JP2013534059A5 - - Google Patents

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Publication number
JP2013534059A5
JP2013534059A5 JP2013518723A JP2013518723A JP2013534059A5 JP 2013534059 A5 JP2013534059 A5 JP 2013534059A5 JP 2013518723 A JP2013518723 A JP 2013518723A JP 2013518723 A JP2013518723 A JP 2013518723A JP 2013534059 A5 JP2013534059 A5 JP 2013534059A5
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JP
Japan
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semiconductor
loss
laser device
semiconductor layer
doped region
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JP2013518723A
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Japanese (ja)
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JP5858997B2 (ja
JP2013534059A (ja
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Priority claimed from US12/827,776 external-priority patent/US8693509B2/en
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JP2013518723A 2010-06-30 2011-06-30 損失変調シリコンエバネセントレーザー Active JP5858997B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/827,776 US8693509B2 (en) 2010-06-30 2010-06-30 Loss modulated silicon evanescent lasers
US12/827,776 2010-06-30
PCT/US2011/042633 WO2012003346A1 (en) 2010-06-30 2011-06-30 Loss modulated silicon evanescent lasers

Publications (3)

Publication Number Publication Date
JP2013534059A JP2013534059A (ja) 2013-08-29
JP2013534059A5 true JP2013534059A5 (enExample) 2014-08-14
JP5858997B2 JP5858997B2 (ja) 2016-02-10

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Country Status (5)

