JP2014036094A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of suppressing simultaneously peeling support substrates provided at both ends of a coil layer.SOLUTION: A peeling layer formation step forms a peeling layer 83 by performing a step of forming a metal film 81 and a step of forming a barrier film 82 in which a metal element is not diffused over the metal film 81. A peeling step peels a support substrate 80 provided at one end of a coil layer 21 from the coil layer by heating the metal film 81 formed on the support substrate 80 provided at one end of the coil layer 21 to a temperature not less than a liquefaction temperature while keeping the metal film 81 formed on the support substrate 80 provided at the other end of the coil layer 21 at a temperature below the liquefaction temperature.

Description

  The present invention relates to a method for manufacturing a semiconductor device in which constituent members formed on a support substrate are bonded together to form a coil layer including a coil therein, and the coil layer is mounted on the substrate. It is about.

  Conventionally, for example, Patent Document 1 proposes a semiconductor device in which a coil layer is mounted on a circuit board. The coil layer is formed by laminating components having a wiring part, a low dielectric constant film (insulating film) covering the wiring part, and a connection part electrically connected to the wiring part and exposed from the low dielectric constant film. It is configured.

  Such a semiconductor device is manufactured as follows. That is, first, two support substrates are prepared, and a release layer made of an ultraviolet curable resin is formed on each support substrate. After that, on each release layer, a constituent member configured as a set of a wiring portion having a predetermined pattern, an insulating film covering the wiring portion, and a connecting portion electrically connected to the wiring portion and exposed from the insulating film A set is formed.

  Subsequently, the constituent members formed on each support substrate are arranged to face each other, and the constituent members are bonded to each other while holding the support substrate while being pressed, so that the coil constituted by the wiring portion and the connection portion is internally provided. And a coil layer provided with a support substrate at both end portions in the stacking direction. Then, ultraviolet rays are irradiated from one end portion side of the coil layer to cure the release layer on the support substrate provided at the one end portion, thereby selectively peeling the support substrate.

  Next, the coil layer is mounted on the circuit board so that the side of the coil layer from which the support substrate is peeled faces the circuit board while holding the coil layer on the support board provided at the other end of the coil layer. To do. Thereafter, ultraviolet rays are irradiated from the other end portion side of the coil layer to cure the release layer on the support substrate provided at the other end portion, thereby peeling the support substrate. Thereby, a semiconductor device provided with a coil layer on a circuit board is manufactured.

  In addition, the number of the structural members which comprise a coil layer can be changed suitably. For example, when the number of constituent members is increased, a plurality of stacked bodies having support substrates at both ends in the stacking direction are prepared, and the support substrates provided at one end of each stacked body are selectively removed. And the coil layer which has a desired number of structural members is comprised by arrange | positioning one end part (end part which removed the support substrate) of the laminated body facing each other, and bonding together while pressing.

JP 2011-238895 A

  However, in the above manufacturing method, when the support substrate is peeled off, the support substrates provided at both ends of the coil layer (laminated body) may be peeled off at the same time, and the coil layer (laminated body) may be held. There is a problem that it can be difficult. That is, when peeling the support substrate provided at one end, the release layer on the support substrate provided at the one end is cured and peeled by irradiating ultraviolet rays from the one end. When the thickness of the layer (laminate) is thin, the release layer on the supporting substrate provided at the other end is also irradiated with ultraviolet rays, and this release layer may be cured. For this reason, the support substrate provided at both ends of the coil layer (laminated body) may be peeled off at the same time.

  An object of this invention is to provide the manufacturing method of the semiconductor device which can suppress that the support substrate provided in the both ends of the coil layer (laminated body) peels simultaneously in view of the said point.

  In order to achieve the above object, according to the first aspect of the present invention, a process of preparing two support substrates (80) having one surface and a release layer formation for forming a release layer (83) on one surface of each support substrate are provided. A wiring pattern (32 to 62) having a predetermined pattern, an insulating film (31 to 61) covering the wiring section, and a connection exposed in the wiring section and exposed from the insulating film via a peeling layer on each of the supporting substrates. Forming a set of component members (30 to 60) configured as a set of portions (32a, 32b to 62a, 62b), and the component members disposed on the two support substrates facing each other And holding the supporting substrate while applying pressure, and performing a process of connecting the wiring portions of the constituent members via the connecting portions, thereby including a coil constituted by the wiring portions and the connecting portions in the stacking direction. Support substrate on both ends of Forming a coil layer provided, a peeling step of selectively separating the support substrate from the coil layer performs a mounting step of mounting a coil layer on a substrate, and is characterized in the following points.

  That is, in the peeling layer forming step, a step of forming a metal film and a step of forming a barrier film in which the metal element is not diffused on the metal film are performed. In the peeling step, the coil layer is provided at one end of the coil layer. By holding the metal film formed on the support substrate below the liquefaction temperature and heating the metal film formed on the support substrate provided at the other end of the coil layer to the liquefaction temperature or more, the coil The support substrate provided at the other end is peeled from the layer.

