JP2013173623A - 金属担持炭素材料およびその製造方法 - Google Patents
金属担持炭素材料およびその製造方法 Download PDFInfo
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- JP2013173623A JP2013173623A JP2012034583A JP2012034583A JP2013173623A JP 2013173623 A JP2013173623 A JP 2013173623A JP 2012034583 A JP2012034583 A JP 2012034583A JP 2012034583 A JP2012034583 A JP 2012034583A JP 2013173623 A JP2013173623 A JP 2013173623A
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- metal
- carbon material
- hydrogen
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- carbon
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- 239000001257 hydrogen Substances 0.000 claims abstract description 178
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 178
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 63
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- 125000001424 substituent group Chemical group 0.000 description 4
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 description 3
- 239000004912 1,5-cyclooctadiene Substances 0.000 description 3
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- XGRJZXREYAXTGV-UHFFFAOYSA-N chlorodiphenylphosphine Chemical compound C=1C=CC=CC=1P(Cl)C1=CC=CC=C1 XGRJZXREYAXTGV-UHFFFAOYSA-N 0.000 description 3
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Abstract
【解決手段】細孔を有する炭素材料に金属粒子が担持されてなる金属担持炭素材料であって、担持される金属粒子の平均粒径が3nm以下であり、担持される金属粒子の50%以上の粒径が1nm以下である、金属担持炭素材料である。
【選択図】なし
Description
本発明の一実施形態は、細孔を有する炭素材料に金属粒子が担持されてなる金属担持炭素材料であって、担持される金属粒子の平均粒径が3nm以下であり、担持される金属粒子の50%以上の粒径が1nm以下である、金属担持炭素材料である。
本実施形態による金属担持炭素材料は、細孔を有する炭素材料を準備する段階と、前記炭素材料に金属錯体を導入する段階と、前記金属錯体を導入した炭素材料を熱処理するか、または水素と接触させることによって金属錯体を還元し、金属粒子が担持された金属担持炭素材料を得る段階と、を有する方法によって製造することができる。
原料となる炭素材料(炭素材料前駆体)の入手経路については特に制限はない。商業的に入手可能な商品を用いてもよいし、自ら調製してもよい。以下、ゼオライト鋳型カーボンなどのミクロポーラス炭素材料を用いる場合を説明する。
炭素材料に金属錯体を導入する方法も特に制限されない。例えば(1)炭素材料をリン化合物と反応させてリン配位子を有する炭素材料を得る段階と、前記リン配位子を有する炭素材料を金属化合物と反応させて、前記リン配位子に金属を配位させる段階と、を含む方法;または、(2)炭素材料と金属錯体とを反応させる方法;が挙げられる。
この方法では、はじめに炭素材料にリン配位子を導入し、次いでリン配位子に触媒となる金属を含む金属錯体を導入して反応させる。この反応は、金属錯体の配位子が配位力の強いリン配位子と置き換わる配位子交換反応によって進行しうる。その結果、金属原子にリン配位子が配位した錯体として担持させることができる。
この方法では、金属錯体を直接炭素材料に導入して反応させる。導入する金属錯体の配位子の配位力によっては、導入する金属錯体の配位子の一以上が脱離したり、溶媒分子と置換されうる。
式中、R1、R2はそれぞれ独立して水素原子、置換もしくは非置換の炭素数1〜10のアルキル基、または置換もしくは非置換の炭素数6〜18のアリール基であり、
L1およびL2は単座配位子であり、それぞれ独立して、アセトニトリル、ベンゾニトリル、THF、ジエチルスルフィド、ジメチルスルフィド、およびピリジンからなる群から選択される;または、
L1およびL2は連結して二座配位子を形成し、前記二座配位子は、ジシクロペンタジエン、1,5−シクロオクタジエン、ノルボナジエン、2,2’−ビピリジン、1,10−フェナントロリン、エチレンジアミン、N,N,N’N’−テトラメチルエチレンジアミン、およびtrans,trans−ジベンジリデンアセトンからなる群から選択される。
