JP2013541223A - 量子ドットを用いた光学組立体 - Google Patents
量子ドットを用いた光学組立体 Download PDFInfo
- Publication number
- JP2013541223A JP2013541223A JP2013536594A JP2013536594A JP2013541223A JP 2013541223 A JP2013541223 A JP 2013541223A JP 2013536594 A JP2013536594 A JP 2013536594A JP 2013536594 A JP2013536594 A JP 2013536594A JP 2013541223 A JP2013541223 A JP 2013541223A
- Authority
- JP
- Japan
- Prior art keywords
- light
- led
- optical component
- quantum dots
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
204 LED
210 光学部品
212 量子ドット
220 ハウジング
222 上流端
224 下流端
226 励起光
228 キャビティ
230 放出光
Claims (8)
- 上流端(222)及び下流端(224)を有するハウジング(220)と、
前記ハウジングの前記上流端に配置され、第1波長を有する励起光(226)を発生するよう構成されたLED(204)と、
前記ハウジングの前記下流端に配置された光学部品(210)であって、前記LED及び前記光学部品の間にキャビティ(228)が形成されるように、前記LEDから離隔して配置された光学部品(210)と、
前記光学部品に配置された量子ドット(212)と
を具備する光学組立体(200)であって、
前記LEDで発生した前記励起光は、前記キャビティを通過して下流へ前記光学部品まで届き、
前記量子ドットが前記励起光の第1波長とは異なる第2波長を有する放出光(230)を生成するように、前記励起光は前記量子ドットを励起することを特徴とする光学組立体。 - 前記放出光は前記励起光より暖色であることを特徴とする請求項1記載の光学組立体。
- 前記放出光の前記第2波長は、前記励起光の前記第1波長より長いことを特徴とする請求項1記載の光学組立体。
- 前記LED及び前記光学部品間の前記キャビティは、前記量子ドットの熱的劣化を防止することを特徴とする請求項1記載の光学組立体。
- 前記光学部品は、内部全反射型レンズ又はマイクロレンズのうち少なくとも一方であることを特徴とする請求項1記載の光学組立体。
- 前記光学部品は、前記量子ドットでコーティングされていることを特徴とする請求項1記載の光学組立体。
- 前記量子ドットは、前記光学部品に配置されたラミネート層内に埋め込まれていることを特徴とする請求項1記載の光学組立体。
- 前記LEDは冷色光LEDであることを特徴とする請求項1記載の光学組立体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/917,209 US8362507B2 (en) | 2010-11-01 | 2010-11-01 | Optic assembly utilizing quantum dots |
US12/917,209 | 2010-11-01 | ||
PCT/US2011/001775 WO2012060856A1 (en) | 2010-11-01 | 2011-10-19 | Optic assembly utilizing quantum dots |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013541223A true JP2013541223A (ja) | 2013-11-07 |
Family
ID=44993863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013536594A Pending JP2013541223A (ja) | 2010-11-01 | 2011-10-19 | 量子ドットを用いた光学組立体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8362507B2 (ja) |
JP (1) | JP2013541223A (ja) |
KR (1) | KR20130072253A (ja) |
CN (1) | CN103190007B (ja) |
WO (1) | WO2012060856A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012088404A1 (en) * | 2010-12-23 | 2012-06-28 | Qd Vision, Inc. | Quantum dot containing optical element |
JP2015516691A (ja) * | 2012-05-14 | 2015-06-11 | コーニンクレッカ フィリップス エヌ ヴェ | ナノ構造蛍光体を有する発光装置 |
CN102980078A (zh) * | 2012-12-27 | 2013-03-20 | 杭州纳晶照明技术有限公司 | Led日光灯管 |
CN103441123A (zh) * | 2013-07-26 | 2013-12-11 | 京东方科技集团股份有限公司 | 一种led及显示设备 |
US9356204B2 (en) | 2013-12-05 | 2016-05-31 | Vizio Inc | Using quantum dots for extending the color gamut of LCD displays |
KR102166715B1 (ko) | 2014-04-02 | 2020-10-19 | 삼성디스플레이 주식회사 | 광원 유닛 및 그 제조 방법, 및 이를 포함하는 백라이트 어셈블리 |
CN104993038B (zh) * | 2015-05-26 | 2018-06-12 | 武汉华星光电技术有限公司 | 发光装置 |
CN106558576A (zh) * | 2015-09-24 | 2017-04-05 | 中强光电股份有限公司 | 白光光源模组及背光模组 |
CN106872376A (zh) * | 2017-02-15 | 2017-06-20 | 深圳立仪科技有限公司 | 光谱平衡的共聚焦测量装置及方法 |
WO2023287886A1 (en) | 2021-07-13 | 2023-01-19 | Nanosys, Inc. | Tunable illumination device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060066210A1 (en) * | 2004-09-30 | 2006-03-30 | Ng Kee Y | Light source with wavelength converting material |
JP2006135002A (ja) * | 2004-11-04 | 2006-05-25 | Koito Mfg Co Ltd | 発光デバイス及び車両用灯具 |
