JP2013243172A - Peeling device and peeling method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a peeling device and a peeling method capable of avoiding the risk that bumps formed on a substrate are damaged by a support body in a state where the support body is peeled off from a substrate.SOLUTION: A peeling device 20 includes: a stage 23 on which a laminate 1 is placed while turning down the wafer 3 side; and a chamber 21 which supplies a solvent dissolving an adhesive layer to the laminate 1 in a state in contact with the stage 23. The stage 23 is formed so that a placement part 23a placing the laminate therein is recessed in a curved surface shape from the surface of the stage 23.

Description

  The present invention relates to a peeling apparatus and a peeling method for peeling the support from a laminate in which a substrate, an adhesive layer, and a support that supports the substrate are laminated in this order.

  Regarding a laminated body formed by laminating a substrate, an adhesive layer, and a support that supports the substrate in this order, for example, Patent Document 1 discloses that air bubbles are involved when a thin substrate is attached to an object to be attached. In addition, there is described a substrate sticking device that prevents wrinkles and the like after being attached. Specifically, Patent Document 1 describes that a silicon wafer that is a thin substrate is bent and attached to a GaAs substrate (support) that is an object to be attached.

JP 2009-10072 (published on January 15, 2009)

  However, in Patent Document 1, although the technical content related to bonding a silicon wafer to a GaAs substrate is described, the technical content related to peeling the GaAs substrate from the silicon wafer is not described at all.

  When a GaAs substrate is peeled from a curved silicon wafer by a general method, stress is released at the time of peeling, and an impact is applied, which may cause damage to the silicon wafer.

  In Patent Document 1, no description is given of the positional relationship between the bumps formed on the silicon wafer and the GaAs substrate until the GaAs substrate is transported after the GaAs substrate is peeled from the silicon wafer. It has not been.

  When the support is peeled from the substrate by a general method, the support is placed on the substrate until the support is transported using a transport device such as a robot arm after the stripping. There is a disadvantage that there is a risk of contact with the bumps formed on the substrate to cause damage. If the bumps are damaged, bonding failure occurs when the substrates are bonded at the time of mounting.

  The present invention has been made in view of the above problems, and in the state where the support is peeled from the substrate, the peeling device that can avoid the possibility that the bumps formed on the substrate are damaged by the support. The main purpose is to provide a peeling method.

  In order to solve the above problems, a peeling apparatus according to the present invention includes a substrate, an adhesive layer, and a plurality of through holes penetrating in the thickness direction, and a support that supports the substrate is stacked in this order. A peeling device for peeling the support from the laminated body, a stage on which the laminated body is placed with the substrate side down, and a stage that is detachable from the stage. A chamber is formed so as to cover at least the laminated body placed on the stage, and is configured to supply a solvent for dissolving the adhesive layer in contact with the stage to the laminated body. The mounting portion to be mounted is formed so as to be recessed in a curved shape from the surface of the stage.

  Further, the peeling method according to the present invention includes a substrate, an adhesive layer, and a laminate having a plurality of through holes penetrating in the thickness direction and laminating a support that supports the substrate in this order, A peeling method for peeling the support, after placing the laminate with the substrate side facing down on a stage where the placement portion on which the laminate is placed is recessed from the stage surface in a curved shape The solvent for dissolving the adhesive layer is supplied to the laminate from at least the support side.

  According to the peeling apparatus according to the present invention, since the mounting portion on which the stacked body is mounted is formed so as to be recessed in a curved shape from the surface of the stage, the substrate, the adhesive layer, and the support body that supports the substrate are provided. From the laminated body laminated in this order, for example, when the adhesive layer is dissolved using a solvent and the support is peeled off, the substrate placed on the stage mounting portion is separated from the flat plate by being peeled off. A gap is generated between the support and the restored support. That is, in the state where the support is peeled from the substrate, the support can be avoided from being placed on the substrate by the gap. Therefore, it is possible to avoid the possibility that the bumps formed on the substrate are damaged by the support in a state where the support is peeled from the substrate.

  Further, according to the peeling method according to the present invention, after the stacked body is placed with the substrate side down on the stage formed so that the placing portion is recessed in a curved shape from the stage surface, it is bonded using a solvent. Since the layer is dissolved and the support is peeled off, it is possible to prevent the support from being placed on the substrate by the gap in a state where the support is peeled off from the substrate. Therefore, it is possible to avoid the possibility that the bumps formed on the substrate are damaged by the support in a state where the support is peeled from the substrate.

It is sectional drawing which shows the schematic structure of the peeling apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the structure of the outline of the stage which is the principal part of the said peeling apparatus. It is sectional drawing which shows the schematic shape of the said stage. It is a schematic sectional drawing which shows a mode that the laminated body of the state which became possible to peel a support plate from a wafer is mounted in the said peeling apparatus.

