JP2013254610A - Organic el light emitting device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic EL light emitting device capable of reducing optical color mixing at low cost.SOLUTION: An organic EL light emitting device includes a substrate 60, a first electrode layer 30 disposed on the substrate, an organic EL layer 36 disposed on the first electrode layer, a second electrode layer 38 disposed on the organic EL layer, and color filters 40R, 40G and 40B of a plurality of colors disposed on the second electrode layer. A color mixing suppression means suppressing optical color mixing of rays emitted from the organic EL layer is provided at the boundary between each color filter.

Description

  The present invention relates to an organic EL light-emitting device and a method for manufacturing the same, and more particularly to an organic EL light-emitting device with improved moisture resistance life and durability and a method for manufacturing the same.

  In recent years, display devices and illumination devices using organic EL (EL) elements as organic light emitting elements have been developed for practical use. Further, an organic EL display device has attracted attention as a next-generation thin display.

  In the organic EL display device, an upper electrode is disposed on the organic EL layer, and a color filter is disposed on the upper electrode (see, for example, Patent Document 1).

  By the way, in an organic EL display, especially a micro display, there is a problem that optical color mixing (crosstalk) occurs and color purity is lowered.

  Conventionally, as a method for suppressing optical color mixing, for example, a technique is known in which a grid-like black matrix is provided on a transparent substrate to reduce color mixing between color filters (see, for example, Patent Document 2).

JP 2009-288435 A JP 2010-272214 A

  However, when the black matrix is provided as in the above prior art, there is a problem that the manufacturing process increases and the cost increases.

  In addition, the presence of the black matrix has a disadvantage that the light emitting area is reduced and the luminance of the organic EL display is lowered.

  An object of the present invention is to provide an organic EL light emitting device capable of reducing optical color mixing at low cost and a method for manufacturing the same.

  According to one aspect of the present invention for achieving the above object, a substrate, a first electrode layer disposed on the substrate, an organic EL layer disposed on the first electrode layer, and the organic EL A second electrode layer disposed on the layer and a plurality of color filters disposed on the second electrode layer, and emitted from the organic EL layer at a boundary between the color filters. There is provided an organic EL light emitting device provided with a color mixing suppressing means for suppressing optical color mixing of light rays.

  According to another aspect of the present invention, the substrate, the first electrode layer disposed on the substrate, the organic EL layer disposed on the first electrode layer, and the organic EL layer are disposed. A second electrode layer; and a plurality of color filters disposed on the second electrode layer, wherein the organic EL layer is emitted from at least one of the first electrode layer and the second electrode layer. There is provided an organic EL light emitting device provided with a color mixing suppressing means for suppressing optical color mixing of light rays.

  According to another aspect of the present invention, a step of preparing a substrate, a step of forming a first electrode layer on the substrate, a step of forming an organic EL layer on the first electrode layer, and the organic EL A step of forming a second electrode layer on the layer, a step of forming a plurality of color filters on the second electrode layer, a step of applying a resist with a predetermined width to the boundary of each color filter, and the resist And a step of ashing the surface of the coated color filter to form a raised portion at the boundary.

  ADVANTAGE OF THE INVENTION According to this invention, the organic electroluminescent light-emitting device which can reduce optical color mixing at low cost, and its manufacturing method can be provided.

The typical cross-section figure of 1 pixel part of the organic electroluminescent light emitting device which concerns on a basic structure. The typical bird's-eye view of 1 pixel part of the organic electroluminescent light emitting device which concerns on a basic structure. The cross-sectional SEM photograph of the organic electroluminescent light emitting device which concerns on a basic structure. The figure which shows an example of typical block structure including the peripheral circuit of the organic electroluminescent light emitting device which concerns on a basic structure. As a comparative example, a schematic cross-sectional structure diagram of one pixel portion of an organic EL light emitting device showing a state of occurrence of optical color mixing. FIG. 3 is a schematic cross-sectional structure diagram of one pixel portion of the first example of the organic EL light emitting device according to the first embodiment. The typical cross-section figure of 1 pixel part of 2nd Example of the organic electroluminescent light-emitting device which concerns on 1st Embodiment. The typical cross-section figure of 1 pixel part of the 3rd Example of the organic electroluminescent light emitting device which concerns on 1st Embodiment. The typical cross-section figure of 1 pixel part of 4th Example of the organic electroluminescent light-emitting device which concerns on 1st Embodiment. The typical cross-section figure of 1 pixel part of the 5th Example of the organic electroluminescent light-emitting device which concerns on 1st Embodiment. The typical cross-section figure of 1 pixel part of the 6th Example of the organic electroluminescent light emitting device which concerns on 1st Embodiment. The typical cross-section figure of 1 pixel part of the 7th Example of the organic electroluminescent light-emitting device which concerns on 1st Embodiment. The typical cross-section figure of 1 pixel part of the 8th Example of the organic electroluminescent light-emitting device which concerns on 1st Embodiment. The typical cross-section figure of 1 pixel part of the 9th Example of the organic electroluminescent light emitting device which concerns on 1st Embodiment. The typical cross-section figure of 1 pixel part of the 10th Example of the organic electroluminescent light-emitting device which concerns on 1st Embodiment. FIG. 3 is a schematic plan configuration diagram of a laminated color filter that is applicable to the organic EL light emitting device according to the first embodiment and has a Δ array pattern example based on a hexagon. The bird's-eye view surface SEM photograph example of the organic electroluminescent light emitting device which concerns on 1st Embodiment. 4 is a cross-sectional SEM photograph example showing a raised state of an edge portion of a color filter in the organic EL light emitting device according to the first embodiment. FIG. 3 is a schematic cross-sectional explanatory diagram illustrating a rising state of an edge portion of a color filter in the organic EL light emitting device according to the first embodiment. In the organic EL light-emitting device which concerns on 1st Embodiment, it is a figure explaining the rising state of the edge part of a color filter, Comprising: (a) The top view which shows the color filter of a several rectangular pattern, (b) FIG. Typical sectional drawing which follows the II line of 20 (b). Explanatory drawing which shows the procedure of the method of forming a swelling part in the peripheral part of a color filter in the organic electroluminescent light-emitting device which concerns on 1st Embodiment. Explanatory drawing which shows the state which ashes the surface of a color filter in the organic electroluminescent light-emitting device which concerns on 1st Embodiment. The organic EL light-emitting device which concerns on 1st Embodiment WHEREIN: The typical cross-section figure of 1 pixel part of the organic EL light-emitting device which concerns on another Example. 1 is a schematic cross-sectional structure diagram of an organic EL light emitting device according to a first embodiment equipped with a laminated color filter. The typical cross-section figure of the organic electroluminescent light-emitting device for demonstrating generation | occurrence | production of color mixing as a comparative example. The typical cross-section figure of the 1st Example of the organic electroluminescent light-emitting device which concerns on 2nd Embodiment. In the organic electroluminescent light emitting device which concerns on 2nd Embodiment, it is a figure which shows the example of the taper structure of a 1st electrode layer, (a) is sectional drawing in the case of having a linear inclination part, (b) is a curve Sectional drawing in the case of having a sloped portion. The typical cross-section figure of the 2nd Example of the organic electroluminescent light-emitting device which concerns on 2nd Embodiment. (A) The typical cross-section figure which shows the other structure of the 2nd Example of the organic electroluminescent light-emitting device which concerns on 2nd Embodiment, (b) The typical cross-section figure of a comparative example. The typical cross-section figure of the 3rd Example of the organic electroluminescent light-emitting device which concerns on 2nd Embodiment. The organic EL light-emitting device which concerns on the 1st-2nd embodiment WHEREIN: The top view which shows the arrangement | sequence of the 1st electrode which uses a regular hexagon as a basic pattern. FIG. 32A is a schematic cross-sectional structure diagram taken along line II-II in FIG. 31; FIG. 33B is a schematic cross-sectional structure diagram taken along line III-III in FIG. 2 is a cross-sectional SEM photograph example of the organic EL light emitting device according to the first embodiment on which a multilayer color filter is mounted. FIG. 34 is an enlarged cross-sectional SEM photograph of the laminated color filter portion of FIG. FIG. 35 is a detailed explanatory diagram of the laminated color filter portion of FIG.

