TWI466610B - Package structure and method for manufacturing same - Google Patents

Description

Package structure and manufacturing method thereof

The invention relates to a circuit board manufacturing technology, in particular to a package structure and a manufacturing method thereof.

One of the manufacturing methods of the package structure commonly used in the industry is: providing a copper-clad core board, the copper-clad core board comprising a first conductive circuit layer, a first insulating layer and a second conductive circuit layer; Forming a through hole penetrating through the copper core plate; providing an electronic component, a first outer conductive layer, a second insulating layer, a third insulating layer and a second outer conductive layer, wherein the electronic component The height is equivalent to the thickness of the first insulating layer of the copper-clad core board, the size of the electronic component is smaller than the size of the through-hole, and the second insulating layer and the third insulating layer have semi-curing properties; The electronic component is placed in the through hole, the electronic component is not in contact with the copper core plate, and the second insulating layer and the first outer conductive layer are sequentially laminated on the first conductive And a third insulating layer and a second outer conductive layer are sequentially laminated on the second conductive circuit layer, thereby forming a laminated plate, and pressing the laminated plate to make the first outer conductive layer , second insulating layer, first conductive circuit layer The first insulating layer, the second conductive circuit layer, the third insulating layer and the second outer conductive layer are solidified to form a copper-clad substrate, and the second insulating layer and the third insulating layer are heated to have fluidity. The electronic component is fixedly packaged in the copper clad substrate and is The second insulating layer and the third insulating layer are surrounded; the first outer conductive layer and the second outer conductive layer are formed into a line, and the electronic component and the first outer layer are formed by forming a conductive hole or the like The conductive layer is electrically connected, that is, a package structure in which components are embedded.

At present, the volume of electronic products is shrinking, and the package structure is also required to be thinner. However, in the package structure fabricated by the above method, in order to place the electronic component in the through hole of the first insulating layer, the thickness of the first insulating layer must be set to be equivalent to the thickness of the electronic component, thereby limiting The thickness of the first insulating layer is such that the first insulating layer cannot be thinned, which in turn limits the thinning of the overall thickness of the package structure. Therefore, how to develop a novel thin package structure manufacturing process and a novel thin package structure to meet the demand for the size and appearance of the application electronic product is an important goal of the related industry.

In view of this, it is necessary to provide a package structure and a manufacturing method thereof to reduce the overall thickness of the package structure to meet the demand for light and thin products in the market.

A manufacturing method of a package structure, comprising the steps of: providing a first copper foil, each of the mounting regions having at least one first through hole penetrating the first copper foil; forming a layer of non-distribution in the mounting area a conductive adhesive layer providing at least one component, each component being fixed to one of the mounting regions by the non-conductive adhesive layer, the component having a plurality of electrodes corresponding to the first through holes; An inner core plate, the inner core plate being formed with at least one second through hole penetrating the inner core plate, each of the second through holes corresponding to one of the elements, each of the second The through hole has a size larger than a size of the component corresponding to the second through hole; a first film, a second film, and a second copper foil are provided, wherein the first film is formed with at least one through One a fourth through hole of the film, each of the fourth through holes corresponding to one of the elements, each of the fourth through holes having a size larger than a size of the element corresponding to the fourth through hole; Laminating the first copper foil, the first film, the inner core board, the second film, and the second copper foil to form a laminated structure, wherein the element passes through the fourth through hole and is accommodated in the a second through hole; thermocompression bonding the laminated structure to cure the first film and the second film and surrounding the component; and the first copper foil corresponding to the first through hole Forming a fifth through hole on the non-conductive adhesive layer between the components, forming a plated metal layer on the hole walls of the first through hole and the fifth through hole to form a first conductive hole, wherein the first conductive hole is electrically connected The first copper foil and the electrode; and the first copper foil is formed into a first outer conductive layer, and the second copper foil is formed into a second outer conductive layer to form a package structure.

A package structure is fabricated by the above-described manufacturing method of a package structure, wherein the package structure includes a first outer conductive layer, a first film, an inner core, a second film, and a second outer layer which are sequentially arranged. a circuit layer; the first outer conductive layer is formed with a plurality of first through holes; the first film is formed with at least one fourth through hole; and the inner core plate is formed with at least one second through hole, a second through hole corresponding to the fourth through hole position; the package structure further includes at least one component, each of the components is disposed in one of the fourth through holes and accommodated in the fourth and fourth a through hole corresponding to the second through hole, and each of the elements is adhered to the first outer conductive layer by a non-conductive adhesive layer, and a fifth through hole is formed on the non-conductive adhesive layer The fifth through hole corresponds to the first through hole, the element has a plurality of electrodes corresponding to the first through hole, and the plurality of first through holes and the fifth through hole wall are formed Electroplated metal layer, each electrode by the electroplated metal and A wiring layer electrically connected to the conductive layer.

