JP2021057500A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

To provide a substrate processing apparatus and a substrate processing method enabling substrate quality to be improved.SOLUTION: A substrate processing apparatus 10 according to an embodiment comprises: a table 20 that supports a processing object W including a substrate W1, a ring W2 surrounding the substrate W1, and a dicing tape W3 adhered to the lower surface of the substrate W1 and the lower surface of the ring W2; a plurality of chuck pins 23 that fix the processing object W supported by the table 20 to the table 20; a processing liquid supply unit 50 that supplies a processing liquid for processing the substrate W1 to the processing object W fixed to the table 20 by the chuck pin 23; and a vibrating unit 30 that vibrates all of the chuck pins 23 with the processing object W supplied with the processing liquid by the processing liquid supply unit 50.SELECTED DRAWING: Figure 1

Description

Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method.

In recent years, there has been a demand for further thinning and cost reduction of semiconductor devices. Therefore, semiconductor devices have been collectively manufactured on a substrate that supports the semiconductor device. As a substrate (support substrate) for supporting a semiconductor device, for example, a semiconductor wafer or a glass substrate for a liquid crystal panel is used, and various processes such as wiring formation, chip mounting, and mold encapsulation are performed on the adhesive layer of the support substrate. A semiconductor device is formed on the adhesive layer. After that, the support substrate is peeled off from the formed semiconductor device. In the step of peeling the support substrate, for example, the adhesive layer between the semiconductor device and the support substrate is deteriorated by laser irradiation, and the support substrate is peeled from the semiconductor device.

Prior to the peeling step, a dicing tape, which is an adhesive tape, is attached to the surface on the semiconductor device side opposite to the support substrate in order to finally separate the semiconductor device into individual chips. On the dicing tape to be attached, a ring for carrying or supporting the dicing tape is attached to the dicing tape so as to surround the support substrate and the semiconductor device on the dicing tape. Therefore, the central region of the adhesive surface (adhesive surface) of the dicing tape is covered by the support substrate and the semiconductor device, and the outer edge region of the adhesive surface of the dicing tape is covered by the annular ring. The annular region between the central region and the outer edge region of the adhesive surface of the dicing tape (the adhesive surface of the dicing tape between the semiconductor device and the ring) is exposed.

After the support substrate is peeled from the semiconductor device by the peeling step, only the semiconductor device is stuck on the dicing tape. Further, since the semiconductor device is formed on the support substrate, the semiconductor devices formed collectively are formed with the same outer shape as the support substrate. That is, when the semiconductor wafer is used as a support substrate, the outer shape of the semiconductor device has a disk shape similar to that of the semiconductor wafer. Hereinafter, a semiconductor device formed in a disk shape will be described as an example. Further, the semiconductor device is simply referred to as a device (or a substrate).

When the support substrate is peeled off from the device, an adhesive (for example, carbon), which is an adhesive layer, remains on the device. This makes it necessary to remove the residual adhesive from the device. In the process of removing the adhesive, for example, the ring is pressed from above by a plurality of chuck pins (fixing members), and the device is fixed to the table together with the ring and the dicing tape. Then, the device is rotated in a horizontal plane together with the dicing tape and the ring around the center of the device, a cleaning liquid such as a solvent (an example of a treatment liquid) is supplied to the vicinity of the center of the device, and the cleaning liquid supplied to the vicinity of the center of the device is supplied. Spread it over the entire surface of the device (circumferential direction) and discharge it from the device to remove the adhesive from the device.

The adhesive removed from the device is discharged from the device together with the cleaning liquid, but the discharged adhesive may adhere to the chuck pin or the adhesive surface of the dicing tape between the device and the ring. When the adhesive adheres, it separates from the chuck pin or the dicing tape and adheres to the device (board) in the transport process, the dicing process, or the like, and the device is contaminated, so that the device quality, that is, the substrate quality deteriorates.

Japanese Patent No. 6004100

An object to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving the substrate quality.

The substrate processing apparatus according to the embodiment of the present invention is
A table that supports a substrate, a ring that surrounds the substrate, a lower surface of the substrate, and a dicing tape that adheres to the lower surface of the ring, and a table that supports the object to be processed.
A plurality of chuck pins for fixing the processing object supported by the table to the table,
A processing liquid supply unit that supplies a processing liquid for processing the substrate to the processing object fixed to the table by the plurality of chuck pins.
A vibrating unit that vibrates all of the plurality of chuck pins while the processing liquid is being supplied to the processing object by the processing liquid supply unit.
To be equipped.

The substrate processing method according to the embodiment of the present invention is
A step of supporting a processing object having a substrate, a ring surrounding the substrate, and a dicing tape that adheres to the lower surface of the substrate and the lower surface of the ring by a table.
A step of fixing the object to be processed supported by the table to the table with a plurality of chuck pins, and
A step of supplying a processing liquid for processing the substrate to the processing object fixed to the table by the plurality of chuck pins by a processing liquid supply unit.
A step of vibrating all of the plurality of chuck pins by the vibrating unit while the processing liquid is being supplied to the object to be processed by the processing liquid supply unit.
Have.

According to the embodiment of the present invention, the quality of the substrate can be improved.

It is a figure which shows the schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a top view which shows a part of the substrate processing apparatus which concerns on 1st Embodiment. It is a figure for demonstrating the substrate processing process which concerns on 1st Embodiment. It is a 1st figure for demonstrating the liquid supply which concerns on 1st Embodiment. It is the first figure for demonstrating the vibration of the chuck pin which concerns on 1st Embodiment. It is a 2nd figure for demonstrating the liquid supply which concerns on 1st Embodiment. It is a 3rd figure for demonstrating the liquid supply which concerns on 1st Embodiment. It is a 2nd figure for demonstrating the vibration of the chuck pin which concerns on 1st Embodiment. It is a figure which shows the schematic structure of the substrate processing apparatus which concerns on 2nd Embodiment.

<First Embodiment>
The first embodiment will be described with reference to FIGS. 1 to 8.

(Basic configuration)
As shown in FIG. 1, the substrate processing apparatus 10 according to the first embodiment includes a table 20, a vibration unit 30, a rotation mechanism (rotation drive unit) 40, a processing liquid supply unit 50, and a liquid supply unit 60. And a control unit 70.

As shown in FIGS. 1 and 2, the processing object W has a substrate (for example, a device) W1, a ring W2, and a dicing tape W3. The substrate W1 is attached to the center of the dicing tape W3. The ring W2 is formed in an annular shape and is attached to the dicing tape W3 so as to surround the periphery of the substrate W1 on the dicing tape W3. Therefore, the central region of the adhesive surface of the dicing tape W3 is covered by the substrate W1, and the outer edge region of the adhesive surface of the dicing tape W3 is covered by the annular ring W2. Therefore, the annular region between the central region and the outer edge region of the adhesive surface of the dicing tape W3, that is, the upper surface of the dicing tape W3 between the substrate W1 and the ring W2 is exposed.