  Next, embodiments will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the embodiments of the present invention include the material, shape, structure, The layout is not specified as follows. Various modifications can be made to the embodiment of the present invention within the scope of the claims.

  In the organic EL light emitting devices according to the following embodiments, “transparent” is defined as having a transmittance of about 50% or more. In addition, “transparent” is also used to mean colorless and transparent with respect to visible light in the organic EL light emitting device according to the embodiment. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.

[Basic structure of organic EL light emitting device]
As shown in FIG. 1, a schematic cross-sectional structure of one pixel portion of the organic EL light emitting device according to the basic structure includes a drive circuit 34R / 34G / 34B and a VIA disposed on each drive circuit 34R / 34G / 34B. An electrode 70, a lower electrode 30 disposed on each VIA electrode 70, an organic EL layer 36 disposed as a common region on the lower electrode 30, an upper electrode 38 disposed on the organic EL layer 36, and an upper portion Color filters 40R, 40G, and 40B disposed on the electrode 38 are provided.

  The drive circuits 34R, 34G, and 34B indicate the drive circuits 34 for red, green, and blue, respectively.

  Similarly, the color filters 40R, 40G, and 40B indicate the color filters 40 for red, green, and blue, respectively.

  The drive circuits 34R, 34G, and 34B, and the VIA electrodes 70 disposed on the drive circuits 34R, 34G, and 34B, respectively, are more specifically shown in FIG. 2 as complementary types disposed on the semiconductor substrate 58. (C: Complementary) MOS LSI 600 is configured. The gate electrode 56 of the CMOSFET, and the M1 electrode 52 and the M2 electrode 54 forming the electrode wiring layer are connected via the interlayer insulating film and the VIA electrode, but details are omitted in FIG.

  As shown in FIG. 2, the organic EL layer 36 is sandwiched between the lower electrode 30 and the upper electrode 38, and is disposed on the hole transport layer 50 and the hole transport layer 50 disposed on the lower electrode 30. A light emitting layer 48 and an electron transport layer 46 disposed on the light emitting layer 48.

  Furthermore, as shown in FIG. 2, the organic EL light emitting device according to the basic configuration includes an upper electrode 38 disposed on the electron transport layer 46, a seal layer 44 disposed on the upper electrode 38, and a seal layer 44. And a transparent protective film 42 disposed on the color filter 40.

  1 and 2 correspond to one pixel 6, and the organic EL light emitting device has such a structure of the pixel 6 arranged in a matrix, for example.

  1 and 2, the upper electrode 38 is formed as a common electrode and the lower electrode 30 is formed as a divided electrode. Conversely, the upper electrode 38 is formed as a divided electrode, and the lower electrode 30 is formed. May be configured as a common electrode. In this case, each VIA electrode 70 is connected to an upper electrode 38 formed as a divided electrode. Furthermore, in the configuration of FIG. 1, the upper electrode 38 may also be formed as a divided electrode.

2 shows an example in which the hole transport layer 50 is disposed as a layer in contact with the lower electrode 30, and the electron transport layer 46 is disposed as a layer in contact with the upper electrode 38. However, the present invention is not limited to this. The electron transport layer 46 may be disposed as a layer in contact with the lower electrode 30, and the hole transport layer 50 may be disposed as a layer in contact with the upper electrode 38. However, in this case, the wiring from the CMOS LSI 600 is changed. Further, the above-described upper electrode 38 may be formed as a split electrode R and combined with a configuration in which the lower electrode 30 is a common electrode.

  An example of a cross-sectional SEM photograph of the organic EL light emitting device according to the basic configuration is shown in FIG.

  In the organic EL light emitting device according to the basic configuration, as shown in FIG. 3, an organic EL layer 36 is laminated on a CMOS LSI 600 via a lower electrode 30.

  2 shows a two-layer metal structure of the M1 electrode 52 and the M2 electrode 54, the present invention is not limited to this. A three-layer metal may be used as shown in FIG. An appropriate number of metal layers may be selected according to the wiring scale.

  FIG. 1 and FIG. 2 show the configuration of one pixel (pixel) arranged at the intersection of a plurality of data lines and a plurality of scanning lines, and a CMOS LSI 600 formed of a CMOSFET formed on a semiconductor substrate 58. Constitutes a logic circuit, and constitutes drive circuits 34R, 34G, and 34B in one pixel.

  In the organic EL light emitting device according to the basic configuration, the CMOS LSI 600 configures a horizontal scanning circuit, a vertical scanning circuit, a row driver, a column driver, a data latch circuit, a PNM driver, and the like for driving the pixel array.

  In the configuration shown in FIGS. 1 and 2, the formation of the M1 electrode 52 and the M2 electrode 54 through the CMOSFET region and the respective interlayer insulating films is the same as in the miniaturized silicon process.

  The electrodes such as the M1 electrode 52 and the M2 electrode 54 are connected to each other at a predetermined contact portion via a VIA electrode by, for example, a metal damascene structure.

  The transparent protective film 42 can be formed of, for example, a clear resist, glass, a transparent insulating film, or the like.

  In order to display a color image in the visible light region, the color filter 40 is disposed on the seal layer 44. The color filters are provided in one adjacent pixel for red, green, and blue, and constitute one pixel in three sets. The color filter can be formed by, for example, a multilayer film on glass or a multilayer of a dye / pigment-containing resist.

  The seal layer 44 protects and seals the upper electrode 38, the organic EL layer 36, and the organic EL lower electrode 30. As the material of the seal layer 44, a silicon oxide film, a silicon nitride film, an alumina film, or the like is used. Moreover, since the sealing layer 44 has a function of radiating heat to the outside, a material having high thermal conductivity is desirable.

  The upper electrode 38 can transmit light and can be formed of an inorganic conductor material such as ITO (indium-tin oxide) or IZO (indium-zinc oxide). The upper electrode 38 can also be formed of a thin layer of metal such as Al, Ag, or MgAg (for example, about 10 nm to about 20 nm).

The electron transport layer 46 is for smoothly transporting electrons injected from the upper electrode 38 to the light emitting layer 48, and is made of, for example, Alq ₃ (aluminum quinolinol complex) having a thickness of about 35 nm. Here, Alq ₃ is a material called aluminum 8-hydroxyquinolinate or tri-8-quinolinolato aluminum.