  According to this, a release layer composed of a metal film and a barrier film is formed on the support substrate. Then, the metal film formed on the support substrate provided at one end (not peeled) is formed on the support substrate provided (desired to be peeled off) at the other end so that the metal film is not heated above the liquefaction temperature. The formed metal film is heated to a temperature higher than the liquefaction temperature, and the support substrate provided at the other end is selectively peeled off. For this reason, it can suppress that a support substrate peels simultaneously from the both ends of a coil layer.

  In addition, as in the invention described in claim 7, the laminated member is configured by bonding the constituent members, and the support substrate provided at the other end is peeled from the laminate. Similarly to the described invention, the support substrate can be prevented from being peeled off simultaneously from both ends of the laminate.

  In this case, as in the invention described in claim 2, in the peeling step, the metal film formed on the support substrate provided at the other end of the coil layer is heated to a temperature higher than the liquefaction temperature and then to a temperature lower than the liquefaction temperature. It is preferable to cool and peel off the support substrate provided at the other end of the coil layer in a state where the metal film is a solid layer.

  According to this, it can suppress that a metal film adheres to the side part of the support substrate to peel or the side part of a coil layer.

  Further, as in the invention described in claim 3, in the peeling step, the support substrate provided at the other end of the coil layer is heated while cooling the support substrate provided at the one end of the coil layer. It is preferable.

  According to this, it can suppress that the metal film on the support substrate with which one edge part was equipped becomes more than liquefaction temperature.

  In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim shows the correspondence with the specific means as described in embodiment mentioned later.

It is sectional drawing of the semiconductor device manufactured by the manufacturing method of the semiconductor device in 1st Embodiment of this invention. (A) is a schematic plan view of the first component member, (b) is a schematic plan view of the second component member, (c) is a schematic plan view of the third component member, and (d) is a plan view of the fourth component member 60. It is a schematic diagram. It is a plane schematic diagram when moving the 1st structural member shown in FIG. FIG. 2 is a cross-sectional view showing a manufacturing process of the semiconductor device shown in FIG. 1. FIG. 5 is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 4; FIG. 6 is a cross-sectional view showing a manufacturing step of the semiconductor device following that of FIG. 5; FIG. 7 is a cross-sectional view showing a manufacturing step of the semiconductor device following that of FIG. 6; It is sectional drawing which shows the manufacturing process of the semiconductor device in 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device in 3rd Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.

(First embodiment)
A first embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 1, the semiconductor device is configured by mounting a coil layer 21 having a coil 20 on a circuit board 10. In the present embodiment, the circuit board 10 corresponds to the board of the present invention.

  The circuit board 10 has a rectangular plate shape, and an insulating film 11 is disposed on the surface. An opening 12 is formed in the insulating film 11, and the opening 12 is made of Cu, Au, Al, or the like that is electrically connected to a wiring (not shown) formed on the circuit board 10. A metal film 13 is disposed.

  Further, a coil layer 21 having a coil 20 wound around a normal line direction with respect to the surface of the circuit board 10 as an axis is provided on the surface of the circuit board 10. In the present embodiment, the coil layer 21 is configured by laminating first to fourth constituent members 30 to 60. Below, the structure of the 1st-4th structural members 30-60 is demonstrated, referring FIG. 1 and FIG. 2 is a schematic plan view when the coil layer 21 is viewed from the circuit board 10 side in FIG. 1, and the cross-sectional configuration of the coil layer 21 in FIG. 1 is the first to fourth configurations in FIG. It corresponds to each II cross section in the members 30-60.

  As shown in FIG. 1 and FIG. 2A, the first component 30 has an outer shape formed of a low dielectric constant film 31, a rectangular plate shape, and a plane dimension of the circuit board 10. It is the same as. And the spiral wiring part 32 comprised by the inside from the inside to the outside in the inside of the low dielectric constant film 31 is provided. In the present embodiment, the wiring portion 32 has a pattern in which the center point of the spiral structure coincides with the center point of the first component member 30. Further, the wiring portion 32 is provided with a first connection portion 32a exposed from the circuit board 10 side of the low dielectric constant film 31 at the outer end portion, and among the low dielectric constant film 31 at the inner end portion. A second connection portion 32b exposed from the second component member 40 side is provided. In the present embodiment, the low dielectric constant film 31 corresponds to the insulating film of the present invention. As the low dielectric constant film 31, for example, a polyimide resin or the like is used.

  In the first component member 30, a conductive portion 33 is formed on the outer edge portion of the portion where the wiring portion 32 is provided. In the present embodiment, four conductive portions 33 are provided, and each conductive portion 33 is arranged point-symmetrically at a position separated from the center point of the first component member 30 by a predetermined distance.

  Similarly, as shown in FIG. 1 and FIGS. 2B to 2D, the second to fourth constituent members 40 to 60 are configured with low dielectric constant films 41 to 61 and have a rectangular plate shape. In addition, the planar dimension is the same as the planar dimension of the circuit board 10. And the wiring part 42 which is formed in the inside of the low dielectric constant films 41 to 61 and wound from the inside toward the outside and has the same pattern as the wiring part 32 of the first component member 30. ~ 62. In other words, each of the wiring portions 42 to 62 has a pattern in which the central point of the spiral structure and the central points of the second to fourth constituent members 40 to 60 are matched.

