JP2013229351A - ドライエッチング方法 - Google Patents

ドライエッチング方法 Download PDF

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Publication number
JP2013229351A
JP2013229351A JP2012098285A JP2012098285A JP2013229351A JP 2013229351 A JP2013229351 A JP 2013229351A JP 2012098285 A JP2012098285 A JP 2012098285A JP 2012098285 A JP2012098285 A JP 2012098285A JP 2013229351 A JP2013229351 A JP 2013229351A
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JP
Japan
Prior art keywords
gas
groove
etching method
dry etching
frequency power
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Abandoned
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JP2012098285A
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English (en)
Japanese (ja)
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JP2013229351A5 (https=
Inventor
Mitsuhiro Kamimura
光弘 上村
Kouichi Nakaune
功一 中宇禰
Ken Kitaoka
謙 北岡
Tetsuo Ono
哲郎 小野
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2012098285A priority Critical patent/JP2013229351A/ja
Publication of JP2013229351A publication Critical patent/JP2013229351A/ja
Publication of JP2013229351A5 publication Critical patent/JP2013229351A5/ja
Abandoned legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012098285A 2012-04-24 2012-04-24 ドライエッチング方法 Abandoned JP2013229351A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012098285A JP2013229351A (ja) 2012-04-24 2012-04-24 ドライエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012098285A JP2013229351A (ja) 2012-04-24 2012-04-24 ドライエッチング方法

Publications (2)

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JP2013229351A true JP2013229351A (ja) 2013-11-07
JP2013229351A5 JP2013229351A5 (https=) 2014-11-06

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JP2012098285A Abandoned JP2013229351A (ja) 2012-04-24 2012-04-24 ドライエッチング方法

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101620490B1 (ko) * 2014-08-08 2016-05-13 ㈜드림텍 침수방지 기능 강화를 위한 나노 코팅 방법
KR20160068002A (ko) * 2014-12-04 2016-06-14 램 리써치 코포레이션 고 종횡비 실린더 에칭을 위해 금속-함유 측벽 패시베이션을 증착하기 위한 기법
WO2019027811A1 (en) * 2017-08-02 2019-02-07 Lam Research Corporation SELECTIVE HIGH ASPECT RATIO LATERAL ENGRAVING USING CYCLIC PASSIVATION AND CYCLIC ENGRAVING
US10297459B2 (en) 2013-09-20 2019-05-21 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10304693B2 (en) 2014-12-04 2019-05-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10431458B2 (en) 2015-09-01 2019-10-01 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
WO2020040912A1 (en) * 2018-08-21 2020-02-27 Lam Research Corporation Method for etching an etch layer
US10658174B2 (en) 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
JP2020141103A (ja) * 2019-03-01 2020-09-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10297459B2 (en) 2013-09-20 2019-05-21 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
KR101620490B1 (ko) * 2014-08-08 2016-05-13 ㈜드림텍 침수방지 기능 강화를 위한 나노 코팅 방법
KR20160068002A (ko) * 2014-12-04 2016-06-14 램 리써치 코포레이션 고 종횡비 실린더 에칭을 위해 금속-함유 측벽 패시베이션을 증착하기 위한 기법
KR102644442B1 (ko) 2014-12-04 2024-03-06 램 리써치 코포레이션 고 종횡비 실린더 에칭을 위해 금속-함유 측벽 패시베이션을 증착하기 위한 기법
US10304693B2 (en) 2014-12-04 2019-05-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10431458B2 (en) 2015-09-01 2019-10-01 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
US10276398B2 (en) 2017-08-02 2019-04-30 Lam Research Corporation High aspect ratio selective lateral etch using cyclic passivation and etching
US11011388B2 (en) 2017-08-02 2021-05-18 Lam Research Corporation Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching
WO2019027811A1 (en) * 2017-08-02 2019-02-07 Lam Research Corporation SELECTIVE HIGH ASPECT RATIO LATERAL ENGRAVING USING CYCLIC PASSIVATION AND CYCLIC ENGRAVING
US10658174B2 (en) 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
US11170997B2 (en) 2017-11-21 2021-11-09 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
WO2020040912A1 (en) * 2018-08-21 2020-02-27 Lam Research Corporation Method for etching an etch layer
US11171011B2 (en) 2018-08-21 2021-11-09 Lam Research Corporation Method for etching an etch layer
JP2020141103A (ja) * 2019-03-01 2020-09-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7190940B2 (ja) 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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