JP2013508953A - パターン注入用段階的マスキング - Google Patents
パターン注入用段階的マスキング Download PDFInfo
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- JP2013508953A JP2013508953A JP2012534441A JP2012534441A JP2013508953A JP 2013508953 A JP2013508953 A JP 2013508953A JP 2012534441 A JP2012534441 A JP 2012534441A JP 2012534441 A JP2012534441 A JP 2012534441A JP 2013508953 A JP2013508953 A JP 2013508953A
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- 238000002347 injection Methods 0.000 title description 18
- 239000007924 injection Substances 0.000 title description 18
- 230000000873 masking effect Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 238000002513 implantation Methods 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000007943 implant Substances 0.000 claims description 30
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000010884 ion-beam technique Methods 0.000 abstract description 21
- 230000008569 process Effects 0.000 abstract description 8
- 210000004027 cell Anatomy 0.000 description 27
- 238000010586 diagram Methods 0.000 description 13
- 238000005468 ion implantation Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 210000004692 intercellular junction Anatomy 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Prostheses (AREA)
Abstract
Description
Claims (12)
- 基板にパターンを注入する方法であって、
少なくとも1つのアパーチュアを有するマスクを、前記基板とイオン源との間に、配置するステップと、
前記基板を前記イオン源にさらすステップであって、それにより、前記アパーチュアと位置合わせした前記基板の第1の領域にイオンを注入する、ステップと、
前記基板の第2の領域に前記アパーチュアを位置合わせするように、前記基板に対し第1の方向に前記マスクを動かすステップと、
前記基板を前記イオン源にさらすステップであって、それにより、前記基板の前記第2の領域にイオンを注入し、それにより、前記第1の領域の一部と前記第2の領域の一部とが重複し、高濃度注入領域を生成する、ステップと、
を有する方法。 - 前記アパーチュアは水平方向の長方形を備え、
複数の注入量の異なる水平ストライプを生成するように、前記基板に対し垂直方向に前記マスクが動かされる、請求項1に記載の方法。 - 前記アパーチュアは前記基板の幅より小さい幅を備え、
注入された水平ストライプを生成するように、前記基板に対し水平方向に前記マスクが動かされる、請求項1に記載の方法。 - 前記基板が前記イオン源にさらされない場合に、前記基板に対し前記マスクが動かされる、請求項1に記載の方法。
- 所望のパターンが前記基板に注入されるまで、前記マスクを動かすステップと、前記基板をさらすステップとを繰返すステップをさらに有する、請求項1に記載の方法。
- 前記マスクは、隣接する一対のアパーチュア間の間隔を有する、複数の水平方向に配置したアパーチュアを備え、
前記マスクは、隣接する一対のアパーチュア間の前記間隔に等しい距離だけ、前記基板に対し動かされる、請求項3に記載の方法。 - 前記マスクは、隣接する一対のアパーチュア間の間隔を有する、複数の水平方向に配置したアパーチュアを備え、
前記マスクは、隣接する一対のアパーチュア間の前記間隔より小さい距離だけ、前記基板に対し動かされる、請求項3に記載の方法。 - 前記マスクは、2つの行の水平方向に配置したアパーチュアを備え、
第1の行の前記アパーチュアは、第1の幅を有し、第1の間隔によって互いに分離され、
第2の行の前記アパーチュアは、前記第1の幅と異なる第2の幅を有し、第2の間隔によって互いに分離され、
注入量の異なるイオンを有する行を生成するように、前記基板に対し水平方向に前記マスクが動かされる、請求項1に記載の方法。 - 前記第2の幅に等しい距離だけ、前記マスクが動かされる、請求項8に記載の方法。
- 前記アパーチュアは、長方形の頂部又は底部の内の少なくとも1つから延びるインデントを備え、
高濃度注入領域を有する格子を生成するように、前記基板に対し垂直方向に前記マスクが動かされる、請求項3に記載の方法。 - 前記アパーチュアは、長方形の頂部又は底部の内の少なくとも1つから延びるインデントを備え、
少なくとも1つの垂直ストライプにより接続された水平ストライプを有するパターンを生成するように、前記基板に対し垂直方向に前記マスクが動かされる、請求項3に記載の方法。 - 前記基板の第3の領域に前記アパーチュアを位置合わせするように、前記基板に対し第2の方向に前記マスクを動かすステップと、
前記基板を前記イオン源にさらすステップであって、それにより、前記基板の前記第3の領域にイオンを注入し、それにより、前記第1の領域の一部と前記第2の領域の一部と前記第3の領域の一部とが重複し、高濃度注入領域を生成する、ステップと、
をさらに有する、請求項1に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25274409P | 2009-10-19 | 2009-10-19 | |
US61/252,744 | 2009-10-19 | ||
US12/906,369 | 2010-10-18 | ||
