JP2013545315A5 - - Google Patents

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Publication number
JP2013545315A5
JP2013545315A5 JP2013541985A JP2013541985A JP2013545315A5 JP 2013545315 A5 JP2013545315 A5 JP 2013545315A5 JP 2013541985 A JP2013541985 A JP 2013541985A JP 2013541985 A JP2013541985 A JP 2013541985A JP 2013545315 A5 JP2013545315 A5 JP 2013545315A5
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JP
Japan
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semiconductor
layer
material stack
undoped
work function
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JP2013541985A
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English (en)
Japanese (ja)
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JP2013545315A (ja
JP5669954B2 (ja
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Priority claimed from US12/960,589 external-priority patent/US8466473B2/en
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Publication of JP2013545315A5 publication Critical patent/JP2013545315A5/ja
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Publication of JP5669954B2 publication Critical patent/JP5669954B2/ja
Expired - Fee Related legal-status Critical Current
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JP2013541985A 2010-12-06 2011-09-15 高Ｋ／金属ゲートＭＯＳＦＥＴを有するＶｔ調整及び短チャネル制御のための構造体及び方法。 Expired - Fee Related JP5669954B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/960,589 US8466473B2 (en) 2010-12-06 2010-12-06 Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs
US12/960,589 2010-12-06
PCT/US2011/051675 WO2012078225A1 (en) 2010-12-06 2011-09-15 STRUCTURE AND METHOD FOR Vt TUNING AND SHORT CHANNEL CONTROL WITH HIGH K/METAL GATE MOSFETs

Publications (3)

Publication Number Publication Date
JP2013545315A JP2013545315A (ja) 2013-12-19
JP2013545315A5 true JP2013545315A5 (https=) 2014-08-14
JP5669954B2 JP5669954B2 (ja) 2015-02-18

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JP2013541985A Expired - Fee Related JP5669954B2 (ja) 2010-12-06 2011-09-15 高Ｋ／金属ゲートＭＯＳＦＥＴを有するＶｔ調整及び短チャネル制御のための構造体及び方法。

Country Status (7)

Country Link
US (1) US8466473B2 (https=)
EP (1) EP2641271B1 (https=)
JP (1) JP5669954B2 (https=)
CN (1) CN103262246B (https=)
BR (1) BR112013009219A2 (https=)
TW (1) TWI493710B (https=)
WO (1) WO2012078225A1 (https=)

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