  Further, each of the wiring portions 42 to 62 is provided with first connection portions 42 a to 62 a exposed from the low dielectric constant films 41 to 61 at the outer end portions, and the low dielectric constant films 41 to 61 at the inner end portions. Second connection portions 42 b to 62 b exposed from 61 are provided. Specifically, the first connecting portion 42a of the second constituent member 40 is exposed from the third constituent member 50 side of the low dielectric constant film 41, and the second connecting portion 42b of the second constituent member 40 is low dielectric. The rate film 41 is exposed from the first component 30 side. Further, the first connection portion 52 a of the third component member 50 is exposed from the second component member 40 side of the low dielectric constant film 51, and the second connection portion 52 b of the third component member 50 is exposed to the low dielectric constant film 51. Of these, the fourth constituent member 60 is exposed. Further, the first connecting portion 62a of the fourth constituent member 60 is exposed from the side opposite to the third constituent member 50 side of the low dielectric constant film 61, and the second connecting portion 62b of the fourth constituent member 60 is low dielectric. The rate film 61 is exposed from the third component member 50 side.

  In addition, each of the second to fourth constituent members 40 to 60 includes conductive portions 43 to 63 at outer edge portions of the portions where the wiring portions 42 to 62 are provided. Each of the conductive portions 43 to 63 is provided in the same manner as the first component member 30, and each of the conductive portions 43 to 63 is separated from the center point of the second to fourth component members 40 to 60 by a predetermined distance. The point is arranged symmetrically. And the distance between the center point of the 1st component member 30 and the electroconductive part 33 and the distance between the center point of the 2nd-4th component members 40-60 and the electroconductive part 43-63 are made equal. .

  The first to fourth constituent members 30 to 60 are configured as described above. In the present embodiment, the first to fourth constituent members 30 to 60 have the same shape, in other words, the same constituent members. That is, for example, considering the first component member 30 as a reference, the first component member 30 and the second to fourth component members 40 to 60 can be obtained by rotating the first component member 30 or reversing the front and back. Are consistent.

  As an example, the second component member 40 will be described with reference to FIG. FIG. 3A is a schematic plan view of the first component member 30 when viewed from the circuit board 10 side.

  As shown in FIG. 3A, one side of the first component member 30 extending in the left-right direction on the upper side of the paper is a, one side extending in the left-right direction on the lower side of the paper is c, and up and down on the right side of the paper. Assuming that one side extending is b and one side extending in the vertical direction on the left side of the page is d, the first component member 30 and the second component member 40 coincide by moving the first component member 30 as follows. . That is, for example, as shown in FIG. 3B, the first component member 30 is rotated 90 ° counterclockwise with the center point of the first component member 30 as a reference point, as shown in FIG. 3C. As described above, the first component member 30 and the second component member 40 coincide with each other by reversing the front and back (reversing the top and bottom) with reference to one side d of the first component member 30.

  Similarly, although not shown, for example, the first component member 30 and the third component member 50 coincide with each other by rotating the first component member 30 by 180 ° with the center point of the first component member 30 as a reference point. . Further, the first component member 30 is rotated 90 ° counterclockwise with the center point of the first component member 30 as a reference, and the front and back are reversed with reference to one side c of the first component member 30 (the left and right are reversed). By doing so, the first component member 30 and the fourth component member 60 coincide.

  And as FIG. 1 shows, the coil layer 21 is comprised by laminating | stacking such 1st-4th structural members 30-60. Specifically, the first and second component members 30 and 40, the second and third component members 40 and 50, and the third and fourth component members 50 and 60 are laminated and laminated. Yes. Further, in the coil layer 21, the second connection portion 32 b of the first component member 30 and the second connection portion 42 b of the second component member 40, the first connection portion 42 a of the second component member 40 and the third component member are provided. 50 first connection portion 52a, second connection portion 52b of third component member 50, and second connection portion 62b of fourth component member 60 are connected to each other so that wiring portions 32 to 62 and first and second components are connected. The coil 20 comprised by the connection parts 32a, 32b-62a, 62b is formed. Further, in the coil layer 21, the conductive portion 33 of the first component member 30 and the conductive portion 43 of the second component member 40, the conductive portion 43 of the second component member 40 and the conductive portion 53 of the third component member 50, The conductive portion 53 of the third component member 50 and the conductive portion 63 of the fourth component member 60 are connected.

  The coil layer 21 configured as described above is connected to the metal film 13 in which the first connection portion 32a of the first component member 30 and the conductive portion 33 of the first component member 30 are arranged on the circuit board 10. ing. In addition, a connection wiring portion 70 that electrically connects the second connection portion 62b of the fourth component member 60 and the conductive portion 63 is provided on a portion of the coil layer 21 opposite to the circuit board 10 side, 20 and the conductive portions 33 to 63 are electrically connected.

  The above is the configuration of the semiconductor device in this embodiment. Next, a method for manufacturing such a semiconductor device will be described with reference to FIGS.

First, as shown in FIG. 4A, a support substrate 80 having a flat surface is prepared, and a metal film 81 and a barrier film 82 are sequentially formed on the flat surface of the support substrate 80 by vapor deposition. A release layer 83 is formed. Although not particularly limited, in this embodiment, the metal film 81 is made of Bi of a low melting point metal having a liquefaction temperature of 271 ° C., and the barrier film 82 is made of SiO ₂ in which the metal element is not diffused. . The liquefaction temperature is a temperature at which the metal film 81 is completely liquefied.