  The peeling apparatus according to the present invention includes a substrate, an adhesive layer, a plurality of through-holes penetrating in the thickness direction, and a support body that supports the substrate, which is stacked in this order, and the support. A peeling apparatus for peeling a body, a stage on which a laminated body is placed with the substrate side down, and a laminated body that is provided detachably with respect to the stage and placed on the stage The chamber includes a chamber that is formed so as to cover at least the solvent for dissolving the adhesive layer while being in contact with the stage, and the stage has a mounting portion on which the stack is placed. It is the structure formed so that it may become depressed in the curved surface form.

  Further, the peeling method according to the present invention includes a substrate, an adhesive layer, and a laminate having a plurality of through holes penetrating in the thickness direction and laminating a support that supports the substrate in this order, A peeling method for peeling the support, after placing the laminate with the substrate side facing down on a stage where the placement portion on which the laminate is placed is recessed from the stage surface in a curved shape In this method, a solvent for dissolving the adhesive layer is supplied to the laminate from at least the support side.

  First, the laminated body which is the object of the peeling process in the present embodiment will be described below with reference to FIGS.

[Laminate]
As shown in FIGS. 1 and 2, the laminate 1 that is the object of the peeling process includes a wafer (substrate) 3, an adhesive layer (not shown), and a support plate (support) 2 that supports the wafer 3. They are stacked in this order. That is, the laminated body 1 has an adhesive layer formed by applying an adhesive to one of the wafer 3 and the support plate 2 or by attaching an adhesive tape to which the adhesive is applied. Thereafter, the wafer 3, the adhesive layer, and the support plate 2 are formed by being laminated in this order.

  However, the forming method and forming apparatus for forming the laminate 1, that is, the method for forming the adhesive layer and the adhesive layer forming apparatus, and the method for superposing the wafer 3 and the support plate 2 and the apparatus for superposing them are particularly limited. Instead, various methods and apparatuses can be employed. Hereinafter, the wafer 3, the adhesive layer, and the support plate 2 will be described.

<Wafer (substrate)>
The wafer 3 is not limited to a semiconductor wafer made of silicon, and may be an arbitrary substrate such as a thin ceramic substrate, a thin film substrate, or a flexible substrate that needs to be supported by the support plate 2. The shape of the wafer 3 may be circular, or may be non-circular by having an orientation flat in part. On the surface of the wafer 3, that is, on the opposite surface of the support plate 2, a fine structure of an electronic element such as an electronic circuit is formed, and a plurality of bumps 3 a for bonding the wafer 3 at the time of mounting are formed. The size of the bump 3a is not particularly limited, but is usually 80 μm or less in diameter, more preferably 40 μm or less.

  The wafer 3 is subjected to processes such as thinning, conveyance, and mounting while being supported (attached) to the support plate 2.

  The dicing tape 5 is attached to the back surface of the wafer 3, that is, the back surface of the support plate 2 at least in the stage (process) until the peeling process for peeling the support plate 2 from the wafer 3 is performed. . As the dicing tape 5, a resin film such as PVC (polyvinyl chloride), polyolefin, or polypropylene can be used as the base film. Then, the dicing tape 5 is fixed to the dicing frame 6 until a peeling process for peeling the support plate 2 from the wafer 3 is performed. The surface of the dicing tape 5, that is, the opposite surface of the support plate 2 has resistance to a nonpolar solvent or a high polarity solvent used as a solvent (described later) for dissolving the adhesive layer of the laminate 1. Usually, an acrylic protective layer is formed. The dicing frame 6 is fixed by a jig (not shown) of a peeling device when performing the peeling process.

<Adhesive layer>
The adhesive layer is formed of an adhesive compound that is soluble in a solvent. Therefore, the adhesive layer is dissolved by the solvent, so that the support plate 2 can be peeled from the wafer 3.

  Examples of the adhesive compound exhibiting solubility in the solvent include hydrocarbon resins, acrylic resins, styrene resins, maleimide resins, elastomers, and the like, or combinations thereof.

  Examples of the hydrocarbon resin include resins such as cycloolefin polymers having a structural unit derived from cycloolefin, terpene resins, and the like, but are not limited thereto.

  Specifically, for the adhesive layer, an adhesive compound suitable for various treatments applied to the laminate 1 is selected and used in consideration of various conditions such as a combination with a solvent used for peeling, among these adhesive compounds. The

  The method for forming the adhesive layer, that is, the method for applying the adhesive to the wafer 3 or the support plate 2 or the method for forming the adhesive tape by applying the adhesive to the substrate is not particularly limited. However, examples of the method for applying the adhesive include a spin coating method, a dipping method, a roller blade method, a spray method, a doctor blade method, and a slit nozzle method.