The table 20 has a main body 21, a support 22, and a plurality of chuck pins 23. The table 20 is surrounded by a cup (not shown), is positioned substantially in the center of the cup, and is rotatably provided on the rotation mechanism 40 in a horizontal plane. The table 20 is called, for example, a spin table.

The main body 21 is formed in a convex shape whose center rises in a columnar shape. The upper surface of the convex portion of the main body 21 supports the substrate W1 in a state of facing the lower surface of the substrate W1 of the object to be processed W via the dicing tape W3. The support 22 is formed in an annular shape, and is provided on an annular flat portion of the main body 21 so as to surround a convex portion (protruding portion) of the main body 21. The support 22 supports the ring W2 in a state of facing the lower surface of the ring W2 of the object W to be processed via the dicing tape W3. Each chuck pin 23 is provided on an annular flat portion of the main body 21 so as to be eccentrically rotatable. Each of these chuck pins 23 rotates eccentrically in synchronization with each other to push the outer peripheral surface of the ring W2 of the processing object W inward and hold the processing object W in a horizontal state. At this time, the center of the object W to be processed is positioned on the rotation axis of the table 20.

In this table 20, the object W to be processed is supported by the main body 21 and the support 22 and fixed to the main body 21 and the support 22 by each chuck pin 23, and the height of the upper surface of the ring W2 of the object W to be processed is the substrate. The object W to be processed is supported so as to be lower than the height of the upper surface of W1 (for example, several mm lower than about 2 mm).

The vibrating unit 30 has a plurality of oscillators 31 and a plurality of covers 32. Each oscillator 31 is provided on each upper portion of each chuck pin 23. As these oscillators 31, for example, a MEMS (microelectromechanical system) oscillator, a crystal oscillator, or a piezoelectric element is used. Each cover 32 is individually positioned on the upper portion of each chuck pin 23, and is individually provided on each chuck pin 23 so as to cover each oscillator 31 located on the upper portion of each chuck pin 23.

The rotation mechanism 40 is provided so as to support the table 20, and is configured to rotate the table 20 in a horizontal plane (an example of a plane). The rotation mechanism 40 has a rotation shaft 41 and a motor 42. One end of the rotating shaft 41 is connected to the lower center of the table 20, and the other end of the rotating shaft 41 is connected to the motor 42. The motor 42 rotates the rotating shaft 41. The rotation mechanism 40 rotates the table 20 in a horizontal plane via the rotation shaft 41 by driving the motor 42.

The processing liquid supply unit 50 has a nozzle 51. The processing liquid supply unit 50 positions the nozzle 51 above the center of the substrate W1 of the processing object W on the table 20 (for example, directly above the center of the substrate W1), and the processing object W on the table 20. A first treatment liquid (for example, a solvent such as p-menthane or cyclopentanone) or a second treatment liquid (for example, IPA: isopropyl alcohol) is supplied from the nozzle 51 near the center of the substrate W1. The first treatment liquid is, for example, a liquid incompatible with DIW (ultrapure water), and is a liquid for peeling the adhesive remaining on the substrate W1 from the substrate W1.

The nozzle 51 is formed so as to be movable in the horizontal direction along the processing object W on the table 20 above the table 20 by, for example, a nozzle moving mechanism (not shown). As the nozzle moving mechanism, for example, a swing mechanism having an arm, a linear guide, or the like is used. The nozzle 51 faces the vicinity of the center of the object W to be processed on the table 20, and discharges the processing liquid toward the center thereof. Two types of processing liquids are individually supplied to the nozzle 51 from two tanks (not shown) outside the substrate processing apparatus 10. The discharge amount of the first processing liquid discharged from the nozzle 51 is changed by adjusting the opening degree of the adjusting valve 51a, and the discharge amount of the second processing liquid discharged from the nozzle 51 is changed by adjusting the opening degree of the adjusting valve 51b. Will be done.

The liquid supply unit 60 has a first nozzle 61 and a second nozzle 62. The liquid supply unit 60 positions the first nozzle 61 above the upper surface of the ring W2 of the object W to be processed on the table 20 (for example, directly above the upper surface of the ring W2), and the first nozzle 61 is placed on the upper surface of the ring W2. A liquid (for example, DIW) is supplied from the nozzle 61. Further, the liquid supply unit 60 positions the second nozzle 62 above the outer peripheral end of the substrate W1 of the object W to be processed on the table 20 (for example, directly above the outer peripheral surface of the substrate W1), and the outer periphery of the substrate W1. A liquid (for example, DIW) is supplied to the end portion from the second nozzle 62. This liquid is immiscible with the first treatment liquid and has a higher specific gravity than the first treatment liquid (higher density than the first treatment liquid).

The first nozzle 61 and the second nozzle 62 are formed, for example, by a nozzle moving mechanism (not shown) so as to be movable above the table 20 in the horizontal direction along the processing object W on the table 20. .. As the nozzle moving mechanism, for example, a swing mechanism having an arm, a linear guide, or the like is used. The first nozzle 61 faces the upper surface of the ring W2 of the object W to be processed on the table 20, and discharges the liquid toward the upper surface thereof. The second nozzle 62 faces the outer peripheral end of the substrate W1 of the object W to be processed on the table 20, and discharges the liquid toward the outer peripheral end. The horizontal separation distance between the first nozzle 61 and the second nozzle 62 is, for example, about 200 mm. Liquids are supplied to the first nozzle 61 and the second nozzle 62 from a tank (not shown) outside the substrate processing apparatus 10. The discharge amount of the liquid discharged from the first nozzle 61 is changed by adjusting the opening degree of the adjusting valve 61a, and the discharge amount of the liquid discharged from the second nozzle 62 is changed by adjusting the opening degree of the adjusting valve 62a. ..

The control unit 70 includes a microprocessor that centrally controls each unit, and a storage unit (all not shown) that stores substrate processing information and various programs related to substrate processing. Based on the substrate processing information and various programs, the control unit 70 holds the object to be processed by each chuck pin 23 of the table 20, vibrates by the vibrating unit 30, rotates the table 20 by the rotating mechanism 40, and supplies the processing liquid. The processing liquid supply operation by the unit 50, the liquid supply operation by the liquid supply unit 60, and the like are controlled. For example, each oscillator 31 and the motor 42 are electrically connected to the control unit 70, and their drive is controlled by the control unit 70. For each oscillator 31, for example, by using a slip ring for the rotating shaft 41 of the table 20, even if the table 20 is rotating, it is possible to electrically connect each oscillator 31 to the control unit 70. It has become. Further, each of the regulating valves 51a, 51b, 61a, 62a is, for example, an electromagnetic valve, which is electrically connected to the control unit 70, and its drive is controlled by the control unit 70.

