JP2013502074A - 漏れインダクタンス制御を向上させた結合インダクタ - Google Patents
漏れインダクタンス制御を向上させた結合インダクタ Download PDFInfo
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- 238000004804 winding Methods 0.000 claims abstract description 147
- 230000004907 flux Effects 0.000 claims abstract description 20
- 230000027311 M phase Effects 0.000 claims abstract description 4
- 239000000696 magnetic material Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 230000035699 permeability Effects 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims 6
- 239000011162 core material Substances 0.000 description 41
- 230000008901 benefit Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
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- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000012256 powdered iron Substances 0.000 description 2
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- 229910000859 α-Fe Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F3/00—Cores, Yokes, or armatures
- H01F3/10—Composite arrangements of magnetic circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F30/00—Fixed transformers not covered by group H01F19/00
- H01F30/06—Fixed transformers not covered by group H01F19/00 characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F38/00—Adaptations of transformers or inductances for specific applications or functions
- H01F2038/006—Adaptations of transformers or inductances for specific applications or functions matrix transformer consisting of several interconnected individual transformers working as a whole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2847—Sheets; Strips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F3/00—Cores, Yokes, or armatures
- H01F3/10—Composite arrangements of magnetic circuits
- H01F3/14—Constrictions; Gaps, e.g. air-gaps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
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- Engineering & Computer Science (AREA)
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- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Coils Or Transformers For Communication (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
したがって、所望の漏れインダクタンスを維持するために、巻線の数が増加するにつれて、空隙808の厚さ810が増加される場合がある。
Claims (25)
- M−巻線結合インダクタであって、Mは、1より大きい整数であり、該結合インダクタは、
第1の端部磁気要素と、
第2の端部磁気要素と、
M個の接続磁気要素であって、各接続磁気要素は、該第1の端部磁気要素と該第2の端部磁気要素との間に配置され、それらを接続する、M個の接続磁気要素と、
M個の巻線であって、各巻線は、該M個の接続磁気要素のうちの個別の1つに少なくとも部分的に巻き付けられる、M個の巻線と、
磁束に該第1の端部磁気要素と該第2の端部磁気要素との間の経路を提供するように、該M個の接続磁気要素のうちの少なくとも2つに隣接し、それらに少なくとも部分的にわたって延在する、少なくとも1つの上部磁気要素と
を備える、結合インダクタ。 - 前記少なくとも1つの上部磁気要素は、第1の空隙によって前記第1の端部磁気要素から離間され、該少なくとも1つの上部磁気要素は、第2の空隙によって前記第2の端部磁気要素から離間され、該第1および第2の空隙のそれぞれは、前記磁気要素を形成する1つ以上の磁性材料より低い透磁率を有する個別の空隙材料を含む、請求項1に記載の結合インダクタ。
- 各巻線は、前記第1の空隙の厚さの関数であり、かつ前記第2の空隙の厚さの関数である、個別の漏れインダクタンス値を有する、請求項2に記載の結合インダクタ。
- 接着剤および非磁性スペーサから成る群より選択される非磁性材料をさらに備え、該非磁性材料は、前記少なくとも1つの上部磁気要素を前記第1および第2の端部磁気要素から分離する、請求項3に記載の結合インダクタ。
- 前記M個の巻線のうちの少なくとも1つは、前記少なくとも1つの上部磁気要素と前記第1および第2の端部磁気要素との間のスペーサとしての役割を果たす、請求項3に記載の結合インダクタ。
- 前記少なくとも1つの上部磁気要素は、空隙材料を含む空隙を形成し、前記空隙材料は、前記磁気要素を形成する1つ以上の磁性材料より低い透磁率を有する、請求項1に記載の結合インダクタ。