  Other electron transport materials for forming the electron transport layer 46 include t-butyl-PBD, TAZ, silole derivatives, boron-substituted triaryl compounds, phenylquinoxaline derivatives, and the like. Further, BCP, oxadiazole dimer, starburst oxadiazole, and the like are applicable.

The light emitting layer 48 is for recombination of injected holes and electrons to emit light, and has a thickness doped with, for example, about 1% of a coumarin compound (C ₅₄₅ T) as a light emitting species. Is made of, for example, about 30 nm of Alq ₃ . Further, as a dopant, a complex containing rubrene or a transition metal atom may be included.

For the light emitting layer 48, for example, a carrier transporting light emitting material, or a mixed layer of a light emitting dopant and a host material can be applied. Examples of the carrier transporting light emitting material include Alq, Almq, Mgq, BeBq ₂ , ZnPBO, ZnPBT, Be (5Fla) ₂ , Eu complex, BPVBi, BAlq, Bepp ₂ , BDPHVBi, spiro-BDPVBi, (PSA) ₂ Np Materials such as -5, (PPA) (PSA) Pe-1, BSN, APD, BSB can be used. The light-emitting dopant and a host material, for example, coumarin _{6, C 545 T, Qd4,} DEQ, perylene, DPT, DCM2, DCJTB, rubrene, DPP, CBP, ABTX, DSA , DSA amine, Co-6, PMDFB, quinacridone, Materials such as BTX, DCM, and DCJT can be used. Further, phosphorescent materials and hosts, and peripheral materials include PtOEP, TPBI, btp ₂ Ir (acac), Ir (ppy) ₃ , Flrpic, CDBP, m-CP, dendrimer Ir (ppy) ₃ , TCTA, CF− Materials such as X and CF-Y can be used.

  The hole transport layer 50 is for smoothly transporting holes injected from the lower electrode 30 to the light emitting layer 48, and has a thickness of, for example, NPB (N, N-di (naphthalyl) of about 60 nm. ) -N, N-diphenyl-benzylidene). As another hole transport layer, for example, α-NPD can be used. Here, α-NPD is 4,4-bisN- (1-naphthyl-1-) [N-phenyl-amino] -biphenyl (4,4-bis [N- (1-naphtyl-1-) N]. -phenyl-amino] -biphenyl).

  As examples of the molecular structure of the hole transport material forming the hole transport layer 50, GPD, spiro-TAD, spiro-NPD, and oxidized-TPD can be applied. Still other hole transport materials include TDAPB and MTDATA.

  The lower electrode 30 has a thickness of, for example, about 150 nm and is made of aluminum. As other constituent materials, Mo, Ag, Pt and the like are applicable.

  The organic EL layer 36 may be configured using a layer other than the hole transport layer and the electron transport layer, such as a hole injection layer and an electron injection layer.

  The operation principle of the organic EL light emitting device according to the basic configuration is as follows.

  First, a constant voltage is applied between the hole transport layer 50 and the electron transport layer 46 of the organic EL layer 36 via the lower electrode 30 and the upper electrode 38. As a result, holes are injected into the hole transport layer 50 and the light emitting layer 48, and electrons are injected from the electron transport layer 46 into the light emitting layer 48. The holes and electrons injected into the light emitting layer 48 are recombined to emit white light. The emitted white light hν passes through the upper electrode 38 and is output to the outside through the color filter 40.

  The absolute value of the HOMO (Highest Occupied Molecular Orbital) energy level of the hole transport layer 50 constituting the organic EL layer 36 is preferably larger than the absolute value of the work function of the lower electrode.

  Here, the energy level of HOMO represents the ground state of an organic molecule. The energy level of LUMO (Lowest Unoccupied Molecular Orbital) represents an excited state of an organic molecule.

  Here, the LUMO level corresponds to the lowest excited singlet level (S1). Furthermore, when electrons and holes are injected into an organic substance to form radical anions (M−) and radical cations (M +), the levels of holes and electrons are HOMO levels because there is no exciton binding energy. The electron conduction level and the hole conduction level are located outside the level and the LUMO level.

  The absolute value of the LUMO energy level of the electron transport layer 46 may be made smaller than the absolute value of the work function of the upper electrode 38.

  In the structure of the organic EL light emitting device according to the basic configuration, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like.

  In the structure of the organic EL light emitting device according to the basic configuration, a p-type organic semiconductor layer may be interposed between the light emitting layer 48 and the hole transport layer 50 or between the lower electrode 30 and the hole transport layer 50. Similarly, an n-type organic semiconductor layer may be interposed between the light emitting layer 48 and the electron transport layer 46 or between the upper electrode 38 and the electron transport layer 46.

(Block configuration of organic EL light emitting device)
An example of a schematic block configuration including a peripheral circuit of the organic EL light emitting device 8 according to the basic configuration includes a pixel array 10 and columns (see FIG. 4) arranged adjacent to each other in the column direction of the pixel array 10. Column) driver 20, a data latch circuit 16 disposed adjacent to the column driver 20 in the column direction, a horizontal shift register (H shift register) 12 disposed adjacent to the data latch circuit 16 in the column direction, A row driver 18 arranged adjacent to the row direction of the pixel array 10, a vertical shift register (V shift register) 14 arranged adjacent to the row driver 18, and arranged adjacent to the row direction of the pixel array 10. The PNM driver 22 is provided.

  The column driver 20 is connected to data lines D0, D1, D2, D3... For driving the pixels 6 in the pixel array 10.

  In the example of FIG. 4, the data latch circuit 16 is a circuit that latches the 4-bit video data signals RED [3: 0], GREEN [3: 0], and BLUE [3: 0]. The data latch circuit 16 is activated by inputting a latch enable signal LE as an external signal.

  The horizontal shift register 12 is a circuit that scans the pixel array 10 in the horizontal direction, and receives a pixel clock signal HCLK, a shift / hold switching signal DEH, and a horizontal synchronization reset signal HSYNC.

  Scan lines K0, K1, K2, K3,... That drive the pixels 6 in the pixel array 10 and the word lines WL are connected to the row driver 18.

  The vertical shift register 14 is a circuit that scans the pixel array 10 in the vertical direction, and receives a clock signal VCK, a shift / hold switching signal DEV, and a vertical synchronization reset signal VSYNC.

  The PNM driver 22 transmits PNM signals PNM0, PNM1, PNM2, PNM3,... To the scanning lines K0, K1, K2, K3,. The PNM driver 22 receives a PNM clock signal RCK and a PNM reset signal RRSTN.

  Further, the organic EL light emitting device 8 according to the basic configuration is supplied with a display power supply Vdisp of about minus 5V, for example, a system power supply VDD of about 3.3V, for example, and is also given a common ground potential of Vss.

  Each sub-pixel in the pixel array 10 of FIG. 4 has a structure having a hexagonal basic pattern. The shape of each subpixel is not limited to a hexagon, but may be a polygon such as a circle, a triangle, a square, or an octagon.

(About optical color mixing)
An organic EL display, particularly a micro display, has a problem called color mixture (crosstalk).

  When color mixing occurs, the display image quality, NTSC ratio (color gamut), and the like are degraded.