(Substrate processing process)
Next, the flow of the substrate processing process performed by the substrate processing apparatus 10 described above will be described. This substrate processing step is a step of removing the adhesive remaining on the substrate W1 of the object W to be processed. The following various numerical values are merely examples.

As shown in FIG. 3, for example, the steps 1 to 6 are continuously executed. A solvent (an example of a cleaning liquid) is used as the first treatment liquid, IPA is used as the second treatment liquid, and DIW is used as the liquid. The object W to be processed is fixed to the table 20 by each chuck pin 23, and the table 20 is rotating during the substrate processing process. The rotation speed and processing time of the table 20 are changed by the control unit 70. Further, the individual discharge amounts of the solvent, IPA, and DIW are changed by controlling the control valves 51a, 51b, 61a, and 62a of the control valves 51a, 51b, 61a, and 62a. Further, each oscillator 31 is controlled by the control unit 70. For example, the individual frequencies of each oscillator 31 are the same and constant.

In step 1, DIW is discharged from the first nozzle 61 and supplied to the upper surface of the ring W2 of the processing object W on the rotating table 20. In this step 1, the discharge amount of DIW discharged from the first nozzle 61 is 380 ml / min, the rotation speed of the table 20 (first rotation speed) is 20 rpm, and the processing time (discharge time) is 10 s. Is.

The discharge amount of DIW is an amount that can be applied to the upper part of the chuck pin 23 and the periphery of the chuck pin 23, and is preferably an amount that is not supplied onto the substrate W1. However, for example, if only the DIW is supplied from the first nozzle 61, the adhesive may adhere to the chuck pin 23 even when the chuck pin 23 is covered with the DIW, and the DIW coating is insufficient. The adhesive may adhere to the chuck pin 23. Therefore, in step 2 described later, a vibration operation by each oscillator 31 is required. The rotation speed (rotation speed) of the table 20 is set to a rotation speed at which the DIW can be held in a liquid film state. The DIW reaches the upper surface of the ring W2 of the processing object W on the rotating table 20 and spreads on the upper surface of the ring W2. At this time, the ring W2 is rotating, and the DIW supplied to the upper surface of the ring W2 spreads to the outside and the inside of the ring W2. At this time, the rotation speed of the table 20 per unit time, that is, the rotation speed of the ring W2 of the object W to be processed per unit time (first rotation speed) is the rotation in which the centrifugal force on the upper surface of the ring W2 is weak. Since it is a number, the DIW discharged from the first nozzle 61 and reaching the upper surface of the ring W2 of the processing object W is between the substrate W1 and the ring W2 of the processing object W supported by the rotating table 20. It is set to flow to. Further, the processing time is set to the time required for the liquid to be applied between the substrate W1 and the ring W2 according to the set discharge amount of DIW. For example, the processing time is 10 s when the set discharge amount of DIW is 380 ml / min. The discharge amount of DIW, the rotation speed of the table 20, and the processing time are determined and set in advance by experiments and the like.

In step 1, as shown in FIG. 4, the DIW discharged from the first nozzle 61 (indicated by the cross-hatched filled area in FIG. 4) is the ring W2 of the processing object W on the rotating table 20. It reaches the upper surface and spreads to the outside of the ring W2 and the inside of the ring W2 (on the substrate W1 side). Therefore, the DIW spreading inside the ring W2 flows between the substrate W1 and the ring W2, and accumulates in the annular space surrounded by the substrate W1, the ring W2, and the dicing tape W3. As a result, a DIW liquid film is formed on the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2, and a DIW liquid film is also formed on the upper surface of the ring W2.

In step 2, each oscillator 31 starts to vibrate. As shown in FIG. 5, for example, four oscillators 31 out of the eight chuck pins 23 vibrate (thick lines in FIG. 5 indicate vibration). Specifically, if a pair of oscillators 31 facing each other with the center of the substrate W1 in between are made into one set, the two sets of oscillators 31 vibrate, and after a few seconds, the other two sets vibrate, and after a few seconds again, the other. Repeatedly vibrating the two sets. Eventually, all the oscillators 31 vibrated. The vibration generated by each oscillator 31 is also transmitted to each chuck pin 23 and the liquid film of DIW. Next, in a state where the two sets of oscillators 31 are vibrating, in step 2 (see FIG. 3), the solvent is discharged from the nozzle 51 and is near the center of the substrate W1 of the processing object W on the rotating table 20. The DIW is also discharged from the first nozzle 61 (continued from step 1) and is supplied to the upper surface of the ring W2 of the processing object W on the rotating table 20. In this step 2, the discharge amount of DIW discharged from the first nozzle 61 is 380 ml / min, the rotation speed of the table 20 (first rotation speed) is 20 rpm, and the processing time is 240 s. The amount of the solvent discharged from the nozzle 51 is 480 ml / min (not shown). The vibration of each oscillator 31 starts before the solvent is supplied from the nozzle 51. However, the solvent, which is the first treatment liquid, peels the adhesive from the substrate W1 and drives each oscillator 31 before the peeled adhesive flows to the outer periphery (chuck pin 23) of the substrate W1. Just start.

Since the rotation speed (rotation speed) of the table 20 is set to a rotation speed at which the solvent can be held on the substrate W1 in the state of a liquid film, the adhesive can easily react with the solvent. The treatment time is set to the time required for the solvent to dissolve the laser absorption layer described later. The discharge amount of the solvent is set to a supply amount that can sufficiently dissolve the laser absorption layer within the above-mentioned set processing time. The rotation speed, processing time, and solvent discharge amount of the table 20 are determined and set in advance by experiments and the like.

In step 2, as shown in FIG. 6, the solvent discharged from the nozzle 51 is processed on the rotating table 20 in a state where the liquid film of DIW is present between the substrate W1 and the ring W2 and on the upper surface of the ring W2. It reaches the vicinity of the center of the substrate W1 of the object W, and spreads over the entire upper surface of the substrate W1 due to the centrifugal force due to the rotation of the object W to be processed. A liquid film of a solvent is formed on the upper surface of the substrate W1, and an adhesive (indicated by a thick black line on the substrate W1 in FIG. 4) is gradually melted by the solvent from the substrate W1. Step 2 is a step for melting the adhesive on the substrate W1. The adhesive melts and peels off from the substrate W1. The adhesive peeled off from the substrate W1 floats on the liquid film of the solvent on the substrate W1. The adhesive on the substrate W1 is peeled off first from the portion where the melting progresses quickly, and floats on the liquid film of the solvent on the substrate W1.