  Next, as illustrated in FIG. 4B, the conductive portion 33 a and the first connection portion 32 a are formed on the release layer 83. The conductive portion 33a and the first connection portion 32a are formed by, for example, screen printing or mask vapor deposition.

  Subsequently, as shown in FIG. 4C, after applying a polyimide resin or the like by a spin coating method, the low dielectric constant film 31 is formed by heating and volatilizing the solvent.

  The low dielectric constant film 31 is formed such that portions of the conductive portion 33a and the first connection portion 32a opposite to the support substrate 80 are exposed. In addition, when the solvent is volatilized by heating, the liquefaction temperature of the metal film 81 is 271 ° C. in this embodiment, and therefore, the temperature is lower than 271 ° C. That is, the solvent is volatilized so that the metal film 81 is not heated to the liquefaction temperature or higher.

  Next, as shown in FIG. 4D, a conductive portion 33b that is electrically connected to the conductive portion 33a on the conductive portion 33a, and a first connection portion 32a that is electrically connected to the low dielectric constant film 31 are electrically connected. The wiring part 32 connected to the is formed by screen printing, mask vapor deposition or the like.

  As shown in FIG. 2, the wiring portion 32 is formed in a spiral shape that is wound from the inside toward the outside, and the center point of the spiral structure in the wiring portion 32 and the center of the support substrate 80. The pattern matches the dots. And the wiring part 32 has the outer edge part and the 1st connection part 32a connected.

  Subsequently, as shown in FIG. 4E, a conductive portion 33c electrically connected to the conductive portion 33b is formed on the conductive portion 33b, and the inner portion of the wiring portion 32 is connected to the conductive portion 33c. A second connection portion 32b that is electrically connected to the wiring portion 32 is formed. The conductive portion 33c and the second connection portion 32b are formed by, for example, screen printing or mask vapor deposition.

  Thereafter, as shown in FIG. 4F, after applying a polyimide resin or the like by a spin coating method, the low dielectric constant film 31 is formed by heating and volatilizing the solvent.

  The low dielectric constant film 31 is formed such that portions of the second connection portion 32b and the conductive portion 33c opposite to the support substrate 80 are exposed. Further, when the solvent is volatilized by heating, as in the step of FIG. 4C, it is performed at a temperature lower than 271 ° C. so that the metal film 81 is not heated to the liquefaction temperature or higher. By performing the steps described above, the first component member 30 is formed on the support substrate 80 via the release layer 83.

  When the wiring portion 32, the first and second connection portions 32a and 32b, and the conductive portions 33a to 33c are formed by screen printing in the steps of FIGS. 4B, 4D, and 4E. The step of removing the solvent by performing preliminary firing is performed. In this case, it is performed at a temperature lower than 271 ° C. so that the metal film 81 is not heated above the liquefaction temperature.

  Further, in the step of FIG. 4A, the barrier film 82 may be formed by a spin coating method. In this case, the solvent is removed so that the metal film 81 is not heated to the liquefying temperature or higher at a temperature lower than 271 ° C. Volatilize.

  Moreover, since the 2nd-4th structural members 40-60 are made into the same shape as the 1st structural member 30 as mentioned above, the same process as the said FIG. 4 (a)-(f) is performed, and it supports. A substrate in which second to fourth constituent members 40 to 60 are formed on a substrate 80 via a release layer 83 is prepared.

  After that, as shown in FIG. 5A, the first and second constituent members 30 and 40 arranged on the support substrate 80 are arranged to face each other, and then bonded together while being pressurized in the atmosphere or in a low vacuum. Thereby, the 1st laminated body 90 provided with the support substrate 80 in the both ends of the lamination direction is formed.

  Specifically, the second connecting portion 32b of the first constituent member 30 and the second connecting portion 42b of the second constituent member 40 are arranged to face each other, and are provided in the first and second constituent members 30, 40. While the flat surfaces of the supporting substrates 80 are parallel, the wiring portion 32 of the first component member 30 and the wiring portion 42 of the second component member 40 are connected via the second connection portions 32b and 42b. A stacked body 90 is formed.

  In order to arrange the second connection portion 32b of the first component member 30 and the second connection portion 42b of the second component member 40 to face each other, the following may be performed. That is, as shown in FIG. 3, after the second component member 40 is brought into a state of being coincident with the first component member 30, the second component member 40 is arranged counterclockwise with the second component member 40 disposed on the support substrate 80. By rotating 90 ° and reversing the front and back in the vertical direction, the second connection portion 32b of the first component member 30 and the second connection portion 42b of the second component member 40 can be arranged to face each other. This step can be performed, for example, by holding the support substrate 80 with a general bonding apparatus.