- 各巻線は、前記空隙の厚さの関数である、個別の漏れインダクタンス値を有する、請求項6に記載の結合インダクタ。
- Mは、2より大きい整数である、請求項7に記載の結合インダクタ。
- 前記第1および第2の端部磁気要素のうちの少なくとも1つは、前記少なくとも1つの上部磁気要素に隣接する開口部を形成する、請求項8に記載の結合インダクタ。
- 前記少なくとも1つの上部磁気要素は、第1および第2の上部磁気要素を備え、該第1および第2の上部磁気要素は、それらの間に空隙を形成する、請求項1に記載の結合インダクタ。
- 前記少なくとも1つの上部磁気要素は、単一の上部磁気要素を備える、請求項1に記載の結合インダクタ。
- 各巻線は、単層であり、長方形の断面を有する単巻の巻線である、請求項1に記載の結合インダクタ。
- 前記少なくとも1つの上部磁気要素は、外面を形成し、前記外面の少なくとも一部分は、平面である、請求項1に記載の結合インダクタ。
- 各接続磁気要素は、個別の幅を有し、隣接する接続磁気要素は、いずれかの隣接する接続磁気要素の前記個別の幅の25%未満である分離距離で分離される、請求項1に記載の結合インダクタ。
- 各接続磁気要素は、個別の幅を有し、隣接する接続磁気要素は、いずれかの隣接する接続磁気要素の前記個別の幅の10%未満である分離距離で分離される、請求項1に記載の結合インダクタ。
- 前記少なくとも1つの上部磁気要素は、前記M個の接続磁気要素の全てに隣接し、それらにわたって延在する、請求項1に記載の結合インダクタ。
- 前記少なくとも1つの上部磁気要素は、前記M個の接続磁気要素の全て未満に隣接し、それらにわたって延在する、請求項1に記載の結合インダクタ。
- 前記第1および第2の端部磁気要素のうちの少なくとも1つは、前記少なくとも1つの上部磁気要素に隣接する開口部を形成する、請求項17に記載の結合インダクタ。
- M相電源であって、Mは、1より大きい整数であり、該電源は、
結合インダクタであって、
第1の端部磁気要素と、
第2の端部磁気要素と、
M個の接続磁気要素であって、各接続磁気要素は、該第1の端部磁気要素と該第2の端部磁気要素との間に配置され、それらを接続する、M個の接続磁気要素と、
M個の巻線であって、各巻線は、該M個の接続磁気要素のうちの個別の1つに少なくとも部分的に巻き付けられ、各巻線は、個別の第1の端部と、個別の第2の端部とを有し、各第1の端部は、共通の第1の節点に電気的に結合される、M個の巻線と、
磁束に該第1の端部磁気要素と該第2の端部磁気要素との間の経路を提供するように、該M個の接続磁気要素のうちの少なくとも2つに隣接し、それらに少なくとも部分的にわたって延在する、少なくとも1つの上部磁気要素と
を含む、結合インダクタと、
M個のスイッチング回路であって、各スイッチング回路は、個別の巻線の該第2の端部に電気的に結合され、少なくとも2つの異なる電圧間で該第2の端部を切り替えるように構成される、M個のスイッチング回路と
を備える、M相電源。 - Mは、2より大きい整数である、請求項19に記載の電源。
- 前記少なくとも1つの上部磁気要素は、第1の空隙によって前記第1の端部磁気要素から分離され、該少なくとも1つの上部磁気要素は、第2の空隙によって前記第2の磁気要素から分離され、該第1および第2の空隙のそれぞれは、前記磁気要素を形成する1つ以上の磁性材料より低い透磁率を有する個別の空隙材料を含み、各巻線は、該第1の空隙の厚さの関数であり、かつ第2の空隙の厚さの関数である、個別の漏れインダクタンス値を有する、請求項19に記載の電源。
- 前記少なくとも1つの上部磁気要素は、前記磁気要素を形成する1つ以上の磁性材料より低い透磁率を有する空隙材料を含む空隙を形成し、各巻線は、前記空隙の厚さの関数である、個別の漏れインダクタンス値を有する、請求項19に記載の電源。
- 各接続磁気要素は、個別の幅を有し、隣接する接続磁気要素は、いずれかの隣接する接続磁気要素の該個別の幅の25%未満である分離距離で分離される、請求項19に記載の電源。
- 各スイッチング回路は、その個別の第2の端部を、少なくとも20キロヘルツの周波数で、少なくとも2つの異なる電圧間で切り替えるように構成される、請求項19に記載の電源。
- 前記電源は、降圧コンバータ、昇圧コンバータ、および降圧−昇圧コンバータから成る群より選択されるDC−DCコンバータとして動作するように構成される、請求項19に記載の電源。
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Application Number | Priority Date | Filing Date | Title |
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US12/538,707 | 2009-08-10 | ||
US12/538,707 US8102233B2 (en) | 2009-08-10 | 2009-08-10 | Coupled inductor with improved leakage inductance control |
US12/830,849 | 2010-07-06 | ||
US12/830,849 US8237530B2 (en) | 2009-08-10 | 2010-07-06 | Coupled inductor with improved leakage inductance control |
PCT/US2010/045013 WO2011019712A1 (en) | 2009-08-10 | 2010-08-10 | Coupled inductor with improved leakage inductance control |
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JP2013502074A true JP2013502074A (ja) | 2013-01-17 |
JP2013502074A5 JP2013502074A5 (ja) | 2013-08-29 |
JP5698236B2 JP5698236B2 (ja) | 2015-04-08 |
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US (1) | US8237530B2 (ja) |
JP (1) | JP5698236B2 (ja) |
CN (1) | CN102576593B (ja) |
TW (1) | TWI384509B (ja) |
WO (1) | WO2011019712A1 (ja) |
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US8237530B2 (en) | 2012-08-07 |
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