Here, for example, the adhesive is configured by laminating a laser absorption layer on the substrate W1 and laminating a laser reaction layer on the laser absorption layer on the substrate W1. The laser absorption layer on the substrate W1 side is dissolved by the solvent, and the adhesive is peeled off from the substrate W1 and removed. Before the peeling step of the support substrate, the device (substrate W1) is supported by the support substrate via an adhesive layer. This adhesive layer has a two-layer structure (laser reaction layer and laser absorption layer). At the time of peeling from the support substrate, when the laser is irradiated from the support substrate side, the reaction layer is destroyed by the laser beam. The laser light is absorbed by the laser absorption layer so as not to affect the device side. When the laser reaction layer is destroyed, the support substrate can be peeled off. The destroyed laser reaction layer and laser absorption layer, that is, the adhesive layer remain on the device side. The device is in a state of being supported by the dicing tape W3 with the upper part (laser reaction layer) of the broken adhesive layer exposed on the upper surface. The solvent, which is the first treatment liquid, dissolves the laser absorption layer in the two adhesive layers and removes the laser reaction layer formed on the laser absorption layer together.

Further, in step 2, the DIW discharged from the first nozzle 61 proceeds toward the upper surface of the ring W2 of the processing object W on the rotating table 20, but becomes a solvent flowing from the upper surface of the substrate W1. It reaches the upper surface of the ring W2 and spreads outside and inside the ring W2 without mixing. DIW is a liquid that is immiscible with a solvent and has a higher specific gravity than the solvent. The DIW spreading inside the object W to be processed flows between the substrate W1 and the ring W2, and accumulates in the space surrounded by the substrate W1, the ring W2, and the dicing tape W3. As a result, the DIW liquid film is maintained between the substrate W1 and the ring W2, and the DIW liquid film is also maintained around the ring W2. At this time, each oscillator 31 vibrates in groups, and the vibration caused by these oscillators 31 is transmitted to each chuck pin 23, the DIW liquid film, and the solvent liquid film. As described above, DIW is immiscible with the solvent and has a higher specific gravity than the solvent. Therefore, when the solvent discharged from the upper surface of the substrate W1 flows into the DIW formed between the substrate W1 and the ring W2 from the upper surface of the substrate W1, the liquid of the DIW formed between the substrate W1 and the ring W2. It does not mix with the membrane and flows over the DIW liquid membrane (see FIG. 6).

Normally, in step 2, the adhesive removed from the substrate W1 is suspended and stays in the liquid film of the solvent on the substrate W1, but in the floating adhesive, the substrate W1 is suspended together with the solvent by the flow of the solvent. Some are discharged from. That is, a part of the adhesive floating on the solvent liquid film on the substrate W1 flows and vibrates together with the solvent flowing between the substrate W1 and the ring W2 and on the DIW liquid film existing on the upper surface of the ring W2. It is discharged from the processing object W so as to avoid the two sets of chuck pins 23. At this time, in a state where the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 is covered with the liquid film of DIW, the adhesive is discharged from the object W to be treated together with the solvent, so that the adhesive is discharged from the substrate W1. And it is possible to prevent the dicing tape W3 between the rings W2 from adhering to the adhesive surface. Since the DIW covers the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 and the DIW is immiscible with the solvent and has a large specific gravity, the adhesive flowing with the solvent is the substrate W1 and the ring W2. It flows on the liquid film of DIW between. Therefore, it is possible to prevent the adhesive from adhering to the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2. Further, by forming the DIW liquid film around the chuck pin 23, the adhesive flowing together with the solvent flows on the DIW liquid film around the chuck pin 23, so that the adhesive adheres to the chuck pin 23. Can be suppressed.

Further, the adhesive removed from the substrate W1 flows together with the solvent, but the waves generated by the two sets of vibrating chuck pins 23 keep them away from the two sets of vibrating chuck pins 23 and avoid those chuck pins 23. Since it is discharged from the object W to be treated together with the solvent, it is possible to prevent the adhesive from adhering to the chuck pin 23. Even if the adhesive removed from the substrate W1 adheres to the non-vibrating chuck pin 23, when the chuck pin 23 vibrates, the adhered adhesive separates from the chuck pin 23 and the object W to be treated together with the solvent. Since it is discharged from the chuck pin 23, it is possible to prevent the adhesive from continuing to adhere to the chuck pin 23.

Further, the table 20 supports the object W to be processed at a position where the height of the upper surface of the ring W2 is lower than the height of the upper surface of the substrate W1. As a result, the adhesive removed from the substrate W1 is prevented from being caught by the ring W2 and remaining, so that the discharge efficiency of the adhesive can be improved. When the table 20 supports the object W to be processed at a position where the height of the upper surface of the ring W2 is equal to or higher than the height of the upper surface of the substrate W1, the adhesive removed from the substrate W1 is caught by the ring W2 and remains. Sometimes.

In step 3, as shown in FIG. 7, each oscillator 31 vibrates one by one (the thick line in FIG. 7 indicates vibration). Specifically, one oscillator 31 vibrates, and after a few seconds, the other oscillator 31 vibrates, and after a few seconds, the other oscillator 31 vibrates repeatedly. For example, each oscillator 31 vibrates sequentially in the circumferential direction of the substrate W1 one by one every predetermined time of several seconds (the reason why the vibration operation of each oscillator 31 changes from step 2 to step S3 will be described later. ). Eventually, all the oscillators 31 vibrated. Next, in a state where one oscillator 31 is vibrating, in step 3 (see FIG. 3), the solvent is discharged from the nozzle 51 (continued from step 2), and the substrate of the processing object W on the rotating table 20 is rotated. It is supplied near the center of W1, the DIW is discharged from the first nozzle 61 (continued from step 2), is supplied to the upper surface of the ring W2 of the processing object W on the rotating table 20, and the DIW is further supplied to the second surface. It is discharged from the nozzle 62 of the above and is supplied to the outer peripheral end portion of the substrate W1 of the processing object W on the rotating table 20. In this step 3, the discharge amount of DIW discharged from the first nozzle 61 is 380 ml / min, the discharge amount of DIW discharged from the second nozzle 62 is 200 ml / min, and the rotation speed of the table 20. The (second rotation speed) is 400 rpm, and the processing time (discharge time) is 60 s. The amount of the solvent discharged from the nozzle 51 is 480 ml / min (not shown).

The discharge amount of DIW is set to a discharge amount that can cover the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 when the rotation speed of the table 20 is changed to the second rotation speed. The rotation speed (rotation speed) of the table 20 is set to a speed at which the adhesive floating on the substrate W1 can be discharged to the outside of the substrate W1. The processing time is set to a time during which all the adhesive is discharged from the substrate W1 together with the set rotation speed of the table 20. The discharge amount of DIW, the rotation speed of the table 20, and the processing time are determined and set in advance by experiments and the like.

