CN111463172A - Method for manufacturing electronic device - Google Patents

Method for manufacturing electronic device Download PDF

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Publication number
CN111463172A
CN111463172A CN201910052751.0A CN201910052751A CN111463172A CN 111463172 A CN111463172 A CN 111463172A CN 201910052751 A CN201910052751 A CN 201910052751A CN 111463172 A CN111463172 A CN 111463172A
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CN
China
Prior art keywords
flexible substrate
release layer
electronic device
carrier plate
ultrasonic
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Pending
Application number
CN201910052751.0A
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Chinese (zh)
Inventor
陈谚宗
游明璋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hannstar Display Corp
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Hannstar Display Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hannstar Display Corp filed Critical Hannstar Display Corp
Priority to CN201910052751.0A priority Critical patent/CN111463172A/en
Publication of CN111463172A publication Critical patent/CN111463172A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a manufacturing method of an electronic device, which comprises the following steps. The flexible substrate is arranged on the carrier plate, and the element structure layer is arranged on the flexible substrate, wherein the carrier plate is provided with a release layer, and the flexible substrate is connected with the carrier plate through the release layer. And performing a cutting procedure to form a peripheral cutting area on the periphery of the element structure layer. The depth of the peripheral cutting area extends from the element structure layer to a position between the release layer and the carrier plate. And performing a breaking procedure to form a break between the flexible substrate and the release layer in the peripheral cutting area. Performing an ultrasonic oscillation process to make water molecules enter between the flexible substrate and the release layer through the break by oscillation. After the ultrasonic oscillation process, a peeling process is performed to separate the flexible substrate from the release layer.

