JP2013508953A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013508953A5 JP2013508953A5 JP2012534441A JP2012534441A JP2013508953A5 JP 2013508953 A5 JP2013508953 A5 JP 2013508953A5 JP 2012534441 A JP2012534441 A JP 2012534441A JP 2012534441 A JP2012534441 A JP 2012534441A JP 2013508953 A5 JP2013508953 A5 JP 2013508953A5
- Authority
- JP
- Japan
- Prior art keywords
- implantation
- mask
- region
- implanted
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25274409P | 2009-10-19 | 2009-10-19 | |
| US61/252,744 | 2009-10-19 | ||
| US12/906,369 US8173527B2 (en) | 2009-10-19 | 2010-10-18 | Stepped masking for patterned implantation |
| US12/906,369 | 2010-10-18 | ||
| PCT/US2010/053204 WO2011049950A1 (en) | 2009-10-19 | 2010-10-19 | Stepped masking for patterned implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013508953A JP2013508953A (ja) | 2013-03-07 |
| JP2013508953A5 true JP2013508953A5 (enExample) | 2013-11-07 |
Family
ID=43413803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012534441A Ceased JP2013508953A (ja) | 2009-10-19 | 2010-10-19 | パターン注入用段階的マスキング |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8173527B2 (enExample) |
| EP (1) | EP2491578B1 (enExample) |
| JP (1) | JP2013508953A (enExample) |
| KR (1) | KR20120091218A (enExample) |
| CN (1) | CN102687245A (enExample) |
| TW (1) | TW201120946A (enExample) |
| WO (1) | WO2011049950A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8101927B2 (en) * | 2009-06-08 | 2012-01-24 | Varian Semiconductor Equipment Associates, Inc. | Masking apparatus for an ion implanter |
| US20110027463A1 (en) * | 2009-06-16 | 2011-02-03 | Varian Semiconductor Equipment Associates, Inc. | Workpiece handling system |
| US8008176B2 (en) * | 2009-08-11 | 2011-08-30 | Varian Semiconductor Equipment Associates, Inc. | Masked ion implant with fast-slow scan |
| US8173527B2 (en) * | 2009-10-19 | 2012-05-08 | Varian Semiconductor Equipment Associates, Inc. | Stepped masking for patterned implantation |
| US8461030B2 (en) | 2009-11-17 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for controllably implanting workpieces |
| US9023722B2 (en) * | 2011-05-13 | 2015-05-05 | Varian Semiconductor Equipment Associates, Inc. | Compound semiconductor growth using ion implantation |
| US8658458B2 (en) * | 2011-06-15 | 2014-02-25 | Varian Semiconductor Equipment Associates, Inc. | Patterned doping for polysilicon emitter solar cells |
| US9190548B2 (en) * | 2011-10-11 | 2015-11-17 | Varian Semiconductor Equipment Associates, Inc. | Method of creating two dimensional doping patterns in solar cells |
| KR102132738B1 (ko) * | 2013-11-08 | 2020-07-10 | 엘지전자 주식회사 | 마스크 조립체 및 이를 이용한 태양 전지의 제조 방법 |
| TWI517430B (zh) | 2013-12-31 | 2016-01-11 | 東旭能興業有限公司 | 太陽能電池單元及其製造方法 |
| CN104538307B (zh) * | 2014-12-19 | 2018-07-06 | 深圳市华星光电技术有限公司 | 一种用于制作多晶硅薄膜晶体管的方法 |
| WO2018075238A1 (en) * | 2016-10-21 | 2018-04-26 | Sunpower Corporation | Solar cell emitter region fabrication apparatus |
| US10157980B1 (en) * | 2017-10-25 | 2018-12-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device having diode devices with different barrier heights and manufacturing method thereof |
| US11462386B2 (en) | 2018-12-17 | 2022-10-04 | Applied Materials, Inc. | Electron beam apparatus for optical device fabrication |
