JP2013168497A - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- JP2013168497A JP2013168497A JP2012030690A JP2012030690A JP2013168497A JP 2013168497 A JP2013168497 A JP 2013168497A JP 2012030690 A JP2012030690 A JP 2012030690A JP 2012030690 A JP2012030690 A JP 2012030690A JP 2013168497 A JP2013168497 A JP 2013168497A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 81
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000001301 oxygen Substances 0.000 claims abstract description 110
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 9
- 229910010038 TiAl Inorganic materials 0.000 claims abstract description 8
- 238000009826 distribution Methods 0.000 claims description 13
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 29
- 239000010410 layer Substances 0.000 description 126
- 238000001312 dry etching Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 238000005513 bias potential Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- General Physics & Mathematics (AREA)
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- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】このGaN系HFETは、Si基板10上に形成されたアンドープGaN層1,アンドープAlGaN層2による窒化物半導体積層体20に凹部106,109が形成され、この凹部106,109にオーミック電極(ソース電極11,ドレイン電極12)が形成されている。このTiAl系材料からなるオーミック電極とGaN層1との界面S1よりも深い領域において、界面近傍の第1の酸素濃度ピークと、第1の酸素濃度ピークよりも深い位置に酸素濃度が3×1017cm−3〜1.2×1018cm−3以下の第2の酸素濃度ピークを有する。
【選択図】図1
Description
基板と、
上記基板上に形成されていると共にヘテロ界面を有する窒化物半導体積層体と、
上記窒化物半導体積層体上または上記窒化物半導体積層体内に少なくとも一部が形成されたTiAl系材料からなるオーミック電極と
を備え、
上記窒化物半導体積層体は、
上記基板上に形成された第1の窒化物半導体層と、
上記第1の窒化物半導体層上に形成されていると共に上記第1の窒化物半導体層とヘテロ界面を形成する第2の窒化物半導体層と
を有し、
上記TiAl系材料からなるオーミック電極から上記窒化物半導体積層体に亘る深さ方向の酸素濃度分布において、
上記オーミック電極と上記窒化物半導体積層体との界面よりも上記基板側の領域の上記界面近傍の位置に第1の酸素濃度ピークを有し、
上記第1の酸素濃度ピークよりも深い位置に第2の酸素濃度ピークを有し、
上記第2の酸素濃度ピークの酸素濃度は、
3×1017cm−3以上かつ1.2×1018cm−3以下であることを特徴としている。
上記第2の窒化物半導体層を貫通して上記ヘテロ界面近傍の2次元電子ガス層に達する凹部を有し、
上記凹部に上記オーミック電極の少なくとも一部が埋め込まれている。
2,102 AlGaN層
3,103 2DEG層
10 Si基板
11 ソース電極
12 ドレイン電極
13 ゲート電極
15 AlGaNバッファ層
20,120 窒化物半導体積層体
30,130 絶縁膜
40 層間絶縁膜
41 ビア
42 ドレイン電極パッド
106,109 凹部
111,112 オーミック電極
P1 第1の酸素濃度ピーク
P2 第2の酸素濃度ピーク
S1 界面
Claims (3)
- 基板と、
上記基板上に形成されていると共にヘテロ界面を有する窒化物半導体積層体と、
上記窒化物半導体積層体上または上記窒化物半導体積層体内に少なくとも一部が形成されたTiAl系材料からなるオーミック電極と
を備え、
上記窒化物半導体積層体は、
上記基板上に形成された第1の窒化物半導体層と、
上記第1の窒化物半導体層上に形成されていると共に上記第1の窒化物半導体層とヘテロ界面を形成する第2の窒化物半導体層と
を有し、
上記TiAl系材料からなるオーミック電極から上記窒化物半導体積層体に亘る深さ方向の酸素濃度分布において、
上記オーミック電極と上記窒化物半導体積層体との界面よりも上記基板側の領域の上記界面近傍の位置に第1の酸素濃度ピークを有し、
上記第1の酸素濃度ピークよりも深い位置に第2の酸素濃度ピークを有し、
上記第2の酸素濃度ピークの酸素濃度は、
3×1017cm−3以上かつ1.2×1018cm−3以下であることを特徴とする窒化物半導体装置。 - 請求項1に記載の窒化物半導体装置において、
上記第2の酸素濃度ピークの位置が、上記界面から65nm以上かつ110nm以下の深さであることを特徴とする窒化物半導体装置。 - 請求項1または2に記載の窒化物半導体装置において、
上記窒化物半導体積層体は、
上記第2の窒化物半導体層を貫通して上記ヘテロ界面近傍の2次元電子ガス層に達する凹部を有し、
上記凹部に上記オーミック電極の少なくとも一部が埋め込まれていることを特徴とする窒化物半導体装置。
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JP2012030690A JP5750382B2 (ja) | 2012-02-15 | 2012-02-15 | 窒化物半導体装置 |
US14/372,970 US9171947B2 (en) | 2012-02-15 | 2013-02-14 | Nitride semiconductor device |
CN201380009413.XA CN104115262B (zh) | 2012-02-15 | 2013-02-14 | 氮化物半导体器件 |
PCT/JP2013/053549 WO2013122154A1 (ja) | 2012-02-15 | 2013-02-14 | 窒化物半導体装置 |
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US9577048B1 (en) * | 2015-09-24 | 2017-02-21 | Epistar Corporation | Heterostructure field-effect transistor |
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JP2005260052A (ja) * | 2004-03-12 | 2005-09-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2010232503A (ja) * | 2009-03-27 | 2010-10-14 | Furukawa Electric Co Ltd:The | 半導体装置および半導体装置の製造方法 |
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US5818078A (en) * | 1994-08-29 | 1998-10-06 | Fujitsu Limited | Semiconductor device having a regrowth crystal region |
JP2967743B2 (ja) | 1997-01-14 | 1999-10-25 | 日本電気株式会社 | n型窒化ガリウム系半導体のコンタクト電極及びその形成方法 |
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CN104115262B (zh) | 2017-03-29 |
JP5750382B2 (ja) | 2015-07-22 |
CN104115262A (zh) | 2014-10-22 |
US9171947B2 (en) | 2015-10-27 |
WO2013122154A1 (ja) | 2013-08-22 |
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