KR101749671B1 - 역-도통 전력 반도체 디바이스 - Google Patents

역-도통 전력 반도체 디바이스 Download PDF

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Publication number
KR101749671B1
KR101749671B1 KR1020137007778A KR20137007778A KR101749671B1 KR 101749671 B1 KR101749671 B1 KR 101749671B1 KR 1020137007778 A KR1020137007778 A KR 1020137007778A KR 20137007778 A KR20137007778 A KR 20137007778A KR 101749671 B1 KR101749671 B1 KR 101749671B1
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cells
igct
anode
cathode
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Korean (ko)
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KR20130100144A (ko
Inventor
무나프 라히모
마르틴 아놀드
토마스 스샤스니
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에이비비 슈바이쯔 아게
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Assigned to 히타치 에너지 스위처랜드 아게 reassignment 히타치 에너지 스위처랜드 아게 권리의 전부이전등록 Assignors: 에이비비 슈바이쯔 아게
Assigned to 히타치 에너지 리미티드 reassignment 히타치 에너지 리미티드 권리의 전부이전등록 Assignors: 히타치 에너지 스위처랜드 아게
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020137007778A 2010-09-29 2011-09-29 역-도통 전력 반도체 디바이스 Active KR101749671B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10181546 2010-09-29
EP10181546.2 2010-09-29
PCT/EP2011/066979 WO2012041958A2 (en) 2010-09-29 2011-09-29 Reverse-conducting power semiconductor device

Publications (2)

Publication Number Publication Date
KR20130100144A KR20130100144A (ko) 2013-09-09
KR101749671B1 true KR101749671B1 (ko) 2017-06-21

Family

ID=43743553

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137007778A Active KR101749671B1 (ko) 2010-09-29 2011-09-29 역-도통 전력 반도체 디바이스

Country Status (6)

Country Link
US (1) US8847277B2 (https=)
EP (1) EP2622639B1 (https=)
JP (1) JP5972881B2 (https=)
KR (1) KR101749671B1 (https=)
CN (1) CN103119715B (https=)
WO (1) WO2012041958A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015078657A1 (en) * 2013-11-29 2015-06-04 Abb Technology Ag Reverse-conducting power semiconductor device
EP2930753A1 (en) 2014-04-09 2015-10-14 ABB Technology AG Turn-off power semiconductor device
KR102064035B1 (ko) * 2014-04-10 2020-02-17 에이비비 슈바이쯔 아게 게이트 링의 향상된 센터링 및 고정을 갖는 턴-오프 전력 반도체 디바이스, 및 그것을 제조하기 위한 방법
EP2960941B1 (en) 2014-06-26 2017-01-04 ABB Schweiz AG Reverse-conducting power semiconductor device
JP6602380B2 (ja) * 2014-12-17 2019-11-06 アーベーベー・シュバイツ・アーゲー 双方向パワー半導体デバイス
CN104637997A (zh) * 2015-01-28 2015-05-20 电子科技大学 一种双模逆导门极换流晶闸管及其制备方法
EP3073530B1 (en) * 2015-03-23 2017-05-03 ABB Schweiz AG Reverse conducting power semiconductor device
CN105590959B (zh) * 2015-12-17 2018-05-29 清华大学 具有双p基区门阴极结构的门极换流晶闸管及其制备方法
WO2021156293A1 (en) 2020-02-03 2021-08-12 Abb Power Grids Switzerland Ag Reverse conducting power semiconductor device and method for manufacturing the same
CN115380388A (zh) * 2020-03-31 2022-11-22 日立能源瑞士股份公司 包括晶闸管和双极结型晶体管的功率半导体器件
JP7432093B2 (ja) 2020-03-31 2024-02-16 ヒタチ・エナジー・リミテッド ゲートランナ付きターンオフパワー半導体デバイス
WO2022043033A2 (en) 2020-08-31 2022-03-03 Hitachi Energy Switzerland Ag Electronic device, package and semiconductor chip therefore
EP4053915B1 (en) * 2021-03-02 2024-06-19 Hitachi Energy Ltd Gate-commuted thyristor cell with a base region having a varying thickness
JP7739621B2 (ja) * 2021-12-03 2025-09-16 ヒタチ・エナジー・リミテッド 半導体デバイスおよび半導体デバイスを動作させるための方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040164316A1 (en) 2003-02-25 2004-08-26 Mitsubishi Denki Kabushiki Kaisha Pressure contact type semiconductor device having dummy segment

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342234B2 (https=) 1973-02-12 1978-11-09
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
DE4403429C2 (de) 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement
US5594261A (en) 1994-04-05 1997-01-14 Harris Corporation Device for isolating parallel sub-elements with reverse conducting diode regions
JP3571353B2 (ja) * 1998-09-10 2004-09-29 三菱電機株式会社 半導体装置
US20040142573A1 (en) * 2003-01-16 2004-07-22 Jun Osanai Method for manufacturing MOSFET semiconductor device
US7489490B2 (en) * 2006-06-07 2009-02-10 International Rectifier Corporation Current limiting MOSFET structure for solid state relays

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040164316A1 (en) 2003-02-25 2004-08-26 Mitsubishi Denki Kabushiki Kaisha Pressure contact type semiconductor device having dummy segment

Also Published As

Publication number Publication date
CN103119715A (zh) 2013-05-22
US8847277B2 (en) 2014-09-30
KR20130100144A (ko) 2013-09-09
EP2622639B1 (en) 2015-01-21
CN103119715B (zh) 2016-08-03
JP5972881B2 (ja) 2016-08-17
EP2622639A2 (en) 2013-08-07
JP2013543260A (ja) 2013-11-28
WO2012041958A2 (en) 2012-04-05
US20130207157A1 (en) 2013-08-15
WO2012041958A3 (en) 2012-08-02

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