| US11193198B2 (en) | 2018-12-17 | 2021-12-07 | Applied Materials, Inc. | Methods of forming devices on a substrate |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4968660A (enExample) * | 1972-11-04 | 1974-07-03 | ||
| JPS4979457A (enExample) * | 1972-12-04 | 1974-07-31 | ||
| JPS63136618A (ja) * | 1986-11-28 | 1988-06-08 | Sony Corp | エネルギ−照射方法 |
| JP2837743B2 (ja) * | 1990-06-27 | 1998-12-16 | 富士通株式会社 | 荷電粒子ビーム露光方法およびそれに用いるステンシルマスク |
| JPH08213339A (ja) * | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
| JP4363694B2 (ja) | 1998-04-17 | 2009-11-11 | 株式会社東芝 | イオン注入装置および半導体装置の製造方法 |
| US6335534B1 (en) * | 1998-04-17 | 2002-01-01 | Kabushiki Kaisha Toshiba | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes |
| JP2004349508A (ja) * | 2003-05-22 | 2004-12-09 | Applied Materials Inc | 基体処理方法、マスク部材セット、基体処理装置、素子又は半導体装置の製造方法、及び、素子又は半導体装置の製造条件決定方法 |
| JP4112472B2 (ja) * | 2003-10-21 | 2008-07-02 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置の製造装置 |
| US7394073B2 (en) | 2005-04-05 | 2008-07-01 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for ion beam angle measurement in two dimensions |
| US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| US8008176B2 (en) * | 2009-08-11 | 2011-08-30 | Varian Semiconductor Equipment Associates, Inc. | Masked ion implant with fast-slow scan |
| US8173527B2 (en) * | 2009-10-19 | 2012-05-08 | Varian Semiconductor Equipment Associates, Inc. | Stepped masking for patterned implantation |
-
2010
- 2010-10-18 US US12/906,369 patent/US8173527B2/en not_active Expired - Fee Related
- 2010-10-19 JP JP2012534441A patent/JP2013508953A/ja not_active Ceased
- 2010-10-19 TW TW099135600A patent/TW201120946A/zh unknown
- 2010-10-19 CN CN2010800466020A patent/CN102687245A/zh active Pending
- 2010-10-19 WO PCT/US2010/053204 patent/WO2011049950A1/en not_active Ceased
- 2010-10-19 KR KR1020127012636A patent/KR20120091218A/ko not_active Withdrawn
- 2010-10-19 EP EP20100779091 patent/EP2491578B1/en not_active Not-in-force
-
2012
- 2012-04-09 US US13/442,571 patent/US8569157B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013508953A5 (enExample) | ||
| US8569157B2 (en) | Stepped masking for patterned implantation | |
| JP3851744B2 (ja) | 半導体装置の製造方法 | |
| KR100582783B1 (ko) | 이온주입방법 및 그 장치 | |
| JP2011513997A5 (ja) | 基板を使用して太陽電池を製造する方法 | |
| TWI555060B (zh) | 離子植入裝置及離子植入方法 | |
| CN107068527B (zh) | 离子注入装置 | |
| DE112015006631B4 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
| TWI570745B (zh) | 用於電漿離子植入之柵極 | |
| KR101919514B1 (ko) | 이면접합형 후방 접촉 솔라셀 및 기판을 프로세싱하기 위한 그 방법 | |
| JP2014532314A5 (enExample) | ||
| CN110729381B (zh) | 激光se结构图案制作方法、装置、设备及存储介质 | |
| CN106154680A (zh) | 一种硅基调制器及其制备方法 | |
| US9520515B2 (en) | Emitter structure based on silicon components to be used in a photovoltaic converter and a method for production of the photovoltaic device | |
| KR20130102575A (ko) | 작업물의 패턴화된 주입을 수행하기 위한 빔 블로커들 이용 | |
| CN100397578C (zh) | 离子植入设备及利用该设备植入离子的方法 | |
| US8765583B2 (en) | Angled multi-step masking for patterned implantation | |
| CN106165122B (zh) | 用来植入工件表面的掩模组以及处理工件的方法 | |
| JP2004103313A (ja) | イオンドーピング装置及びイオンドーピング装置用多孔電極 | |
| JP4543457B2 (ja) | イオン注入用遮蔽マスクと半導体装置の製造方法 | |
| CN102915916B (zh) | 半导体装置以及形成半导体装置的方法 | |
| JP4580886B2 (ja) | 半導体装置の製造方法 | |
| JP4146645B2 (ja) | pn接合ダイオードの製造方法及びpn接合ダイオード | |
| TWI434330B (zh) | 晶圓佈植的方法 | |
| TWI521599B (zh) | 半導體裝置以及形成半導體裝置的方法 |