JP2013524506A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013524506A5 JP2013524506A5 JP2013502561A JP2013502561A JP2013524506A5 JP 2013524506 A5 JP2013524506 A5 JP 2013524506A5 JP 2013502561 A JP2013502561 A JP 2013502561A JP 2013502561 A JP2013502561 A JP 2013502561A JP 2013524506 A5 JP2013524506 A5 JP 2013524506A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive
- conductive layer
- interconnect
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 15
- 238000001465 metallisation Methods 0.000 claims 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 10
- 229910052782 aluminium Inorganic materials 0.000 claims 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 7
- 229920005591 polysilicon Polymers 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 6
- 229910052802 copper Inorganic materials 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 239000004952 Polyamide Substances 0.000 claims 1
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/750,408 | 2010-03-30 | ||
| US12/750,408 US8304851B2 (en) | 2010-03-30 | 2010-03-30 | Semiconductor thermocouple and sensor |
| PCT/US2010/062055 WO2011126530A1 (en) | 2010-03-30 | 2010-12-23 | Semiconductor thermocouple and sensor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013524506A JP2013524506A (ja) | 2013-06-17 |
| JP2013524506A5 true JP2013524506A5 (https=) | 2014-02-06 |
| JP6038771B2 JP6038771B2 (ja) | 2016-12-07 |
Family
ID=44708663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013502561A Active JP6038771B2 (ja) | 2010-03-30 | 2010-12-23 | 半導体熱電対及びセンサ |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8304851B2 (https=) |
| JP (1) | JP6038771B2 (https=) |
| CN (2) | CN107068635B (https=) |
| WO (1) | WO2011126530A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2973164B1 (fr) * | 2011-03-25 | 2013-04-26 | Commissariat Energie Atomique | Capteur differentiel de temperature et ses capacites en technologie cmos/bicmos |
| US10529641B2 (en) * | 2016-11-26 | 2020-01-07 | Texas Instruments Incorporated | Integrated circuit nanoparticle thermal routing structure over interconnect region |
| US10672969B2 (en) | 2017-06-29 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermocouple device |
| US11312621B2 (en) | 2018-08-06 | 2022-04-26 | Invensense, Inc. | Sensing thermal gradients within a microelectromechanical device |
| AU2019384823A1 (en) * | 2018-11-21 | 2021-06-03 | Mark DERZON | Radiation powered high dose rate and high dose radiation sensor |
| US11635334B2 (en) * | 2020-06-30 | 2023-04-25 | Apple Inc. | Miniature external temperature sensing device for estimating subsurface tissue temperatures |
| US11408778B2 (en) | 2020-07-21 | 2022-08-09 | Apple Inc. | Temperature gradient sensing in portable electronic devices |
| US11771329B2 (en) | 2020-09-24 | 2023-10-03 | Apple Inc. | Flexible temperature sensing devices for body temperature sensing |
| US12575739B2 (en) | 2021-09-21 | 2026-03-17 | Apple Inc. | Distributed sensor network for measurement of biometric parameter |
| US12460976B2 (en) * | 2022-06-06 | 2025-11-04 | Microchip Technology Incorporated | Integrated thermocouple |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3393328A (en) | 1964-09-04 | 1968-07-16 | Texas Instruments Inc | Thermal coupling elements |
| JPS6140523A (ja) * | 1984-08-01 | 1986-02-26 | Matsushita Electric Ind Co Ltd | 熱電堆型赤外検出素子 |
| US5343064A (en) | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
| US5059543A (en) | 1990-09-21 | 1991-10-22 | The Board Of Regents Acting For And On Behalf Of The University Of Michigan | Method of manufacturing thermopile infrared detector |
| US5689087A (en) | 1994-10-04 | 1997-11-18 | Santa Barbara Research Center | Integrated thermopile sensor for automotive, spectroscopic and imaging applications, and methods of fabricating same |
| US5909004A (en) | 1996-04-17 | 1999-06-01 | General Electric Company | Thermocouple array and method of fabrication |