  The thickness of the adhesive layer (layer thickness) may be thicker than the height of the bump 3a formed on the surface of the wafer 3, but the adhesiveness and heat resistance between the wafer 3 and the support plate 2 can be maintained. A thickness is preferred. Specifically, the thickness of the adhesive layer is preferably in the range of 10 μm or more and 150 μm or less, and more preferably in the range of 15 μm or more and 100 μm or less. The adhesive layer can be formed by applying the adhesive compound on the wafer 3 or the support plate 2 and solidifying it into a layer. Alternatively, the adhesive compound that has been solidified in advance in a layered form may be attached to the wafer 3 or the support plate 2.

<Support plate (support)>
As shown in FIG. 1, the support plate 2 is a so-called perforated support plate having a plurality of through holes 10 that penetrate in the thickness direction, specifically, thousands or more. By using the support plate 2 having the through hole 10, when the support plate 2 is peeled from the wafer 3, the solvent can be supplied to the entire adhesive layer through the through hole 10. The material of the support plate 2 is not limited to a metal such as glass or stainless steel, and may be any material having a strength capable of supporting the wafer 3. The support plate 2 may have any shape that can support the wafer 3, but preferably has a shape corresponding to the shape of the wafer 3.

  The “support plate” in this specification is a support plate that is temporarily used to protect the wafer 3 when the wafer 3 is handled, and more preferably, for example, when grinding a semiconductor wafer. In addition, it is a support plate that is temporarily used to protect the semiconductor wafer thinned by grinding so as not to crack and warp by being bonded to the semiconductor wafer. However, the support according to the present invention is not limited to the “support plate” described above, and may be any support plate that supports the wafer 3.

  The numerous through holes 10 are regularly arranged on the entire surface of the support plate 2. Specifically, the numerous through holes 10 are arranged in a lattice shape or a concentric shape over the entire surface of the support plate 2. The distance (pitch) between the centers of the adjacent through-holes 10 and 10 is preferably 0.5 mm or more and 1.0 mm or less, although it depends on, for example, the combination of the adhesive compound forming the adhesive layer and the solvent. More preferably, it is 0.5 mm or more and 0.7 mm or less. Further, the diameter of the through hole 10 is preferably 0.2 mm or more and 0.5 mm or less, and more preferably 0.25 mm or more and 0.4 mm or less.

  Furthermore, the through-hole 10 is formed from the central part of the support plate 2 to the peripheral part in consideration of the difference in the dissolution rate of the adhesive compound by the solvent, that is, the dissolution rate of the adhesive layer, between the central part and the peripheral part in the laminate 1. As it goes to, it may be arranged sparsely.

[Peeling device]
A peeling apparatus according to an embodiment of the present invention will be described below with reference to FIG.

  The peeling apparatus 20 includes a support plate from a laminate 1 including a wafer (substrate) 3, an adhesive layer (not shown), and a support plate (support plate) 2 attached to the wafer 3 via the adhesive layer. It is an apparatus for peeling 2. The peeling apparatus 20 includes a solvent supply chamber (chamber) 21 for supplying a solvent for dissolving the adhesive layer to the laminate 1 and retaining the solvent on the laminate 1, and a placement portion 23 a for placing the laminate 1. And a stage 23. The stacked body 1 is placed on the placement portion 23a with the wafer 3 side down.

  The solvent supply chamber 21 is provided so as to be detachable from the stage 23 and is formed so as to cover at least the stacked body 1 placed on the stage 23, and a solvent that dissolves the adhesive layer in contact with the stage 23. The laminate 1 is supplied. Specifically, the solvent supply chamber 21 is movably supported so as to be in contact with and separated from the stage 23 by a separation apparatus (not shown), and is attached to the wafer 3 side of the laminate 1 at the time of peeling. By contacting the dicing tape 5 from the side of the support plate 2, a retention portion 22 for retaining the solvent is formed between the dicing tape 5 and the stage 23. That is, the staying portion 22 is a space portion formed between the solvent supply chamber 21 and the dicing tape 5 that is configured by the solvent supply chamber 21 contacting the stage 23 via the dicing tape 5. And the solvent supply chamber 21 accommodates the laminated body 1 in the inside, ie, the retention part 22, and supplies the solvent which melt | dissolves an adhesive layer to the laminated body 1 in the state which contact | connected the stage 23. FIG.

