JP2013541194A - 高速及び低欠陥性のシリコン研磨組成物 - Google Patents
高速及び低欠陥性のシリコン研磨組成物 Download PDFInfo
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- JP2013541194A JP2013541194A JP2013527173A JP2013527173A JP2013541194A JP 2013541194 A JP2013541194 A JP 2013541194A JP 2013527173 A JP2013527173 A JP 2013527173A JP 2013527173 A JP2013527173 A JP 2013527173A JP 2013541194 A JP2013541194 A JP 2013541194A
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000011736 potassium bicarbonate Substances 0.000 description 2
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 2
- 235000015497 potassium bicarbonate Nutrition 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 235000011181 potassium carbonates Nutrition 0.000 description 2
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000006254 rheological additive Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- BWBHIIJKOYBHON-YFKPBYRVSA-N (2s)-2-(2-carboxyethylamino)pentanedioic acid Chemical compound OC(=O)CCN[C@H](C(O)=O)CCC(O)=O BWBHIIJKOYBHON-YFKPBYRVSA-N 0.000 description 1
- BTLHODXEDLCLAD-VKHMYHEASA-N (2s)-2-(carboxymethylamino)butanedioic acid Chemical compound OC(=O)CN[C@H](C(O)=O)CC(O)=O BTLHODXEDLCLAD-VKHMYHEASA-N 0.000 description 1
- AFENDNXGAFYKQO-VKHMYHEASA-N (S)-2-hydroxybutyric acid Chemical compound CC[C@H](O)C(O)=O AFENDNXGAFYKQO-VKHMYHEASA-N 0.000 description 1
- YXRKNIZYMIXSAD-UHFFFAOYSA-N 1,6-diisocyanatohexane Chemical compound O=C=NCCCCCCN=C=O.O=C=NCCCCCCN=C=O.O=C=NCCCCCCN=C=O YXRKNIZYMIXSAD-UHFFFAOYSA-N 0.000 description 1
- LJVQHXICFCZRJN-UHFFFAOYSA-N 1h-1,2,4-triazole-5-carboxylic acid Chemical compound OC(=O)C1=NC=NN1 LJVQHXICFCZRJN-UHFFFAOYSA-N 0.000 description 1
- LXOFYPKXCSULTL-UHFFFAOYSA-N 2,4,7,9-tetramethyldec-5-yne-4,7-diol Chemical compound CC(C)CC(C)(O)C#CC(C)(O)CC(C)C LXOFYPKXCSULTL-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- LODHFNUFVRVKTH-ZHACJKMWSA-N 2-hydroxy-n'-[(e)-3-phenylprop-2-enoyl]benzohydrazide Chemical compound OC1=CC=CC=C1C(=O)NNC(=O)\C=C\C1=CC=CC=C1 LODHFNUFVRVKTH-ZHACJKMWSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- RBYJWCRKFLGNDB-UHFFFAOYSA-N 5-methylpyrazine-2-carboxylic acid Chemical compound CC1=CN=C(C(O)=O)C=N1 RBYJWCRKFLGNDB-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004908 Emulsion polymer Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229920002907 Guar gum Polymers 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Natural products C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 1
- 229920002385 Sodium hyaluronate Polymers 0.000 description 1
- 229920002359 Tetronic® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000008365 aqueous carrier Substances 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- QXHJRNVPNQKMLR-UHFFFAOYSA-N cyclohexa-1,5-diene-1-carboxylic acid Chemical compound OC(=O)C1=CCCC=C1 QXHJRNVPNQKMLR-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- DXMRKRXRMGYFDG-UHFFFAOYSA-N dipotassium;hydrogen borate Chemical compound [K+].[K+].OB([O-])[O-] DXMRKRXRMGYFDG-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- GDCRSXZBSIRSFR-UHFFFAOYSA-N ethyl prop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CCOC(=O)C=C GDCRSXZBSIRSFR-UHFFFAOYSA-N 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 239000000665 guar gum Substances 0.000 description 1