In step 3, as shown in FIG. 8, a DIW liquid film continues to be formed between the substrate W1 and the ring W2 of the object W to be processed, and a solvent liquid film continues to be formed on the upper surface of the substrate W1. .. The rotation speed of the table 20 increases (20 → 400 rpm), and the adhesive floating on the solvent liquid film on the object W to be treated is the DIW liquid film existing between the substrate W1 and the ring W2 and on the upper surface of the ring W2. It flows together with the solvent flowing above and flows down from the object W to be processed so as to avoid a single chuck pin 23 that vibrates. Step 3 is a step for discharging the adhesive that is melted in step 2 and floats in the solvent on the substrate W1 from the object W to be processed.

In step 3, the supply of the solvent by the nozzle 51 and the supply of DIW by the first nozzle 61 are the same as in step 2 described above, but in addition, the DIW is supplied by the second nozzle 62. .. The DIW discharged from the second nozzle 62 reaches the outer peripheral end of the substrate W1 of the processing object W on the table 20 without being mixed with the solvent flowing from the upper surface of the substrate W1, and the substrate W1 and the ring. It flows between the W2 and collects in the space surrounded by the substrate W1, the ring W2 and the dicing tape W3. When the rotation speed of the table 20 increases (20 → 400 rpm), centrifugal force acts to make it difficult for the DIW discharged from the first nozzle 61 to flow between the substrate W1 and the ring W2, and the exposed surface of the dicing tape W3 (20 → 400 rpm). The liquid film formed on the adhesive surface) becomes thinner. In addition, the liquid film is completely absent on a part of the exposed surface. However, the DIW discharged from the second nozzle 62 is supplied between the substrate W1 and the ring W2, and the thickness (film thickness) of the DIW liquid film between the substrate W1 and the ring W2 is maintained, so that the solvent is used. The adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 is surely covered with the liquid film of DIW during the supply of the dicing tape W3. As a result, even if the rotation speed of the table 20 is increased, the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 is covered with the liquid film of DIW. As a result, the adhesive floating on the solvent liquid film on the substrate W1 flows together with the solvent flowing between the substrate W1 substrate W1 and the ring W2 and on the DIW liquid film existing on the upper surface of the ring W2, and the object to be treated. The adhesive is discharged from W together with the solvent. Therefore, it is possible to prevent the adhesive removed from the substrate W1 from adhering to the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2.

As described above, the DIW liquid film becomes thin and the liquid film disappears only by the supply by the first nozzle 61. Therefore, the DIW liquid film is further assisted by the second nozzle 62 to assist the DIW. Try to maintain the formation of the liquid film. Further, the second nozzle 62 discharges DIW toward the outer peripheral end of the substrate W1 of the object W to be processed, so that the DIW liquid film is formed between the substrate W1 and the ring W2 in consideration of the influence of centrifugal force. Is made possible. Even if DIW is supplied to the upper surface of the ring W2 from the second nozzle 62, the centrifugal force increases as the rotation speed becomes the second rotation speed, so that the DIW does not flow inside the ring W2 and is discharged to the outside. It ends up. Therefore, the second nozzle 62 supplies DIW to the outer peripheral end portion of the substrate W1, and the DIW flows on the adhesive surface of the dicing tape between the substrate W1 and the ring W2 located outside the outer peripheral end portion. A DIW liquid film is formed there. The solvent (first treatment liquid) is also supplied in step 3, and the supply of the solvent is stopped in step 4.

Further, in order to discharge the adhesive from the object W to be processed, the rotation speed of the table 20 is increased from step 2 (20 → 400 rpm). As a result, the centrifugal force on the object W to be treated becomes stronger and the discharge of the adhesive from the object W to be treated is promoted, so that the discharge performance (the discharge performance of the adhesive) for discharging the adhesive flowing with the solvent is improved. Can be made to. That is, in step 2, a liquid film of the solvent is formed on the substrate W1, the adhesive of the substrate W1 is melted and suspended in the liquid film of the solvent, and in step 3, the number of rotations of the table 20 is increased to bond the adhesive floating in the solvent. The object is discharged together with the solvent from the object W to be treated. By increasing the rotation speed of the table 20, it is possible to improve the discharge performance of the adhesive. Since the discharge performance of the adhesive is improved in this way, it is possible to prevent the adhesive removed from the substrate W1 from adhering to the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 and each chuck pin 23. .. That is, by increasing the rotation speed (rotational speed) of the substrate W1, a centrifugal force is generated, and the adhesive floating on the surface of the substrate W1 is discharged to the outside of the substrate W1 by the centrifugal force. As a result, the adhesive can be removed from the surface of the substrate W1. Even when the rotation speed of the substrate W1 is increased, the solvent is continuously supplied to the center of the substrate W1. This is because the liquid film on the surface of the substrate W1 becomes thin due to centrifugal force, and the adhesive peeled off from the surface of the substrate W1 is prevented from adhering to the surface of the substrate W1 again. Further, it also assists the discharge performance of discharging the adhesive from the substrate W1.

Further, when the rotation speed of the table 20 increases (20 → 400 rpm), the processing target W on the table 20 is fixed to the table 20 by each chuck pin 23, as compared with the case where the rotation speed of the table 20 is low. Power (holding power) is required. Therefore, when there is a possibility that the fixing force of each chuck pin 23 becomes insufficient, the number of chuck pins 23 to be vibrated among all the chuck pins 23 is reduced according to the increase in the rotation speed of the table 20 ( 4 → 1 piece). As a result, even if the rotation speed of the table 20 is increased, it is possible to prevent the adhesive removed from the substrate W1 from adhering to the chuck pin 23 while maintaining the fixing force for fixing the object W to be processed.

In step 4, each oscillator 31 stops vibrating, and only the IPA is supplied to the vicinity of the center of the substrate W1 of the processing object W on the table 20 rotating from the nozzle 51. In this step 4, the rotation speed of the table 20 is 400 rpm, and the processing time (discharge time) is 60 s. The amount of IPA supplied from the nozzle 51 is 200 ml / min (not shown).

In step 4, IPA is supplied to remove the solvent remaining on the substrate W1. In order to discharge the solvent, it is preferable to use a liquid that is miscible with the solvent and has high volatility. The rotation speed (rotation speed) of the table 20 is set to a speed at which the processing liquid remaining on the substrate W1 can be discharged to the outside of the substrate W1. The processing time is set to a time at which all the residual solvent disappears from the substrate W1 together with the set rotation speed of the table 20. The rotation speed and processing time of the table 20 are determined and set in advance by an experiment or the like.

