JP2013538455A - 基板加熱装置 - Google Patents
基板加熱装置 Download PDFInfo
- Publication number
- JP2013538455A JP2013538455A JP2013526482A JP2013526482A JP2013538455A JP 2013538455 A JP2013538455 A JP 2013538455A JP 2013526482 A JP2013526482 A JP 2013526482A JP 2013526482 A JP2013526482 A JP 2013526482A JP 2013538455 A JP2013538455 A JP 2013538455A
- Authority
- JP
- Japan
- Prior art keywords
- zone
- susceptor
- substrate
- thickness
- heating element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 107
- 239000000758 substrate Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000004891 communication Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 18
- 239000010409 thin film Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- IUHFWCGCSVTMPG-UHFFFAOYSA-N [C].[C] Chemical compound [C].[C] IUHFWCGCSVTMPG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37987610P | 2010-09-03 | 2010-09-03 | |
| US61/379,876 | 2010-09-03 | ||
| PCT/EP2011/065168 WO2012028704A1 (en) | 2010-09-03 | 2011-09-02 | Substrate heating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013538455A true JP2013538455A (ja) | 2013-10-10 |
| JP2013538455A5 JP2013538455A5 (enExample) | 2014-06-26 |
Family
ID=44735886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013526482A Withdrawn JP2013538455A (ja) | 2010-09-03 | 2011-09-02 | 基板加熱装置 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2612351A1 (enExample) |
| JP (1) | JP2013538455A (enExample) |
| KR (1) | KR20130102577A (enExample) |
| CN (1) | CN103081084A (enExample) |
| WO (1) | WO2012028704A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103614709B (zh) * | 2013-12-12 | 2015-10-07 | 济南大学 | 用于mocvd反应室的组合基座式电磁加热装置 |
| DE102016111236A1 (de) * | 2016-06-20 | 2017-12-21 | Heraeus Noblelight Gmbh | Substrat-Trägerelement für eine Trägerhorde, sowie Trägerhorde und Vorrichtung mit dem Substrat-Trägerelement |
| US10655226B2 (en) * | 2017-05-26 | 2020-05-19 | Applied Materials, Inc. | Apparatus and methods to improve ALD uniformity |
| KR102263718B1 (ko) * | 2019-06-10 | 2021-06-11 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| CN110396680A (zh) * | 2019-07-19 | 2019-11-01 | 西安奕斯伟硅片技术有限公司 | 一种外延反应设备 |
| CN111694181B (zh) * | 2020-07-07 | 2022-06-21 | 中航华东光电有限公司 | 低温均匀加热的液晶屏组件方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6054688A (en) * | 1997-06-25 | 2000-04-25 | Brooks Automation, Inc. | Hybrid heater with ceramic foil serrated plate and gas assist |
| US6399926B2 (en) * | 2000-04-03 | 2002-06-04 | Sigmameltec Ltd. | Heat-treating apparatus capable of high temperature uniformity |
| JP2002151412A (ja) * | 2000-10-30 | 2002-05-24 | Applied Materials Inc | 半導体製造装置 |
| US6962732B2 (en) | 2001-08-23 | 2005-11-08 | Applied Materials, Inc. | Process for controlling thin film uniformity and products produced thereby |
| CN100413024C (zh) * | 2003-08-18 | 2008-08-20 | 东京毅力科创株式会社 | 基板保持构件以及基板处理装置 |
| JP2006137650A (ja) * | 2004-11-15 | 2006-06-01 | Taiheiyo Cement Corp | 軽量高剛性セラミック部材 |
| JP4756695B2 (ja) * | 2006-02-20 | 2011-08-24 | コバレントマテリアル株式会社 | 面状ヒータ |
-
2011
- 2011-09-02 JP JP2013526482A patent/JP2013538455A/ja not_active Withdrawn
- 2011-09-02 KR KR1020137008445A patent/KR20130102577A/ko not_active Withdrawn
- 2011-09-02 EP EP11764119.1A patent/EP2612351A1/en not_active Withdrawn
- 2011-09-02 WO PCT/EP2011/065168 patent/WO2012028704A1/en not_active Ceased
- 2011-09-02 CN CN2011800426244A patent/CN103081084A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130102577A (ko) | 2013-09-17 |
| CN103081084A (zh) | 2013-05-01 |
| EP2612351A1 (en) | 2013-07-10 |
| WO2012028704A1 (en) | 2012-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140508 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140508 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20150107 |