manner as in the first embodiment, and a perpendicular conduction type magnetoresistance effect element can be formed (FIG. 3F).
[0021]
Finally, a reproducing head is formed by forming a current lead line and a pad from the lower electrode 2 and the upper electrode 8. In the TMR head, a signal current flows from one electrode pad to the opposite electrode pad through the upper electrode 8, the TMR film 3, and the lower electrode 2.
[0022]
By using a single-layer resist for forming tracks as in the present embodiment, it is easy to form narrow tracks. In the recess structure using the two-layer resist, the upper resist is formed to be larger than the lower PMGI, and the thickness of the lower resist is about 40 nm, for example, while the upper resist is 250 nm. As described above, when the resist size is reduced, the lower layer PMGI cannot support the upper layer resist even though the upper layer pattern is formed, and the resist pattern collapses and the pattern cannot be formed. On the other hand, with a single-layer resist, pattern formation is easy, and since no undercut is used, the magnetic domain control film does not run on the TMR film.
[0023]
Thus, according to the second embodiment, the magnetoresistance effect element formed on the lower metal layer (lower electrode) and the magnetic domain control film formed on the lower metal layer in contact with the side surface of the magnetoresistance effect element And an upper metal layer (upper electrode) formed on the magnetoresistive element and the magnetic domain control film. The upper metal layer is joined to the magnetoresistive film by a protrusion extending from the lower surface toward the magnetoresistive element. A magnetic head is manufactured. The feature of this magnetic head is that the upper surface of the magnetic domain control film in contact with the upper metal layer is a surface planarized by a chemical mechanical polishing method or an etch-back method described later.
[0024]
[Embodiment 3]
FIG. 5 is a process chart illustrating Embodiment 3 of the present invention. The third embodiment is a method of manufacturing a current-perpendicular-to-the-plane type magnetoresistive element in which a track portion is formed with an upper electrode material disposed on the magnetoresistive film of the first embodiment. The drawing shows the reproduction section track in a cross section parallel to the air bearing surface.
[0025]
As in the first embodiment, a perpendicular conduction type magnetoresistive film 3 (for example, a TMR film) and a magnetic film (metal film) 54 are sequentially formed on the lower electrode 2. At this time, when the upper electrode material is selected for the magnetic film 54, the shield interval of the element can be determined by adjusting the thickness of the protective film of the perpendicular conduction type magnetoresistance effect film 3. For example, the shield interval is set to 55 nm by adjusting the protective layer of the TMR film. The magnetic film 54 is, for example, 100 nm thick.
[0026]
Thereafter, a resist pattern 55 is formed on the magnetic film 54, and the magnetic film 54 and the TMR film 3 are patterned by Ar ion milling using the resist pattern 55 as a mask. As the resist pattern 55, for example, a single-layer resist having a thickness of 300 nm and a width of 100 nm is used (FIG. 5A). Next, a magnetic domain control film is formed with the resist pattern 55 left. For example, as in the first embodiment, the magnetic domain control film is a lower insulating film 5 (Al ₂ O ₃ : 20 nm thick), a ferromagnetic layer 6 (CoCrPt: 40 nm thick), and an upper insulating film 7 (Al ₂ O ₃ : 100 nm) from below. (Thickness) (FIG. 5B).
[0027]
Thereafter, chemical mechanical polishing is performed using a foamed polyurethane pad and an alumina-based slurry. By this polishing, the magnetic domain control film, the resist pattern 55, and a part of the magnetic film 54 deposited on the resist pattern 55 are removed, and the upper insulating film 7 (Al ₂ O) of the magnetic domain control film on the lower electrode 2 is removed. ₃ ) The process is performed until the film thickness becomes about 50 nm. In this case, since the resist pattern 55 is removed by the chemical mechanical polishing step, there is no need to perform a resist stripping process (FIG. 5C). Subsequent steps are performed in the same manner as in the first embodiment to form a perpendicular conduction type magnetoresistance effect element (FIG. 5D).
[0028]
By using the upper electrode material 54 as a stop layer for chemical mechanical polishing on the TMR film 3 as in the present embodiment, it is easy to control the distance between the shields, which is the distance between the lower electrode and the upper electrode.
[0029]
[Embodiment 4]
FIG. 6 is a process chart illustrating Embodiment 4 of the present invention. The fourth embodiment is a manufacturing method in the case where the magnetic domain control film of the first embodiment is arranged on a magnetoresistive film.