US12/906,369 US8173527B2 (en) | 2009-10-19 | 2010-10-18 | Stepped masking for patterned implantation |
PCT/US2010/053204 WO2011049950A1 (en) | 2009-10-19 | 2010-10-19 | Stepped masking for patterned implantation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013508953A true JP2013508953A (ja) | 2013-03-07 |
JP2013508953A5 JP2013508953A5 (ja) | 2013-11-07 |
Family
ID=43413803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012534441A Ceased JP2013508953A (ja) | 2009-10-19 | 2010-10-19 | パターン注入用段階的マスキング |
Country Status (7)
Country | Link |
---|---|
US (2) | US8173527B2 (ja) |
EP (1) | EP2491578B1 (ja) |
JP (1) | JP2013508953A (ja) |
KR (1) | KR20120091218A (ja) |
CN (1) | CN102687245A (ja) |
TW (1) | TW201120946A (ja) |
WO (1) | WO2011049950A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8101927B2 (en) * | 2009-06-08 | 2012-01-24 | Varian Semiconductor Equipment Associates, Inc. | Masking apparatus for an ion implanter |
US20110027463A1 (en) * | 2009-06-16 | 2011-02-03 | Varian Semiconductor Equipment Associates, Inc. | Workpiece handling system |
US8008176B2 (en) * | 2009-08-11 | 2011-08-30 | Varian Semiconductor Equipment Associates, Inc. | Masked ion implant with fast-slow scan |
US8173527B2 (en) * | 2009-10-19 | 2012-05-08 | Varian Semiconductor Equipment Associates, Inc. | Stepped masking for patterned implantation |
US8461030B2 (en) | 2009-11-17 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for controllably implanting workpieces |
US9023722B2 (en) * | 2011-05-13 | 2015-05-05 | Varian Semiconductor Equipment Associates, Inc. | Compound semiconductor growth using ion implantation |
US8658458B2 (en) * | 2011-06-15 | 2014-02-25 | Varian Semiconductor Equipment Associates, Inc. | Patterned doping for polysilicon emitter solar cells |
US9190548B2 (en) * | 2011-10-11 | 2015-11-17 | Varian Semiconductor Equipment Associates, Inc. | Method of creating two dimensional doping patterns in solar cells |
KR102132738B1 (ko) * | 2013-11-08 | 2020-07-10 | 엘지전자 주식회사 | 마스크 조립체 및 이를 이용한 태양 전지의 제조 방법 |
TWI517430B (zh) | 2013-12-31 | 2016-01-11 | 東旭能興業有限公司 | 太陽能電池單元及其製造方法 |
CN104538307B (zh) * | 2014-12-19 | 2018-07-06 | 深圳市华星光电技术有限公司 | 一种用于制作多晶硅薄膜晶体管的方法 |
WO2018075238A1 (en) * | 2016-10-21 | 2018-04-26 | Sunpower Corporation | Solar cell emitter region fabrication apparatus |
US10157980B1 (en) * | 2017-10-25 | 2018-12-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device having diode devices with different barrier heights and manufacturing method thereof |
WO2020131839A1 (en) | 2018-12-17 | 2020-06-25 | Applied Materials, Inc. | Method of optical device fabrication using an ion beam source |
WO2020131431A1 (en) * | 2018-12-17 | 2020-06-25 | Applied Materials, Inc. | A method of forming devices on a substrate |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4968660A (ja) * | 1972-11-04 | 1974-07-03 | ||
JPS4979457A (ja) * | 1972-12-04 | 1974-07-31 | ||
JPS63136618A (ja) * | 1986-11-28 | 1988-06-08 | Sony Corp | エネルギ−照射方法 |
