JP2013251504A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2013251504A JP2013251504A JP2012127410A JP2012127410A JP2013251504A JP 2013251504 A JP2013251504 A JP 2013251504A JP 2012127410 A JP2012127410 A JP 2012127410A JP 2012127410 A JP2012127410 A JP 2012127410A JP 2013251504 A JP2013251504 A JP 2013251504A
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- resin
- layer
- light emitting
- radical polymerization
- emitting device
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- 229920005989 resin Polymers 0.000 claims abstract description 64
- 239000011347 resin Substances 0.000 claims abstract description 64
- 238000010526 radical polymerization reaction Methods 0.000 claims abstract description 46
- 239000003566 sealing material Substances 0.000 claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract 2
- 229920002050 silicone resin Polymers 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000945 filler Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000004383 yellowing Methods 0.000 description 2
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】本発明の一態様に係る発光装置10は、発光素子2と、発光素子2を封止する封止材6と、を有し、封止材6は、発光素子2に接するラジカル重合型樹脂からなる第1の層6aと、第1の層6aの上面を覆う非ラジカル重合型樹脂からなる第2の層6bとを有する。
【選択図】図1
Description
図1は、実施の形態に係る発光装置の垂直断面図である。発光装置10は、リードフレーム1に実装された発光素子2と、発光素子2を封止する封止材6と、を有する。リードフレーム1、発光素子2、及び封止材6は、ケース5内に形成される。
本実施の形態によれば、封止材6の大部分を占める第1の層6aをラジカル重合型樹脂で形成することにより、樹脂材料の廃棄量を減らし、また、発光装置10の信頼性を向上させることができる。そして、第1の層6aの上面を覆う非ラジカル重合型樹脂からなる第2の層6bを形成することにより、第1の層6aの硬化不良を抑えることができる。
6 封止材
6a 第1の層
6b 第2の層
10 発光装置
Claims (5)
- 発光素子と、
前記発光素子を封止する封止材と、
を有し、
前記封止材は、前記発光素子に接するラジカル重合型樹脂からなる第1の層と、前記第1の層の上面を覆う非ラジカル重合型樹脂からなる第2の層とを有する、発光装置。 - 前記非ラジカル重合型樹脂は、熱硬化性樹脂である、
請求項1に記載の発光装置。 - 前記非ラジカル重合型樹脂は、非ラジカル重合型のシリコーン樹脂である、
請求項2に記載の発光装置。 - 前記非ラジカル重合型樹脂は、非ラジカル重合型のエポキシ樹脂である、
請求項2に記載の発光装置。 - 前記第1の層の最も薄い部分の厚さは前記第2の層の最も厚い部分の厚さよりも厚い、 請求項3又は4に記載の発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012127410A JP5949180B2 (ja) | 2012-06-04 | 2012-06-04 | 発光装置の製造方法 |
US13/892,101 US9123646B2 (en) | 2012-06-04 | 2013-05-10 | Light-emitting device |
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Application Number | Priority Date | Filing Date | Title |
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JP2012127410A JP5949180B2 (ja) | 2012-06-04 | 2012-06-04 | 発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013251504A true JP2013251504A (ja) | 2013-12-12 |
JP5949180B2 JP5949180B2 (ja) | 2016-07-06 |
Family
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JP2012127410A Active JP5949180B2 (ja) | 2012-06-04 | 2012-06-04 | 発光装置の製造方法 |
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US (1) | US9123646B2 (ja) |
JP (1) | JP5949180B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018181588A1 (ja) * | 2017-03-31 | 2018-10-04 | シャープ株式会社 | アイセーフ光源およびアイセーフ光源の製造方法 |
US10276757B2 (en) | 2016-12-27 | 2019-04-30 | Nichia Corporation | Light emitting device and method for manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5298786A (en) * | 1976-02-16 | 1977-08-18 | Nippon Musical Instruments Mfg | Production of thermosetting resin structure |
JP2007329467A (ja) * | 2006-05-10 | 2007-12-20 | Hitachi Chem Co Ltd | 光半導体装置及びその製造方法 |
JP2010034292A (ja) * | 2008-07-29 | 2010-02-12 | Toyoda Gosei Co Ltd | 発光装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0578832B1 (en) * | 1992-01-31 | 1998-11-04 | Kansai Paint Co., Ltd. | Resin composition for water-base coating material |
JP2007184404A (ja) | 2006-01-06 | 2007-07-19 | Showa Highpolymer Co Ltd | オプトデバイス封止用透明樹脂組成物およびledパッケージ |
KR100879864B1 (ko) * | 2007-06-28 | 2009-01-22 | 삼성모바일디스플레이주식회사 | 발광 표시 장치 및 그의 제조 방법 |
JP5417888B2 (ja) | 2009-02-24 | 2014-02-19 | 豊田合成株式会社 | 発光装置の製造方法 |
-
2012
- 2012-06-04 JP JP2012127410A patent/JP5949180B2/ja active Active
-
2013
- 2013-05-10 US US13/892,101 patent/US9123646B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5298786A (en) * | 1976-02-16 | 1977-08-18 | Nippon Musical Instruments Mfg | Production of thermosetting resin structure |
JP2007329467A (ja) * | 2006-05-10 | 2007-12-20 | Hitachi Chem Co Ltd | 光半導体装置及びその製造方法 |
JP2010034292A (ja) * | 2008-07-29 | 2010-02-12 | Toyoda Gosei Co Ltd | 発光装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10276757B2 (en) | 2016-12-27 | 2019-04-30 | Nichia Corporation | Light emitting device and method for manufacturing the same |
US10741733B2 (en) | 2016-12-27 | 2020-08-11 | Nichia Corporation | Light emitting device |
WO2018181588A1 (ja) * | 2017-03-31 | 2018-10-04 | シャープ株式会社 | アイセーフ光源およびアイセーフ光源の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20130320391A1 (en) | 2013-12-05 |
JP5949180B2 (ja) | 2016-07-06 |
US9123646B2 (en) | 2015-09-01 |
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