  The first and second component members 30 and 40 are bonded together by, for example, surface activation in which the bonding surfaces of the first and second component members 30 and 40 are irradiated with Ar ions to activate and bond the bonding surfaces. It is preferable to carry out by chemical bonding. When the first and second constituent members 30 and 40 are bonded together by surface activated bonding, the surface activated bonding is softened by heating the bonding members (low dielectric constant films 31 and 41) to the melting point or higher. Compared with a bonding method such as thermocompression bonding in this state, low-temperature bonding is performed. For this reason, generation | occurrence | production of the thermal stress by the difference in the thermal expansion coefficient of the wiring parts 32 and 42, the low dielectric constant films 31 and 41, the electroconductive parts 33 and 43, and each support substrate 80 can be suppressed, and the 1st laminated body 90 can be suppressed. Can be prevented from warping.

  Next, as shown in FIG. 5B, the support substrate 80 on the second component member 40 side in the first stacked body 90 is removed. Specifically, the metal substrate 81 formed on the support substrate 80 on the first component member 30 side is maintained at a temperature lower than the liquefaction temperature, and the support substrate on the second component member 40 side by lamp heating or pulse heating. 80 is heated, and the metal film 81 formed on the support substrate 80 on the second component member 40 side is heated to the liquefaction temperature or higher. The Bi element diffuses when the metal film 81 is liquefied. However, since the Bi element cannot diffuse into the barrier film 82, the Bi element does not diffuse into the second component member 40.

  Thereafter, the metal film 81 formed on the support substrate 80 on the second component member 40 side is cooled and solidified. At this time, the Bi element is segregated at the interface of the barrier film 82 at the interface between the metal film 81 and the barrier film 82, and the bondability (adhesiveness) between the metal film 81 and the barrier film 82 is extremely low. Become. Therefore, by holding the support substrate 80 on the first component member 30 side and sliding the support substrate 80 on the second component member 40 side, the support substrate 80 is removed from the interface between the metal film 81 and the barrier film 82. It can be easily peeled off.

  In this case, the support substrate 80 on the second component member 40 side can be peeled off when the metal film 81 is liquefied. However, if the support substrate 80 is peeled in a state where the metal film 81 is liquefied, the liquefied metal film 81 may adhere to the side surface of the support substrate 80 or the side surface of the second component member 40. It is preferable to peel the film 81 after making it into a solid layer.

In this embodiment, since the barrier film 82 is made of SiO ₂ and the low dielectric constant films 31 and 41 are made of polyimide resin, the thermal conductivity is low. Therefore, when the metal substrate 81 formed on the support substrate 80 is heated to 271 ° C. on the support substrate 80 side on the second component member 40 side, the support substrate 80 on the first component member 30 side is cooled. Even if this is not the case, the metal film 81 formed on the support substrate 80 is unlikely to reach the liquefaction temperature.

  However, it is preferable to heat the support substrate 80 on the second component member 40 side while preferably cooling the support substrate 80 on the first component member 30 side with water. Thereby, it can suppress that the metal film 81 formed on the support substrate 80 by the side of the 1st structural member 30 is heated more than liquefaction temperature. That is, the support substrate 80 on the second component member 40 side can be selectively peeled from the first stacked body 90.

  Thereafter, as shown in FIG. 5C, the barrier film 82 provided on the second component member 40 is removed by HF liquid cleaning or the like. In this case, when the metal film 81 remains as a residue, it is preferable to remove the barrier film 82 after removing the metal film 81 by ion milling or the like. The barrier film 82 provided on the second component member 40 is the barrier film 82 disposed between the second component member 40 and the removed support substrate 80.

  Further, although not particularly illustrated, the same process as in FIG. 5A is performed, and the third component member 50 and the fourth component member 60 are bonded together to form the second laminate. Then, the steps shown in FIGS. 5B and 5C are performed, and the second laminate is prepared by removing the support substrate 80 and the release layer 83 on the third component member 50 side.

  Subsequently, as shown in FIG. 5D, both sides of the first and second laminates 90 and 91 are disposed by pressing the substrates after the support substrate 80 is removed, and then bonding them while applying pressure. The coil layer 21 including the support substrate 80 is formed on the part.

  Specifically, of the first connection part 42 a located on the opposite side of the first stacked body 90 from the support substrate 80 side, in other words, of the first connection part 42 a of the second component member 40 and the second stacked body 91. The first connection part 52a located on the side opposite to the support substrate 80 side, in other words, the first connection part 52a of the third component member 50 is arranged to face each other. The first and fourth constituent members 30 to 60 are connected to the wiring portions 32 to 62 while the flat surfaces of the support substrates 80 provided in the first and second stacked bodies 90 and 91 are parallel to each other. The coil layer 21 is formed by being connected via the second connection portions 32a, 32b to 62a, 62b. Thereby, the coil 20 comprised by the wiring parts 32-62, the 1st connection parts 32a-62a, and the 2nd connection parts 32b-62b is comprised inside the coil layer 21. FIG.

  In order to arrange the first connection portion 42a of the second component member 40 and the first connection portion 52a of the third component member 50 to face each other, the following may be performed. That is, after the second stacked body 91 is arranged in a state that coincides with the first stacked body 90, the second stacked body 91 is rotated 90 ° counterclockwise, and then the front and back are reversed in the left-right direction. The first connection portion 42a of the second component member 40 and the first connection portion 52a of the third component member 50 can be arranged to face each other. Further, the first and second laminated bodies 90 and 91 can be bonded together by surface activation bonding as in the case of FIG.