US5288567A (en) * | 1990-06-27 | 1994-02-22 | Fujitsu Limited | Stencil mask and charged particle beam exposure method and apparatus using the stencil mask |
JPH08213339A (ja) * | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
JP2000003881A (ja) * | 1998-04-17 | 2000-01-07 | Toshiba Corp | イオン注入装置、イオン発生装置および半導体装置の製造方法 |
JP2004349508A (ja) * | 2003-05-22 | 2004-12-09 | Applied Materials Inc | 基体処理方法、マスク部材セット、基体処理装置、素子又は半導体装置の製造方法、及び、素子又は半導体装置の製造条件決定方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335534B1 (en) * | 1998-04-17 | 2002-01-01 | Kabushiki Kaisha Toshiba | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes |
JP4112472B2 (ja) * | 2003-10-21 | 2008-07-02 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置の製造装置 |
US7394073B2 (en) | 2005-04-05 | 2008-07-01 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for ion beam angle measurement in two dimensions |
US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US8008176B2 (en) * | 2009-08-11 | 2011-08-30 | Varian Semiconductor Equipment Associates, Inc. | Masked ion implant with fast-slow scan |
US8173527B2 (en) * | 2009-10-19 | 2012-05-08 | Varian Semiconductor Equipment Associates, Inc. | Stepped masking for patterned implantation |
-
2010
- 2010-10-18 US US12/906,369 patent/US8173527B2/en not_active Expired - Fee Related
- 2010-10-19 CN CN2010800466020A patent/CN102687245A/zh active Pending
- 2010-10-19 KR KR1020127012636A patent/KR20120091218A/ko not_active Application Discontinuation
- 2010-10-19 TW TW099135600A patent/TW201120946A/zh unknown
- 2010-10-19 WO PCT/US2010/053204 patent/WO2011049950A1/en active Application Filing
- 2010-10-19 EP EP20100779091 patent/EP2491578B1/en not_active Not-in-force
- 2010-10-19 JP JP2012534441A patent/JP2013508953A/ja not_active Ceased
-
2012
- 2012-04-09 US US13/442,571 patent/US8569157B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4968660A (ja) * | 1972-11-04 | 1974-07-03 | ||
JPS4979457A (ja) * | 1972-12-04 | 1974-07-31 | ||
JPS63136618A (ja) * | 1986-11-28 | 1988-06-08 | Sony Corp | エネルギ−照射方法 |
US5288567A (en) * | 1990-06-27 | 1994-02-22 | Fujitsu Limited | Stencil mask and charged particle beam exposure method and apparatus using the stencil mask |
JPH08213339A (ja) * | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
JP2000003881A (ja) * | 1998-04-17 | 2000-01-07 | Toshiba Corp | イオン注入装置、イオン発生装置および半導体装置の製造方法 |
JP2004349508A (ja) * | 2003-05-22 | 2004-12-09 | Applied Materials Inc | 基体処理方法、マスク部材セット、基体処理装置、素子又は半導体装置の製造方法、及び、素子又は半導体装置の製造条件決定方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110256698A1 (en) | 2011-10-20 |
CN102687245A (zh) | 2012-09-19 |
KR20120091218A (ko) | 2012-08-17 |
WO2011049950A1 (en) | 2011-04-28 |
TW201120946A (en) | 2011-06-16 |
EP2491578B1 (en) | 2015-04-22 |
EP2491578A1 (en) | 2012-08-29 |
US20120196430A1 (en) | 2012-08-02 |
US8173527B2 (en) | 2012-05-08 |
US8569157B2 (en) | 2013-10-29 |
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