  Color mixing can be broadly divided into two types: 1) electrical color mixing (due to leakage current) in which adjacent subpixels that should be in the off state emit light, and 2) subpixels in which light leaked from the corresponding subpixel is adjacent. And optical color mixing that occurs through the color filter.

  The color mixture that can be reduced by the present invention is the optical color mixture corresponding to 2).

  Here, as a comparative example, an example of how optical color mixing (CM) occurs will be described with reference to FIG.

  As shown in FIG. 5, among the light rays (white light) emitted from the light emitting layer 48 of the organic EL layer 36, the light rays that are obliquely incident on the color filters 40 </ b> B, 40 </ b> G, and 40 </ b> R are shifted from the normal line. There is.

  The light beam deviated from the normal line enters the adjacent green color filter 40G from the blue color filter 40B, for example, and mixes with the light beam transmitted through the blue color filter 40B after passing through the color filter 40G. Thus, the blue and green rays are mixed.

  Therefore, it should originally be transmitted through only the blue color filter 40B and be visually recognized as “blue” by the naked eye of the user or the like. However, “blue-green” light is mixed in part, and the color purity is lowered and the image quality or The NTSC ratio (color gamut) and the like are lowered, and the vividness of the display is lowered.

  Such optical color mixture has become remarkable due to an increase in the aspect ratio (h / W) of the optical path with the miniaturization of the organic EL display device.

  In particular, as organic EL devices are being applied to EVF (Electric View Finder) etc. of mirrorless single-lens reflex cameras, in order to meet demands for improving the durability of microdisplays, color filters and light emitting layers Various layers such as a sealing layer tend to be provided therebetween.

  Therefore, the distance “h” between the second electrode layer 38 and the color filters 40B, 40G, and 40R shown in FIG. 5 is increased by the addition of the various layers described above, and the width “of each color filter 40B, 40G, and 40R”. The aspect ratio (h / Wp) with respect to “Wp” tends to further increase, and has a structure in which the above-described optical color mixture easily occurs.

  In the micro display, the width Wp of the color filters 40B, 40G, and 40R of one pixel is, for example, about 1 μm to about 20 μm, and the distance h between the second electrode layer 38 and the color filters 40B, 40G, and 40R is, for example, About 1 μm to about 100 μm.

[First embodiment]
(First Example of Organic EL Light Emitting Device)
A first example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 6 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the first example.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted. In the following description, the same reference numerals are used without particularly distinguishing the color resist and the color filter.

  As shown in FIG. 6, the organic EL light emitting device according to the first example includes a substrate 60, first electrode layers 30 (30 </ b> B, 30 </ b> G, 30 </ b> R) disposed on the substrate 60, and the first electrode layer 30. An organic EL layer 36 disposed on the organic EL layer 36, a second electrode layer 38 disposed on the organic EL layer 36, and a plurality of color filters 40B, 40G, and 40R disposed on the second electrode layer 38. Color mixing suppression means for suppressing optical color mixing of light emitted from the organic EL layer 36 is provided at the boundary between the color filters 40B, 40G, and 40R.

  In the organic EL light emitting device according to the first embodiment shown in FIG. 6, the color mixing suppressing means is a concave surface portion formed on the entire surface of each color filter 40B, 40G, 40R.

  Further, in the organic EL light emitting device according to the first embodiment shown in FIG. 6, the color mixing suppressing means is a peripheral portion (edge portion) of at least one kind of color filter (that is, at least one kind of color filters 40B, 40G, and 40R). ) May be formed.

  Furthermore, in the organic EL light emitting device according to the first embodiment shown in FIG. 6, the raised portion is formed to have a positive gradient from the central portion of each color filter 40B, 40G, 40R toward the peripheral portion. Also good.

  Further, the rising portion has a mountain-like cross-sectional shape (see FIG. 19). The cross-sectional shape of the raised portion is not limited to the mountain shape, and may be a trapezoidal shape.

  In the organic EL light emitting device according to the first embodiment, the substrate 60 is made of a Si wafer, glass, a plastic film with a gas barrier, or the like. Here, in the organic EL light emitting device according to the basic configuration, the substrate 60 is a Si wafer on which a CMOS LSI 600 is formed. Further, for example, a glass substrate on which an LSI made of TFT (Thin Film Transistor) is formed may be used.

The first electrode layer 30 can be made of a highly reflective metal such as Al, Mo, Ag, or Pt. Moreover, you may make it comprise the alloy (AlCu etc.) which has the said high reflectance metal as a main body. The first electrode layer 30 may be an anode material that becomes a hole injection material when oxidized. For example, Mo, V, Ru, InSn, or the like is applicable as a metal that becomes a hole injection material when oxidized. When these materials are oxidized, they become MoO _x , VO _x , RuO _x , and ITO, respectively.

  Furthermore, Ti, Cr, TiN, Ni, Ta, and W may be inserted under the first electrode layer 30 as an adhesion layer with the substrate 60.

  The second electrode layer 38 is made of a metal thin film (thickness: about 0.1 nm to about 50 nm) such as Al, Ag, MgAg, or a transparent electrode (metal oxide film) such as ITO, IZO (thickness: about 1 nm to about 500 nm). ).

  The color filters 40B, 40G, and 40R are made of a polymer material containing a pigment.

  According to the organic EL light emitting device according to the first example, a part of the light rays A1 emitted from the light emitting layer 48 of the organic EL layer 36 and shifted from the normal direction (0 °) are, for example, from the blue color filter 40B. When the light travels on the end side, the light is refracted to the normal (0 °) side by a lens effect caused by a concave portion (a raised portion) formed on the entire surface of the color filter 40B.

  Further, another light ray A2 emitted from the light emitting layer 48 of the organic EL layer 36 and deviating from the normal direction (0 °) travels, for example, a predetermined distance on the end side of the blue color filter 40B, and then the adjacent green color. Although it is incident on the filter 40G, it is refracted in the direction away from the normal line (0 °) (90 ° side) by the lens effect of the concave portion (swelled portion) formed on the entire surface of the green color filter 40G.

  Thereby, since the blue light ray A1 and the green light ray A2 travel in directions away from each other, a situation where color mixing occurs is avoided.

  Such an effect is obtained between the green color filter 40G and the red color filter 40R, between the red color filter 40R and the blue color filter 40B in relation to other pixels (not shown), or between the blue color filter 40B and the red color filter 40R. It is also demonstrated in the same way.

  Therefore, according to the organic EL light emitting device according to the first embodiment, optical color mixing is effectively reduced, and a situation in which the image quality of the display, the NTSC ratio (color gamut), and the like are reduced can be avoided.

(Second Example of Organic EL Light Emitting Device)
A second example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 7 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the second embodiment.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  As shown in FIG. 7, the organic EL light emitting device according to the second embodiment includes a substrate 60, a first electrode layer 30 (30B · 30G · 30R) disposed on the substrate 60, and a first electrode layer 30. An organic EL layer 36 disposed on the organic EL layer 36, a second electrode layer 38 disposed on the organic EL layer 36, and a plurality of color filters 40B, 40G, and 40R disposed on the second electrode layer 38. Color mixing suppression means for suppressing optical color mixing of light emitted from the organic EL layer 36 is provided at the boundary between the color filters 40B, 40G, and 40R.