In step 5, drying is performed by high-speed rotation in a state where all the liquid is not supplied. In this step 5, the rotation speed of the table 20 is 1000 rpm, and the processing time is 50 s. The rotation speed and processing time required for the substrate W1 to dry are determined and set in advance by experiments and the like.

In step 6, drying is stopped by high-speed rotation, so that the rotation speed is slowed down in the absence of all liquid supply. In this step 6, the rotation speed of the table 20 is 50 rpm, and the processing time is 10 s.

In the above-mentioned substrate processing step, in step 2 and step 3, each oscillator 31 vibrates in a state where the solvent is supplied to the upper surface of the substrate W1 of the processing object W on the table 20 rotated by the rotating mechanism 40. .. That is, since all the vibrators 31 vibrate while the solvent is being supplied, all the chuck pins 23 vibrate. The adhesive removed from the substrate W1 flows together with the solvent, but the wave generated by the vibrating chuck pin 23 keeps it away from the vibrating chuck pin 23 and avoids the vibrating chuck pin 23 from the processing object W together with the solvent. It is discharged. As a result, the adhesive is prevented from adhering to the chuck pin 23. Further, even if the adhesive removed from the substrate W1 adheres to the non-vibrating chuck pin 23, when the chuck pin 23 vibrates, the adhered adhesive separates from the chuck pin 23 and the object W to be treated together with the solvent. Is discharged from. As a result, it is possible to prevent the adhesive from continuing to adhere to the chuck pin 23. Therefore, it is possible to improve the quality of the substrate because the adhesive adhering to the chuck pin 23 is prevented from being separated from the chuck pin 23 and adhering to the substrate W1 in the conveying process or the like and contaminating the substrate W1. For example, when the adhesive adheres to the chuck pin 23, the untreated object W that has been conveyed next is held by the contaminated chuck pin 23. As a result, the adhesive adheres to the ring W2, and if the treatment proceeds as it is, it may affect the substrate W1 in the transport process, the dicing process, or the like.

Further, in step 2, the first nozzle 61 discharges DIW toward the upper surface of the ring W2 of the processing object W on the table 20 rotated by the rotation mechanism 40, and the substrate W1 and the ring W2 of the processing object W are discharged. DIW is supplied between and. As a result, the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 and the upper surface of the ring W2 are covered with the liquid film of DIW. In this state, the nozzle 51 discharges the solvent toward the center of the substrate W1 of the processing object W on the table 20 rotated by the rotation mechanism 40. Further, in step 3, when the rotation speed of the table 20 increases, the second nozzle 62 discharges DIW toward the outer peripheral end of the substrate W1 of the processing object W on the table 20 rotated by the rotation mechanism 40. , DIW is supplied between the substrate W1 and the ring W2 of the object W to be processed. As a result, even if the rotation speed of the table 20 increases to, for example, 100 rpm or more (high-speed rotation) and the thickness of the DIW liquid film between the substrate W1 and the ring W2 becomes thin, between the substrate W1 and the ring W2. DIW is supplied and the thickness of the DIW liquid film between the substrate W1 and the ring W2 is maintained. Therefore, the state in which the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 is covered with the liquid film of DIW is surely maintained.

In this way, during the supply of the solvent, the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 and the upper surface of the ring W2 are surely covered with the liquid film of DIW. As a result, even if the adhesive removed from the substrate W1 is discharged from the substrate W1 together with the solvent, it is suppressed from adhering to the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 and the upper surface of the ring W2. Therefore, the adhesive adhering to the adhesive surface of the dicing tape W3 and the upper surface of the ring W2 separates from the dicing tape W3 and the ring W2 and adheres to the substrate W1 in a transport step or a dicing step (for example, a post-process), and the substrate W1 becomes Since contamination is suppressed, the quality of the substrate can be improved.

Here, for example, when the first nozzle 61 supplies the outer peripheral end portion of the substrate W1, the DIW spreads from the end surface side of the substrate W1 toward the center. That is, at the first rotation speed, the centrifugal force is weak, so that the performance of discharging to the outer periphery of the substrate W1 does not appear. Therefore, when the DIW spreads toward the center of the substrate W1, the solvent supplied to the center of the substrate W1 in step 2 is prevented from spreading to the outer periphery of the substrate W1, and the solvent reacts with the adhesive on the outer periphery of the substrate W1. You will not be able to. As described above, the DIW and the solvent which is the first treatment liquid are immiscible, and the DIW has a higher specific gravity than the solvent which is the first treatment liquid. Therefore, when the DIW spreads from the outer peripheral edge of the substrate W1 toward the center, the solvent supplied from the center of the substrate W1 flows on the DIW in the vicinity of the outer periphery of the substrate W1 without being mixed with the DIW. .. That is, it becomes difficult for the solvent to come into contact with the adhesive on the substrate W1 in the vicinity of the outer periphery of the substrate W1, and the solvent cannot be supplied to the adhesive on the substrate W1. That is, the reason why the DIW supply position is changed according to the rotation speed of the table 20 is that, as described above, the solvent, which is the first treatment liquid supplied on the substrate W1, is not hindered by the DIW. This is to spread to the outer periphery of the substrate W1 to ensure peeling of the adhesive on the substrate W1 and to suppress adhesion of the adhesive to the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2.

As described above, according to the first embodiment, each chuck is supplied by the vibrating unit 30 in a state where the first processing liquid (for example, a solvent) is supplied to the processing object W by the processing liquid supply unit 50. Vibrate all of the pins 23. The adhesive removed from the substrate W1 flows together with the first treatment liquid, but is discharged from the processing object W together with the first treatment liquid so as to avoid the vibrating chuck pin 23 due to the wave generated by the vibrating chuck pin 23. Therefore, it is possible to prevent the adhesive from adhering to the chuck pin 23. Therefore, it is possible to improve the quality of the substrate because the adhesive adhering to the chuck pin 23 is prevented from being separated from the chuck pin 23 and adhering to the substrate W1 in the conveying process or the like and contaminating the substrate W1.

Further, the vibrating unit 30 changes the number of chuck pins 23 to be vibrated among the chuck pins 23 according to the rotation speed of the table 20. As a result, it becomes possible to adjust the fixing force for fixing the object W to be processed to the table 20 by each chuck pin 23 according to the increase or decrease of the rotation speed of the table 20. For example, when increasing the rotation speed of the table 20, the number of chuck pins 23 to be vibrated is reduced in order to secure a fixing force for fixing the object W to be processed to the table 20. On the other hand, when lowering the rotation speed of the table 20, the number of chuck pins 23 to be vibrated is increased within a range in which the required fixing force can be secured. In this way, it is possible to prevent the adhesive removed from the substrate W1 from adhering to the chuck pin 23 while ensuring the fixing force for fixing the object W to be processed to the table 20.