In the manufacturing method of the package structure and the package structure of the present invention, the inner core board is provided with a second through hole corresponding to the position of the component, and the first film is provided with a position corresponding to the component. a through hole, so that the component can be accommodated in the second through hole and the fourth through hole of the inner core board at the same time, that is, the thickness of the element can be compared with the inner core plate and the The sum of the thicknesses of the first film is equivalent, and the inner core plate may be a double plate or a multilayer plate of two or more layers, so that the thickness of the insulating layer may be smaller or even smaller than the thickness of the element, so that The thickness of the insulating layer can be thinner than the prior art, and the thickness of the entire package structure is also thinned, which meets the demand for lighter and thinner products in the market.

100‧‧‧ carrying board

110‧‧‧First copper foil

111‧‧‧First through hole

112‧‧‧through hole group

113‧‧‧Placement area

120‧‧‧Non-conductive adhesive layer

130‧‧‧ components

131‧‧‧electrode

140‧‧‧ Inner core board

141‧‧‧First inner conductive layer

142‧‧‧Insulation

143‧‧‧Second inner conductive layer

144‧‧‧second through hole

145‧‧‧ third through hole

146‧‧‧ Conductive metal layer

150‧‧‧first film

160‧‧‧second film

170‧‧‧second copper foil

200‧‧ ‧ superposed structure

210‧‧‧Multilayer substrate

151‧‧‧fourth through hole

121‧‧‧5th through hole

211‧‧‧ first blind hole

212‧‧‧Second blind hole

213‧‧‧ first incision

214‧‧‧second incision

215‧‧‧First conductive hole

216‧‧‧Second conductive hole

217‧‧‧Three conductive holes

218‧‧‧Electroplated metal layer

219‧‧‧ first copper

220‧‧‧Second copper

180‧‧‧First outer conductive layer

190‧‧‧Second outer conductive layer

300‧‧‧Package structure

1 is a schematic cross-sectional view of a carrier board and a first copper foil laminated together according to an embodiment of the present technical solution.

FIG. 2 is a schematic cross-sectional view showing a carrier plate and a first copper foil laminated on a first through hole, which are provided in an embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view showing the carrier plate and the first copper foil fixing component provided in the embodiment of the present invention.

4 is a schematic cross-sectional view of an inner core plate provided by an embodiment of the present technical solution.

FIG. 5 is a schematic cross-sectional view of a stacked structure provided by an embodiment of the present technical solution.

FIG. 6 is a schematic cross-sectional view of a superposed substrate according to an embodiment of the present technical solution.

FIG. 7 is a schematic cross-sectional view showing the non-conductive rubber layer in the first through hole of the laminated substrate and the first blind hole and the second blind hole in the laminated substrate provided by the embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view showing the first via hole, the first blind via hole, and the second blind via hole formed in the first through hole, the second conductive via, and the second conductive via, which are provided in the embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of a package structure provided by an embodiment of the present technical solution.

The method for fabricating the package structure and the package structure provided by the present technical solution will be further described in detail below with reference to the accompanying drawings and embodiments.

The manufacturing method of the package structure provided by the embodiment of the technical solution includes the following steps:

In the first step, referring to FIG. 1, a carrier board 100 and a first copper foil 110 stacked with the carrier board 100 are provided.

In this embodiment, the first copper foil 110 and the carrier plate 100 are both rectangular and have the same size. The thickness of the first copper foil 110 is a common thickness of the copper foil in the circuit board fabrication, preferably from 9 micrometers to 35 micrometers. The carrier board 100 functions to support the first copper foil 110. The carrier board 100 may be a metal plate such as a copper plate, an aluminum plate, a steel plate, or the like, or may be a copper-clad substrate or an uncoated copper commonly used in circuit board fabrication. The substrate of the foil or other heat-resistant hard material may be used as a support. In this embodiment, the material of the carrier plate 100 is the same as that of the first copper foil 110, and is a copper plate, which has a similar expansion and contraction with the first copper foil 110. It is recommended that the thickness of the carrier plate 100 is 35 micrometers or more to provide a better supporting effect.