  Next, as shown in FIG. 6A, the same steps as in FIGS. 5B and 5C are performed, and the support substrate 80 and the release layer 83 on the fourth component member 60 side of the coil layer 21 are performed. Is selectively removed.

  Then, as shown in FIG. 6 (b), the fourth component 60 is provided with a separation layer 100 on the side of the fourth component member 60, in which the adhesion (adhesion) is lowered by a chemical change made of an ultraviolet curable resin or the like. A substrate 101 is placed. As the holding substrate 101, a glass substrate or the like that can transmit ultraviolet rays is used.

  Subsequently, as shown in FIG. 6C, the same steps as in FIGS. 5B and 5C are performed, and the support substrate 80 and the release layer 83 on the first component member 30 side of the coil layer 21 are performed. Remove.

  Thereafter, the coil layer 21 manufactured by the above process is mounted on the circuit board 10. Specifically, as illustrated in FIG. 7A, first, the circuit board 10 is prepared, the insulating film 11 is disposed on the surface of the circuit board 10, and the first connection portion of the first component member 30 is provided. Opening 12 is formed at a position facing 32 a and conductive portion 33. Then, as shown in FIG. 7B, Au, Cu, Al, or the like is formed on the insulating film 11 and patterned by photoetching, and the metal film 13 is disposed in the opening 12.

  After that, as shown in FIG. 7C, what has been performed up to the process of FIG. 6C is prepared, and the coil layer 21 is mounted on the circuit board 10 while being held by the holding board 101. Specifically, the coil layer 21 is placed on the circuit board 10 so that the first connecting portion 32a of the first component 30 and the metal film 13 and the conductive portion 33 of the first component 30 and the metal film 13 are bonded. To be installed. In this case, for example, an underfill material may be disposed between the circuit board 10 and the coil layer 21 in order to improve the bonding strength of each bonding portion.

  Subsequently, as shown in FIG. 7D, the holding substrate 101 and the separation layer 100 arranged on the fourth component member 60 side are removed. The holding substrate 101 can be peeled off, for example, by irradiating ultraviolet rays having a predetermined wavelength from the fourth component member 60 side to cure the separation layer 100. The cured separation layer 100 can be removed, for example, by performing an ashing process or the like.

  After that, by forming the connection wiring portion 70 that electrically connects the conductive portion 63 of the fourth component member 60 and the first connection portion 62a and electrically connecting the coil 20 and the conductive portions 33 to 63, The semiconductor device is manufactured. In addition, the connection wiring part 70 can be formed by mask vapor deposition etc. of Cu, Au, Al, etc., for example.

  As described above, in this embodiment, the release layer 83 including the metal film 81 and the barrier film 82 is formed on the support substrate 80. Then, the metal film 81 formed on the support substrate 80 is heated above the liquefaction temperature by heating the support substrate 80 to be peeled off so that the metal film 81 formed on the support substrate 80 not to be peeled is not heated above the liquefaction temperature. Is heated. For this reason, only the support substrate 80 to be peeled can be selectively peeled, and the support substrate 80 is prevented from being peeled from both ends of the coil layer 21 (first and second laminates 90 and 91) at the same time. Can do.

  Further, by configuring the release layer 83 with the metal film 81 and the barrier film 82, heat resistance can be increased as compared with the case where the release layer 83 is configured with an ultraviolet curable resin. For this reason, when the low dielectric constant film 31 is formed by spin coating, or when the wiring portions 32 to 62 and the first and second connection portions 32a, 32b to 62a, and 62b are formed by screen printing, a solvent is used. Although a heating process for volatilizing is required, the heating temperature in this heating process can be increased. Therefore, it is possible to improve the selectivity of the material and the solvent constituting the wiring parts 32 to 62 and the first and second connection parts 32a, 32b to 62a and 62b.

  Moreover, since the temperature of the heating process for volatilizing the solvent can be increased, it is possible to suppress the solvent from remaining and to suppress the occurrence of solvent cracks.

  Further, in the present embodiment, after the coil layer 21 is formed, the holding substrate 101 having the separation layer 100 is disposed on the coil layer 21, and the coil layer 21 is mounted on the circuit substrate 10 while being held by the holding substrate 101. ing. Then, after mounting the coil layer 21 on the circuit board 10, the holding substrate 101 is peeled off by irradiating the separation layer 100 with ultraviolet rays. For this reason, compared with the case where the coil layer 21 is mounted on the circuit board 10 while being held by the support board 80, the circuit board 10 is not heated when the holding board 101 is peeled off. It is possible to suppress failure or malfunction.

(Second Embodiment)
A second embodiment of the present invention will be described. In the present embodiment, the configuration of the metal film 81 is changed with respect to the first embodiment, and the other aspects are the same as those in the first embodiment, and thus the description thereof is omitted here. 8A is a cross-sectional view corresponding to the process of FIG. 4A, and FIG. 8B is a cross-sectional view corresponding to the process of FIG. It is the figure which showed the state before peeling.