  Accordingly, the solvent supply chamber 21 is configured such that its inner diameter (the diameter of the retention portion 22) is larger than the outer diameter (maximum diameter) of the laminate 1. Thereby, the laminated body 1 can be covered by the solvent supply chamber 21, and the laminated body 1 can be accommodated in the retention part 22. The horizontal cross-sectional shape of the solvent supply chamber 21 (the horizontal shape of the retention portion 22) may not be similar to the horizontal shape of the stacked body 1 (the shape of the wafer 3 or the support plate 2). . That is, the retention part 22 does not need to have a shape corresponding to the shape of the stacked body 1, and the shape thereof is not particularly limited as long as the stacked body 1 can be accommodated therein. For example, when the surface of the laminated body 1 on the side of the support plate 2 has an orientation flat, if the laminated body 1 can be accommodated, the surface of the solvent supply chamber 21 that faces the support plate 2 has a portion corresponding to the orientation flat. It may be a circular shape that does not have.

  Further, an O-ring 24 is provided at a portion of the solvent supply chamber 21 that contacts the dicing tape 5. By the sealing by the O-ring 24, the solvent supplied into the staying portion 22 is prevented from leaking outside. The material of the O-ring 24 is not particularly limited as long as it is resistant to the solvent. For example, a Teflon (registered trademark) capsule O-ring is preferable. The O-ring 24 is preferably configured so as not to hinder the rotation of the solvent supply chamber 21 when the peeling device 20 includes the rotation unit 28. Further, instead of providing the O-ring 24, the solvent supply chamber 21 holds the solvent in the retention portion 22 by the surface tension of the contact portion between the solvent supply chamber 21 and the dicing tape 5, and the solvent leaks to the outside. There may be no configuration.

  Further, the solvent supply chamber 21 is provided with a decompression device (not shown) that draws the gas in the staying part 22 into a reduced pressure state by sucking the gas in the staying part 22 and a solvent to the staying part 22. The central supply port (supply port) 29 and at least one discharge port (recovery port) 30 for discharging the solvent in the staying part 22 are provided (FIG. 1 provides two discharge ports 30). Show the case). The central supply port 29 is provided so as to penetrate from the central part of the surface (inner surface) of the solvent supply chamber 21 on the laminated body 1 side to the outer side surface of the solvent supply chamber 21. Further, the discharge port 30 is provided so as to penetrate from the surface (inner surface) on the laminated body 1 side in the solvent supply chamber 21 to the outer side surface of the solvent supply chamber 21. The discharge port 30 is connected to decompression means such as a vacuum pump (not shown), and the solvent is discharged to the outside by reducing the pressure in the discharge port 30.

  The staying part 22 may have a size (depth) that allows the solvent that stays for a certain period of time after being supplied into the staying part 22 to permeate into the laminate 1. Further, the staying part 22 may be configured such that the solvent supplied from the central supply port 29 is discharged from the discharge port 30 so that the solvent flows in the staying part 22.

  The peeling apparatus 20 includes at least one vibration unit 27 that is provided on the solvent supply chamber 21 and vibrates at least the solvent supplied into the solvent supply chamber 21. The vibration unit 27 includes, for example, a vibrator that generates vibration when the vibration unit 27 itself vibrates, an ultrasonic generator (ultrasonic wave generation unit) that generates ultrasonic (US) vibration, and the like. As the vibration unit 27, an ultrasonic generator that applies ultrasonic vibration to the laminate 1 is more preferable. Further, when a plurality of vibration parts 27 are provided, the solvent supply chamber 21 is equally spaced from each other so that vibrations generated in the vibration parts 27 are transmitted to the entire solvent staying in the stay part 22. Is preferably arranged. In the present embodiment, at least seven vibration parts 27 for generating ultrasonic waves are provided on the solvent supply chamber 21, but the present invention is not limited to this, and at least one vibration part 27 is provided. More specifically, the number of vibrating portions 27 may be increased or decreased as appropriate according to the size of the laminated body 1 to be processed.

  Further, the peeling apparatus 20 includes a vibration transmission unit 26 that transmits the vibration generated in the vibration unit 27 to the solvent staying in the staying portion 22. The vibration transmitting unit 26 is located between the vibrating unit 27 and the staying unit 22. The vibration transmission unit 26 may be formed integrally with the solvent supply chamber 21. The vibration transmitting unit 26 is configured to transmit the vibration generated in the vibrating unit 27 to the entire solvent staying in the staying part 22 and is configured by a housing having a cavity inside. Specifically, the casing of the vibration transmission unit 26 is formed in a so-called donut shape centering on the central portion of the solvent supply chamber 21, and thereby the cavity is positioned below the vibration unit 27. ing. However, the cavity of the vibration transmitting unit 26 may be filled with a liquid such as water. When the cavity of the vibration transmitting unit 26 is filled with liquid, the vibration from the vibrating unit 27 is diffused in the liquid. Therefore, it is possible to transmit the vibration from the vibration unit 17 to the solvent over a wider range.