上記の段階で作製した金属錯体を導入した炭素材料を熱処理するか、または水素に接触させることで、金属錯体が還元され、0価の金属となる。そして、この0価の金属が凝集して平均粒径が3nm以下であり、1nm以下の粒子が全粒子数の50%以上である金属粒子(金属クラスター)となる。本実施形態の方法によれば、はじめに金属を錯体として導入するため、金属粒子を高分散で担持させることができる。また、還元剤を用いて金属粒子を得る方法と比較して穏やかに反応が進行しうるため、所定の粒径を有し、粒径がそろった金属粒子を有する金属担持炭素材料が得られうる。
本実施形態による金属担持炭素材料は、高い水素吸蔵能を有し、100℃以下の温度で水素の吸蔵、放出が可能である。また、水素の吸蔵、放出に化学反応を伴わないため、耐久性に優れる。そのため、特に燃料電池自動車用の水素吸蔵材料に好適に用いられうる。
本実施形態による金属担持炭素材料は、金属を高活性な状態で担持できる。また、数原子〜数十原子程度の金属クラスターとすることで金属の使用量を低減できる。そのため、触媒金属の質量当たりの活性が向上した触媒材料が得られうる。本実施形態による金属担持炭素材料は、例えば燃料電池用電極触媒などの各種触媒に好適に用いられうる。
乾燥したゼオライト(NaY5.5)にフルフリルアルコール(FA)を含浸した。これを、150℃で8時間熱処理してFAを重合させ、PFA/ゼオライト複合体とした。これをN2雰囲気下5℃/minで850℃まで昇温し、次いで700℃で1時間プロピレンCVDを行った。その後N2雰囲気下5℃/minで900℃まで昇温して3時間保持し、炭素/ゼオライト複合体を調製した。最後に、この複合体を47wt%のフッ素水素酸100mlに投入後、5時間攪拌してフッ化水素酸処理し、鋳型であるゼオライトを溶解除去してミクロポーラス炭素材料(MPC)であるZTCを得た。
(実施例1:ZTC−Ptの調製)
参考例1で調製したZTCについて、アセトニトリル中で(1,5−シクロオクタジエン)ジメチル白金(II)と反応させ、下記式のようなPt錯体を導入した炭素材料を得た。
参考例1で調製したZTCについて、ジフェニルホスフィン配位子を導入し、その後ジフェニルホスフィン配位子を導入したZTCをアセトニトリル中で(1,5−シクロオクタジエン)ジメチル白金(II)と反応させ、下記式のようなPt錯体を導入した炭素材料を得た。
下記反応式(1)、(2)にしたがってエッジ修飾ミクロポーラス炭素材料を調製した。
錯体を担持させたZTCと比較するため、一般的な方法を用いてZTCにPtナノ粒子を担持させた。ジアンミンジニトロ白金[Pt(NO2)2(NH3)2]の0.096wt%水溶液6.7mlと、還元剤水溶液である水素化ホウ素ナトリウムの0.0095wt%の水溶液66.7mlとをそれぞれ調製し、0℃に冷却した。続いて、参考例1で調製したZTC100mgを0℃のジアンミンジニトロ白金水溶液に投入し、0℃に冷却して減圧雰囲気で30分間撹拌した。次に、この溶液を遠心分離して0℃の水素化ホウ素ナトリウム水溶液と混合し、0℃で10分間撹拌することによりジアンミンジニトロ白金を還元して白金ナノ粒子を生成させた。反応溶液を0.1μmのメンブレンフィルター(ADVANTEC社製H010A047A、φ=47mm)を用いて濾過し、試料をイオン交換水でよく洗浄した後、150℃で6時間減圧乾燥した。この試料をZTC−Pt粒子と表す。試料中に白金は2.28wt%であった。BET表面積は3260g/m2であった。この試料をZTC−Pt粒子と表す。
各実施例で調製した金属錯体を導入した炭素材料について熱処理を行った。試料を、200℃または300℃で1時間の真空加熱処理を行った。真空加熱処理は、日本ベル株式会社製吸着測定用前処理装置Belprepを用いて行った。熱処理前に100℃(1時間で昇温)で6時間の真空加熱乾燥を行い、それから10℃/分で所定の温度に昇温して1時間の真空加熱処理を行った。
各実施例で調製した金属錯体を導入した炭素材料について25℃、50℃、70℃の順に各温度で30分間水素処理を行った。
進むことが確認された。
(1)室温にてヘリウム雰囲気下でXAFS測定、
(2)室温にて水素をフローさせて水素処理を30分間行った後、再度ヘリウム雰囲気に戻してXAFS測定、
(3)ヘリウム雰囲気で所定温度まで昇温し、所定温度に達してから水素をフローさせて水素処理を30分間行い、ヘリウム雰囲気に戻して室温まで放冷してからXAFS測定を行った。温度は50℃、70℃、100℃の順で各温度で水素処理をした後にヘリウム雰囲気で室温まで放冷してからXAFS測定を行った。
1a、2a ミクロ孔(ミクロ細孔)、
2 ゼオライト炭素(ゼオライト鋳型カーボン)、
3 複合体。
Claims (7)
- 細孔を有する炭素材料に金属粒子が担持されてなる金属担持炭素材料であって、担持される金属粒子の平均粒径が3nm以下であり、担持される金属粒子の50%以上の粒径が1nm以下である、金属担持炭素材料。
- 前記金属粒子は、XAFSから求められる金属原子の平均配位数が5.5以下であり、平均粒径が1.2nm以下である、請求項1に記載の金属担持炭素材料。
- 前記炭素材料が、ゼオライト鋳型カーボン(ZTC)である、請求項1または2に記載の金属担持炭素材料。
- 前記金属粒子が、8〜10族の金属から選択される1以上の金属を含む、請求項1〜3のいずれか1項に記載の金属担持炭素材料。
- 細孔を有する炭素材料を準備する段階と、
前記炭素材料に金属錯体を導入する段階と、
前記金属錯体を導入した炭素材料を熱処理するか、または水素と接触させることによって金属錯体を還元し、金属粒子が担持された金属担持炭素材料を得る段階と、を有する、請求項1〜4のいずれか1項に記載の金属担持炭素材料の製造方法。 - 請求項1〜4のいずれか1項に記載の金属担持炭素材料を含む、水素吸蔵材料。
- 請求項1〜4のいずれか1項に記載の金属担持炭素材料を含む、触媒。
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