  The difference from the first embodiment is that the organic EL layer 36 includes a light emitting layer 48B that emits blue light, and the color filters 40B, 40G, and 40R are configured as color conversion filters for blue light.

  The shape and the like of the color filters 40B, 40G, and 40R are the same as in the first embodiment.

According to the organic EL light emitting device according to the second example, a part of the light ray hν _B emitted from the light emitting layer 48B of the organic EL layer 36 and deviated from the normal direction (0 °) is, for example, from the blue color filter 40B. When the light travels on the end side, the light is refracted to the normal (0 °) side by the lens effect due to the concave portion (the raised portion) formed on the entire surface of the blue color filter 40B.

Further, another light ray hν _G emitted from the light emitting layer 48 of the organic EL layer 36 and deviated from the normal direction (0 °) travels, for example, by a predetermined distance on the end side of the blue color filter 40B, and then is adjacent to the green color. Although it is incident on the color filter 40G, it is refracted in the direction away from the normal line (0 °) (90 ° side) due to the lens effect of the concave portion (swelled portion) formed on the entire surface of the green color filter 40G.

As a result, the light ray hν _B and the light ray hν _G travel in directions away from each other, so that a situation where color mixing occurs is avoided.

  Such an effect is obtained between the green color filter 40G and the red color filter 40R, between the red color filter 40R and the blue color filter 40B, or between the blue color filter 40B and the red color filter 40R in relation to other pixels (not shown). It is also demonstrated in the same way.

  Therefore, according to the organic EL light emitting device according to the second embodiment, optical color mixing is effectively reduced, and a situation in which the image quality of the display, the NTSC ratio (color gamut), and the like are reduced can be avoided.

(Third embodiment of organic EL light emitting device)
A third example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 8 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the third embodiment.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the first embodiment is that a high refractive index layer 41 is formed on the surface of each color filter 40B, 40G, 40R.

The high refractive index layer 41 is made of a polymer material containing sulfur atoms, SiN _x , SiO _x N _y , SiO _x , AlO _x or the like.

  As a result, optical color mixing can be reduced, and the surfaces of the color filters 40B, 40G, and 40R can be flattened, and the light extraction efficiency can be improved.

(Fourth Example of Organic EL Light Emitting Device)
A fourth example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 9 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the fourth embodiment.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the third embodiment is that a high refractive index layer 43 also serving as a sealing layer is formed on the surface of each color filter 40B, 40G, 40R.

  The high refractive index layer 43 that also serves as the sealing layer is formed of a SiN film, a PCVD-TEOS film, or the like formed under the condition that the coverage is high.

  As a result, optical color mixing can be reduced and intrusion of moisture, oxygen and the like can be prevented, and the durability of the organic EL light emitting device can be improved. Further, the surfaces of the color filters 40B, 40G, and 40R can be flattened, and the light extraction efficiency can be improved.

  Further, since the high refractive index layer 41 also serves as a sealing layer, the manufacturing process can be reduced and the cost can be reduced.

(5th Example of organic electroluminescent light-emitting device)
A fifth example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 10 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the fifth embodiment.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the third embodiment is that a sealing layer 47 a is formed on the high refractive index layer 41.

The sealing layer 47a is made of SiN _x , SiO _x N _y , SiO _x , AlO _x or the like.

  As a result, optical color mixing can be reduced and intrusion of moisture, oxygen and the like can be prevented, and the durability of the organic EL light emitting device can be improved.

(Sixth embodiment of organic EL light emitting device)
A sixth example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 11 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the sixth example.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the fifth embodiment is that a sealing layer 47b is formed between the second electrode layer 38 and the color filters 40B, 40G, and 40R.

The sealing layer 47b _{is, SiN x, SiO x N y} , SiO x, composed etc. AlO _x.

  As a result, optical color mixing can be reduced and intrusion of moisture, oxygen and the like can be prevented, and the durability of the organic EL light emitting device can be improved. Further, the surfaces of the color filters 40B, 40G, and 40R can be flattened, and the light extraction efficiency can be improved.

(Seventh Example of Organic EL Light Emitting Device)
A seventh example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 12 is a schematic cross-sectional structure diagram of one pixel portion of the organic EL light emitting device according to the seventh embodiment.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the sixth embodiment is that a sealing layer 47a is formed on the high refractive index layer 41 in addition to the sealing layer 47b.

The sealing layers 47a and 47b are made of SiN _x , SiO _x N _y , SiO _x , AlO _x or the like.

  As a result, optical color mixing can be reduced, and intrusion of moisture, oxygen, and the like can be more effectively prevented, and the durability of the organic EL light emitting device can be further improved. Further, the surfaces of the color filters 40B, 40G, and 40R can be flattened, and the light extraction efficiency can be improved.

(Eighth Example of Organic EL Light Emitting Device)
An eighth example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 13 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the eighth embodiment.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the seventh embodiment is that a planarizing layer 49 is formed on the sealing layer 47b.

The planarization layer 49 is composed of, for example, SiN _x , SiO _x N _y , SiO _x , AlO _x , TEOS film, or the like. Moreover, the planarization layer 49 can also be comprised with a glass plate, a plastic (PET) board, etc., for example. Further, it is possible to apply a chemical mechanical polishing (CMP) technique for planarization.

  As a result, optical color mixing can be reduced, and the adhesion of the color filters 40B, 40G, and 40R can be improved, and the durability of the organic EL light emitting device can be further improved. Further, the surfaces of the color filters 40B, 40G, and 40R can be flattened, and the light extraction efficiency can be improved.

(Ninth embodiment of organic EL light emitting device)
A ninth example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 14 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the ninth example.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the first embodiment is that a protective coat layer 49 b is formed on the high refractive index layer 41.

The protective coat layer 49b is made of, for example, SiN _x , SiO _x N _y , SiO _x , AlO _x , TEOS film, or the like. Further, the protective coat layer 49b can be formed of a glass plate, a plastic (PET) plate, or the like.

  Thereby, optical color mixing can be reduced and the durability of the organic EL light emitting device can be further improved. Further, the surfaces of the color filters 40B, 40G, and 40R can be flattened, and the light extraction efficiency can be improved.

(10th Example of organic EL light-emitting device)
A tenth example of the organic EL light emitting device according to the first embodiment will be described with reference to FIG. FIG. 15 is a schematic sectional view of one pixel portion of the organic EL light emitting device according to the tenth example.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the first embodiment is that a protective plate 51 is provided on the high refractive index layer 41 via an adhesive layer 53.

  The adhesive layer 53 can be formed of, for example, a thermosetting resin, a two-component curable resin, a visible light curable resin, or the like.

  The protective plate 51 can be formed of a glass plate, a plastic (PET) plate, or the like.

  Thereby, optical color mixing can be reduced and the durability of the organic EL light emitting device can be further improved. Further, the surfaces of the color filters 40B, 40G, and 40R can be flattened, and the light extraction efficiency can be improved.

[Example of color filter configuration]
With reference to FIGS. 16-20, the structural example of the color filter applicable to the organic electroluminescent light-emitting device which concerns on this invention is demonstrated.

  A schematic planar configuration of a multilayer color filter that is applicable to the organic EL light emitting device according to the first embodiment and has a Δ array pattern example based on a hexagon is shown in FIG. Is done.