Description

Method for manufacturing electronic device
Technical Field
The present invention relates to a method for manufacturing an electronic device, and more particularly, to a method for manufacturing an electronic device using ultrasonic oscillation to assist releasing.
Background
For example, a flexible electronic product may be manufactured by using a display, a smart phone, a smart watch, and the like, and a flexible substrate and a release layer disposed on a rigid substrate need to be peeled Off in a manufacturing process of the flexible electronic product, the conventional peeling technology includes laser peeling (L aser L ift-Off, LL O) or mechanical peeling (Mechanism L ift-Off, M L O), wherein the mechanical peeling is performed by using auxiliary methods such as water injection, steam, air blowing, pyrolysis, and the like, however, the method takes a long time, and a large amount of flexible electronic products cannot be manufactured rapidly, so that the shipping efficiency of the manufacturing end is greatly reduced.
Disclosure of Invention
The invention is directed to a method for manufacturing an electronic device, which can rapidly separate a flexible substrate from a release layer by an ultrasonic oscillation process.
The invention provides a manufacturing method of an electronic device, which comprises the following steps. The flexible substrate is arranged on the carrier plate, the element structure layer is arranged on the flexible substrate, the carrier plate is provided with a release layer, and the flexible substrate is connected with the carrier plate through the release layer. And performing a cutting procedure to form a peripheral cutting area on the periphery of the element structure layer. The depth of the peripheral cutting area extends from the element structure layer to a position between the release layer and the carrier plate. And performing a breaking procedure to form a break between the flexible substrate and the release layer in the peripheral cutting area. Performing an ultrasonic oscillation process to make water molecules enter between the flexible substrate and the release layer through the break by oscillation. After the ultrasonic oscillation process, a peeling process is performed to separate the flexible substrate from the release layer.
According to an embodiment of the present invention, before the performing of the breaking process, the supporting film is formed on the component structure layer.
According to an embodiment of the present invention, when the ultrasonic oscillation process is performed, the frequency of the ultrasonic oscillation process is between 20KHz and 2MHz, the temperature of the ultrasonic oscillation process is between 20 ℃ and 80 ℃, and the time of the ultrasonic oscillation process is between 1 minute and 20 minutes.
According to an embodiment of the present invention, after the breaching process and before the ultrasonic oscillation process, an ultrasonic water tank is provided. The ultrasonic water tank is provided with a placing platform, and the carrier plate is placed on the placing platform. The element structure layer, the flexible substrate and the carrier plate are soaked in water.
According to an embodiment of the present invention, the ultrasonic water tank has a bottom surface, and the placing platform is disposed on the bottom surface.
According to an embodiment of the present invention, the ultrasonic water tank has a side surface and a bottom surface, the side surface is adjacent to the bottom surface, and the placing platform is disposed on the side surface.
According to an embodiment of the present invention, the placing platform and the bottom surface have an inclined angle therebetween.
According to an embodiment of the present invention, after the ultrasonic oscillation process and before the peeling process, a first cleaning process is performed to remove water molecules on the structural layer of the device. After the stripping process, a second cleaning process is performed to remove water molecules on the flexible substrate.
According to an embodiment of the present invention, after the peeling process is performed, the supporting film is formed on the flexible substrate.
According to an embodiment of the present invention, the support film includes an ultraviolet light film or a thermoplastic polyester film.
In view of the above, in the manufacturing method of the electronic device of the invention, the water molecules enter between the flexible substrate and the release layer through the break by oscillating through the ultrasonic oscillation process. Therefore, the flexible substrate and the release layer can be quickly separated.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
Fig. 1A to fig. 1H are schematic cross-sectional views illustrating a method for manufacturing an electronic device according to an embodiment of the invention;
FIG. 2 is a perspective view of FIG. 1C;
FIG. 3 is a perspective view of FIG. 1D;
fig. 4A to 4C are schematic diagrams illustrating an ultrasonic oscillation process in a method for manufacturing an electronic device according to various embodiments of the invention.
Description of the reference numerals
1: an electronic device;
10: a flexible substrate;
20: an element structure layer;
30: a carrier plate;
31: an edge;
40: a release layer;
50: an adhesive layer;
60: breaking the opening;
70. 70 a: supporting the membrane;
80. 80a, 80b, 80 c: an ultrasonic water tank;
82. 82a, 82b, 82 c: placing a platform;
83: groove
84. 84a, 84 b: a bottom surface;
86: a baffle plate;
87: a side surface;
88: a telescopic support part;
90: an extractor;
91: a suction cup;
100: an air gun;
a: a cutting knife;
b: a vacuum adsorption platform;
c: a peripheral cutting zone;
d: poking a knife;
g: voids
W: a water molecule;
α, β the angle of inclination.
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A to fig. 1H are schematic cross-sectional views illustrating a method for manufacturing an electronic device according to an embodiment of the invention. Fig. 2 is a perspective view of fig. 1C. Fig. 3 is a perspective view of fig. 1D. Fig. 4A to 4C are schematic diagrams illustrating an ultrasonic oscillation process in a method for manufacturing an electronic device according to various embodiments of the invention.
