JP5858997B2 - 損失変調シリコンエバネセントレーザー - Google Patents

損失変調シリコンエバネセントレーザー Download PDF

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Publication number
JP5858997B2
JP5858997B2 JP2013518723A JP2013518723A JP5858997B2 JP 5858997 B2 JP5858997 B2 JP 5858997B2 JP 2013518723 A JP2013518723 A JP 2013518723A JP 2013518723 A JP2013518723 A JP 2013518723A JP 5858997 B2 JP5858997 B2 JP 5858997B2
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loss
semiconductor
waveguide
type doped
semiconductor layer
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Japanese (ja)
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JP2013534059A (ja
JP2013534059A5 (enExample
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ジョン・イー・バウワーズ
ダオシン・ダイ
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University of California
University of California Berkeley
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University of California San Diego UCSD
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
JP2013518723A 2010-06-30 2011-06-30 損失変調シリコンエバネセントレーザー Active JP5858997B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/827,776 US8693509B2 (en) 2010-06-30 2010-06-30 Loss modulated silicon evanescent lasers
US12/827,776 2010-06-30
PCT/US2011/042633 WO2012003346A1 (en) 2010-06-30 2011-06-30 Loss modulated silicon evanescent lasers

Publications (3)

Publication Number Publication Date
JP2013534059A JP2013534059A (ja) 2013-08-29
JP2013534059A5 JP2013534059A5 (enExample) 2014-08-14
JP5858997B2 true JP5858997B2 (ja) 2016-02-10

Family

ID=45399696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013518723A Active JP5858997B2 (ja) 2010-06-30 2011-06-30 損失変調シリコンエバネセントレーザー

Country Status (5)

Country Link
US (1) US8693509B2 (enExample)
JP (1) JP5858997B2 (enExample)
KR (1) KR101869414B1 (enExample)
CN (1) CN103119804B (enExample)
WO (1) WO2012003346A1 (enExample)

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US11233374B2 (en) 2018-01-19 2022-01-25 Samsung Electronics Co., Ltd. Semiconductor laser device and method of manufacturing the same

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US8605766B2 (en) 2009-10-13 2013-12-10 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a mach zehnder modulator
US8611388B2 (en) * 2009-10-13 2013-12-17 Skorpios Technologies, Inc. Method and system for heterogeneous substrate bonding of waveguide receivers
US11181688B2 (en) 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
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US8559470B2 (en) 2009-10-13 2013-10-15 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a phase modulator
US8630326B2 (en) * 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
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US8938134B2 (en) 2012-12-21 2015-01-20 Alcatel Lucent Hybrid optical modulator for photonic integrated circuit devices
WO2014118836A1 (ja) * 2013-02-01 2014-08-07 日本電気株式会社 光機能集積ユニット及びその製造方法
JP2014165292A (ja) * 2013-02-25 2014-09-08 Hitachi Ltd 発光素子及びその製造方法並びに光送受信器
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
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US9360623B2 (en) * 2013-12-20 2016-06-07 The Regents Of The University Of California Bonding of heterogeneous material grown on silicon to a silicon photonic circuit
GB2522410A (en) 2014-01-20 2015-07-29 Rockley Photonics Ltd Tunable SOI laser
US9664855B2 (en) 2014-03-07 2017-05-30 Skorpios Technologies, Inc. Wide shoulder, high order mode filter for thick-silicon waveguides
JP2015184375A (ja) * 2014-03-20 2015-10-22 株式会社東芝 光配線デバイスおよびその製造方法
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US9658401B2 (en) 2014-05-27 2017-05-23 Skorpios Technologies, Inc. Waveguide mode expander having an amorphous-silicon shoulder
CN105487263B (zh) * 2014-06-30 2018-04-13 硅光电科技股份有限公司 硅基脊型波导调制器及其制造方法
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
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KR102171268B1 (ko) * 2014-09-30 2020-11-06 삼성전자 주식회사 하이브리드 실리콘 레이저 제조 방법
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Also Published As

Publication number Publication date
KR20130102528A (ko) 2013-09-17
CN103119804B (zh) 2016-04-13
CN103119804A (zh) 2013-05-22
US8693509B2 (en) 2014-04-08
KR101869414B1 (ko) 2018-07-20
US20120002694A1 (en) 2012-01-05
WO2012003346A1 (en) 2012-01-05
JP2013534059A (ja) 2013-08-29

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