| JP2001208606A (ja) * | 2000-01-27 | 2001-08-03 | Alps Electric Co Ltd | 赤外線センサ |
| JP2001349787A (ja) | 2000-06-06 | 2001-12-21 | Seiko Epson Corp | 赤外線検出素子および測温計 |
| JP4009046B2 (ja) | 2001-04-10 | 2007-11-14 | 浜松ホトニクス株式会社 | 赤外線センサ |
| US6531899B1 (en) | 2001-12-27 | 2003-03-11 | Texas Instruments Incorporated | Integrated differential current comparator with input to output electrical isolation |
| US6793389B2 (en) | 2002-02-04 | 2004-09-21 | Delphi Technologies, Inc. | Monolithically-integrated infrared sensor |
| US6828172B2 (en) | 2002-02-04 | 2004-12-07 | Delphi Technologies, Inc. | Process for a monolithically-integrated micromachined sensor and circuit |
| CN1221213C (zh) * | 2002-06-25 | 2005-10-05 | 祥群科技股份有限公司 | 温度传感器及其运用该温度传感器的指纹辨识晶片 |
| JP2004033610A (ja) * | 2002-07-05 | 2004-02-05 | Lightuning Technology Inc | 温度差検出セル及びそれを応用した指紋サーモグラフ読み取り装置 |
| US6987223B2 (en) | 2002-08-28 | 2006-01-17 | Delphi Technologies, Inc. | Heat sink for silicon thermopile |
| US7042690B2 (en) | 2002-12-19 | 2006-05-09 | Texas Instruments Incorporated | Power-line, differential, isolation loss detector |
| US7406185B2 (en) * | 2003-04-16 | 2008-07-29 | Ligh Tuning Technology Inc. | Thermoelectric sensor for fingerprint thermal imaging |
| EP1671261A2 (en) * | 2003-09-05 | 2006-06-21 | Authentec, Inc. | Multi-biometric finger sensor using different biometrics having different selectivities and associated methods |
| JP2005241457A (ja) * | 2004-02-26 | 2005-09-08 | Hamamatsu Photonics Kk | 赤外線センサ及びその製造方法 |
| US20070095381A1 (en) | 2005-10-28 | 2007-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacked thermoelectric device for power generation |
| ATE468615T1 (de) * | 2006-07-24 | 2010-06-15 | Fiat Ricerche | Vorrichtung zur wandlung von elektromagnetischer strahlung in elektrische energie und korrespondierende wandlungsverfahren |
| JP2009210289A (ja) * | 2008-02-29 | 2009-09-17 | Panasonic Electric Works Co Ltd | 赤外線検出システム |
| US7902625B2 (en) | 2008-04-21 | 2011-03-08 | International Business Machines Corporation | Metal-gate thermocouple |
-
2010
- 2010-03-30 US US12/750,408 patent/US8304851B2/en active Active
- 2010-12-23 JP JP2013502561A patent/JP6038771B2/ja active Active
- 2010-12-23 CN CN201710055694.2A patent/CN107068635B/zh active Active
- 2010-12-23 WO PCT/US2010/062055 patent/WO2011126530A1/en not_active Ceased
- 2010-12-23 CN CN2010800659377A patent/CN102823005A/zh active Pending
-
2012
- 2012-10-18 US US13/654,591 patent/US8802476B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013524506A5 (https=) | ||
| Sevilla et al. | Flexible and semi-transparent thermoelectric energy harvesters from low cost bulk silicon (100) | |
| CN102136460B (zh) | 使用热分布结构在半导体装置中的热匹配 | |
| US8466054B2 (en) | Thermal conduction paths for semiconductor structures | |
| CN103035834B (zh) | 热电装置及制造法、能量收集系统、传热装置和热敏元件 | |
| JP6038771B2 (ja) | 半導体熱電対及びセンサ | |
| JP5677710B2 (ja) | 導電性材料製又は半導体材料製のナノワイヤを用いたセーベック／ペルティエ効果を利用した双方向性の熱電気変換装置 | |
| JP2015233154A (ja) | 積層サーモパイル | |
| JP2013511142A5 (https=) | ||
| TW201227905A (en) | Semiconductor device | |
| US9190596B2 (en) | Three-dimensional thermoelectric energy harvester and fabrication method thereof | |
| WO2013006701A1 (en) | Graphene-based thermopile | |
| US20140021576A1 (en) | Miniature thermoelectric energy harvester and fabrication method thereof | |
| JP2008070353A (ja) | 温度センサおよびその製造方法 | |
| CN107063470A (zh) | 具有高吸收效率和信噪比的悬置测辐射热膜的检测装置 | |
| JP2010278040A5 (ja) | 半導体装置の製造方法 | |
| TWI585914B (zh) | 用於熱取出及熱屏蔽的裝置及方法 | |
| CN102263197B (zh) | 新型微型热电发生器及其制造方法 | |
| US20140015089A1 (en) | Differential temperature sensor and its capacitors in cmos/bicmos technology | |
| CN102208523A (zh) | 热电器件及其形成方法、感温传感器和热源图像传感器 | |
| CN112670397A (zh) | 一种热电堆红外探测器及其制作方法 | |
| JP2008135675A5 (https=) | ||
| Yang et al. | Development of thermoelectric energy generator with high area density stacked polysilicon thermocouples | |
| KR101331996B1 (ko) | 써모파일 센서 및 그 제조방법 | |
| US20250113735A1 (en) | Infrared imaging microbolometer |