Referring to fig. 1A, in the present embodiment, firstly, a flexible substrate 10 is disposed on a carrier 30, and an element structure layer 20 is disposed on the flexible substrate 10, wherein a release layer 40 is disposed on the carrier 30, and the flexible substrate 10 is connected to the carrier 30 through the release layer 40, where the flexible substrate 10 is, for example, Polyimide (PI), Polyethylene Terephthalate (PET), Cyclic Olefin Polymer (COP), Polycarbonate (PC), Polymethyl Methacrylate (PMMA), Cyclic Olefin Copolymer (COC), Cellulose triacetate (Triacetyl Cellulose, sapphire), Polypropylene (PP), PolyStyrene (PS), or other flexible substrate with a flexible material as a main material, and the flexible substrate 30 is, for example, glass, quartz, a synthetic resin, or other flexible material suitable for bonding with a peripheral edge of a flexible element 30, such as a glass substrate, a plastic, a synthetic resin, or other flexible material, such as a glass substrate 30, a plastic substrate with a peripheral edge of a transparent plastic layer 8630, and a peripheral edge of a light Emitting Diode (oled) or other suitable for sensing elements, such as a liquid crystal display device 30, and a display device 30, wherein the flexible substrate is preferably a flexible substrate with a peripheral edge of a glass substrate 30 or a transparent adhesive layer 8630, such as a glass substrate, a transparent plastic, and a display element, preferably a transparent plastic substrate 30, a transparent adhesive layer or a transparent glass substrate, such as a transparent plastic substrate 30, and a display element, wherein the invention is not suitable for displaying a display device.
Next, referring to fig. 1A again, in order to effectively protect the component structure layer 20, a supporting film 70 may be formed on the component structure layer 20. Here, the supporting film 70 is, for example, an ultraviolet light film or a thermoplastic polyester film, and has a relatively thick and stiff material characteristic, so that the purpose of protecting the element structure layer 20 can be achieved. In addition, since the adhesion force of the supporting membrane 70 is stronger, the adhesion force between the supporting membrane 70 and the flexible substrate 10 is greater than the adhesion force between the flexible substrate 10 and the carrier 30.
Next, referring to fig. 1B, a cutting procedure is performed to form a peripheral cutting region C on the periphery of the device structure layer 20, wherein a depth of the peripheral cutting region C extends from the device structure layer 20 to a position between the release layer 40 and the carrier 30. Here, the cutting procedure is, for example, laser cutting or mechanical cutting or other suitable cutting tools (such as water knife, air knife, hot steel wire or cutter made of hard material), and the invention is not limited thereto. As shown in fig. 1B, the present embodiment is exemplified by mechanical cutting, wherein the mechanical cutting is, for example, a cutting blade a for cutting the component structure layer 20, the flexible substrate 10 and the releasing layer 40, wherein the cutting blade a is located between the supporting film 70 and the adhesive layer 50.
Next, referring to fig. 1C and fig. 2, a breaking procedure is performed to form a break 60 between the flexible substrate 10 and the release layer 40 in the peripheral cutting region C. Here, for example, a cut 60 is formed between the flexible substrate 10 and the release layer 40 in the peripheral cutting region C by the poking knife D, and the cut 60 surrounds the periphery of the flexible substrate 10.
Next, referring to fig. 1D and fig. 3, an ultrasonic oscillation process is performed to make water molecules W enter between the flexible substrate 10 and the release layer 40 through the break 60 by oscillation. The step of performing the ultrasonic oscillation process includes providing an ultrasonic water tank 80, wherein the ultrasonic water tank 80 has a placing platform 82, the carrier 30 is placed on the placing platform 82, and the component structure layer 20, the flexible substrate 10 and the carrier 30 are immersed in water, preferably, the water does not have a conductive property. Here, the ultrasonic water tank 80 has a bottom surface 84, and the placement platform 82 is disposed on the bottom surface 84. That is, the carrier 30 and the upper release layer 40, the flexible substrate 10, the device structure layer 20, and the supporting film 70 of the present embodiment are parallel to the bottom surface 84 of the ultrasonic water tank 80, but not limited thereto.
In another embodiment, the placement platform 82 of the ultrasonic water tank 80 may not be parallel to the bottom surface 84. Fig. 4A to 4C are schematic diagrams illustrating an ultrasonic oscillation process in a method for manufacturing an electronic device according to various embodiments of the invention. For ease of illustration, fig. 4C is shown in partial perspective.
In detail, referring to fig. 4A, the ultrasonic water tank 80a has a side surface 87 (not shown because this figure is a partial perspective view), and the side surface 87 is adjacent to the bottom surface 84A, wherein the placing platform 82a is disposed on the side surface 87, and an inclined angle α is formed between the placing platform 82a and the bottom surface 84A in the ultrasonic water tank 80a, wherein the inclined angle α is smaller than 90 degrees, that is, the carrier 30 and the release layer 40 thereon, the flexible substrate 10, the component structure layer 20, and the supporting film 70 are obliquely disposed in the ultrasonic water tank 80 a. furthermore, a gap G is formed between the carrier 30 and the placing platform 82a, so that the effect of the ultrasonic oscillation process is better.
In another embodiment, referring to FIG. 4B, FIG. 4B is similar to FIG. 4A, the main difference between the two embodiments is that the ultrasonic sink 80B further includes a baffle 86, wherein the baffle 86 is disposed on the bottom surface 84B and adapted to abut against the carrier 30 to prevent the carrier 30 from sliding, meanwhile, the placing platform 82B and the bottom surface 84B in the ultrasonic sink 80B have an inclined angle α less than or equal to 90 degrees, and the carrier 30 and the baffle 86 have an inclined angle β, wherein the inclined angle β is less than or equal to 90 degrees.
Next, referring to fig. 1D, fig. 3 and fig. 4A to fig. 4C, the ultrasonic oscillation process is started for the ultrasonic water tanks 80, 80a, 80b and 80C. Preferably, the frequency of the ultrasonic oscillation process is preferably between 20KHz and 2MHz, the temperature of the ultrasonic oscillation process is preferably between 20 ℃ and 80 ℃, and the time of the ultrasonic oscillation process is preferably between 1 minute and 20 minutes. At this time, through the ultrasonic oscillation process, water molecules W can rapidly enter between the flexible substrate 10 and the release layer 40 through the break 60, so as to weaken the bonding force between the flexible substrate 10 and the release layer 40. Note that, in order to clearly show that the water molecules W rapidly enter between the flexible substrate 10 and the release layer 40 through the break 60, the flow direction of the water molecules W is shown by the arrow direction in fig. 3.