Further, by covering each oscillator 31 with each cover 32, it is possible to prevent each oscillator 31 from being exposed, and it is possible to prevent each oscillator 31 from being contaminated by a treatment liquid or the like. .. As a result, it is possible to prevent the substrate W1 from being contaminated due to the contamination of the vibrator 31, so that the quality of the substrate can be reliably improved.

Further, according to the first embodiment, the processing object W is supported by the table 20, the table 20 is rotated by the rotation mechanism 40, and the processing object supported by the table 20 is supported according to the number of rotations of the table 20. A first treatment liquid that is immiscible with the first treatment liquid (for example, a solvent) toward the upper surface of the ring W2 of the object W or the outer peripheral end of the substrate W1 of the processing object W supported by the table 20. A liquid having a higher specific gravity (for example, DIW) is discharged, the liquid is supplied between the substrate W1 and the ring W2 of the object W to be processed, and the liquid is between the substrate W1 and the ring W2 of the object W to be processed. In the supplied state, the processing liquid is supplied to the upper surface of the substrate W1 of the processing object W supported by the rotating table 20.

That is, a liquid that is not mixed with the first treatment liquid and has a higher specific gravity than that of the first treatment liquid flows between the substrate W1 and the ring W2, and the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 is DIW. Covered by a liquid film. Therefore, the adhesive removed from the substrate W1 is discharged from the processing object W together with the first processing liquid flowing between the substrates W1 and the ring W2 and on the liquid film of DIW existing on the upper surface of the ring W2. Therefore, at that time, it is possible to prevent the dicing tape W3 from adhering to the adhesive surface between the substrate W1 and the ring W2. Therefore, the adhesive adhering to the adhesive surface of the dicing tape W3 is prevented from being separated from the dicing tape W3 and adhering to the substrate W1 in the transport step, the dicing step, etc., and the substrate W1 is prevented from being contaminated. It can be definitely improved.

Further, the table 20 supports the object W to be processed at a position where the height of the upper surface of the ring W2 is lower than the height of the upper surface of the substrate W1, so that the discharge performance of the adhesive can be improved. The upper surface of the ring W2 can be covered with a liquid film. As a result, the adhesive removed from the substrate W1 is surely suppressed from adhering to the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 and the upper surface of the ring W2. Therefore, the adhesive adhering to the adhesive surface of the dicing tape W3 and the upper surface of the ring W2 separates from the dicing tape W3 and the ring W2 and adheres to the substrate W1 during transportation or in a post-process such as a dicing step, and the substrate W1 is contaminated. Since the dicing is surely suppressed, the substrate quality can be improved more reliably.

Further, DIW is supplied by the second nozzle 62. Since the DIW liquid film becomes thin and the liquid film disappears only by the supply by the first nozzle 61, the DIW liquid film is maintained by further assisting the liquid amount by the second nozzle 62. .. Further, the second nozzle 62 discharges DIW toward the outer peripheral end of the substrate W1 of the object W to be processed, so that the DIW liquid is between the substrate W1 and the ring W2 in consideration of the influence of centrifugal force. Form a film. As a result, the thickness (thickness) of the liquid film of DIW between the substrate W1 and the ring W2 is maintained, so that the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 is of DIW during the supply of the solvent. It is surely covered by the liquid film. As a result, even if the rotation speed of the table 20 is increased, the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2 is covered with the liquid film of DIW. As a result, the adhesive floating on the solvent liquid film on the substrate W1 flows together with the solvent flowing between the substrate W1 substrate W1 and the ring W2 and on the DIW liquid film existing on the upper surface of the ring W2, and the object to be treated. The adhesive is discharged from W together with the solvent. Therefore, it is possible to prevent the adhesive removed from the substrate W1 from adhering to the adhesive surface of the dicing tape W3 between the substrate W1 and the ring W2.

<Second embodiment>
The second embodiment will be described with reference to FIG. In the second embodiment, the difference (oscillator arrangement) from the first embodiment will be described, and other description will be omitted.

As shown in FIG. 9, each oscillator 31 according to the second embodiment is built in the upper part of each chuck pin 23. As a result, each oscillator 31 is not exposed, and each cover 32 according to the first embodiment becomes unnecessary.

As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained. Further, by providing each oscillator 31 inside each chuck pin 23, it is possible to suppress the exposure of each oscillator 31 without providing each cover 32 according to the first embodiment. This makes it possible to prevent each oscillator 31 from being contaminated. As a result, the substrate W1 is suppressed from being contaminated due to the contamination of the vibrator 31, so that the substrate quality can be improved while simplifying the apparatus configuration.

<Other Embodiments>
In the above description, it has been illustrated that each oscillator 31 is provided so as to be exposed on each upper part of each chuck pin 23, or is provided so as to be built in each upper part of each chuck pin 23. For example, the chuck pins 23 may be provided so as to be exposed in the lower portion or the intermediate portion of each chuck pin 23, or may be provided in a built-in manner.

Further, in the above description, it has been illustrated that the oscillator 31 is provided on the chuck pin 23, but the present invention is not limited to this. The liquid may be vibrated to prevent the adhesive from adhering to each chuck pin 23. It is also possible to incorporate the oscillator 31 into the table 20 and transmit the vibration from the oscillator 31 to the chuck pin 23 via the table 20.

Further, in the above description, it has been illustrated that each vibrator 31 is vibrated in the circumferential direction of the substrate W1 at predetermined time of several seconds, but the present invention is not limited to this, and for example, the vibration pattern of each vibrator 31 There are various types, and each oscillator 31 may be vibrated in the order of a predetermined pattern, or may be vibrated irregularly. Although each oscillator 31 is selectively vibrated and any of the chuck pins 23 is vibrated, all the chuck pins 23 are selectively vibrated, and finally all the chuck pins 23 are vibrated. Vibrate. That is, all the chuck pins 23 are vibrated while the processing liquid is being supplied. It is also possible to vibrate all the chuck pins 23 at the same time.

Further, in the above description, it has been illustrated that one of the chuck pins 23 is vibrated by the vibration of each oscillator 31 and then the supply of the processing liquid to the processing object W on the table 20 is started. For example, after starting the supply of the processing liquid to the processing object W on the table 20, any of the chuck pins 23 may be vibrated by the vibration of each oscillator 31. That is, the vibration of each chuck pin 23 may be started before the supply of the treatment liquid is opened, or the vibration of each chuck pin 23 may be started after the supply of the treatment liquid is started. Even in this case, one of the chuck pins 23 is vibrated while the processing liquid is being supplied to the processing object W.