  The housing of the vibration transmitting unit 26 is made of a metal such as stainless steel having good vibration transmission efficiency so that the vibration from the vibrating unit 27 can be efficiently transmitted to the solvent in the staying unit 22. Is preferred. The length of the vibration transmitting unit 26 in the thickness direction (vertical direction) is such that the amplitude of vibration transmitted from the vibrating unit 27 is maximized when the vibration transmitting unit 26 reaches the surface of the staying unit 22 side. It is preferable to make the length. Thereby, vibration can be efficiently transmitted to the solvent in the retention part 22.

  The peeling apparatus 20 further includes a rotating unit 28 that rotates the vibrating unit 27 in the horizontal direction with respect to the laminate 1 by rotating the solvent supply chamber 21 continuously or discontinuously as necessary. May be. By rotating the vibration part 27 in the horizontal direction with respect to the laminated body 1, the vibration generated in the vibration part 27 is uniformly transmitted by the solvent in the staying part 22, so that the solvent is more uniformly distributed throughout the laminated body 1. The adhesive layer can be prevented from remaining undissolved. As a result, the adhesive layer can be dissolved in a shorter time, and the support plate 2 can be peeled from the wafer 3 in a shorter time. Further, in the peeling apparatus 20, since the central supply port 29 and the discharge port 30 are provided in the side surface portion of the solvent supply chamber 21, it is possible to arrange the vibration unit 27 in the central portion of the solvent supply chamber 21. . Therefore, the vibration from the vibration part 27 can be efficiently transmitted also to the vicinity of the center part of the laminated body 1, and the unmelted residue of the adhesive layer can be more effectively prevented.

  As shown in FIGS. 2 and 3, the stage 23 includes a placement portion 23 a on which the stacked body 1 is placed with the wafer 3 side down. The mounting portion 23a is composed of, for example, a porous suction portion (suction portion) 23b made of ceramic so as to suck and suck the stacked body 1, and is recessed in a curved shape from the surface of the stage 23. Formed. That is, in the cross section, the mounting portion 23a has an inclination angle θ with respect to the surface of the stage 23 of 0.5 degrees or more and 2.0 degrees or less with a point P located inside the peripheral portion of the stage 23 as a starting point. It is formed so as to be recessed in a curved shape so as to be within the range, more preferably within the range of 0.5 degree or more and 1.0 degree or less. The inclination angle θ is determined by the fact that the tops of the bumps 3a located on the outermost part of the wafer 3 are peeled off when the stacked body 1 is placed on the placement portion 23a along the shape of the placement portion 23a. An angle so as not to contact the surface facing the bump 3a of the support plate 2 restored to a flat plate shape, that is, an angle located below the surface of the stage 23, more preferably about 20 to 30 μm from the surface of the stage 23. The angle is set so as to be located on the lower side. The deepest portion of the mounting portion 23a is positioned so that the distance (depth) h from the surface of the stage 23 is within a range of 300 μm or more and 1000 μm or less so as not to damage the wafer 3. Preferably, it is located so that it may exist in the range of 300 micrometers or more and 700 micrometers or less, and it is still more preferable that it is located so that it may exist in the range of 500 micrometers or more and 650 micrometers or less. Therefore, the peripheral portion of the mounting portion 23a is lowered from the surface of the stage 23 (in a so-called slope shape) at the inclination angle θ starting from the point P in the cross section, and gradually increases as the distance from the surface of the stage 23 increases. It has a curved shape in which the inclination angle becomes “0” when the inclination angle becomes small and the distance from the surface of the stage 23 becomes the distance h. Thus, the stacked body 1 can be sucked and sucked (mounted) on the mounting portion 23a without damaging the wafer 3.

  The position of the point P from the peripheral part of the stage 23 may be determined according to the size of the stage 23 and the laminated body 1, the inclination angle θ, the distance h of the deepest part, etc., and is not particularly limited. In addition, it is preferable that the area | region (peripheral part) outside the said point P in the stage 23 is a horizontal surface so that the retention part 22 can be comprised between the solvent supply chambers 21. FIG.

  The suction part 23b of the mounting part 23a is connected to a decompression device (not shown) such as a vacuum pump so that the stacked body 1 can be sucked and adsorbed. Therefore, when the stacked body 1 is not warped, the mounting portion 23a can not only mount the stacked body 1 on the mounting portion 23a, but also the stacked body 1 is warped with the wafer 3 side outward. Even in the case, conversely, even when the stacked body 1 is warped with the wafer 3 side inward, the stacked body 1 can be mounted on the mounting portion 23a without damaging the wafer 3. Note that the suction portion 23b of the placement portion 23a may be capable of electrostatically attracting instead of sucking and attracting the stacked body 1.