Next, referring to fig. 1E, after the ultrasonic oscillation process, a first cleaning process is performed to remove water molecules W on the device structure layer 20. As shown in FIG. 1E, the ultrasonic water tank 80 has a plurality of telescopic supports 88 disposed in the placement platform 82. When the first cleaning process is to be performed, the retractable supporting portion 88 protrudes from the disposing platform 82, and the carrier 30, the release layer 40 thereon, the flexible substrate 10, the device structure layer 20, and the supporting film 70 are lifted up to the exposed water surface of the device structure layer 20. At this time, the air gun 100 may be used to remove the residual water molecules W on the component structure layer 20 and the supporting membrane 70, and besides the air gun, the present invention may also use an air knife or other methods that will not damage the component structure layer 20 and the supporting membrane 70, which is not limited herein, so as to facilitate the subsequent peeling process.
Referring to fig. 1F, a peeling process is performed to separate the flexible substrate 10 from the release layer 40, wherein the peeling process employs, for example, mechanical peeling (mecanism L ift-Off, M L O), but not limited thereto, the carrier 30 having performed the first cleaning process and the release layer 40, the flexible substrate 10, the device structure layer 20, and the supporting film 70 thereon are removed from the ultrasonic water tank 80 and placed on the vacuum suction platform b, and then the supporting film 70 is sucked by the suction cup 91 on the suction device 90 to separate the flexible substrate 10 from the release layer 40. since the adhesive force between the supporting film 70 and the flexible substrate 10 is greater than the adhesive force between the flexible substrate 10 and the carrier 30, the supporting film 70 is sucked by the suction cup 91 on the suction device 90, the substrate 10 is separated from the release layer 40 first, since the ultrasonic oscillation process weakens the bonding force between the flexible substrate 10 and the release layer 40, the suction cup 91 on the suction device 90 supports the film 70, the substrate 10 can be separated from the release layer 40 quickly and the supporting film 20 can be protected by the device 20.
It should be noted that in another embodiment, not shown, the first cleaning process and the stripping process can be performed by the same machine. For example, the suction cup of the suction device has a vacuum hole and a plurality of air blowing holes, wherein the vacuum hole is located at the center of the suction cup, and the air blowing holes are disposed around the vacuum hole. The air blowing holes can blow away the water molecules W remaining on the element structure layer 20 and the supporting film 70, and then perform vacuum adsorption to separate the flexible substrate 10 and the release layer 40, which still falls within the protection scope of the present invention.
Next, referring to fig. 1G, a second cleaning process is performed to remove the water molecules W on the flexible substrate 10. In the present embodiment, the air gun 100 is used to remove the residual water molecules W on the flexible substrate 10 for the subsequent operation.
Finally, referring to fig. 1H, in order to effectively protect the element structure layer 20, a supporting film 70a may be formed on the flexible substrate 10, thereby completing the manufacturing of the electronic device 1. Here, the material of the support film 70a is the same as that of the support film 70, and is, for example, an ultraviolet film or a thermoplastic polyester film. However, in other embodiments, the material of the supporting membrane 70a and the material selected for the supporting membrane 70 or the bonding and detaching method may be different, and the invention is not limited thereto.
In summary, in the manufacturing method of the electronic device of the invention, through the ultrasonic oscillation process, water molecules enter between the flexible substrate and the release layer through the break by oscillation, so as to reduce the bonding force between the flexible substrate and the release layer, and the flexible substrate and the release layer can be rapidly separated.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. A method of making an electronic device, comprising:
arranging a flexible substrate on a carrier plate and arranging an element structure layer on the flexible substrate, wherein a release layer is arranged on the carrier plate, and the flexible substrate is connected with the carrier plate through the release layer;
performing a cutting procedure to form a peripheral cutting area on the periphery of the element structure layer, wherein the depth of the peripheral cutting area extends from the element structure layer to a position between the release layer and the carrier plate;
performing a breaking procedure to form a break between the flexible substrate and the release layer in the peripheral cutting region;
performing an ultrasonic oscillation process to enable water molecules to enter between the flexible substrate and the release layer through the break through oscillation; and
after the ultrasonic oscillation process, a peeling process is performed to separate the flexible substrate from the release layer.
2. The method of manufacturing an electronic device according to claim 1, further comprising:
forming a support membrane on the element structure layer before the breaking procedure.
3. The method as claimed in claim 1, wherein the ultrasonic oscillation process is performed at a frequency of 20KHz to 2MHz, at a temperature of 20 ℃ to 80 ℃, and for a time of 1 minute to 20 minutes.
4. The method of manufacturing an electronic device according to claim 1, further comprising:
after the breaching process and before the ultrasonic oscillation process, providing an ultrasonic water tank, wherein the ultrasonic water tank is provided with a placing platform, the carrier plate is placed on the placing platform, and the element structure layer, the flexible substrate and the carrier plate are soaked in water.
5. The method as claimed in claim 4, wherein the ultrasonic water tank has a bottom surface, and the platform is disposed on the bottom surface.
6. The method as claimed in claim 4, wherein the ultrasonic water tank has a side surface and a bottom surface, the side surface is adjacent to the bottom surface, and the platform is disposed on the side surface.
7. The method of claim 6, wherein the platform is inclined from the bottom surface.
8. The method of manufacturing an electronic device according to claim 1, further comprising:
after the ultrasonic oscillation process and before the peeling process, performing a first cleaning process to remove the water molecules on the component structure layer; and
after the stripping process, a second cleaning process is performed to remove the water molecules on the flexible substrate.
9. The method of manufacturing an electronic device according to claim 1, further comprising:
and forming a supporting membrane on the flexible substrate after the stripping procedure.
10. The method of manufacturing an electronic device according to claim 2 or 9, wherein the support film comprises an ultraviolet film or a thermoplastic polyester film.
CN201910052751.0A 2019-01-21 2019-01-21 Method for manufacturing electronic device Pending CN111463172A (en)