In the second step, referring to FIG. 2-3, a plurality of first through holes 111 are formed on the carrier board 100 and the first copper foil 110 stacked.

The first through hole 111 is formed by mechanical drilling or laser drilling. The number and distribution of the first through holes 111 are based on the number, type, and wiring design of the components to be buried. Need to set. The plurality of first through holes 111 constitute at least one through hole group 112, and each of the through hole groups 112 includes at least one of the first through holes 111, and each of the through hole groups 112 corresponds to an element to be buried. The first copper foil 110 is disposed on the surface of the carrier plate 100 with at least one mounting area 113. Each of the mounting areas 113 has a corresponding through hole group 112 and is away from the other through hole groups. 112. In this embodiment, the number of the first through holes 111 is two, and the two first through holes 111 form a through hole group 112, and the through hole group 112 corresponds to an element to be buried. The through hole group 112 in the mounting area 113 has two of the first through holes 111. The shape of the mounting area 113 may be any shape, such as a circle, a square, an ellipse or the like. Preferably, the shape of the mounting area 113 is the same as the surface to be embedded in the surface to be mounted on the mounting area 113. . Preferably, the size of the mounting area 113 is slightly larger than the size of the surface of the component to be buried to be attached to the mounting area 113.

In the third step, referring to FIG. 3, a non-conductive paste layer (NCP) is formed on the mounting region 113, and a component 130 is attached to the sticker by the non-conductive adhesive layer 120. The mounting area 113 cures the non-conductive adhesive layer 120 to fix the component 130 to the mounting area 113.

The non-conductive adhesive layer 120 can be formed by needle dispensing, jet dispensing or printing. Preferably, the non-conductive adhesive layer 120 is formed by printing to make the formation position, shape, thickness and the like of the non-conductive adhesive layer 120 easier to control. In this embodiment, the non-conductive adhesive layer 120 is formed by printing the non-conductive adhesive on the mounting area 113. Since the two first through holes 111 are located in the mounting area 113, the non-conductive The glue layer 120 also fills the first through hole 111.

The non-conductive adhesive is a commonly used adhesive for component packaging, and is usually a non-conductive, thermosetting resin, preferably a thermosetting epoxy resin. The non-conductive adhesive layer 120 The curing method is heat curing.

In the present embodiment, the component 130 is a passive component having two electrodes 131. Of course, the component 130 may also be other electronic components such as an integrated circuit, etc. In addition, the number of the components 130 corresponds to the number and position of the through hole group 112 and the mounting area 113, that is, The element 130 can also be a complex number and can be a plurality of different types and sizes of components.

In the fourth step, referring to FIG. 4, an inner core plate 140 is provided.

This embodiment is described by taking two layers of the inner core plate 140 as an example. The inner core plate 140 includes a first inner conductive circuit layer 141, an insulating layer 142, and a second inner conductive circuit layer 143 which are sequentially stacked. The inner core plate 140 is formed with at least one second through hole 144 and at least one third through hole 145, and the second through hole 144 and the third through hole 145 are both penetrated through the first inner conductive layer 141. The insulating layer 142 and the second inner conductive circuit layer 143. The hole of the third through hole 145 is formed with a conductive metal layer 146 electrically connected to the first inner conductive circuit layer 141 and the second inner conductive circuit layer 143. Preferably, the conductive metal layer 146 is formed by an electroplating process, and preferably the conductive metal layer 146 is made of copper. The position and the number of the second through holes 144 respectively correspond to the position and the number of the elements 130, and the size of the second through holes 144 is larger than the size of the element 130 corresponding thereto to be able to accommodate the corresponding The second through hole 144 of the element 130 has a depth smaller than the height of the element 130, that is, the element 130 is higher than the second through hole 144 when it is received in the second through hole 144. Preferably, the shape of the cross section of the second through hole 144 is the same as the shape of the mounting area 113. Preferably, the size of the cross section of the second through hole 144 is the same as or slightly larger than the size of the mounting area 113. The wall of the second through hole 144 may be formed with a conductive metal layer to electrically connect the first inner conductive line The layer 141 and the second inner layer conductive wiring layer 143 may not form a conductive metal layer. In this embodiment, the second via hole 144 is also formed with a conductive metal layer 146 to electrically connect the first inner conductive layer 141 and the second inner conductive layer 143. The forming manner and material of the conductive metal layer 146 of the hole 144 hole wall are the same as the forming manner and material of the conductive metal layer 146 of the third through hole 145 hole wall.