  In this embodiment, as shown in FIG. 8A, an Au element and an Sn element that are eutectic bonded to the Au element and have a higher bonding property to the barrier film 82 than the Au element are formed on the support substrate 80. The eutectic metal film 81a (metal film 81) is formed. Although not particularly limited, in this embodiment, the eutectic metal film 81a is formed so as to be Au80% Sn20%.

  Then, a barrier film 82 is formed on the eutectic metal film 81a in the same manner as described above to form a release layer 83. At this time, the eutectic metal film 81a contains an Sn element that has higher bondability with the barrier film 82 than the Au element. Further, by forming the eutectic metal film 81a using two kinds of metal elements, the surface is more likely to be uneven as compared with the case where the metal film 81 is formed only with a single metal element, and the barrier film The contact area with 82 is increased. Therefore, the bondability between the eutectic metal film 81a and the barrier film 82 when the barrier film 82 is formed can be improved, and the eutectic metal film 81a and the barrier film can be removed before the step of peeling the support substrate 80. Peeling from the interface with 82 can be suppressed.

  Subsequently, after performing the same steps as in FIGS. 4B to 5A to form the first stacked body 90 including the support substrates 80 at both ends in the stacking direction, the process of FIG. Then, the support substrate 80 on the second component member 40 side is removed. At this time, as shown in FIG. 8B, the eutectic metal film 81a is formed by heating and cooling the eutectic metal film 81a to form the eutectic alloy film 81b. Since Au element and Sn element cannot diffuse into the barrier film 82, these metal elements are segregated at the interface with the barrier film 82. Therefore, as in the first embodiment, it can be easily separated from the interface between the eutectic alloy film 81b and the barrier film 82.

  Note that the eutectic metal film 81a in this specification means that the metal elements constituting the eutectic metal film 81a are not eutectic bonded to each other, and each metal element is cooled by being heated to a temperature equal to or higher than the liquefaction temperature. Is a film constituting the eutectic alloy film 81b by eutectic bonding.

  Thereafter, the same process as in the first embodiment is performed to manufacture the semiconductor device shown in FIG.

  As described above, in the present embodiment, when forming the metal film 81, the eutectic metal film 81a is formed. For this reason, it is possible to suppress the occurrence of peeling from the interface between the eutectic metal film 81a (metal film 81) and the barrier film 82 before the step of heating the metal film 81 to the liquefaction temperature or higher.

  Further, by configuring the metal film 81 with a plurality of metal elements, the liquefaction temperature can be appropriately changed depending on the composition ratio, and the degree of freedom in design can be improved.

(Third embodiment)
A third embodiment of the present invention will be described. In the present embodiment, the configuration of the metal film 81 is changed with respect to the second embodiment, and the other aspects are the same as those of the second embodiment, and thus the description thereof is omitted here. 9A is a cross-sectional view corresponding to the process of FIG. 4A, and FIG. 9B is a cross-sectional view corresponding to the process of FIG. It is the figure which showed the state before peeling.

  In this embodiment, as shown in FIG. 9A, the eutectic metal film 81a is formed on the support substrate 80, and the adjustment film 81c that is eutectic bonded to the eutectic metal film 81a on the eutectic metal film 81a. To form the metal film 81. Although not particularly limited, in the present embodiment, the adjustment film 81c is made of Sn element.

Subsequently, after performing the same steps as in FIGS. 4B to 5A to form the first stacked body 90 including the support substrates 80 at both ends in the stacking direction, the process of FIG. Then, the support substrate 80 on the second component member 40 side is removed. At this time, as shown in FIG. 9B, by heating and cooling the metal film 81, the eutectic metal film 81a is eutectic bonded to the adjustment film 81c to form the eutectic alloy film 81b. . Therefore, as in the second embodiment, it can be easily separated from the interface between the eutectic alloy film 81b and the barrier film 82.
As described above, in the present embodiment, the adjustment film 81c is provided on the eutectic metal film 81a. Therefore, the composition of the eutectic alloy film 81b can be easily changed by changing the thickness and composition of the adjustment film 81c as appropriate, and the liquefaction temperature can also be easily changed. Therefore, the degree of freedom in design can be improved.

(Other embodiments)
In each of the above embodiments, as shown in FIGS. 5E to 5G, after forming the coil layer 21 including the support substrate 80 at both ends, the support substrate 80 on the fourth component member 60 side is removed. Then, the holding substrate 101 provided with the separation layer 100 is newly arranged, but it may be as follows. That is, after forming the coil layer 21 including the support substrate 80 at both ends, the support substrate 80 on the first component member 30 side is removed, and the coil layer 21 is held by the support substrate 80 on the fourth component member 60 side. It may be mounted on the circuit board 10.

  Moreover, although each said embodiment demonstrated what the coil layer 21 was comprised by laminating | stacking the 1st-4th structural members 30-60, the coil layer 21 is made into the 1st, 2nd structural member 30. , 40, or a plurality of components may be added. For example, when the coil layer 21 is composed only of the first and second constituent members 30 and 40, the coil layer 21 including the support substrates 80 at both ends in the stacking direction is formed in the process of FIG. The

  Further, in each of the above embodiments, the barrier film 82 may be made of glass or the like. In each of the above embodiments, the separation layer 100 may be made of a photosensitive resist or the like.