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Application Number Priority Date Filing Date Title
CN201910052751.0A CN111463172A (en) 2019-01-21 2019-01-21 Method for manufacturing electronic device

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Publication Number Publication Date
CN111463172A true CN111463172A (en) 2020-07-28

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555180A (en) * 1991-08-29 1993-03-05 Fujitsu Ltd Lift-off device for large-sized substrate and regulating method therefor
JP2000188269A (en) * 1998-10-16 2000-07-04 Canon Inc Method for separating members, separation device and manufacture of substrate
US20020100941A1 (en) * 2001-01-31 2002-08-01 Takao Yonehara Thin-film semiconductor device and method of manufacturing the same
CN1873932A (en) * 2005-05-31 2006-12-06 株式会社半导体能源研究所 Method for manufacturing semiconductor device, and semiconductor device
CN102176435A (en) * 2010-12-27 2011-09-07 友达光电股份有限公司 Flexible substrate structure and manufacturing method thereof
CN102280371A (en) * 2011-04-06 2011-12-14 友达光电股份有限公司 Flexible electronic component and method for manufacturing the same
JP2013243172A (en) * 2012-05-17 2013-12-05 Tokyo Ohka Kogyo Co Ltd Peeling device and peeling method
CN105750741A (en) * 2015-01-06 2016-07-13 株式会社迪思科 Wafer producing method
CN107706314A (en) * 2016-08-09 2018-02-16 阳程科技股份有限公司 Method for separating flexible display from bearing substrate

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555180A (en) * 1991-08-29 1993-03-05 Fujitsu Ltd Lift-off device for large-sized substrate and regulating method therefor
JP2000188269A (en) * 1998-10-16 2000-07-04 Canon Inc Method for separating members, separation device and manufacture of substrate
US20020100941A1 (en) * 2001-01-31 2002-08-01 Takao Yonehara Thin-film semiconductor device and method of manufacturing the same
CN1873932A (en) * 2005-05-31 2006-12-06 株式会社半导体能源研究所 Method for manufacturing semiconductor device, and semiconductor device
CN102176435A (en) * 2010-12-27 2011-09-07 友达光电股份有限公司 Flexible substrate structure and manufacturing method thereof
CN102280371A (en) * 2011-04-06 2011-12-14 友达光电股份有限公司 Flexible electronic component and method for manufacturing the same
JP2013243172A (en) * 2012-05-17 2013-12-05 Tokyo Ohka Kogyo Co Ltd Peeling device and peeling method
CN105750741A (en) * 2015-01-06 2016-07-13 株式会社迪思科 Wafer producing method
CN107706314A (en) * 2016-08-09 2018-02-16 阳程科技股份有限公司 Method for separating flexible display from bearing substrate

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Application publication date: 20200728