In the fifth step, referring to FIG. 5-6, a first film 150, a second film 160, and a second copper foil 170 are provided, and the carrier board 100, the first copper foil 110, the first film 150, and the inner layer are sequentially laminated. The core plate 140, the second film 160 and the second copper foil 170 form a laminated structure 200, which is heat-compressed, and then the carrier plate 100 is removed to form a laminated substrate 210.

The first film 150 is a prepreg, and the material thereof may be a resin containing a reinforcing material such as a pure resin such as an epoxy resin or an acrylic resin or an epoxy resin such as a glass fiber cloth. The first film 150 is formed with a fourth through hole 151 penetrating the first film 150. The position and the number of the fourth through holes 151 correspond to the position and the number of the components 130. The through hole 151 has a size larger than the corresponding element 130 to accommodate the element 130 corresponding thereto, and the sum of the depth of the second through hole 144 and the depth of the fourth through hole 151 is greater than or equal to The height of element 130 is described. Preferably, the shape of the cross section of the fourth through hole 151 is the same as the shape of the mounting area 113. Preferably, the size of the cross section of the fourth through hole 151 is the same as or slightly larger than the size of the mounting area 113. In this embodiment, the number of the fourth through holes 151 is one, and the shape, position and size of the fourth through holes 151 are the same as the shape, position and size of the second through holes 144, and the second The sum of the depth of the through hole 144 and the depth of the fourth through hole 151 is equal to the height of the element 130.

The second film 160 is also a prepreg, and the material thereof may also be epoxy resin, Pure resin such as gram resin or fiberglass cloth epoxy resin.

The element 130 is passed through the fourth through hole 151 and received in the second through hole 144 when the above overlapping is performed. During the thermal pressing, the first film 150 and the second film 160 can flow under the thermal compression, so that the second through hole 144 and the fourth through hole 151 can be respectively filled, that is, the A gap between the fourth through hole 151 and the element 130 is filled by a portion of the first film 150 flowing into the fourth through hole 151 during thermocompression, the second through hole 144 and the The gap between the elements 130 is filled by the portion of the first film 150 and the second film 160 that flows into the second through hole 144 during the thermal pressing, so that the first film 150 after the thermocompression curing is completed. The second film 160 can securely surround the element 130.

The carrier plate 100 is removed by manual or mechanical cutting or the like to expose the first copper foil 110 to form a laminated substrate 210.

Referring to FIG. 7 , the non-conductive adhesive layer 120 in the first through hole 111 on the laminated substrate 210 and the first copper foil 110 corresponding to the first through hole 111 are removed. A plurality of first conductive vias 211 and second blind vias 212 are formed on opposite sides of the stacked substrate 210, respectively.

The removing the non-conductive adhesive layer 120 and forming the plurality of blind holes can be performed simultaneously. The non-conductive rubber layer 120 and the plurality of blind holes may be removed by a conventional method such as deep mechanical drilling or laser ablation. Before the deep mechanical drilling or laser ablation, a plurality of slits may be formed at predetermined positions of the first copper foil 110 and the second copper foil 170 to facilitate mechanical drilling or laser ablation.

In this embodiment, a plurality of first slits are formed at a position of the first copper foil 110 where the first blind via 211 is to be formed by a process of ruthenium film, exposure, development, etching, and stripping. 213 and a second second slit 214 is formed at a position of the second copper foil 170 where the second blind hole 212 is to be formed. The plurality of first slits 213 respectively penetrate the first copper foil 110, and the plurality of second slits 214 respectively penetrate the a second copper foil 170; removing the non-conductive adhesive layer 120 in the first through hole 111 by laser ablation and removing the first corresponding to the first through hole 111 by laser ablation a non-conductive adhesive layer 120 between the copper foil 110 and the component 130 to expose the plurality of electrodes 131 of the component 130, and forming a fifth pass between the first conductive foil 120 and the non-conductive adhesive layer 120 between the component 130 a hole 121, and a position corresponding to the first slit 213 of the first film 150 by laser ablation, forming a plurality of first blind holes 211 on the stacked substrate 210, and by laser A plurality of second blind holes 212 are formed on the laminated substrate 210 by ablating the position of the second film 160 corresponding to the second slit 214. The plurality of first blind holes 211 penetrate the first copper foil 110 and the first film 150, and the plurality of second blind holes 212 penetrate the second copper foil 170 and the second film 160.

