JP2014017278A - 半導体装置の製造方法、およびそれを用いた薄膜トランジスタ - Google Patents

半導体装置の製造方法、およびそれを用いた薄膜トランジスタ Download PDF

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Publication number
JP2014017278A
JP2014017278A JP2010245789A JP2010245789A JP2014017278A JP 2014017278 A JP2014017278 A JP 2014017278A JP 2010245789 A JP2010245789 A JP 2010245789A JP 2010245789 A JP2010245789 A JP 2010245789A JP 2014017278 A JP2014017278 A JP 2014017278A
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JP
Japan
Prior art keywords
film
thickness
light
sio
case
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Pending
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JP2010245789A
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English (en)
Japanese (ja)
Inventor
Tadashi Morimoto
廉 森本
Nobuyasu Suzuki
信靖 鈴木
Yuta Sugawara
祐太 菅原
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Panasonic Corp
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Panasonic Corp
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Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to JP2010245789A priority Critical patent/JP2014017278A/ja
Priority to PCT/JP2011/006157 priority patent/WO2012060104A1/fr
Publication of JP2014017278A publication Critical patent/JP2014017278A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2010245789A 2010-11-02 2010-11-02 半導体装置の製造方法、およびそれを用いた薄膜トランジスタ Pending JP2014017278A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010245789A JP2014017278A (ja) 2010-11-02 2010-11-02 半導体装置の製造方法、およびそれを用いた薄膜トランジスタ
PCT/JP2011/006157 WO2012060104A1 (fr) 2010-11-02 2011-11-02 Procédé de fabrication d'un transistor, transistor et dispositif d'affichage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010245789A JP2014017278A (ja) 2010-11-02 2010-11-02 半導体装置の製造方法、およびそれを用いた薄膜トランジスタ

Publications (1)

Publication Number Publication Date
JP2014017278A true JP2014017278A (ja) 2014-01-30

Family

ID=46024229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010245789A Pending JP2014017278A (ja) 2010-11-02 2010-11-02 半導体装置の製造方法、およびそれを用いた薄膜トランジスタ

Country Status (2)

Country Link
JP (1) JP2014017278A (fr)
WO (1) WO2012060104A1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563196A (ja) * 1991-09-04 1993-03-12 Hitachi Ltd 薄膜半導体装置及びその製造方法並び液晶表示装置
JPH05267662A (ja) * 1992-03-19 1993-10-15 Hitachi Ltd 相補型薄膜半導体装置およびそれを用いた画像情報処理装置
JP2003347207A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体装置
JP4660074B2 (ja) * 2003-05-26 2011-03-30 富士フイルム株式会社 レーザアニール装置
JP5236929B2 (ja) * 2007-10-31 2013-07-17 富士フイルム株式会社 レーザアニール方法
JP2009218524A (ja) * 2008-03-13 2009-09-24 Hitachi Displays Ltd 平面表示装置の製造方法および平面表示装置
JP2010056433A (ja) * 2008-08-29 2010-03-11 Hitachi Displays Ltd 平面表示装置の製造方法
JP5515287B2 (ja) * 2008-12-22 2014-06-11 セイコーエプソン株式会社 表示装置、電子機器および表示装置の製造方法
JP5277020B2 (ja) * 2009-02-23 2013-08-28 三菱電機株式会社 表示装置

Also Published As

Publication number Publication date
WO2012060104A1 (fr) 2012-05-10

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