As in the first embodiment, a perpendicular conduction type magnetoresistive film (for example, a TMR film) and a magnetic domain control film are sequentially formed on the lower electrode 2 (the two-layer film of the magnetic domain control film and the TMR film is hereinafter referred to as a sensor film). 63). The film configuration of the TMR film is the same as that in the first embodiment, and the magnetic domain control film thereon is, for example, a Cu layer 1 nm thick, a CoFe layer 3 nm thick, a PtMn layer 9 nm thick, a Ta layer 7 nm thick, and a Ru layer 4 nm thick on the sensor film. And
[0030]
Thereafter, a resist pattern 64 is formed on the sensor film 63, and the sensor film 63 is patterned by Ar ion milling using the resist pattern 64 as a mask. As the resist pattern 64, for example, a single-layer resist having a thickness of 300 nm and a width of 100 nm is used. Next, an insulating film 65 is formed with the resist pattern 64 left. The insulating film 65 is, for example, an Al ₂ O ₃ layer having a thickness of 100 nm (FIG. 6A).
[0031]
Next, chemical mechanical polishing is performed using a foamed polyurethane pad and an alumina-based slurry. By this polishing, the insulating film 65 deposited on the resist pattern 64 and a part of the resist pattern 64 are removed, and the thickness of the insulating film 65 (Al ₂ O ₃ ) deposited on the lower electrode 2 is reduced to about The processing is performed until the thickness becomes 80 nm (FIG. 6B). FIG. 7 shows a bird's-eye view after the resist is removed. According to the present embodiment, since the resist pattern is formed only on the element sensor portion and the processing in the height direction of the sensor is not required, the process can be shortened. Subsequent steps are performed in the same manner as in the first embodiment, and a perpendicular conduction type magnetoresistance effect element can be formed (FIG. 6C).
[0032]
Thus, according to the fourth embodiment, the sensor film including the magnetoresistive element and the magnetic domain control film formed on the lower metal layer (lower electrode) and the sensor film formed on the lower metal layer in contact with the side surface of the sensor film. The upper metal layer (upper electrode) formed on the sensor film and the insulating film, the upper metal layer being joined to the sensor film by a protrusion extending from the lower surface toward the sensor film. A head is manufactured. The feature of this magnetic head is that the upper surface of the insulating film in contact with the upper metal layer is a surface planarized by a chemical mechanical polishing method or an etch-back method described later.
[0033]
[Embodiment 5]
In the method of manufacturing a perpendicular conduction type magnetoresistance effect element according to the present invention, a side shield structure can be formed by replacing the magnetic domain control film with a magnetic film. FIG. 8 shows a fifth embodiment of the present invention.
[0034]
First, the lower electrode 2 is formed in the same manner as in the fourth embodiment, and after depositing the sensor film 63, the sensor film 63 is patterned using the resist pattern 64 as a mask (FIG. 8A). Next, an insulating film 65 (for example, an Al ₂ O ₃ layer with a thickness of 20 nm) is formed with the resist pattern 64 left, and a NiFe film 66 (with a thickness of 100 nm) with a Ta layer (5 nm thick) as an intermediate layer is formed as a lower layer (FIG. 8 (b)).
[0035]
Thereafter, chemical mechanical polishing is performed using a foamed polyurethane pad and an alumina-based slurry. By this polishing, the shield magnetic film 66, the insulating film 65, and the upper portion of the resist pattern 64 deposited on the resist pattern 64 are removed, and the thickness of the shield magnetic film 66 formed on the lower electrode 2 is reduced to about The processing is performed until the thickness becomes 80 nm (FIG. 8C).
[0036]
A resist stripping process is performed, and the subsequent steps are performed in the same manner as in the first embodiment to form a perpendicular conduction type magnetoresistive element (FIG. 8D). In the vertical conduction type magnetoresistance effect element formed in this way, the magnetic track 66 is disposed on both sides of the vertical conduction type magnetoresistance effect film 63, so that the execution track width of the formed reproducing head can be made smaller than before. There is.
[0037]
Thus, according to the fifth embodiment, the sensor film including the magnetoresistive effect element and the magnetic domain control film formed on the lower metal layer (lower electrode) and the sensor film formed on the lower metal layer in contact with the side surface of the sensor film. An insulating film, a magnetic film formed on the insulating film, a sensor film, an upper metal layer formed on the insulating film and the magnetic film, and the upper metal layer (upper electrode) is formed from the lower surface of the sensor film. A magnetic head that is joined to the sensor film by a protrusion extending toward is fabricated. The feature of this magnetic head is that the upper surfaces of the insulating film and the magnetic film that are in contact with the upper metal layer are surfaces that are planarized by a chemical mechanical polishing method or an etch-back method described later.