Because laser drilling forms a blind hole by a high-energy laser ablation film, the ablation of the film will produce some resin slag, which will affect the quality of subsequent processing, so the technical solution is After the drilling, the blind hole and the first through hole 111 are subjected to desmear treatment. In this step, the slag formed by the laser drilling is removed by plasma treatment. Of course, the first blind hole 211 and the second blind hole 212 may not be formed; if necessary, a plurality of through holes penetrating the stacked substrate 210 may be formed on the laminated substrate 210.

In a seventh step, referring to FIG. 8 , a plating metal layer 218 is formed on the hole walls of the first through hole 111 , the fifth through hole 121 , the first blind hole 211 , and the second blind hole 212 , so that the The first through hole 111 and the fifth through hole 121 are formed to form a first conductive hole 215, and the first blind hole 211 and the second blind hole 212 are respectively formed into a second conductive hole. 216 and a third conductive hole 217.

The first conductive hole 215 electrically connects the first copper foil 110 and the electrode 131, the second conductive hole 216 electrically connects the first copper foil 110 and the first inner conductive circuit layer 141; The three conductive holes 217 electrically connect the second copper foil 170 and the second inner conductive circuit layer 143.

The plated metal layer 218 may be copper, tin, silver, or the like, preferably copper.

The plating can be selective plating or full plate plating. Selectively plating the first copper foil 110 and the second copper foil 170 except the first blind hole 211, the second blind hole 212 and the first through hole 111, and then the first A blind hole 211, a second blind hole 212, and a first through hole 111 are plated to finally remove the ruthenium film. The full-plate plating is not applicable to the ruthenium film covering, so that the first copper foil 110 and the first blind via 211, the second blind via 212 and the first via 111 are formed with the plating metal layer 218 simultaneously with the first copper foil 110 and The second copper foil 170 also forms a plated metal layer 218. In the embodiment, the full-plate plating is selected, that is, the first blind hole 211, the second blind hole 212, and the first via hole 111 are formed with the plating metal layer 218, and are also respectively formed on the first copper foil. The first copper 219 and the second copper 220 are plated on the 110 and the second copper foil 170.

The eighth step, referring to FIG. 8-9, the first copper foil 110 and the first surface copper 219 are formed into a first outer conductive layer 180 by using an image transfer process and an etching process, and the image transfer process and etching are performed. The second copper foil 170 and the second copper 220 are formed into a second outer conductive layer 190 to form a package structure 300.

Of course, after forming the first outer conductive layer 180 and forming the second outer conductive layer 190, the step of forming a solder resist layer and gold plating may be included; For more layers of the package structure 300, steps 5 to 8 may be repeated; the inner core board may also be a circuit board of two or more layers.

In the method of manufacturing the package structure 300 and the package structure of the present invention, the inner core board 140 is provided with a second through hole 144 corresponding to the position of the component 130, and the first film 150 and the component 130 A fourth through hole 151 is defined in the corresponding position, so that the component 130 can be accommodated in the second through hole 144 and the fourth through hole 151 of the inner core plate 140 at the same time, that is, the component 130 The thickness may be equivalent to the sum of the thicknesses of the inner core board 140 and the first film 150, and the inner core board 140 may be a double panel or a multilayer board of two or more layers, so that the insulating layer The thickness can be less than or even much smaller than the thickness of the element 130, so that the thickness of the insulating layer can be thinner than in the prior art, thereby further thinning the overall thickness of the package structure, in line with the demand for lighter and thinner products in the market.

However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

140‧‧‧ Inner core board

141‧‧‧First inner conductive layer

142‧‧‧Insulation

143‧‧‧Second inner conductive layer

150‧‧‧first film

160‧‧‧second film

180‧‧‧First outer conductive layer

190‧‧‧Second outer conductive layer

300‧‧‧Package structure

Claims (10)