- 235000010417 guar gum Nutrition 0.000 description 1
- 229960002154 guar gum Drugs 0.000 description 1
- 229920000591 gum Polymers 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- BXWNKGSJHAJOGX-UHFFFAOYSA-N hexadecan-1-ol Chemical class CCCCCCCCCCCCCCCCO BXWNKGSJHAJOGX-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000007529 inorganic bases Chemical group 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 125000003588 lysine group Chemical group [H]N([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(N([H])[H])C(*)=O 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- 229920004921 nonoxynol-15 Polymers 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical class CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000001814 pectin Substances 0.000 description 1
- 235000010987 pectin Nutrition 0.000 description 1
- 229920001277 pectin Polymers 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 150000004804 polysaccharides Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- NIPZZXUFJPQHNH-UHFFFAOYSA-N pyrazine-2-carboxylic acid Chemical compound OC(=O)C1=CN=CC=N1 NIPZZXUFJPQHNH-UHFFFAOYSA-N 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 125000003607 serino group Chemical group [H]N([H])[C@]([H])(C(=O)[*])C(O[H])([H])[H] 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229940010747 sodium hyaluronate Drugs 0.000 description 1
- YWIVKILSMZOHHF-QJZPQSOGSA-N sodium;(2s,3s,4s,5r,6r)-6-[(2s,3r,4r,5s,6r)-3-acetamido-2-[(2s,3s,4r,5r,6r)-6-[(2r,3r,4r,5s,6r)-3-acetamido-2,5-dihydroxy-6-(hydroxymethyl)oxan-4-yl]oxy-2-carboxy-4,5-dihydroxyoxan-3-yl]oxy-5-hydroxy-6-(hydroxymethyl)oxan-4-yl]oxy-3,4,5-trihydroxyoxane-2- Chemical compound [Na+].CC(=O)N[C@H]1[C@H](O)O[C@H](CO)[C@@H](O)[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@H](O[C@H]2[C@@H]([C@@H](O[C@H]3[C@@H]([C@@H](O)[C@H](O)[C@H](O3)C(O)=O)O)[C@H](O)[C@@H](CO)O2)NC(C)=O)[C@@H](C(O)=O)O1 YWIVKILSMZOHHF-QJZPQSOGSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical class [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- WUUHFRRPHJEEKV-UHFFFAOYSA-N tripotassium borate Chemical compound [K+].[K+].[K+].[O-]B([O-])[O-] WUUHFRRPHJEEKV-UHFFFAOYSA-N 0.000 description 1
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本例では、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により界面活性剤及び水を含む本発明の研磨組成物は、良好な全体としての基材研磨特性を示すことができることを実証する。
本例は本発明の研磨組成物が基材除去速度、欠陥及び曇り度に対して与える有機カルボン酸及びポリサッカリドの濃度の効果を示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により界面活性剤、及び、水を含む本発明の研磨組成物が良好な研磨特性を示すことを実証する。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基及び水を含む本発明の研磨組成物が良好な全体として研磨特性を示すことができることを実証する。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により界面活性剤、及び、水を含む、本発明の研磨組成物が良好な全体としての研磨特性を示すことができることを実証する。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合によりポリマー、及び、水を含む、本発明の研磨組成物を示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基及び水を含む本発明の研磨組成物を示す。