[0038]
[Embodiment 6]
The surface smoothing by the flattening step of the present invention may use not only a chemical mechanical polishing method but also an etch back method. FIG. 9 is a process chart illustrating Embodiment 6 of the present invention.
First, the same steps as in the fifth embodiment are performed up to the formation of the magnetic film 66 having the insulating film 65 below (FIG. 9A). After that, a resist film 91 is formed. The surface of the substrate is smoothed by the resist film 91. The resist film 91 has a thickness of, for example, 200 nm (FIG. 9B). By using a resist having a low viscosity, the surface flatness is improved.
[0039]
Next, Ar ion milling is performed. Since the etching rate by ion milling has little material dependence, the substrate surface can be uniformly etched (FIG. 9C). Therefore, a shape close to a flattened shape when using chemical mechanical polishing can be obtained. Subsequent steps are performed in the same manner as in the fifth embodiment to form a vertical conduction type magnetoresistance effect element (FIG. 9D). As described above, the same effect can be obtained by the etch-back method as well as the polishing in the flattening step.
Although an example in which the etch-back method is applied to the fifth embodiment instead of the chemical mechanical polishing method is shown here, the present invention can be applied to any of the flattening processes in the other first to fourth embodiments. .
[0040]
【The invention's effect】
According to the present invention, in the step of forming the magnetoresistive element, the resist and the magnetic domain control film deposited thereon can be reliably removed in the step of removing the resist. Further, in the present invention, a single-layer resist can be used as a mask, and a fine pattern can be formed with high accuracy. Therefore, it is possible to form a reproducing head whose track has a width of 120 nm or less, and it is possible to manufacture a magnetic disk device having this recording head and a surface recording density of 100 Gbit / in ² or more.
[Brief description of the drawings]
FIG. 1 is a sectional view of a reproducing head forming process showing a first embodiment of a method of manufacturing a magnetic head according to the present invention.
FIG. 2 is a bird's-eye view of FIG.
FIG. 3 is a sectional view of a reproducing head forming process showing Embodiment 2 of the method of manufacturing a magnetic head according to the present invention.
FIG. 4 is a bird's-eye view of FIG.
FIG. 5 is a sectional view of a reproducing head forming process showing a third embodiment of the method of manufacturing a magnetic head according to the present invention.
FIG. 6 is a sectional view of a reproducing head forming process showing Embodiment 4 of the method for manufacturing a magnetic head according to the present invention.
FIG. 7 is a bird's-eye view of FIG. 6 (b).
FIG. 8 is a sectional view of a reproducing head forming process showing Embodiment 5 of the method for manufacturing a magnetic head according to the present invention.
FIG. 9 is a sectional view of a reproducing head forming process showing Embodiment 6 of the method for manufacturing a magnetic head according to the present invention.
FIG. 10 is an explanatory diagram of a step of forming a lower electrode on a substrate surface.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Alumina titanium carbide substrate, 2 ... Lower electrode, 3 ... Vertical conduction type magnetoresistive film, 4 ... Resist pattern, 5 ... Lower insulating film, 6 ... Ferromagnetic film, 7 ... Upper insulating film, 8 ... Upper electrode, 34 single-layer resist pattern, 54 magnetic layer, 55 resist pattern, 63 sensor film, 64 resist pattern, 65 insulating film, 66 upper electrode, 91 resist film

Claims (16)

Forming a lower metal layer;
Forming a magnetoresistive film on the lower metal layer;
Forming a resist pattern on the magnetoresistive film, patterning the magnetoresistive film using the resist pattern as a mask,
Laminating a magnetic domain control film while leaving the resist pattern,
A magnetic domain control film formed on the resist pattern, a flattening step of exposing the resist pattern by removing a part of the resist pattern and a part of the magnetic domain control film formed on the lower metal layer,
Removing the exposed resist pattern;
Forming an upper metal layer on the magnetoresistive film. 2. The method of manufacturing a magnetic head according to claim 1, wherein the magnetic domain control film is a laminated film of a lower insulating film, a magnetic domain controlling ferromagnetic film, and an upper insulating film. 2. The method of manufacturing a magnetic head according to claim 1, wherein the flattening step uses a chemical mechanical polishing method or an etch-back method. 2. The method of manufacturing a magnetic head according to claim 1, wherein the resist forming the resist pattern is a single-layer resist. Forming a lower metal layer;
Forming a magnetoresistive film on the lower metal layer;
Forming a magnetic film on the magnetoresistive film;
Forming a resist pattern on the magnetic film, patterning the magnetic film and the magnetoresistive film using the resist pattern as a mask,
Laminating a magnetic domain control film while leaving the resist pattern,