JP2010510654A (ja) * | 2006-11-17 | 2010-04-02 | レンセレイアー ポリテクニック インスティテュート | 高出力白色発光ダイオードおよびその製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3866836B2 (ja) | 1997-08-14 | 2007-01-10 | 富士通株式会社 | 非線形光学装置 |
CA2401459A1 (en) | 2000-03-06 | 2001-09-13 | Teledyne Lighting And Display Products, Inc. | Lighting apparatus having quantum dot layer |
US7054613B2 (en) | 2002-05-03 | 2006-05-30 | Telefonaktiebolaget Lm Ericsson (Publ) | SIM card to mobile device interface protection method and system |
US7102152B2 (en) | 2004-10-14 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
WO2005101530A1 (en) | 2004-04-19 | 2005-10-27 | Edward Sargent | Optically-regulated optical emission using colloidal quantum dot nanocrystals |
US20060113895A1 (en) | 2004-11-30 | 2006-06-01 | Baroky Tajul A | Light emitting device with multiple layers of quantum dots and method for making the device |
TWI267212B (en) | 2004-12-30 | 2006-11-21 | Ind Tech Res Inst | Quantum dots/quantum well light emitting diode |
US7346251B2 (en) | 2005-04-18 | 2008-03-18 | The Trustees Of Columbia University In The City Of New York | Light emission using quantum dot emitters in a photonic crystal |
US20070001182A1 (en) | 2005-06-30 | 2007-01-04 | 3M Innovative Properties Company | Structured phosphor tape article |
US7294861B2 (en) | 2005-06-30 | 2007-11-13 | 3M Innovative Properties Company | Phosphor tape article |
US7196354B1 (en) | 2005-09-29 | 2007-03-27 | Luminus Devices, Inc. | Wavelength-converting light-emitting devices |
US7498177B2 (en) | 2006-04-24 | 2009-03-03 | Jesus Martinez De La Fuente | Quantum dots and their uses |
US7703942B2 (en) | 2006-08-31 | 2010-04-27 | Rensselaer Polytechnic Institute | High-efficient light engines using light emitting diodes |
KR100835059B1 (ko) | 2007-07-06 | 2008-06-03 | 삼성전자주식회사 | 양자점 광소자 |
US20110012141A1 (en) * | 2009-07-15 | 2011-01-20 | Le Toquin Ronan P | Single-color wavelength-converted light emitting devices |
US20110006331A1 (en) * | 2010-09-20 | 2011-01-13 | Alexander Shaikevitch | Light-emitting device with a semi-remote phosphor coating |
-
2010
- 2010-11-01 US US12/917,209 patent/US8362507B2/en active Active
-
2011
- 2011-10-19 CN CN201180052463.7A patent/CN103190007B/zh active Active
- 2011-10-19 WO PCT/US2011/001775 patent/WO2012060856A1/en active Application Filing
- 2011-10-19 JP JP2013536594A patent/JP2013541223A/ja active Pending
- 2011-10-19 KR KR1020137010335A patent/KR20130072253A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060066210A1 (en) * | 2004-09-30 | 2006-03-30 | Ng Kee Y | Light source with wavelength converting material |
JP2006108661A (ja) * | 2004-09-30 | 2006-04-20 | Agilent Technol Inc | 波長変換材料を利用した光源 |
JP2006135002A (ja) * | 2004-11-04 | 2006-05-25 | Koito Mfg Co Ltd | 発光デバイス及び車両用灯具 |
JP2010510654A (ja) * | 2006-11-17 | 2010-04-02 | レンセレイアー ポリテクニック インスティテュート | 高出力白色発光ダイオードおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20130072253A (ko) | 2013-07-01 |
CN103190007B (zh) | 2016-05-18 |
US20120104437A1 (en) | 2012-05-03 |
CN103190007A (zh) | 2013-07-03 |
WO2012060856A1 (en) | 2012-05-10 |
US8362507B2 (en) | 2013-01-29 |
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