  In addition, the stage 23 can adjust the size (including the depth) of the mounting portion 23a according to the size of the stacked body 1 (or the size of the bump 3a). Not). Specific examples of the adjusting mechanism include a configuration in which the stage 23 is bent by compressing and pulling the stage 23, but the configuration is not particularly limited.

  According to the peeling device 20 configured as described above, since the mounting portion 23a on which the stacked body 1 is mounted is formed so as to be recessed in a curved shape from the surface of the stage 23, after the stacked body 1 is mounted on the mounting portion 23a When the support layer 2 was peeled off by dissolving the adhesive layer using the solvent from the laminate 1, the wafer 3 placed on the placement portion 23a of the stage 23 was restored to a flat plate shape by being peeled off. A gap is formed between the support plate 2 and the support plate 2. That is, the support plate 2 can be avoided from being placed on the wafer 3 in a state where the support plate 2 is peeled from the wafer 3. Accordingly, it is possible to avoid the possibility that the bump 3 a formed on the wafer 3 is damaged by the support plate 2 in a state where the support plate 2 is peeled from the wafer 3.

[Peeling method]
A peeling method according to an embodiment of the present invention will be described below. That is, the peeling method of the support plate 2 from the laminated body 1 using the peeling apparatus 20 having the above configuration, specifically, the peeling method of peeling the support plate 2 from the wafer 3 by dissolving the adhesive layer will be described. The peeling method includes at least a supply step of supplying a solvent that dissolves the adhesive layer from at least the support plate 2 side to the laminate 1, and more preferably, a retention step of supplying and retaining the solvent on the laminate 1. It has.

  First, the stacked body 1 is placed on the placement portion 23a of the stage 23 with the wafer 3 side down (sucked and sucked). Next, after the solvent supply chamber 21 is brought into contact with the stage 23 via the dicing tape 5 (see FIG. 1), a supply process is performed.

  In the supply step and the subsequent retention step, a solvent that dissolves the adhesive layer is supplied from the central supply port 29 to the laminated body 1 to be peeled and retained on the laminated body 1. The solvent supply chamber 21 constitutes a retention part 22 so as to cover the stacked body 1 when the support plate 2 is peeled from the wafer 3. Therefore, the solvent supplied in the staying part 22 stays in the staying part 22. At this time, it is preferable to supply the solvent to the laminate 1 so that at least the side surface of the laminate 1 and the surface on the support plate 2 side are covered with the solvent. That is, when the support plate 2 is peeled from the wafer 3, the side surface of the laminated body 1 and the surface on the support plate 2 side are covered with the solvent, and the amount of the solvent is such that the laminated body 1 is immersed in the solvent. Is preferably supplied. Further, in the supply step, the inside of the staying part 22 may be in a reduced pressure state as necessary. Although the time required for the supplying step is not particularly limited, it is preferably in the range of 0.5 minute to 2 minutes and in the range of 0.5 minute to 1 minute in consideration of productivity. Is more preferable.

  When the solvent is supplied, the solvent reaches the adhesive layer from the side surface of the laminate 1, and enters the laminate 1 through the through hole 10 of the support plate 2 to reach the adhesive layer. Thereby, since a solvent osmose | permeates the adhesive layer located in the center part in the support plate 2, ie, the center part of the laminated body 1, an adhesive layer is melt | dissolved efficiently. In addition, although a solvent is normally supplied at room temperature (23 degreeC), in order to accelerate | stimulate the penetration | invasion to an adhesive layer and the melt | dissolution of an adhesive layer, temperature adjustments, such as heating, may be made | formed suitably.

  In the staying step, when the adhesive layer is dissolved by the solvent, if necessary, a vibration step of vibrating the solvent staying on the laminate 1 by the vibrating portion 27, preferably ultrasonically vibrating may be performed. Good. The vibration step may be performed after the solvent is supplied to the laminate 1 in the supply step (that is, simultaneously with the residence step), may be performed simultaneously with the supply of the solvent to the laminate 1, and May start in the middle of the supply process or in the course of the residence process. In the staying step, the inside of the staying part 22 may be in a reduced pressure state as necessary, and the solvent supply chamber 21 may be turned by the turning part 28. In addition, although the time which a residence process requires is not specifically limited, when productivity is considered, it is preferable to be in the range of 3 minutes to 7 minutes, and more preferable to be in the range of 3 minutes to 5 minutes.

