JP2013197574A5 - - Google Patents
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- Publication number
- JP2013197574A5 JP2013197574A5 JP2012066716A JP2012066716A JP2013197574A5 JP 2013197574 A5 JP2013197574 A5 JP 2013197574A5 JP 2012066716 A JP2012066716 A JP 2012066716A JP 2012066716 A JP2012066716 A JP 2012066716A JP 2013197574 A5 JP2013197574 A5 JP 2013197574A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- substrate
- manufacturing
- opening pattern
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 5
- 239000011148 porous material Substances 0.000 claims 2
- 241000023320 Luma <angiosperm> Species 0.000 claims 1
- OSWPMRLSEDHDFF-UHFFFAOYSA-N methyl salicylate Chemical compound COC(=O)C1=CC=CC=C1O OSWPMRLSEDHDFF-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012066716A JP5906108B2 (ja) | 2012-03-23 | 2012-03-23 | フォトニック結晶の製造方法及び面発光レーザの製造方法 |
| US13/796,322 US8962356B2 (en) | 2012-03-23 | 2013-03-12 | Method of manufacturing photonic crystal and method of manufacturing surface-emitting laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012066716A JP5906108B2 (ja) | 2012-03-23 | 2012-03-23 | フォトニック結晶の製造方法及び面発光レーザの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013197574A JP2013197574A (ja) | 2013-09-30 |
| JP2013197574A5 true JP2013197574A5 (enExample) | 2015-05-07 |
| JP5906108B2 JP5906108B2 (ja) | 2016-04-20 |
Family
ID=49212201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012066716A Expired - Fee Related JP5906108B2 (ja) | 2012-03-23 | 2012-03-23 | フォトニック結晶の製造方法及び面発光レーザの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8962356B2 (enExample) |
| JP (1) | JP5906108B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201504599A (zh) * | 2013-05-30 | 2015-02-01 | Univ California | 具有高對比光柵及可作爲雙重用途之高對比光柵垂直腔表面發射雷射檢測器之二維週期結構的極化無關光檢測器 |
| JP6271967B2 (ja) * | 2013-11-23 | 2018-01-31 | キヤノン株式会社 | 波長可変光源 |
| US9502863B2 (en) * | 2014-08-26 | 2016-11-22 | Fuji Xerox Co., Ltd. | Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device |
| CN105551939B (zh) * | 2015-12-29 | 2018-02-13 | 北京大学 | 自组装制备带空腔的iii‑v族氮化物复合衬底的方法 |
| CN114496771B (zh) * | 2020-11-11 | 2024-05-03 | 长鑫存储技术有限公司 | 半导体结构的制造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3589200B2 (ja) | 2000-06-19 | 2004-11-17 | 日亜化学工業株式会社 | 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子 |
| US6627974B2 (en) | 2000-06-19 | 2003-09-30 | Nichia Corporation | Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
| US7483466B2 (en) * | 2005-04-28 | 2009-01-27 | Canon Kabushiki Kaisha | Vertical cavity surface emitting laser device |
| JP4933193B2 (ja) * | 2005-08-11 | 2012-05-16 | キヤノン株式会社 | 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法 |
| JP5602475B2 (ja) * | 2010-03-31 | 2014-10-08 | Ｈｏｙａ株式会社 | レジストパターンの形成方法及びモールドの製造方法 |
| US20120217474A1 (en) * | 2011-02-25 | 2012-08-30 | Agency For Science, Technology And Research | Photonic device and method of making the same |
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2012
- 2012-03-23 JP JP2012066716A patent/JP5906108B2/ja not_active Expired - Fee Related
-
2013
- 2013-03-12 US US13/796,322 patent/US8962356B2/en not_active Expired - Fee Related