The magnetic domain control film formed on the resist pattern, the resist pattern, a part of the magnetic film formed on the magnetoresistive film and a part of the magnetic domain control film formed on the lower metal layer. Removing and exposing the resist pattern, a flattening step,
Forming an upper metal layer on the magnetic film. 6. The method of manufacturing a magnetic head according to claim 5, wherein the magnetic domain control film is a laminated film of a lower insulating film, a magnetic domain controlling ferromagnetic film, and an upper insulating film. 6. The method for manufacturing a magnetic head according to claim 5, wherein the flattening step uses a chemical mechanical polishing method or an etch-back method. Forming a lower metal layer;
Forming a magnetoresistive film on the lower metal layer;
Forming a magnetic domain control film on the magnetoresistive effect film,
Forming a resist pattern on the magnetic domain control film, patterning the magnetic domain control film and the magnetoresistive film using the resist pattern as a mask,
Laminating an insulating film on the upper metal layer exposed by both ends of the magnetoresistive effect film and the magnetic domain control film and patterning while leaving the resist pattern;
An insulating film formed on the resist pattern, a planarization step of removing a part of the resist pattern and a part of the insulating film formed on the lower metal layer to expose the resist pattern,
Removing the exposed resist pattern;
Forming an upper metal layer on the magnetic domain control film. 9. The method of manufacturing a magnetic head according to claim 8, wherein the magnetic domain control film is a laminated film including a nonmagnetic conductive layer, a magnetic domain controlling ferromagnetic film, and an antiferromagnetic layer. . 9. The method of manufacturing a magnetic head according to claim 8, wherein the flattening step uses a chemical mechanical polishing method or an etch-back method. Forming a lower metal layer;
Forming a magnetoresistive film on the lower metal layer;
Forming a magnetic domain control film on the magnetoresistive film,
Forming a resist pattern on the magnetic domain control film, patterning the magnetic domain control film and the magnetoresistive film using the resist pattern as a mask,
Laminating an insulating film and a magnetic film on the lower metal layer exposed by both ends of the magnetoresistive effect film and the magnetic domain control film and patterning while leaving the resist pattern;
A flattening step of exposing the resist pattern by removing an insulating film and a magnetic film formed on the resist pattern, a part of the resist pattern and a part of the magnetic film formed on the lower metal layer,
Removing the exposed resist pattern;
Forming an upper metal layer on the magnetic domain control film. 12. The method of manufacturing a magnetic head according to claim 11, wherein the magnetic domain control film is a laminated film including a nonmagnetic conductive layer, a magnetic domain control ferromagnetic film, and an antiferromagnetic layer. . 12. The method of manufacturing a magnetic head according to claim 11, wherein the flattening step uses a chemical mechanical polishing method or an etch-back method. A magnetoresistive element formed on the lower metal layer, a magnetic domain control film formed on the lower metal layer in contact with a side surface of the magnetoresistive element, the magnetoresistive element and the magnetic domain control film An upper metal layer formed on the magnetic head, wherein the upper metal layer is joined to the magnetoresistive film by a protrusion extending from the lower surface toward the magnetoresistive element.
The magnetic head according to claim 1, wherein an upper surface of the magnetic domain control film in contact with the upper metal layer is a surface planarized by a chemical mechanical polishing method. A laminated film including a magnetoresistive element and a magnetic domain control film formed on the lower metal layer; an insulating film formed on the lower metal layer in contact with a side surface of the laminated film; An upper metal layer formed on the insulating film, wherein the upper metal layer is joined to the laminated film by a protrusion extending from the lower surface toward the laminated film,
A magnetic head according to claim 1, wherein an upper surface of said insulating film in contact with said upper metal layer is a surface planarized by a chemical mechanical polishing method. A stacked film including a magnetoresistive element and a magnetic domain control film formed on the lower metal layer, an insulating film formed on the lower metal layer in contact with a side surface of the stacked film, A magnetic film formed thereon, including the laminated film, the insulating film, and an upper metal layer formed on the magnetic film, wherein the upper metal layer is formed by a protrusion extending from a lower surface toward the laminated film. In the magnetic head bonded to the laminated film,
The magnetic head according to claim 1, wherein upper surfaces of the insulating film and the magnetic film in contact with the upper metal layer are surfaces planarized by a chemical mechanical polishing method.

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