JP2014036026A5 - - Google Patents

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Publication number
JP2014036026A5
JP2014036026A5 JP2012174525A JP2012174525A JP2014036026A5 JP 2014036026 A5 JP2014036026 A5 JP 2014036026A5 JP 2012174525 A JP2012174525 A JP 2012174525A JP 2012174525 A JP2012174525 A JP 2012174525A JP 2014036026 A5 JP2014036026 A5 JP 2014036026A5
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JP
Japan
Prior art keywords
dielectric
processing apparatus
plasma processing
metal film
plasma
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JP2012174525A
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English (en)
Japanese (ja)
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JP6014408B2 (ja
JP2014036026A (ja
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Priority to JP2012174525A priority Critical patent/JP6014408B2/ja
Priority claimed from JP2012174525A external-priority patent/JP6014408B2/ja
Publication of JP2014036026A publication Critical patent/JP2014036026A/ja
Publication of JP2014036026A5 publication Critical patent/JP2014036026A5/ja
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Publication of JP6014408B2 publication Critical patent/JP6014408B2/ja
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JP2012174525A 2012-08-07 2012-08-07 プラズマ処理装置及びプラズマ処理方法 Active JP6014408B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012174525A JP6014408B2 (ja) 2012-08-07 2012-08-07 プラズマ処理装置及びプラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012174525A JP6014408B2 (ja) 2012-08-07 2012-08-07 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2014036026A JP2014036026A (ja) 2014-02-24
JP2014036026A5 true JP2014036026A5 (enrdf_load_stackoverflow) 2015-10-08
JP6014408B2 JP6014408B2 (ja) 2016-10-25

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JP2012174525A Active JP6014408B2 (ja) 2012-08-07 2012-08-07 プラズマ処理装置及びプラズマ処理方法

Country Status (1)

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JP (1) JP6014408B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9805951B1 (en) * 2016-04-15 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method of integration process for metal CMP
CN111868895B (zh) * 2018-03-22 2024-07-19 株式会社国际电气 基板处理装置、半导体装置的制造方法及静电屏蔽罩
US20210249233A1 (en) * 2019-12-18 2021-08-12 Hitachi High-Tech Corporation Plasma processing apparatus
JP7700637B2 (ja) * 2021-10-29 2025-07-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
JP2003152063A (ja) * 2001-11-09 2003-05-23 Applied Materials Inc 静電チャック及び半導体製造装置
JP5492578B2 (ja) * 2003-04-24 2014-05-14 東京エレクトロン株式会社 プラズマ処理装置
JP4992389B2 (ja) * 2006-11-06 2012-08-08 東京エレクトロン株式会社 載置装置、プラズマ処理装置及びプラズマ処理方法
JP4659771B2 (ja) * 2007-02-13 2011-03-30 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5227264B2 (ja) * 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム

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