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US (1) US8693509B2 (enExample)
JP (1) JP5858997B2 (enExample)
KR (1) KR101869414B1 (enExample)
CN (1) CN103119804B (enExample)
WO (1) WO2012003346A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080002929A1 (en) * 2006-06-30 2008-01-03 Bowers John E Electrically pumped semiconductor evanescent laser
US9316785B2 (en) 2013-10-09 2016-04-19 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8867578B2 (en) 2009-10-13 2014-10-21 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser for a cable TV transmitter
US8605766B2 (en) 2009-10-13 2013-12-10 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a mach zehnder modulator
US8611388B2 (en) * 2009-10-13 2013-12-17 Skorpios Technologies, Inc. Method and system for heterogeneous substrate bonding of waveguide receivers
US11181688B2 (en) 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US9496431B2 (en) 2013-10-09 2016-11-15 Skorpios Technologies, Inc. Coplanar integration of a direct-bandgap chip into a silicon photonic device
US8559470B2 (en) 2009-10-13 2013-10-15 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a phase modulator
US8630326B2 (en) * 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8615025B2 (en) 2009-10-13 2013-12-24 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser
KR101361058B1 (ko) * 2009-12-09 2014-02-12 한국전자통신연구원 광 소자를 포함하는 반도체 장치의 형성 방법
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
US9977188B2 (en) 2011-08-30 2018-05-22 Skorpios Technologies, Inc. Integrated photonics mode expander
CN102856789B (zh) * 2012-09-19 2014-01-01 中国科学院半导体研究所 基于微结构硅波导选频的混合硅单模环形腔激光器
US8938134B2 (en) 2012-12-21 2015-01-20 Alcatel Lucent Hybrid optical modulator for photonic integrated circuit devices
WO2014118836A1 (ja) * 2013-02-01 2014-08-07 日本電気株式会社 光機能集積ユニット及びその製造方法
JP2014165292A (ja) * 2013-02-25 2014-09-08 Hitachi Ltd 発光素子及びその製造方法並びに光送受信器
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
US9306672B2 (en) 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
JP2015089028A (ja) * 2013-10-31 2015-05-07 株式会社Ｎｔｔドコモ 中央制御局、無線基地局及び無線通信制御方法
US9360623B2 (en) * 2013-12-20 2016-06-07 The Regents Of The University Of California Bonding of heterogeneous material grown on silicon to a silicon photonic circuit
GB2522410A (en) 2014-01-20 2015-07-29 Rockley Photonics Ltd Tunable SOI laser
US9664855B2 (en) 2014-03-07 2017-05-30 Skorpios Technologies, Inc. Wide shoulder, high order mode filter for thick-silicon waveguides
JP2015184375A (ja) * 2014-03-20 2015-10-22 株式会社東芝 光配線デバイスおよびその製造方法
US10003173B2 (en) 2014-04-23 2018-06-19 Skorpios Technologies, Inc. Widely tunable laser control
US9658401B2 (en) 2014-05-27 2017-05-23 Skorpios Technologies, Inc. Waveguide mode expander having an amorphous-silicon shoulder
CN105487263B (zh) * 2014-06-30 2018-04-13 硅光电科技股份有限公司 硅基脊型波导调制器及其制造方法
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
JP5902267B1 (ja) 2014-09-19 2016-04-13 株式会社東芝 半導体発光素子
KR102171268B1 (ko) * 2014-09-30 2020-11-06 삼성전자 주식회사 하이브리드 실리콘 레이저 제조 방법
EP3286587A4 (en) 2015-04-20 2018-12-26 Skorpios Technologies, Inc. Vertical output couplers for photonic devices
US10043925B2 (en) 2015-08-27 2018-08-07 Massachusetts Institute Of Technology Guided-wave photodetector apparatus employing mid-bandgap states of semiconductor materials, and fabrication methods for same
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
US10693275B2 (en) 2017-08-08 2020-06-23 Nokia Solutions And Networks Oy Directly modulated laser having a variable light reflector
US10511143B2 (en) * 2017-08-31 2019-12-17 Globalfoundries Inc. III-V lasers with on-chip integration
US10649148B2 (en) 2017-10-25 2020-05-12 Skorpios Technologies, Inc. Multistage spot size converter in silicon photonics
KR102661948B1 (ko) 2018-01-19 2024-04-29 삼성전자주식회사 반도체 레이저 장치 및 그 제조 방법
US11360263B2 (en) 2019-01-31 2022-06-14 Skorpios Technologies. Inc. Self-aligned spot size converter
GB2589335B (en) * 2019-11-26 2022-12-14 Rockley Photonics Ltd Integrated III-V/silicon optoelectronic device and method of manufacture thereof
CN113703201B (zh) 2020-05-21 2025-08-05 中兴通讯股份有限公司 光调制器及其控制方法
JP7753012B2 (ja) * 2021-09-16 2025-10-14 浜松ホトニクス株式会社 光半導体素子、光学ユニット及び光学ユニットの製造方法
EP4664168A1 (en) * 2024-06-11 2025-12-17 Nokia Solutions and Networks Oy Semiconductor device and semiconductor device fabrication method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970959A (en) * 1973-04-30 1976-07-20 The Regents Of The University Of California Two dimensional distributed feedback devices and lasers
US4563765A (en) * 1982-01-29 1986-01-07 Massachusetts Institute Of Technology Intra-cavity loss-modulated diode laser
US5086430A (en) * 1990-12-14 1992-02-04 Bell Communications Research, Inc. Phase-locked array of reflectivity-modulated surface-emitting lasers
JP2002217484A (ja) * 2001-01-18 2002-08-02 Fujitsu Ltd 光半導体装置
US7613401B2 (en) * 2002-12-03 2009-11-03 Finisar Corporation Optical FM source based on intra-cavity phase and amplitude modulation in lasers
US7262902B2 (en) * 2004-10-20 2007-08-28 Photonic Systems, Inc. High gain resonant modulator system and method
US7751654B2 (en) * 2005-03-04 2010-07-06 Cornell Research Foundation, Inc. Electro-optic modulation
US8106379B2 (en) * 2006-04-26 2012-01-31 The Regents Of The University Of California Hybrid silicon evanescent photodetectors
US7257283B1 (en) * 2006-06-30 2007-08-14 Intel Corporation Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array
US20080002929A1 (en) * 2006-06-30 2008-01-03 Bowers John E Electrically pumped semiconductor evanescent laser
US7982944B2 (en) * 2007-05-04 2011-07-19 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Method and apparatus for optical frequency comb generation using a monolithic micro-resonator
EP2243152A4 (en) * 2008-01-18 2015-06-17 Univ California INTEGRATION PLATFORM CONNECTED TO A HYBRID SILICON-LASER-QUANTUM-TRAY MIXING LAYER FOR ADVANCED PHOTONIC CIRCUITS WITH ELECTRO-ABSORPTION MODULATORS
KR20110007617A (ko) * 2008-05-06 2011-01-24 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 마이크로 링 레이저의 시스템 및 방법
JP2010102045A (ja) * 2008-10-22 2010-05-06 Furukawa Electric Co Ltd:The モード同期半導体レーザ
US8340478B2 (en) * 2008-12-03 2012-12-25 Massachusetts Institute Of Technology Resonant optical modulators

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