  When the adhesive layer is dissolved by performing the staying step, the wafer 3 and the support plate 2 are separated from each other. That is, the support plate 2 is peeled from the wafer 3. At this time, as shown in FIG. 1, since the support plate 2 is restored to a flat plate shape by being peeled off, the wafer 3 placed on the placement portion 23 a of the stage 23 and the above-described flat plate shape are restored. A gap is formed between the support plate 2 and the support plate 2. Therefore, the peeled support plate 2 is not placed on the bump 3 a formed on the wafer 3. Further, since a gap is generated between the wafer 3 and the support plate 2, there is no possibility that the bump 3 a is damaged by the support plate 2 even if the vibration process is performed and vibration is performed, preferably ultrasonic vibration. Accordingly, the solvent and the laminate 1 can be sufficiently vibrated as compared with the conventional peeling method in which the support plate and the bump come into contact when the adhesive layer is dissolved, so that the adhesive layer is dissolved in a shorter time. be able to.

  When the support plate 2 is peeled from the wafer 3, the solvent in which the adhesive layer is dissolved is discharged from the discharge port 30 and recovered (recovery process). After the recovery step, the inside of the retention portion 22 is returned to atmospheric pressure, the solvent supply chamber 21 is separated from the stage 23, and the peeled support plate 2 is taken out using a transfer device such as a robot arm, for example, and then as necessary. Then, a new solvent is supplied onto the wafer 3 to clean the wafer 3 (cleaning process). Thereby, the adhesive layer remaining on the wafer 3 can be removed. Thereafter, the suction by suction is released, and the wafer 3 is taken out using a transfer device such as a robot arm.

  According to the peeling method having the above-described configuration, after the stacked body 1 is placed with the wafer 3 side down on the placement portion 23a of the stage 23 formed so as to be curved from the surface of the stage 23, the solvent is removed. Since the adhesive layer is dissolved and the support plate 2 is peeled off, it is possible to avoid the support plate 2 from being placed on the wafer 3 by the gap in a state where the support plate 2 is peeled off from the wafer 3. it can. Accordingly, it is possible to avoid the possibility that the bump 3 a formed on the wafer 3 is damaged by the support plate 2 in a state where the support plate 2 is peeled from the wafer 3.

<Modification of support plate (support)>
As shown in FIG. 4, the support plate 2 of the laminated body 1 that is the target of the peeling process is configured such that the non-penetrating portion 11 is formed by closing the central through-hole among all the through-holes 10. It may be.

  Here, the “non-penetrating portion” in the present invention refers to a portion (region) that is not originally formed between the through holes 10 and 10 or a portion (region) of the closed through hole itself. Instead of simply pointing, the surface of the support plate 2 includes at least one closed through hole and is surrounded by a circumscribed circle circumscribing the plurality of through holes 10 adjacent to the closed through hole. Refers to a part (region). Therefore, the “non-penetrating portion” always includes a portion (region) of the blocked through hole itself, and exists around the portion (region) of the blocked through hole itself and the closed through hole. In other words, a portion (region) where the through hole is not originally formed is formed. The “closed through-hole” included in the “non-penetrating portion” may be one, but more preferably. In addition, the “closed through hole” in the present invention does not need to be in a state in which the through hole is actually formed after the through hole is once formed. It refers to a through hole that is not formed at a position to be formed. Therefore, the “closed through-hole” indicates a portion (region) where the through-hole is not originally formed. The non-penetrating portion 11 is preferably a portion (region) surrounded by a circle having a diameter of 2 mm or more and 5 mm or less, although it depends on, for example, a combination of an adhesive compound forming an adhesive layer and a solvent.

  According to the laminated body 1 using the support plate 2 having the above-described configuration, when the retention process is performed by performing the above-described peeling method using the peeling device 20, the solvent is laminated in the through-hole 10 in the support plate 2. While the adhesive layer is dissolved by intrusion, the solvent does not enter the laminated body 1 at the non-penetrating portion 11 in the support plate 2, so that the adhesive layer is not dissolved. Therefore, at the end of the staying process, a dissolved portion and a non-dissolved portion are formed in the adhesive layer. That is, as shown in FIG. 4, most of the adhesive layer positioned below the through hole 10 of the support plate 2 is dissolved by the solvent, while the adhesive layer positioned below the non-penetrating portion 11 of the support plate 2 is The columnar (conical frustum) adhesive layer 4a remains without being dissolved by the solvent. At this time, the support plate 2 is formed on the surface of the wafer 3 even though the center portion is supported by the columnar adhesive layer 4a and most of the adhesive layer is dissolved and removed. There is no contact with the bump 3a.

  As described above, the support plate 2 having the structure in which the non-penetrating portion 11 is formed generates the columnar undissolved portion 4a in the adhesive layer, thereby dissolving the adhesive layer with the solvent and removing the support plate 2 from the wafer 3. Even in a state where the separation is possible, the undissolved portion 4a can avoid the support plate 2 from being placed on the wafer 3. Therefore, it is possible to further avoid the possibility that the bumps 3a formed on the wafer 3 are damaged by the support plate 2 in a state where the support layer 2 can be peeled from the wafer 3 by dissolving the adhesive layer. be able to.