  As shown in FIG. 16, the three color filters 40R, 40G, and 40B can be arranged with a regular hexagon as a basic pattern.

  Each color filter is patterned by lithography, for example, by applying a color resist on the second electrode.

  The color resist is made of, for example, a photocurable resin, and a portion irradiated with ultraviolet rays or the like is cured to form, for example, a regular hexagonal pattern.

  The color filters 40R, 40G, and 40B are formed for each color, and the edge portions of the filters are raised. Further, they overlap each other at the edge of each filter.

That is, as shown in FIG. 16, the edge portions T _RB of the red color filter 40R and the blue color filter 40B, the edge portions T _{BR of} the blue color filter 40B and the red color filter 40R, and the edges of the green color filter 40G and the red color filter 40R. In the portion T _GR , the edge portion T _BR of the blue color filter 40B and the green color filter 40G rises and overlaps over a predetermined width (for example, about 1 μm). The width of the overlap at each edge is, for example, about 1 μm.

(SEM cross section)
An example of a bird's-eye surface SEM photograph of the organic EL light emitting device according to the first embodiment is expressed as shown in FIG. FIG. 17 shows an example in which a stacked color filter based on a hexagon is arranged on a subpixel having a hexagon as a basic pattern. According to FIG. 17, it can be seen that the edge of one type of sub-pixel rises from the red color filter 40R, the green color filter 40G, and the blue color filter 40B, and the adjacent sub-pixel partially overlaps. . According to FIG. 17, it can be seen that the edge portion is raised for at least one type of sub-pixel of the RGB filter.

  Further, in the organic EL light emitting device according to the first embodiment, an example of a cross-sectional SEM photograph showing the rising state of the edge portion of the color filter is represented as shown in FIG. 18, and the rising state of the edge portion of the color filter is shown. The schematic cross-sectional explanation shown is expressed as shown in FIG. According to FIG. 18, it can be seen that the edge portion of the color filter is raised by 0.4 μm from other portions such as the central portion.

As shown in FIG. 19, for example, the widths of the edge portions T _RG and T _GB are about 1 μm for the color filters 40B, 40G, and 40R, for example. Further, the depth D of the raised portion is, for example, about 0.4 μm as shown in FIG.

In the organic EL light emitting device according to the first embodiment, FIG. 20A is a diagram illustrating a rising state of the edge portion of the color filter, and a planar configuration showing the color filters having a plurality of rectangular patterns is shown in FIG. A schematic cross-sectional structure taken along line II in FIG. 20A is represented as shown in FIG. When the color filters 40B, 40R, 40G, 40B, 40R,... Have a rectangular pattern, as shown in FIGS. 20 (a) and 20 (b), the peripheral portion (edge portion) is a center portion or the like. The shape is raised from other parts. The thickness _DF of the color filters 40B, 40R, 40G, 40B, 40R... Including the edge portion is, for example, about 2 μm to about 3 μm, and the depth of the edge portion is, for example, about 0.4 μm.

(Method of forming the raised part)
With reference to FIG. 21 and FIG. 22, a method of forming a raised portion at the peripheral edge of the color filters 40R, 40G, and 40B will be described.

  First, a step of preparing a substrate, a step of forming a first electrode layer on the substrate, a step of forming an organic EL layer 36 on the first electrode layer, and a second electrode layer 38 on the organic EL layer 36 Through the step of forming and the step of forming a plurality of color filters 40R, 40G, and 40B on the second electrode layer 38, a configuration as shown in FIG.

  Next, a process as shown in FIG. 21B is obtained through a step of applying a resist 55 with a predetermined width to the boundary between the color filters 40R, 40G, and 40B.

  Next, the surface of the color filters 40R, 40G, and 40B coated with the resist 55 is ashed to form a raised portion at the boundary (see FIG. 21C).

  For example, as shown in FIG. 22, the ashing process can be performed by causing ozone gas to act on the surfaces of the color filters 40R, 40G, 40B, 40R,.

  As a result, the surfaces of the color filters 40R, 40G, 40B, 40R,... Are sequentially ashed in the order of A1, A2, A3, A4 as shown in FIG. 22, and the color filters 40R, 40G, 40B, 40R,. Concave portions are formed on the entire surface, and as a result, raised portions are formed at the boundaries of the color filters 40R, 40G, and 40B as shown in FIG.

  In the ashing process, the resist 55 is simultaneously ashed and disappears.

(Another example of organic EL light emitting device)
With reference to FIG. 23, another embodiment of the organic EL light emitting device will be described. FIG. 23 is a schematic cross-sectional structure diagram of one pixel portion of an organic EL light emitting device according to another embodiment.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The difference from the second embodiment described above is that the organic EL layer 36 includes a light emitting layer 48B that emits blue light, and the color filters 40G and 40R are configured by a color conversion filter for blue light.

23, the light emitted from the organic EL layer 36 is blue light hν _B , and the color filter absorbs the blue light hν _B and emits green light hν _G. And a color conversion filter 40R that absorbs blue light hν _B and emits red light.

  The shape and the like of the color filters 40G and 40R are the same as those in the first embodiment.

According to the organic EL light emitting device of this embodiment, the light ray hν _G emitted from the light emitting layer 48B of the organic EL layer 36 and deviated from the normal direction is incident on, for example, the color filter 40G and the entire surface of the color filter 40G. The lens is refracted in the direction away from the normal due to the lens effect caused by the concave portion (swelled portion) formed in.

As a result, the blue light hν _B and the green light hν _G travel in directions away from each other, so that a situation where colors are mixed is avoided.

  Therefore, according to the organic EL light emitting device according to this embodiment, the optical color mixture is effectively reduced, and a situation in which the image quality of the display, the NTSC ratio (color gamut), and the like are reduced can be avoided.

(Example of color filter configuration)
A schematic cross-sectional structure of the organic EL light emitting device according to the first embodiment on which the laminated color filter is mounted is expressed as shown in FIG.

  In the configuration example shown in FIG. 24, for example, the red color filter 40R and the green color filter 40G are configured by two layers of filters 40R1 and 40R2 and 40G1 and 40G2, respectively. The blue color filter 40B is composed of three layers of filters 40B1, 40B2, and 40B3.

  By configuring the color filter with a multilayer structure in this way, for example, when the color filter is formed of a photocurable resin, the resin can be completely cured by reaching a sufficient depth of light when curing. In addition, the color filters 40B, 40G, and 40R having excellent adhesion and the like can be formed.

  In addition, about the blue color filter 40B, the number of layers is increased to the other colors than the filter because the light curable resin containing a blue pigment easily absorbs the light beam for curing, and thus the light beam is easily transmitted. This is because it is necessary to stack thin layers.

  Note that the raised portions of the edge portions of the color filters 40B, 40G, and 40R can be formed by the method described with reference to FIGS.

  Further, a transparent protective film 42 is formed on the surface side of each of the color filters 40B, 40G, and 40R in order to fill and level the step.