本例は、ポリサッカリドの分子量が研磨組成物により示される基材除去速度に対して及ぼす効果をさらに示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基及び水を含む本発明の研磨組成物を示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により、ポリマー、及び水を含む、本発明の研磨組成物を示す。本例は、ポリマー(例えば、BG PW25)及び塩基の濃度が研磨組成物により示される基材除去速度、欠陥性及び曇り度に対して及ぼす効果をさらに示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により、ポリマー、及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により、ポリマー、及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により、界面活性剤又はポリマー、及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、ポリマー及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。本例は、また、ポリサッカリド、塩基及びポリマーの濃度が基材の除去速度、欠陥及び曇り度に対して及ぼす効果も示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、界面活性剤又はポリマー及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。本例は、また、界面活性剤の濃度が基材除去速度、欠陥及び曇り度に対して及ぼす効果も示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により、ポリマー、及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。本例は、また、界面活性剤及びポリマーの濃度が基材除去速度、欠陥及び曇り度に対して及ぼす効果も示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、ポリマー及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、界面活性剤又はポリマー及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。本例は、また、ポリマーの濃度が基材除去速度、欠陥及び曇り度に対して及ぼす効果も示す。
本例は、シリカ、有機カルボン酸、ポリサッカリド、塩基、場合により、還元剤及び水を含む、本発明の研磨組成物が良好な研磨特性を示すことを実証する。
Claims (23)
- (a)シリカ、
(b)(i)下記式
(ii)下記式
(iii)式(1)
(iv)カルボキシ置換ピラジン化合物、及び、
(v)カルボキシ置換トリアゾール化合物、
からなる群より選ばれる1種以上の有機カルボン酸、その塩又はその水和物、
(c)ヒドロキシアルキルセルロース、カラギーナン及びキサンタンガムからなる群より選ばれる1種以上のポリサッカリド、
(d)1種以上の塩基、
(e)場合により、1種以上の界面活性剤及び/又はポリマー、
(f)場合により、1種以上の還元剤、
(g)場合により、1種以上の殺生物剤、及び、
(h)水
から本質的になり、アルカリpHである、ケミカルメカニカル研磨組成物。 - 前記シリカは研磨組成物の0.001wt%〜20wt%の量で存在する、請求項1に記載の研磨組成物。
- 前記シリカは研磨組成物の0.05wt%〜10wt%の量で存在する、請求項2に記載の研磨組成物。
- 前記1種以上の有機カルボン酸は研磨組成物の0.0005wt%〜2wt%の合計量で存在する、請求項1に記載の研磨組成物。
- 前記ジカルボン酸はマロン酸、メチルマロン酸、ジメチルマロン酸、ブチルマロン酸、マレイン酸、メソシュウ酸ナトリウム一水和物(sodium mesooxalate monohydrate)、酒石酸、リンゴ酸、シュウ酸及びそれらの混合物からなる群より選ばれる、請求項1に記載の研磨組成物。
- 前記ジカルボン酸はマロン酸である、請求項5に記載の研磨組成物。
- 前記アミノ酸はグリシン、セリン、グルタミン酸、アスパラギン酸、リジン、ビシン、ニトリロ三酢酸、ピペコリン酸、ピコリン酸及びプロリンからなる群より選ばれる、請求項1に記載の研磨組成物。
- 少なくとも1種の有機カルボン酸はカルボキシ置換ピラジン化合物である、請求項1に記載の研磨組成物。
- 前記カルボキシ置換ピラジン化合物は3−アミノピラジン−2−カルボン酸である、請求項8に記載の研磨組成物。
- 前記カルボキシ置換トリアゾール化合物は3−アミノ−1,2,4−トリアゾール−5−カルボン酸である、請求項1に記載の研磨組成物。
- 芳香族ヒドロキシ酸は没食子酸、4−ヒドロキシ安息香酸、サリチル酸、2,4−ジヒドロキシ安息香酸、2,3−ジヒドロキシ安息香酸及び3,4−ジヒドロキシ安息香酸からなる群より選ばれる、請求項1に記載の研磨組成物。
- 少なくとも1種のポリサッカリドはヒドロキシエチルセルロースである、請求項1に記載の研磨組成物。
- ヒドロキシエチルセルロースの平均分子量は300,000g/モル以下である、請求項12に記載の研磨組成物。
- ヒドロキシエチルセルロースの平均分子量は10,000g/モル〜100,000g/モルである、請求項13に記載の研磨組成物。
- pHは8〜12である、請求項1に記載の研磨組成物。
- pHは9〜11である、請求項15に記載の研磨組成物。
- 1種以上の界面活性剤及び/又はポリマーは研磨組成物中に存在する、請求項1に記載の研磨組成物。
- 少なくとも1種の界面活性剤は非イオン性界面活性剤である、請求項17に記載の研磨組成物。
- 前記界面活性剤はアセチレンジオール界面活性剤又は疎水化(hydrophobated)ポリエチレングリコールである、請求項18に記載の研磨組成物。
- 前記1種以上のポリマーはポリエチレングリコールポリウレタン又は水溶性アクリルである、請求項17に記載の研磨組成物。
- 前記還元剤はメタ重亜硫酸カリウムである、請求項1に記載の研磨組成物。
- (i)研磨パッド及び請求項1〜21のいずれか1項に記載のケミカルメカニカル研磨組成物と基材を接触させること、
(ii)前記ケミカルメカニカル研磨組成物を介して前記基材に対して前記研磨パッドを移動させること、及び、
(iii)前記基材の少なくとも一部を研削して前記基材を研磨すること、
を含む、基材のケミカルメカニカル研磨方法。 - 前記基材はシリコンを含み、該シリコンの一部を研削して基材を研磨する、請求項22に記載の方法。
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