  In the above embodiments, the liquefaction temperature of the metal film 81 formed on the support substrate 80 on the second component member 40 side is lower than that of the metal film 81 formed on the support substrate 80 on the first component member 30 side. You may make it comprise with material. When such a metal film 81 is formed, when the metal film 81 formed on the support substrate 80 on the second component member 40 side is heated to the liquefaction temperature or higher, the metal film 81 on the support substrate 80 on the first component member 30 side is heated. It is possible to further suppress that the metal film 81 formed on is heated to the liquefaction temperature or higher.

  Furthermore, in the second and third embodiments, the eutectic metal film 81a has been described by taking the example made of AuSn. For example, the eutectic metal film 81a is made of AuGe, AuSi, PbSn, AlSn, or AgSi. Things can be used.

  In the second embodiment, the eutectic metal film 81a may include two or more kinds of metal elements.

  In the third embodiment, the example in which the metal film 81 is formed by the eutectic metal film 81a and the adjustment film 81c has been described. However, the metal film in which the adjustment film 81c is formed on the metal film made of a single metal element. It may be 81.

DESCRIPTION OF SYMBOLS 10 Circuit board 20 Coil 21 Coil layer 30 1st structural member 40 2nd structural member 50 3rd structural member 60 4th structural member 80 Support substrate 81 Metal film 82 Barrier film 83 Release layer

Claims (8)

In the method of manufacturing a semiconductor device in which a coil layer (21) including a coil (20) is mounted on a substrate (10),
Preparing two support substrates (80) having one surface;
A release layer forming step of forming a release layer (83) on the one surface of each of the support substrates;
A wiring portion (32 to 62) having a predetermined pattern, an insulating film (31 to 61) covering the wiring portion, and the wiring portion are exposed through the release layer on each of the support substrates and exposed from the insulating film. Forming a set of constituent members (30-60) configured as a set of connecting portions (32a, 32b-62a, 62b) to be performed;
The component members arranged on the two support substrates are arranged to face each other, bonded together while holding the support substrate while applying pressure, and the wiring portions of the component members are connected via the connection portions. Forming the coil layer including the coil constituted by the wiring portion and the connection portion and having the support substrate at both end portions in the stacking direction by performing a step;
A peeling step of selectively peeling the support substrate from the coil layer;
A mounting step of mounting the coil layer on the substrate;
In the release layer forming step, a step of forming a metal film and a step of forming a barrier film on which the metal element is not diffused on the metal film are performed,
In the peeling step, the metal film formed on the support substrate provided at one end of the coil layer is held at a temperature lower than a liquefaction temperature, and the metal layer is provided at the other end of the coil layer. A method for manufacturing a semiconductor device, comprising: heating the metal film formed on a support substrate to a temperature equal to or higher than a liquefaction temperature, thereby peeling the support substrate provided on the other end from the coil layer.   In the peeling step, the metal film formed on the support substrate provided at the other end of the coil layer is heated to a temperature equal to or higher than a liquefaction temperature and then cooled to a temperature lower than the liquefaction temperature, so that the metal film is a solid layer. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the support substrate provided at the other end of the coil layer is peeled in a state.   The said peeling process WHEREIN: The said support substrate provided in the other edge part of the said coil layer is heated, cooling the said support board provided in one edge part of the said coil layer, The said 1st aspect is characterized by the above-mentioned. Or the manufacturing method of the semiconductor device of 2.   In the step of forming the metal film, the eutectic metal film (81a) including a plurality of kinds of metal elements constituting the eutectic alloy film (81b) is formed by being cooled after being heated. A method for manufacturing a semiconductor device according to claim 1.   In the step of forming the metal film, an adjustment film (81c) containing a metal element that is eutectic-bonded to the eutectic metal film is formed on the eutectic metal film by being cooled after being heated. The method of manufacturing a semiconductor device according to claim 4.   The step of forming the metal film includes a step of forming a single metal film composed of a single element, and the single metal film by being cooled on the single metal film after being heated. The method for manufacturing a semiconductor device according to claim 1, further comprising: forming an adjustment film (81 c) containing a metal element to be eutectic bonded.   In the step of forming the coil layer, the constituent members arranged on the two support substrates are arranged to face each other, and then bonded together while being pressed to laminate the support substrates at both end portions in the lamination direction. A step of preparing two bodies, a step of performing the peeling step on each of the two laminated bodies, and a step of selectively peeling off the support substrate provided on the other end of the laminated body; The method further comprises a step of placing the support substrate on the side where the support substrate is peeled off, and bonding the substrate while pressing the support substrate while pressing the support substrate. The manufacturing method of the semiconductor device as described in any one of Claims 1-3. Prior to the step of mounting the coil layer, a holding substrate is provided via a separation layer (100) whose adhesiveness is reduced by chemical change at the other end of the coil layer from which the support substrate has been selectively removed. (101) and a step of heating the metal film formed on the support substrate provided at one end of the coil layer to a temperature equal to or higher than a liquefaction temperature and peeling the support substrate. Done
The method for manufacturing a semiconductor device according to claim 1, wherein in the mounting step, the coil layer is mounted on the substrate while being held by the holding substrate.

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