Further, in the above description, it has been illustrated that the individual frequencies of each oscillator 31 are the same and constant, but the present invention is not limited to this, and the individual frequencies of each oscillator 31 may be different. Well, or it may be changed rather than constant. For example, the individual frequencies of each oscillator 31 are all different, or are different for each set. Further, the individual frequency of each oscillator 31 is changed according to the rotation speed of the table 20. As a result, it becomes possible to adjust the fixing force for fixing the object W to be processed to the table 20 by each chuck pin 23 according to the increase or decrease of the rotation speed of the table 20. For example, when increasing the rotation speed of the table 20, the frequency of the vibrator 31 is decreased in order to secure a fixing force for fixing the object W to be processed to the table 20. On the other hand, when lowering the rotation speed of the table 20, the frequency of the vibrator 31 is raised within a range in which the required fixing force can be secured. In this way, it is possible to prevent the adhesive removed from the substrate W1 from adhering to the chuck pin 23 while ensuring the fixing force for fixing the object W to be processed to the table 20. It is also possible to combine changing the frequency of the vibrator 31 according to the rotation speed of the table 20 and changing the number of vibrators 31 (chuck pins 23) to vibrate according to the rotation speed of the table 20. is there.

In the above description, the individual frequencies of the vibrators 31 are determined and set in advance by experiments or the like so as to be a frequency that can suppress the adhesion of the adhesive to the chuck pin 23.

Further, in the above description, it has been illustrated that the MEMS oscillator or crystal oscillator as the oscillator 31 and the piezoelectric element are provided on the chuck pin 23, but the present invention is not limited to this, and for example, the MEMS as the oscillator 31 is provided. A MEMS oscillator having an oscillator and an oscillator circuit, or a crystal oscillator having a crystal oscillator and an oscillator circuit as the oscillator 31 may be provided on the chuck pin 23.

Further, in the above description, depending on the rotation speed of the table 20, the upper surface of the ring W2 of the processing object W supported by the table 20 or the outer circumference of the substrate W1 of the processing object W supported by the table 20. Although it has been illustrated that the liquid is discharged by the liquid supply unit 60 toward the end portion, the present invention is not limited to this, and for example, the liquid is directed between the substrate W1 and the ring W2 of the processing object W supported by the table 20. It may be discharged. It is also possible to supply the liquid to both the upper surface of the ring W2 of the processing object W supported by the table 20 and the outer peripheral end of the substrate W1 at the same time, and the substrate of the processing object W supported by the table 20 can be supplied at the same time. The outer peripheral edge of W1, both between the substrate W1 and the ring W2, the upper surface of the ring W2 of the processing object W supported by the table 20, the outer peripheral edge of the substrate W1, and the substrate W1 and the ring W2. It is also possible to supply the liquid to the three places in between at the same time.

Further, in the above description, it has been illustrated that two nozzles, the first nozzle 61 and the second nozzle 62, are provided, but the present invention is not limited to this, and for example, only the first nozzle 61 is provided. The first nozzle 61 may be moved by a moving mechanism to be used in place of the second nozzle 62. That is, when the rotation speed of the table 20 is the first rotation speed, the first nozzle 61 discharges the liquid toward the upper surface of the ring W2 of the processing object W on the table 20, and the rotation speed of the table 20. When is the second rotation speed, the liquid is discharged toward the outer peripheral end portion of the substrate W1 of the processing object W on the table 20. The first nozzle 61 is liquid toward the upper surface of the ring W2 of the object W to be processed on the table 20 before the rotation speed of the table 20 is changed from the first rotation speed to the second rotation speed. Moves from the position where the liquid is discharged to the position where the liquid is discharged toward the outer peripheral end of the substrate W1 of the object W to be processed on the table 20. Further, it is also possible to provide a plurality of one or both of the first nozzle 61 and the second nozzle 62 in the circumferential direction of the ring W2 and the substrate W1 at predetermined intervals.

Further, in the above description, the first nozzle 61 and the second nozzle 62 may be tilted with respect to the vertical direction or may be parallel to the vertical direction. Further, the inclination angle of the first nozzle 61 and the inclination angle of the second nozzle 62 may be the same or different. The individual inclination angles of the first nozzle 61 and the second nozzle 62 may be changed according to the rotation speed of the table 20, for example, an angle changing mechanism (angle changing portion) having a connecting member, a motor, or the like. It may be changed according to the rotation speed of the table 20. Further, a plurality of nozzles having different inclination angles are provided for each rotation speed of the table 20, and these nozzles are selected and used according to the rotation speed of the table 20, and the inclination angles of the nozzles are selected according to the rotation speed of the table 20. May be changed. In this way, the angle (discharge angle) at which the nozzles such as the first nozzle 61 and the second nozzle 62 discharge the liquid with respect to the processing object W on the table 20 can be changed.

Although some embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

10 Substrate processing device 20 Table 23 Chuck pin 30 Vibrating part 31 Oscillator 32 Cover 50 Processing liquid supply part W Processing object W1 Substrate W2 Ring W3 Dicing tape

Claims (6)

A table that supports a substrate, a ring that surrounds the substrate, a lower surface of the substrate, and a dicing tape that adheres to the lower surface of the ring, and a table that supports the object to be processed.
A plurality of chuck pins for fixing the processing object supported by the table to the table,
A processing liquid supply unit that supplies a processing liquid for processing the substrate to the processing object fixed to the table by the plurality of chuck pins.
A vibrating unit that vibrates all of the plurality of chuck pins while the processing liquid is being supplied to the processing object by the processing liquid supply unit.
Substrate processing device. The vibrating part is
A plurality of oscillators individually provided for all of the plurality of chuck pins, and
A plurality of covers that individually cover the plurality of oscillators, and
The substrate processing apparatus according to claim 1. The substrate processing apparatus according to claim 1, wherein the vibrating unit has a plurality of oscillators individually incorporated in all of the plurality of chuck pins. A rotation mechanism that rotates the table in a plane,
The substrate according to any one of claims 1 to 3, wherein the vibrating portion changes the number of chuck pins to be vibrated among the plurality of chuck pins according to the rotation speed of the table rotated by the rotating mechanism. Processing equipment. A step of supporting a processing object having a substrate, a ring surrounding the substrate, and a dicing tape that adheres to the lower surface of the substrate and the lower surface of the ring by a table.
A step of fixing the object to be processed supported by the table to the table with a plurality of chuck pins, and
A step of supplying a processing liquid for processing the substrate to the processing object fixed to the table by the plurality of chuck pins by a processing liquid supply unit.
A step of vibrating all of the plurality of chuck pins by the vibrating unit while the processing liquid is being supplied to the object to be processed by the processing liquid supply unit.
Substrate processing method having. Prior to the supply step, there is a step of rotating the table to which the processing object is fixed by the plurality of chuck pins by a rotation mechanism.
The substrate processing method according to claim 5, wherein the vibrating portion changes the number of chuck pins to be vibrated among the plurality of chuck pins according to the rotation speed of the table rotated by the rotating mechanism.

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