(SEM cross section)
An example of a cross-sectional SEM photograph of the organic EL light emitting device according to the first embodiment on which the laminated color filter is mounted is expressed as shown in FIG. Further, an enlarged cross-sectional SEM photograph of the laminated color filter portion of FIG. 33 is represented as shown in FIG. 34, and a detailed description of the laminated color filter portion of FIG. 33 is represented as shown in FIG. FIG. 35 is obtained by adding an outline to the photograph of FIG.

  As shown in FIG. 33, the organic EL layer 36 is laminated on the CMOS LSI 600 via the lower electrode 30, and the color filter 40 and the transparent protective film 42 are further arranged on the organic EL layer 36 via the seal layer 44. ing.

  As shown in FIG. 35, the end of the green color resist 40G1 overlaps the end of the blue color resist 40B1. Similarly, the end portions of the green color resist 40G1, the blue color resist 40B2, the green color resist 40G2, and the blue color resist 40B3 are overlapped in this order. A transparent protective film 42 is disposed on the green color resist 40G2 and the blue color resist 40B3 and is flattened.

  The configuration of the color filter is not limited to the above laminated color filter, and may be a single layer configuration. A configuration having a black matrix at the edge of the color filter is also applicable.

[Second Embodiment]
(About the occurrence of color mixing)
With reference to FIG. 25, the occurrence of color mixing based on a cause different from FIG. 5 described above will be described.

  As shown in FIG. 25, for example, in the subpixel SPR including the red color filter 40R and the subpixel SPG including the green color filter 40G, the first electrode layer 30R corresponding to the subpixel SPR is turned on, and the subpixel SPG Assume that the corresponding first electrode layer 30G is in an off state.

In this case, the organic EL layer 36 corresponding to the first electrode layer 30R emits light by the voltage applied between the first electrode layer 30R and the second electrode layer 38, and the light ray hν _R is emitted in the surface direction. Is done.

  Therefore, only the red light beam that has been transmitted through the red color filter 40R should be incident on the naked eye of the user or the like.

  However, in the organic EL element, the light emitted between the first electrode layer 30R and the second electrode layer 38 is directed to the organic EL layer 36 in addition to the light emitted from the first electrode layer 30R and the second electrode layer 38. Is guided in the horizontal direction as guided light.

Therefore, this guided light is reflected by the end of the first electrode layer 30G on the adjacent subpixel SPG side, passes through the green color filter 40G, and is emitted as a green light ray hν _G from the surface side.

As a result, in addition to the red light ray hν _R , the green light ray hν _G is also incident on the user's naked eyes, and is visually recognized as a state in which red and green are mixed.

(First Example of Organic EL Light Emitting Device)
A first example of the organic EL light emitting device according to the second embodiment will be described with reference to FIG. FIG. 26 is a schematic cross-sectional structure diagram of adjacent subpixel portions of the organic EL light emitting device according to the first example.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  As shown in FIG. 2, the organic EL light emitting device according to the first example includes a substrate 60, a first electrode layer 30 (30B · 30G · 30R) disposed on the substrate 60, and a first electrode layer 30. An organic EL layer 36 disposed on the organic EL layer 36, a second electrode layer 38 disposed on the organic EL layer 36, and a plurality of color filters 40B, 40G, and 40R disposed on the second electrode layer 38. Further, at least one of the first electrode layer 30 and the second electrode layer 38 is provided with a color mixing suppressing means for suppressing optical color mixing of light emitted from the organic EL layer 36.

In the organic EL light emitting device according to the first embodiment shown in FIG. 26, the color mixing suppressing means is a tapered structure formed at 45 degrees or less (θ ₁ ≦ 45 °) at the end portions of the first electrode layers 30 ₁ and 30 _2. It is.

Thus, when the first electrode layer 30 ₁ is turned on, the guided light hv _t by tapered structures formed in the end portion of the second electrode layer 30 ₂ adjacent, without being reflected on the surface side It is guided in the horizontal direction.

Therefore, only the light ray hν ₁ emitted on the first electrode layer 30 ₁ side is incident on the naked eye to the user or the like, and no color mixing occurs.

This effect is the same when the second electrode layer 30 ₂ is turned on.

(Shape of the taper structure of the first electrode layer)
27A and 27B are diagrams illustrating an example of a tapered structure of the first electrode layer 30. FIG. 27A is a cross-sectional view in the case of having a linear inclined portion, and FIG. 27B is a curved inclined portion. It is sectional drawing in the case of having.

  FIG. 27 (a) shows a case where 30a is 45 °, and an acute angle is obtained from 45 ° in the order of 30b → 30c → 30d → 30e.

  From the viewpoint of preventing the reflection of guided light, it can be said that the sharper the angle of the tapered structure, the higher the effect. On the other hand, since the area of the upper surface of the first electrode layer 30 decreases, the voltage application may be affected. There is.

  Therefore, an appropriate angle of the tapered structure is determined in consideration of the antireflection effect of guided light and the influence on voltage application.

  FIG. 27B shows a case where the entire first electrode layer 30 has a curved inclined portion. The specific shape of the curve is determined in consideration of the antireflection effect of guided light and the influence on voltage application.

(Second Example of Organic EL Light Emitting Device)
A second example of the organic EL light emitting device according to the second embodiment will be described with reference to FIGS. FIG. 28 is a schematic cross-sectional structure diagram of adjacent subpixel portions of the organic EL light emitting device according to the second embodiment. FIG. 29A is a schematic sectional view showing another configuration of the second example of the organic EL light emitting device according to the second embodiment, and FIG. 29B is a schematic sectional view of a comparative example.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

In the organic EL light emitting device according to the second embodiment, the color mixing suppressing means is such that the position of the bottom 38 _b of the second electrode layer 38 is higher than the upper portions 30 _1t and 30 _{2t of} the first electrode layers 30 ₁ and 30 _2. The structure is formed in a direction perpendicular to 60 and upward. That is, as shown in FIG. 28, the first electrode layers 30 ₁ and 30 ₂ are formed on the substrate 60 with the upper 30 _1t and 30 _2t surfaces having a predetermined thickness from the bottoms 30 _1b and 30 _2b .

In addition, the second electrode layer 38 is formed with a bottom 38 _b corresponding to a concave portion and an upper portion 38 _{t on the} convex portion via the organic EL layer 36.

In the organic EL light emitting device according to the second embodiment, a distance H1 is formed between the upper surfaces 30 _1t and 30 _{2t of} the first electrode layers 30 ₁ and 30 ₂ and the bottom 38 _b of the second electrode layer 38. The position of the bottom 38 _b of the second electrode layer 38 is formed upward in the direction perpendicular to the substrate 60 relative to the upper portions 30 _1t and 30 _{2t of} the first electrode layers 30 ₁ and 30 ₂ .

Thereby, the light guided through the organic EL layer 36 in the horizontal direction is less reflected by the end portions of the first electrode layers 30 ₁ and 30 ₂ , and color mixing can be suppressed.

Further, as shown in FIG. 29 (a), when the recesses are formed on the substrate 60, the position of the bottom 38 _b of the second electrode layer 38 by a distance H1 than the top 30 _t of the first electrode layer 30 It may be formed above.

On the other hand, as shown in FIG. 29 (b), the position of the bottom 38 _b of the second electrode layer 38, when the amount corresponding overlapping configuration of the upper 30 _t and the distance H2 of the first electrode layer 30, an organic Since the guided light guided in the EL layer 36 in the horizontal direction is emitted to the outside through the second electrode layer 38, color mixing may occur, which is not preferable.

