JP2013506300A5 - - Google Patents
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- Publication number
- JP2013506300A5 JP2013506300A5 JP2012531072A JP2012531072A JP2013506300A5 JP 2013506300 A5 JP2013506300 A5 JP 2013506300A5 JP 2012531072 A JP2012531072 A JP 2012531072A JP 2012531072 A JP2012531072 A JP 2012531072A JP 2013506300 A5 JP2013506300 A5 JP 2013506300A5
- Authority
- JP
- Japan
- Prior art keywords
- gas injector
- tubular straw
- lumen
- tubular
- connector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010902 straw Substances 0.000 claims 15
- 239000000463 material Substances 0.000 claims 7
- 239000012530 fluid Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910001220 stainless steel Inorganic materials 0.000 claims 2
- 239000010935 stainless steel Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000003796 beauty Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27736109P | 2009-09-25 | 2009-09-25 | |
| US61/277,361 | 2009-09-25 | ||
| PCT/US2010/050217 WO2011038242A2 (en) | 2009-09-25 | 2010-09-24 | Hybrid gas injector |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013506300A JP2013506300A (ja) | 2013-02-21 |
| JP2013506300A5 true JP2013506300A5 (enExample) | 2013-11-14 |
| JP5802672B2 JP5802672B2 (ja) | 2015-10-28 |
Family
ID=43796508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012531072A Active JP5802672B2 (ja) | 2009-09-25 | 2010-09-24 | ハイブリッドガスインジェクタ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20110232568A1 (enExample) |
| EP (1) | EP2481082B1 (enExample) |
| JP (1) | JP5802672B2 (enExample) |
| KR (1) | KR20120085745A (enExample) |
| CN (1) | CN102656666B (enExample) |
| WO (1) | WO2011038242A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150013139A (ko) * | 2012-04-27 | 2015-02-04 | 알케마 인코포레이티드 | 금속-산화물 증기 코팅 유리 용기를 위한 후드 |
| JP6176732B2 (ja) * | 2014-03-20 | 2017-08-09 | 株式会社日立国際電気 | ガス供給部、基板処理装置及び半導体装置の製造方法 |
| US20170167023A1 (en) * | 2015-12-09 | 2017-06-15 | Lam Research Corporation | Silicon or silicon carbide gas injector for substrate processing systems |
| AT518081B1 (de) * | 2015-12-22 | 2017-07-15 | Sico Tech Gmbh | Injektor aus Silizium für die Halbleiterindustrie |
| US11993847B2 (en) * | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR20230026148A (ko) * | 2021-08-17 | 2023-02-24 | 삼성전자주식회사 | 기판 처리 장치 및 이를 이용한 반도체 소자 제조 방법 |
| CN115386861B (zh) * | 2022-10-27 | 2023-04-07 | 盛吉盛(宁波)半导体科技有限公司 | 一种化学气相沉积设备的导气管及其制备方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3761114A (en) * | 1971-08-30 | 1973-09-25 | Victaulic Co Ltd | Pipe to flange couplings |
| US3942141A (en) * | 1972-05-26 | 1976-03-02 | Licentia Patent-Verwaltungs-G.M.B.H. | Flange |
| FR2490246A1 (fr) * | 1980-09-17 | 1982-03-19 | Cit Alcatel | Dispositif de deposition chimique activee sous plasma |
| US4448448A (en) * | 1982-03-22 | 1984-05-15 | Raphael Theresa Pollia | Coupling system |
| JPH0719143Y2 (ja) * | 1990-04-26 | 1995-05-01 | 日本エー・エス・エム株式会社 | ガス導入装置を有するcvd装置 |
| US5318633A (en) * | 1991-03-07 | 1994-06-07 | Tokyo Electron Sagami Limited | Heat treating apparatus |
| JPH04280420A (ja) * | 1991-03-07 | 1992-10-06 | Toshiba Corp | 熱処理装置 |
| JPH05243161A (ja) * | 1992-01-29 | 1993-09-21 | Nec Corp | 気相成長装置及びエピタキシャル膜の成長方法 |
| US5441570A (en) * | 1993-06-22 | 1995-08-15 | Jein Technics Co., Ltd. | Apparatus for low pressure chemical vapor deposition |
| US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| JPH09260298A (ja) * | 1996-03-18 | 1997-10-03 | Kokusai Electric Co Ltd | 半導体製造装置の反応ガス導入ノズル支持構造 |
| JPH10284426A (ja) * | 1997-04-10 | 1998-10-23 | Kokusai Electric Co Ltd | ノズル |
| JP2001230212A (ja) * | 2000-02-16 | 2001-08-24 | Tokyo Electron Ltd | 縦型熱処理装置 |
| JP2001267255A (ja) * | 2000-03-21 | 2001-09-28 | Nec Corp | 気相成長装置及び気相成長方法 |
| JP2001351871A (ja) * | 2000-06-09 | 2001-12-21 | Asm Japan Kk | 半導体製造装置 |
| US6455395B1 (en) * | 2000-06-30 | 2002-09-24 | Integrated Materials, Inc. | Method of fabricating silicon structures including fixtures for supporting wafers |
| US6450346B1 (en) | 2000-06-30 | 2002-09-17 | Integrated Materials, Inc. | Silicon fixtures for supporting wafers during thermal processing |
| JP3572247B2 (ja) * | 2000-10-06 | 2004-09-29 | 東芝セラミックス株式会社 | 半導体熱処理炉用ガス導入管 |
| JP2002334868A (ja) * | 2001-05-10 | 2002-11-22 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| US20020170487A1 (en) * | 2001-05-18 | 2002-11-21 | Raanan Zehavi | Pre-coated silicon fixtures used in a high temperature process |
| US7083694B2 (en) * | 2003-04-23 | 2006-08-01 | Integrated Materials, Inc. | Adhesive of a silicon and silica composite particularly useful for joining silicon parts |
| US6830449B1 (en) * | 2004-02-02 | 2004-12-14 | Sis Microelectronics Corporation | Injector robot for replacing a gas injector in a furnace |
| JP2006080256A (ja) * | 2004-09-09 | 2006-03-23 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| WO2006030857A1 (ja) * | 2004-09-16 | 2006-03-23 | Hitachi Kokusai Electric Inc. | 熱処理装置及び基板の製造方法 |
| US20060185589A1 (en) * | 2005-02-23 | 2006-08-24 | Raanan Zehavi | Silicon gas injector and method of making |
| US7972703B2 (en) * | 2005-03-03 | 2011-07-05 | Ferrotec (Usa) Corporation | Baffle wafers and randomly oriented polycrystalline silicon used therefor |
| US7910494B2 (en) * | 2006-03-29 | 2011-03-22 | Tokyo Electron Limited | Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto |
| US8070880B2 (en) * | 2007-10-22 | 2011-12-06 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus |
| JP5237133B2 (ja) * | 2008-02-20 | 2013-07-17 | 株式会社日立国際電気 | 基板処理装置 |
-
2010
- 2010-09-24 EP EP10819542.1A patent/EP2481082B1/en active Active
- 2010-09-24 JP JP2012531072A patent/JP5802672B2/ja active Active
- 2010-09-24 WO PCT/US2010/050217 patent/WO2011038242A2/en not_active Ceased
- 2010-09-24 KR KR1020127006659A patent/KR20120085745A/ko not_active Withdrawn
- 2010-09-24 CN CN201080042558.6A patent/CN102656666B/zh active Active
- 2010-09-24 US US12/890,329 patent/US20110232568A1/en not_active Abandoned
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