JP2013229351A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013229351A5 JP2013229351A5 JP2012098285A JP2012098285A JP2013229351A5 JP 2013229351 A5 JP2013229351 A5 JP 2013229351A5 JP 2012098285 A JP2012098285 A JP 2012098285A JP 2012098285 A JP2012098285 A JP 2012098285A JP 2013229351 A5 JP2013229351 A5 JP 2013229351A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- dry etching
- etching method
- power
- period
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000007789 gas Substances 0.000 claims 18
- 238000001312 dry etching Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 6
- 239000001569 carbon dioxide Substances 0.000 claims 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 239000002361 compost Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012098285A JP2013229351A (ja) | 2012-04-24 | 2012-04-24 | ドライエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012098285A JP2013229351A (ja) | 2012-04-24 | 2012-04-24 | ドライエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013229351A JP2013229351A (ja) | 2013-11-07 |
| JP2013229351A5 true JP2013229351A5 (enExample) | 2014-11-06 |
Family
ID=49676727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012098285A Abandoned JP2013229351A (ja) | 2012-04-24 | 2012-04-24 | ドライエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013229351A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10297459B2 (en) | 2013-09-20 | 2019-05-21 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| KR101620490B1 (ko) * | 2014-08-08 | 2016-05-13 | ㈜드림텍 | 침수방지 기능 강화를 위한 나노 코팅 방법 |
| US9620377B2 (en) * | 2014-12-04 | 2017-04-11 | Lab Research Corporation | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch |
| US9887097B2 (en) | 2014-12-04 | 2018-02-06 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US9543148B1 (en) | 2015-09-01 | 2017-01-10 | Lam Research Corporation | Mask shrink layer for high aspect ratio dielectric etch |
| US10276398B2 (en) | 2017-08-02 | 2019-04-30 | Lam Research Corporation | High aspect ratio selective lateral etch using cyclic passivation and etching |
| US10658174B2 (en) | 2017-11-21 | 2020-05-19 | Lam Research Corporation | Atomic layer deposition and etch for reducing roughness |
| US11171011B2 (en) | 2018-08-21 | 2021-11-09 | Lam Research Corporation | Method for etching an etch layer |
| JP7190940B2 (ja) * | 2019-03-01 | 2022-12-16 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
-
2012
- 2012-04-24 JP JP2012098285A patent/JP2013229351A/ja not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013229351A5 (enExample) | ||
| Zhang et al. | Rotating gliding arc assisted methane decomposition in nitrogen for hydrogen production | |
| JP2011151394A5 (ja) | 半導体装置の作製方法 | |
| JP2015076459A5 (enExample) | ||
| WO2012038329A3 (de) | Stoffverwertung mit elektropositivem metall | |
| JP2012182447A5 (ja) | 半導体膜の作製方法 | |
| TW200731413A (en) | Technique for forming a contact insulation layer with enhanced stress transfer efficiency | |
| MY163241A (en) | Composite conductive material, power storage device, conductive dispersion, conductive device, conductive composite and thermally conductive composite and method of producing a composite conductive material. | |
| TW200644123A (en) | Methods of removing resist from substrates in resist stripping chambers | |
| WO2014051740A3 (en) | Non-planar iii-v field effect transistors with conformal metal gate electrode & nitrogen doping of gate dielectric interface | |
| JP2011071498A5 (ja) | 半導体装置の作製方法 | |
| WO2014110446A3 (en) | Method and system for graphene formation | |
| WO2011133481A3 (en) | Power mosfet with embedded recessed field plate and methods of fabrication | |
| SG196791A1 (en) | Profile and cd uniformity control by plasma oxidation treatment | |
| GB2524411A (en) | Group III-N transistors on nanoscale template structures | |
| JP2011238912A5 (ja) | 半導体装置の作製方法 | |
| PH12012500397A1 (en) | Method for texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell | |
| JP2015018885A5 (enExample) | ||
| WO2012037136A3 (en) | Improved lateral uniformity in silicon recess etch | |
| JP2013012624A5 (enExample) | ||
| WO2009011224A1 (ja) | 金属酸化物半導体の製造方法、それにより得られた薄膜トランジスタ | |
| TW200603291A (en) | Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method | |
| JP2010153827A5 (enExample) | ||
| JP2011198983A5 (enExample) | ||
| JP2016207753A5 (enExample) |