(Third embodiment of organic EL light emitting device)
A third example of the organic EL light emitting device according to the second embodiment will be described with reference to FIG. FIG. 30 is a schematic cross-sectional structure diagram of adjacent sub-pixel portions of the organic EL light emitting device according to the third embodiment.

  In addition, about the structure similar to the organic electroluminescent light-emitting device which concerns on a basic structure, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

In the organic EL light emitting device according to the third example, the second electrode layer 38 has a tapered structure formed at 45 degrees or less (that is, θ ₂ ≦ 45 °).

  As a result, the guided light guided in the horizontal direction through the organic EL layer 36 has reduced transmission from the second electrode layer 38 and can suppress color mixing.

[Configuration example of the first electrode]
In the organic EL light emitting devices according to the first and second embodiments, the planar configuration showing the arrangement of the first electrodes having a regular hexagon as a basic pattern is expressed as shown in FIG. A schematic cross-sectional structure taken along line II-II in FIG. 31 is represented as shown in FIG. 32A, and a schematic cross-sectional structure taken along line III-III in FIG. 31 is shown in FIG. Represented as shown.

  With reference to FIG. 31 and FIG. 32, the structural example of the 1st electrode applicable to the organic electroluminescent light emitting device concerning the 1st-2nd embodiment is demonstrated.

  As shown in FIG. 31, the first electrode layers 30R, 30G, and 30B corresponding to the three colors of RGB are formed in a regular hexagonal shape with a metal having a high reflectance such as Al, Mo, Ag, and Pt.

  As shown in FIG. 32 (a) and FIG. 32 (b), the end portions of the first electrode layers 30R, 30G, and 30B are formed with a tapered structure, and as in the first embodiment shown in FIG. The taper angle is 45 degrees or less.

  As a result, the guided light that guides the organic EL layer in the horizontal direction is less reflected by the end portions of the first electrode layers 30R, 30G, and 30B, and color mixing can be suppressed.

  As described above, according to the present invention, it is possible to provide an organic EL light emitting device capable of reducing optical color mixing at a low cost and a manufacturing method thereof.

[Other embodiments]
As described above, the embodiments have been described. However, it should be understood that the descriptions and drawings constituting a part of this disclosure are illustrative and do not limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  As described above, the present invention includes various embodiments not described herein.

  The organic EL light-emitting device of the present invention can be applied to an organic EL micro display, an electronic viewfinder (EVF), a head mounted display, an organic EL display, organic EL illumination, and the like.

6 ... Pixel 8 ... organic EL light emitting device 10 ... pixel array 12 ... horizontal shift register 14 ... vertical shift register 16 ... data latch circuit 18 ... row driver 20 ... column driver 22 ... PNM driver 30, 30 _1, 30 ₂ ... lower electrode (First electrode layer)
30 _t , 30 _1t , 30 _2t , 38 _t ... upper part 30 _1b , 30 _2b , 38 _b ... bottom part 34 ... drive circuit 36 ... organic EL layer 38 ... upper electrode (second electrode layer)
DESCRIPTION OF SYMBOLS 40 ... Color filter 41 ... High refractive index layer 42 ... Transparent protective film 43 ... High refractive index layer 44 ... Sealing layer 46 ... Electron carrying layer 47a, 47b ... Sealing layer 48, 48B ... Light emitting layer 49 ... Flattening layer 49b ... Protective coat layer 50 ... Hole transport layer 51 ... Protective plate 52, 54 ... Electrode 53 ... Adhesive layer 55 ... Resist 56 ... Gate electrode 58 ... Semiconductor substrate 60 ... Substrate 70 ... VIA electrode 600 ... CMOS LSI

Claims (21)

A substrate,
A first electrode layer disposed on the substrate;
An organic EL layer disposed on the first electrode layer;
A second electrode layer disposed on the organic EL layer;
A plurality of color filters disposed on the second electrode layer,
An organic EL light emitting device characterized in that color mixing suppression means for suppressing optical color mixing of light emitted from the organic EL layer is provided at a boundary between the color filters.   The organic EL light emitting device according to claim 1, wherein the color mixture suppressing unit is a raised portion formed at a peripheral portion of at least one kind of the color filter.   The organic EL light emitting device according to claim 2, wherein the raised portion is formed to have a positive gradient from a central portion to a peripheral portion of each color filter.   The organic EL light emitting device according to claim 2, wherein the swelled portion is formed in a mountain shape in cross section.   The organic EL light-emitting device according to claim 2, wherein the raised portion has a trapezoidal cross-sectional shape.   2. The organic EL light emitting device according to claim 1, wherein the color mixture suppressing means is a concave surface portion formed on the entire surface of each color filter.   The organic EL light-emitting device according to claim 1, wherein at least one of a high refractive index layer and a sealing layer is formed on the surface of each color filter.   The organic EL light-emitting device according to claim 1, wherein a sealing layer is formed between the second electrode layer and each color filter.   The organic EL light emitting device according to claim 8, wherein a planarizing layer is formed on the sealing layer.   The organic EL light-emitting device according to claim 7, wherein a protective coat layer is formed on the high refractive index layer.   The organic EL light-emitting device according to claim 7, wherein a protective plate is provided on the high refractive index layer via an adhesive layer.   The light beam emitted from the organic EL layer is white light, and the color filter is composed of three color filters of red, green, and blue. The organic EL light emitting device described.   The light emitted from the organic EL layer is blue light, and the color filter absorbs the blue light and emits green light, and the color conversion filter absorbs the blue light and emits red light. The organic EL light-emitting device according to claim 1, wherein   The organic EL light-emitting device according to claim 1, wherein a planar shape of each color filter is a hexagon. A substrate,
A first electrode layer disposed on the substrate;
An organic EL layer disposed on the first electrode layer;
A second electrode layer disposed on the organic EL layer;
A plurality of color filters disposed on the second electrode layer,
An organic EL light emitting device, wherein color mixing suppression means for suppressing optical color mixing of light emitted from the organic EL layer is provided on at least one of the first electrode layer and the second electrode layer.   16. The organic EL light emitting device according to claim 15, wherein the color mixture suppressing means has a tapered structure formed at 45 degrees or less at an end portion of the first electrode layer.   The organic EL light emitting device according to claim 16, wherein the tapered structure has a linear inclined portion.   The organic EL light emitting device according to claim 16, wherein the tapered structure has a curved inclined portion.   19. The structure according to claim 15, wherein the color mixture suppressing unit has a structure in which a position of a bottom portion of the second electrode layer is formed above an upper portion of the first electrode layer. The organic EL light-emitting device described in 1.   The organic EL light-emitting device according to claim 15, wherein the second electrode layer has a tapered structure formed at 45 degrees or less. Preparing a substrate;
Forming a first electrode layer on the substrate;
Forming an organic EL layer on the first electrode layer;
Forming a second electrode layer on the organic EL layer;
Forming a plurality of color filters on the second electrode layer;
Applying a resist with a predetermined width at the boundary of each color filter;
Ashing the surface of the color filter coated with the resist to form a raised portion at the boundary. A method for manufacturing an organic EL light emitting device.