A manufacturing method of a package structure, comprising the steps of: providing a first copper foil, wherein the first copper foil is distributed with at least one mounting area, and each mounting area has at least one through the first copper foil a first via hole; forming a non-conductive adhesive layer on the mounting area; providing at least one component, each component being fixed to one of the mounting regions by the non-conductive adhesive layer, the component having a plurality of The first through holes correspond to the electrodes; the inner layer core board includes at least two inner layer conductive circuit layers, and the inner layer core board is formed with at least one inner layer a second through hole of the core board, each of the second through holes corresponding to one of the elements, each of the second through holes having a size larger than a size of the element corresponding to the second through hole; Providing a first film, a second film, and a second copper foil, wherein the first film is formed with at least one fourth through hole penetrating the first film, each of the fourth through holes and one of the Corresponding to the components, each of the fourth through holes has a size larger than the first The through hole corresponds to the size of the component; the first copper foil, the first film, the inner core plate, the second film and the second copper foil are sequentially laminated to form a stacked structure, wherein the component passes through the The fourth through hole is accommodated in the second through hole; thermally laminating the overlapping structure to cure the first film and the second film and to fix the component; and the first Forming a fifth through hole on the non-conductive adhesive layer between the first copper foil and the component corresponding to the through hole, forming a plated metal layer on the hole wall of the first through hole and the fifth through hole to form a first conductive hole Wherein the first conductive via electrically connects the first copper foil and the electrode; The first copper foil is formed to form a first outer conductive layer, and the second copper foil is formed into a second outer conductive layer to form a package structure. The method of fabricating the package structure of claim 1, wherein the non-conductive adhesive layer simultaneously fills the first through hole, after the step of removing the carrier plate, and after the first through hole and the fifth through hole Before forming the plated metal layer, the hole wall further comprises the steps of: removing the non-conductive adhesive layer in the first through hole by laser ablation, and removing the first through hole by laser ablation The non-conductive glue layer between the first copper foil and the element forms the fifth through hole. The method for fabricating a package structure according to claim 2, wherein the laser ablation removes the non-conductive rubber layer in the first via hole, and forms a plurality of through the laser ablation And a first blind hole of the film and the first copper foil and a plurality of second blind holes penetrating the second film and the second copper foil. The method of fabricating a package structure according to claim 3, wherein the first via hole and the fifth via hole are formed to form a first conductive via, and a plating metal layer is formed on the first blind via hole wall. Thereby, the first blind via is formed to form a second conductive via, and a plating metal layer is formed on the second blind via sidewall to form the second blind via to form a third conductive via. The method of fabricating a package structure according to claim 1, wherein a sum of a depth of the second through hole and a depth of the fourth through hole is greater than or equal to a height of the element. The method of fabricating a package structure according to claim 1, wherein the inner core layer comprises a first inner conductive layer and a second inner conductive layer, and the second via hole is formed with a conductive a metal layer electrically connecting the first inner conductive circuit layer and the second inner conductive circuit layer. The method for fabricating a package structure according to claim 1, wherein the first copper foil is provided while a carrier plate is provided, and the carrier plate and the carrier plate are superposed on the first copper foil. Forming a through hole at the same position of the carrier plate while forming the first through hole, removing the portion after thermally pressing the stacked structure and before forming a plated metal layer on the hole wall of the first through hole Said carrier board. A package structure, which is manufactured by the method for fabricating the package structure of claim 1, the package structure comprising a first outer conductive layer, a first film, an inner core, a second film, and a second outer conductive layer; the first outer conductive layer is formed with a plurality of first through holes; the first film is formed with at least one fourth through hole; and the inner core includes at least two inner layers a circuit layer, the inner core plate is formed with at least one second through hole, the second through hole corresponding to the fourth through hole position; the package structure further includes at least one component, each of the components Provided in one of the fourth through holes and received in the second through hole corresponding to the fourth through hole, and each of the elements is connected to the first by a non-conductive adhesive layer The outer conductive circuit layer is pasted, the fifth conductive via is formed on the non-conductive adhesive layer, the fifth through-hole corresponds to the first through-hole, and the component has a plurality of the first through-hole Corresponding electrodes, and the plurality of first through holes and fifth through holes An electroplated metal layer is formed, and each electrode is electrically connected to the first outer conductive layer by the electroplated metal. The package structure of claim 8, wherein the first film and the second film are films which are cured by thermocompression, and a gap between each of the fourth through holes and the element is Depositing a portion of the first film into the fourth through hole during thermal pressing, wherein a gap between each of the second through holes and the element is performed by the first film and the second film A portion of the second through hole that is filled during the thermocompression is filled. The package structure of claim 8, wherein the inner core plate comprises a first inner conductive circuit layer and a second inner conductive circuit layer, and a hole of the second through hole is formed with a conductive metal layer. The conductive metal layer electrically connects the first inner conductive circuit layer and the second inner conductive circuit layer.