JP2013543260A5 - - Google Patents

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Publication number
JP2013543260A5
JP2013543260A5 JP2013530733A JP2013530733A JP2013543260A5 JP 2013543260 A5 JP2013543260 A5 JP 2013543260A5 JP 2013530733 A JP2013530733 A JP 2013530733A JP 2013530733 A JP2013530733 A JP 2013530733A JP 2013543260 A5 JP2013543260 A5 JP 2013543260A5
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JP
Japan
Prior art keywords
igct
cells
cell
diode
arrangement
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JP2013530733A
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English (en)
Japanese (ja)
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JP2013543260A (ja
JP5972881B2 (ja
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Priority claimed from PCT/EP2011/066979 external-priority patent/WO2012041958A2/en
Publication of JP2013543260A publication Critical patent/JP2013543260A/ja
Publication of JP2013543260A5 publication Critical patent/JP2013543260A5/ja
Application granted granted Critical
Publication of JP5972881B2 publication Critical patent/JP5972881B2/ja
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JP2013530733A 2010-09-29 2011-09-29 逆導通パワー半導体デバイス Active JP5972881B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10181546.2 2010-09-29
EP10181546 2010-09-29
PCT/EP2011/066979 WO2012041958A2 (en) 2010-09-29 2011-09-29 Reverse-conducting power semiconductor device

Publications (3)

Publication Number Publication Date
JP2013543260A JP2013543260A (ja) 2013-11-28
JP2013543260A5 true JP2013543260A5 (https=) 2016-06-16
JP5972881B2 JP5972881B2 (ja) 2016-08-17

Family

ID=43743553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013530733A Active JP5972881B2 (ja) 2010-09-29 2011-09-29 逆導通パワー半導体デバイス

Country Status (6)

Country Link
US (1) US8847277B2 (https=)
EP (1) EP2622639B1 (https=)
JP (1) JP5972881B2 (https=)
KR (1) KR101749671B1 (https=)
CN (1) CN103119715B (https=)
WO (1) WO2012041958A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015078657A1 (en) * 2013-11-29 2015-06-04 Abb Technology Ag Reverse-conducting power semiconductor device
EP2930753A1 (en) 2014-04-09 2015-10-14 ABB Technology AG Turn-off power semiconductor device
WO2015154908A1 (en) * 2014-04-10 2015-10-15 Abb Technology Ag Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same
EP2960941B1 (en) * 2014-06-26 2017-01-04 ABB Schweiz AG Reverse-conducting power semiconductor device
WO2016096956A1 (en) 2014-12-17 2016-06-23 Abb Technology Ag Bidirectional power semiconductor device
CN104637997A (zh) * 2015-01-28 2015-05-20 电子科技大学 一种双模逆导门极换流晶闸管及其制备方法
EP3073530B1 (en) * 2015-03-23 2017-05-03 ABB Schweiz AG Reverse conducting power semiconductor device
CN105590959B (zh) * 2015-12-17 2018-05-29 清华大学 具有双p基区门阴极结构的门极换流晶闸管及其制备方法
JP7561196B2 (ja) * 2020-02-03 2024-10-03 ヒタチ・エナジー・リミテッド 逆導通パワー半導体デバイスおよびその製造方法
JP7432098B2 (ja) * 2020-03-31 2024-02-16 ヒタチ・エナジー・リミテッド サイリスタおよびバイポーラ接合トランジスタを備える電力半導体デバイス
EP4107783B1 (en) 2020-03-31 2023-12-20 Hitachi Energy Ltd Turn-off power semiconductor device with radial gate runners
CN220474611U (zh) 2020-08-31 2024-02-09 日立能源有限公司 电子器件和用于其的封装和半导体芯片
EP4053915B1 (en) * 2021-03-02 2024-06-19 Hitachi Energy Ltd Gate-commuted thyristor cell with a base region having a varying thickness
JP7739621B2 (ja) * 2021-12-03 2025-09-16 ヒタチ・エナジー・リミテッド 半導体デバイスおよび半導体デバイスを動作させるための方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342234B2 (https=) 1973-02-12 1978-11-09
CH668505A5 (de) 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
DE4403429C2 (de) 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement
US5594261A (en) * 1994-04-05 1997-01-14 Harris Corporation Device for isolating parallel sub-elements with reverse conducting diode regions
WO2000016406A1 (fr) * 1998-09-10 2000-03-23 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur
US20040142573A1 (en) * 2003-01-16 2004-07-22 Jun Osanai Method for manufacturing MOSFET semiconductor device
JP4471575B2 (ja) 2003-02-25 2010-06-02 三菱電機株式会社 圧接型半導体装置
US7489490B2 (en) * 2006-06-07 2009-02-10 International Rectifier Corporation Current limiting MOSFET structure for solid state relays

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