  Since the contact area between the support plate 2 and the columnar adhesive layer 4a is sufficiently smaller than the surface of the support plate 2, the support plate 2 can be peeled without damaging the wafer 3. The wafer 3 from which the support plate 2 has been peeled is washed with a solvent in the same manner as the wafer from which the conventional support plate has been peeled to dissolve the remaining adhesive layer including the columnar adhesive layer 4a. That is, the adhesive layer remaining on the wafer 3 is removed. Thereafter, washing with water or the like may be performed as necessary.

  Examples will be shown below, and the embodiments of the present invention will be described in more detail. Of course, the present invention is not limited to the following examples, and it goes without saying that various aspects are possible in detail. Further, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims, and the present invention is also applied to the embodiments obtained by appropriately combining the disclosed technical means. It is included in the technical scope of the invention. Moreover, all the literatures described in this specification are used as reference.

[Example 1]
A stage having a mounting portion formed with a diameter of 310 mm, an inclination angle θ of 1.0 degree, and a distance (depth) h from the stage surface of 500 μm, and a solvent supply that forms a staying portion in contact with the stage Using a peeling device equipped with a chamber, a 300 mm diameter, 50 μm thick wafer, a 60 μm thick adhesive layer, a 301 mm diameter multiple support hole and a 650 μm thick support plate are laminated in this order. The peeling process which peels the said support plate from the body was performed. As the solvent, p-menthane was used. A large number of bumps having a height of 40 μm were formed on the wafer, and the bump located on the outermost part of the wafer had a distance from the outer edge of the wafer of 2.5 mm. Moreover, the outer edge part of the support plate was located 5 mm inside from the point P which is a starting point of a mounting part.

  As a result, in the state where the support plate was peeled from the wafer, a gap of about 5 μm was formed between the bump located at the outermost part of the wafer and the support plate. That is, it has been found that the use of the peeling apparatus including the stage having the above-described placement portion can avoid the support plate being placed on the wafer by the gap.

  The peeling apparatus and the peeling method according to the present invention can be widely used, for example, in a manufacturing process of a miniaturized semiconductor device.

1 Laminate 2 Support plate (support)
3 Wafer (substrate)
3a Bump 4a Columnar adhesive layer 10 Through hole 11 Non-penetrating part 20 Peeling device 21 Solvent supply chamber (chamber)
22 staying part 23 stage 23a mounting part 23b suction part (adsorption part)
26 Vibration transmission part 27 Vibration part (ultrasonic wave generation part)
θ Inclination angle

Claims (8)

A peeling device for peeling the support from a laminate comprising a substrate, an adhesive layer, and a plurality of through-holes penetrating in the thickness direction, the support supporting the substrate being laminated in this order. Because
A stage on which the laminated body is placed with the substrate side down, and a state in which the laminated body is provided so as to be detachable from the stage and covers the laminated body placed on the stage and is in contact with the stage A chamber adapted to supply a solvent for dissolving the adhesive layer to the laminate,
The said stage is formed so that the mounting part which mounts a laminated body may be depressed in the shape of a curved surface from the stage surface.   The peeling apparatus according to claim 1, wherein an inclination angle of a peripheral portion of the placement portion with respect to the stage surface is within a range of 0.5 degrees or more and 2.0 degrees or less.   3. The peeling apparatus according to claim 1, wherein the deepest portion of the placement portion is located within a range of 300 μm to 1000 μm from the stage surface.   The peeling apparatus according to any one of claims 1 to 3, wherein the stage includes an adsorption portion that adsorbs the stacked body.   The peeling apparatus according to claim 1, wherein the stage includes an adjustment mechanism that adjusts the size of the mounting portion.   The peeling apparatus according to any one of claims 1 to 5, wherein the chamber includes an ultrasonic wave generation unit that applies ultrasonic vibration to the laminate.   The said support body has a non-penetrating part formed by closing a part of through-hole in a center part, The said support body is peeled from a laminated body, It is characterized by the above-mentioned. The peeling apparatus as described in any one of 1 to 6. In this peeling method, the support is peeled off from a laminate in which a substrate, an adhesive layer, and a plurality of through holes penetrating in the thickness direction are laminated in this order. And
After placing the laminate with the substrate side down on the stage where the placement portion for placing the laminate is recessed in a curved shape from the stage surface, the solvent for dissolving the adhesive layer is at least from the support side. A peeling method characterized by being supplied to a laminate.

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