JP2013246021A5 - - Google Patents
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- Publication number
- JP2013246021A5 JP2013246021A5 JP2012119424A JP2012119424A JP2013246021A5 JP 2013246021 A5 JP2013246021 A5 JP 2013246021A5 JP 2012119424 A JP2012119424 A JP 2012119424A JP 2012119424 A JP2012119424 A JP 2012119424A JP 2013246021 A5 JP2013246021 A5 JP 2013246021A5
- Authority
- JP
- Japan
- Prior art keywords
- pair
- semiconductor substrate
- support member
- electromagnetic wave
- vias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000001514 detection method Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims 4
- 239000000470 constituent Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 2
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012119424A JP2013246021A (ja) | 2012-05-25 | 2012-05-25 | 熱型電磁波検出素子、熱型電磁波検出素子の製造方法、熱型電磁波検出装置および電子機器 |
| US13/902,329 US9006856B2 (en) | 2012-05-25 | 2013-05-24 | Thermal electromagnetic wave detection element, method for producing thermal electromagnetic wave detection element, thermal electromagnetic wave detection device, and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012119424A JP2013246021A (ja) | 2012-05-25 | 2012-05-25 | 熱型電磁波検出素子、熱型電磁波検出素子の製造方法、熱型電磁波検出装置および電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013246021A JP2013246021A (ja) | 2013-12-09 |
| JP2013246021A5 true JP2013246021A5 (enExample) | 2015-06-11 |
Family
ID=49620943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012119424A Withdrawn JP2013246021A (ja) | 2012-05-25 | 2012-05-25 | 熱型電磁波検出素子、熱型電磁波検出素子の製造方法、熱型電磁波検出装置および電子機器 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9006856B2 (enExample) |
| JP (1) | JP2013246021A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013114244B3 (de) * | 2013-12-17 | 2015-01-22 | Pyreos Ltd. | ATR-Infrarotspektrometer |
| WO2018193825A1 (ja) * | 2017-04-17 | 2018-10-25 | パナソニックＩｐマネジメント株式会社 | 焦電センサ素子及びこれを用いた焦電センサ |
| KR102356361B1 (ko) * | 2017-06-26 | 2022-01-26 | 에이에스엠엘 네델란즈 비.브이. | 변형 결정 방법 |
| WO2019021874A1 (ja) * | 2017-07-28 | 2019-01-31 | パイオニア株式会社 | 電磁波検出装置 |
| JP7353748B2 (ja) * | 2018-11-29 | 2023-10-02 | キヤノン株式会社 | 半導体装置の製造方法および半導体装置 |
| GB201902452D0 (en) * | 2019-02-22 | 2019-04-10 | Pyreos Ltd | Microsystem and method for making the microsystem |
| JP7340965B2 (ja) * | 2019-06-13 | 2023-09-08 | キヤノン株式会社 | 半導体装置およびその製造方法 |
| JP7718914B2 (ja) * | 2021-08-30 | 2025-08-05 | Tdk株式会社 | 構造体及び電磁波センサ |
| GB2599809A (en) | 2021-11-12 | 2022-04-13 | Univ Of Twente | An apparatus comprising a local oscillator for driving a mixer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005488A (ja) * | 2003-06-12 | 2005-01-06 | Dainippon Printing Co Ltd | 半導体モジュールおよびそれらの製造方法 |
| JP4158830B2 (ja) * | 2005-11-25 | 2008-10-01 | 松下電工株式会社 | 熱型赤外線検出装置の製造方法 |
| JP5644121B2 (ja) * | 2010-01-26 | 2014-12-24 | セイコーエプソン株式会社 | 熱型光検出器、熱型光検出装置、電子機器および熱型光検出器の製造方法 |
| JP5589486B2 (ja) | 2010-03-26 | 2014-09-17 | セイコーエプソン株式会社 | 焦電型光検出器、焦電型光検出装置及び電子機器 |
| JP5558189B2 (ja) * | 2010-04-26 | 2014-07-23 | 浜松ホトニクス株式会社 | 赤外線センサ及びその製造方法 |
| JP5830877B2 (ja) * | 2011-02-24 | 2015-12-09 | セイコーエプソン株式会社 | 焦電型検出器、焦電型検出装置及び電子機器 |
-
2012
- 2012-05-25 JP JP2012119424A patent/JP2013246021A/ja not_active Withdrawn
-
2013
- 2013-05-24 US US13/902,329 patent/US9006856B2/en not_active Expired - Fee Related
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