JP2014007208A - 半導体デバイス - Google Patents

半導体デバイス Download PDF

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Publication number
JP2014007208A
JP2014007208A JP2012140291A JP2012140291A JP2014007208A JP 2014007208 A JP2014007208 A JP 2014007208A JP 2012140291 A JP2012140291 A JP 2012140291A JP 2012140291 A JP2012140291 A JP 2012140291A JP 2014007208 A JP2014007208 A JP 2014007208A
Authority
JP
Japan
Prior art keywords
emitting diode
light emitting
voltage
light
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012140291A
Other languages
English (en)
Japanese (ja)
Inventor
Sang Muk Oh
オー，サング‐ムク
Yoshimi Shiotani
喜美 塩谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DAIKAN SHIGEN SYOSYA CO Ltd
ENERGY & HVAC CO Ltd
NANO MATERIAL KENKYUSHO KK
NSL CO
Original Assignee
DAIKAN SHIGEN SYOSYA CO Ltd
ENERGY & HVAC CO Ltd
NANO MATERIAL KENKYUSHO KK
NSL CO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DAIKAN SHIGEN SYOSYA CO Ltd, ENERGY & HVAC CO Ltd, NANO MATERIAL KENKYUSHO KK, NSL CO filed Critical DAIKAN SHIGEN SYOSYA CO Ltd
Priority to JP2012140291A priority Critical patent/JP2014007208A/ja
Priority to KR1020120077676A priority patent/KR101397727B1/ko
Publication of JP2014007208A publication Critical patent/JP2014007208A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H05B45/44—Details of LED load circuits with an active control inside an LED matrix
    • H05B45/46—Details of LED load circuits with an active control inside an LED matrix having LEDs disposed in parallel lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
JP2012140291A 2012-06-22 2012-06-22 半導体デバイス Pending JP2014007208A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012140291A JP2014007208A (ja) 2012-06-22 2012-06-22 半導体デバイス
KR1020120077676A KR101397727B1 (ko) 2012-06-22 2012-07-17 반도체 디바이스

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012140291A JP2014007208A (ja) 2012-06-22 2012-06-22 半導体デバイス

Publications (1)

Publication Number Publication Date
JP2014007208A true JP2014007208A (ja) 2014-01-16

Family

ID=50104701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012140291A Pending JP2014007208A (ja) 2012-06-22 2012-06-22 半導体デバイス

Country Status (2)

Country Link
JP (1) JP2014007208A (ko)
KR (1) KR101397727B1 (ko)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217456A (ja) * 2001-01-19 2002-08-02 Ngk Insulators Ltd 半導体発光素子
JP2006179672A (ja) * 2004-12-22 2006-07-06 Sony Corp 照明装置、及び画像表示装置
JP2006319333A (ja) * 2005-05-13 2006-11-24 Ind Technol Res Inst 交流発光装置及びその製造方法
JP2006324433A (ja) * 2005-05-18 2006-11-30 Rohm Co Ltd 半導体発光装置
JP2007173549A (ja) * 2005-12-22 2007-07-05 Rohm Co Ltd 発光装置
JP2008218043A (ja) * 2007-02-28 2008-09-18 Sharp Corp Ｌｅｄ駆動回路、及びｌｅｄ発光装置
JP2009516370A (ja) * 2005-11-10 2009-04-16 ソウル オプト デバイス カンパニー リミテッド 光結晶構造体を有する交流駆動型発光素子及びその製造方法
JP2010283354A (ja) * 2009-06-08 2010-12-16 Shogen Koden Kofun Yugenkoshi 発光ダイオード及びその製造方法
JP2011054967A (ja) * 2009-08-31 2011-03-17 Lg Innotek Co Ltd 発光素子及びこれを備える発光素子パッケージ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100716645B1 (ko) * 2005-10-31 2007-05-09 서울옵토디바이스주식회사 수직으로 적층된 발광 다이오드들을 갖는 발광 소자
KR100765385B1 (ko) * 2005-12-16 2007-10-10 서울옵토디바이스주식회사 다수의 발광 셀이 어레이된 발광 소자
KR101229835B1 (ko) * 2012-03-08 2013-02-04 서울옵토디바이스주식회사 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 및 이를 이용한 발광 디바이스

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217456A (ja) * 2001-01-19 2002-08-02 Ngk Insulators Ltd 半導体発光素子
JP2006179672A (ja) * 2004-12-22 2006-07-06 Sony Corp 照明装置、及び画像表示装置
JP2006319333A (ja) * 2005-05-13 2006-11-24 Ind Technol Res Inst 交流発光装置及びその製造方法
JP2006324433A (ja) * 2005-05-18 2006-11-30 Rohm Co Ltd 半導体発光装置
JP2009516370A (ja) * 2005-11-10 2009-04-16 ソウル オプト デバイス カンパニー リミテッド 光結晶構造体を有する交流駆動型発光素子及びその製造方法
JP2007173549A (ja) * 2005-12-22 2007-07-05 Rohm Co Ltd 発光装置
JP2008218043A (ja) * 2007-02-28 2008-09-18 Sharp Corp Ｌｅｄ駆動回路、及びｌｅｄ発光装置
JP2010283354A (ja) * 2009-06-08 2010-12-16 Shogen Koden Kofun Yugenkoshi 発光ダイオード及びその製造方法
JP2011054967A (ja) * 2009-08-31 2011-03-17 Lg Innotek Co Ltd 発光素子及びこれを備える発光素子パッケージ

Also Published As

Publication number Publication date
KR101397727B1 (ko) 2014-05-21
KR20140001719A (ko) 2014-01-07

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